Untitled
Abstract: No abstract text available
Text: Datasheet Standard LCD Segment Driver BU9797FUV-M MAX 144 Segments SEG36xCOM4 Features Integrated RAM for Display Data (DDRAM): 36 x 4 bit (Max 144 Segment) LCD Drive Output: 4 Common Output, Max 36 Segment Output Integrated Buffer AMP for LCD Driving
|
Original
|
BU9797FUV-M
SEG36Ã
144Segments
|
PDF
|
CEM8207
Abstract: No abstract text available
Text: CEM8207 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 5 20V, 6A, RDS ON = 20mΩ @VGS = 4.5V. RDS(ON) = 30mΩ @VGS = 2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired.
|
Original
|
CEM8207
CEM8207
|
PDF
|
CEM8207
Abstract: No abstract text available
Text: CEM8207 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 5 20V, 6A, RDS ON = 20mΩ @VGS = 4.5V. RDS(ON) = 30mΩ @VGS = 2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired.
|
Original
|
CEM8207
CEM8207
|
PDF
|
BFR94
Abstract: NF751 BFR94A Ferroxcube cross reference
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFR94A NPN 3.5 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 3.5 GHz wideband transistor DESCRIPTION BFR94A PINNING
|
Original
|
BFR94A
OT122E
MBB904
BFR94
NF751
BFR94A
Ferroxcube cross reference
|
PDF
|
BUK9MPP-55PRR
Abstract: MS-013 SO20 br 6500
Text: BUK9MPP-55PRR Dual TrenchPLUS logic level FET Rev. 01 — 14 May 2009 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode field-effect power transistor in SO20. Device is manufactured using NXP High-Performance HPA TrenchPLUS technology, featuring
|
Original
|
BUK9MPP-55PRR
BUK9MPP-55PRR
MS-013
SO20
br 6500
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BUK9MPP-55PRR Dual TrenchPLUS logic level FET Rev. 01 — 14 May 2009 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode field-effect power transistor in SO20. Device is manufactured using NXP High-Performance HPA TrenchPLUS technology, featuring
|
Original
|
BUK9MPP-55PRR
BUK9MPP-55PRR
|
PDF
|
DIN 32676
Abstract: CLASS 2500 VALVE PRESSURE CHART transistor sms asme transistor D 322 DIN 43650 form a P122D din 64 pin ribbon type c RG2 -relay valve B16-5-1988
Text: 8032 INLINE Flow Switch with On/Off indicator • DN 5/16“ to 2“ orifice • Local indicator • Adjustable switching contact transistor or relay • Adjustable hysterisis and delay time Type 8032 can be combined with. Type S030 Fitting Type 6013 Type 6213
|
Original
|
|
PDF
|
TRANSISTOR SMD MARKING CODE H11
Abstract: smd transistor marking a7h B1354 transistor p13 SAA7114E MHC611 H1245 MARKING CODE SMD ICo4 SAA7114H
Text: SAA7114 PAL/NTSC/SECAM video decoder with adaptive PAL/NTSC comb filter, VBI data slicer and high performance scaler Rev. 03 — 17 January 2006 Product data sheet 1. General description The SAA7114 is a video capture device for applications at the image port of Video
|
Original
|
SAA7114
SAA7114
11-Jun-2009
TRANSISTOR SMD MARKING CODE H11
smd transistor marking a7h
B1354
transistor p13
SAA7114E
MHC611
H1245
MARKING CODE SMD ICo4
SAA7114H
|
PDF
|
SAA7114
Abstract: SMD A7H YSCY12 AI23 LBGA156 LQFP100 SAA7114E SAA7114H ADH11
Text: SAA7114 PAL/NTSC/SECAM video decoder with adaptive PAL/NTSC comb filter, VBI data slicer and high performance scaler Rev. 03 — 17 January 2006 Product data sheet 1. General description The SAA7114 is a video capture device for applications at the image port of Video
|
Original
|
SAA7114
SAA7114
SMD A7H
YSCY12
AI23
LBGA156
LQFP100
SAA7114E
SAA7114H
ADH11
|
PDF
|
ICS872S33
Abstract: lmt6 ICS872S33CYLF
Text: ICS872S33 HITLESS SWITCH CLOCK GENERATOR W/HSTL FANOUT BUFFER GENERAL DESCRIPTION FEATURES The ICS872S33 is a PLL based clock generator, ICS clock redundancy circuit crc and 33 HSTL output HiPerClockS fanout buffer designed specifically for redundant
|
Original
|
ICS872S33
ICS872S33
89MHz
125GHz.
970MHz
25GHz.
199707558G
lmt6
ICS872S33CYLF
|
PDF
|
Untitled
Abstract: No abstract text available
Text: STU/D608S SamHop Microelectronics Corp. Feb. 06 2007 N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY VDSS ID RDS ON Super high dense cell design for low RDS(ON). ( m Ω ) Max Rugged and reliable. 55 @ VGS = 10V 60V TO-252 and TO-251 Package.
|
Original
|
STU/D608S
O-252
O-251
O-252AA
U/D608S
Tube/TO-252
O-252
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Green Product STU/D606S S a mHop Microelectronics C orp. Ver 1.1 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for low R DS ON . PRODUCT SUMMARY V DSS R DS(ON) (m Ω) Max ID Rugged and reliable. 60 @ VGS=10V
|
Original
|
STU/D606S
252AA(
O-252
O-252
|
PDF
|
TDA3541
Abstract: tda3510 TDA1047 tda2030 ic audio amplifier TDA1044 tda3530 TCA440 TCA660 BD876 7809A
Text: ELECTRONIC COMPONENTS DIGEST Integrated Circuits Discrete Semiconductors transistors thyristors diodes JSC C OMPE L Contents GLOSSARY . . . . . . . . . . . . . . . . . . . . . . . . 2 INTEGRATED CIRCUITS TV/Video ICs . . . . . . . . . . . . . . . . . . . . .
|
Original
|
TIP115
O-220
79L09AC,
SS9012D
TIP126
79L12AC,
SS9012E
TIP41C
TDA3541
tda3510
TDA1047
tda2030 ic audio amplifier
TDA1044
tda3530
TCA440
TCA660
BD876
7809A
|
PDF
|
BFR95
Abstract: 1 Fp 33 transistor bfr95 philips QDHS773 D2 144 transistor
Text: Product specification Philips Semiconductors r^ 3 3 -o s NPN 3.5 GHz wideband transistor DESCRIPTION 711062b QDHS773 H76 M P H I N SbE D PHILIPS INTERNATIONAL BFR95 PINNING NPN resistance-stabilized transistor in a SOT5 TO-39 metal envelope, with collector connected to the case.
|
OCR Scan
|
BFR95
711002b
QDHS773
MBB199
BFR95
1 Fp 33 transistor
bfr95 philips
D2 144 transistor
|
PDF
|
|
|
BFR94
Abstract: BFR94A
Text: Philips Sem iconductors bbS3^31 b7=5 • APX Product spe cifica tion NPN 3.5 GHz wideband transistor BFR94A N AMER PHILIPS/DISCRETE DESCRIPTION bTE ]> PINNING NPN resistance-stabilized transistor in a SOT122E capstan envelope. PIN 1 collector It features extremely low cross
|
OCR Scan
|
BFR94A
OT122E
BFR94A
BFR94.
Q031flfl3
BFR94
|
PDF
|
BFG34
Abstract: ON4497 TRANSISTOR 185 846 TRANSISTOR 726
Text: Philips Semiconductors Product specification -P .3 NPN 4 GHz wideband transistor PHILIPS INTERNATIONAL DESCRIPTION 3 - 0 S S ShE BFG34 TllDflEfci DDMSGSb T15 • PHIN PINNING NPN transistor in a four-lead dual-emitter plastic SOT103 envelope. It is designed for wideband
|
OCR Scan
|
BFG34
OT103
ON4497)
OT103.
BFG34
ON4497
TRANSISTOR 185 846
TRANSISTOR 726
|
PDF
|
BFG34
Abstract: 8723 transistor ON4497 UBS357 M883S
Text: P hilips Sem iconductors bb53^31 DD311b7 Ml? NPN 4 GHz wideband transistor ^ BFG34 N AflER PH ILIPS/DISCRETE DESCRIPTION b'iE » PINNING NPN transistor in a four-lead dual-emitter plastic S O U 03 envelope. It is designed for wideband application in CATV and MATV
|
OCR Scan
|
BFG34
OT103
ON4497)
BFG34
8723 transistor
ON4497
UBS357
M883S
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Philips Semiconductors b b 5 3 c]31 Q0311b7 417 • APX^£liSiJ£U SSSSi£!l NPN 4 GHz wideband transistor £ BFG34 N AflER PHILIPS/DISCRETE DESCRIPTION b^E » PINNING NPN transistor in a four-lead dual-emitter plastic SOU 03 envelope. It is designed for wideband
|
OCR Scan
|
Q0311b7
BFG34
MSB037
ON4497)
OT103.
CECC50
|
PDF
|
BFR95
Abstract: No abstract text available
Text: PJjjjjP^ejjiconductor^^^^ • bbS3T31 0031flflM ^72 gg^py^Productspecification NPN 3.5 GHz wideband transistor BFR95 N AMER PH ILIP S/ D IS C R ET E DESCRIPTION b*1E D PINNING NPN resistance-stabilized transistor in a SOT5 TO-39 metal envelope, with collector connected to the case.
|
OCR Scan
|
bbS3T31
0031flflM
BFR95
BFR95
|
PDF
|
BFR95
Abstract: transistor b 745 DD31
Text: Philips Semiconductors bbS3^31 0 0 3 ]iû fl4 R72 • ^ p x ^ P ro d u c ts p e c ific a tio n NPN 3.5 GHz wideband transistor BFR95 H AMER PHILIPS/DISCRETE DESCRIPTION blE D PINNING NPN resistance-stabilized transistor in a SOT5 TO-39 metal envelope, with collector connected to the case.
|
OCR Scan
|
BFR95
BFR95
transistor b 745
DD31
|
PDF
|
BFR94
Abstract: Ferroxcube cross reference BFQ34 Ferroxcube core BFR94A f2nd transistor 3305
Text: N AMER PHILIPS/DISCRETE 2SE D BFQ34 is recommended for new design • bbS3T31 DOlflOTS h U 11 BFR94 T -3 3 -0 S " N-P-N H.F. WIDEBAND TRANSISTOR N-P-N resistance-stabilized transistor in a SOT-48 capstan envelope featuring extremely low cross modulation, intermodulation and second harmonic distortion. Thanks to its high transition frequency
|
OCR Scan
|
bbS3T31
BFQ34
BFR94
T-33-Ã
OT-48
VCE-20V
BFR94
Ferroxcube cross reference
Ferroxcube core
BFR94A
f2nd
transistor 3305
|
PDF
|
L084A
Abstract: bl043 bl083 T6005A ed84 L064A
Text: AT6000/LV Series Features • • • • • • • • • • High Performance System Speeds > 100 MHz Flip-Flop Toggle Rates > 250 MHz 1.2 ns/1.5 ns Input Delay 3.0 ns/6.0 ns Output Delay Up to 204 User l/Os Thousands of Registers Cache Logic Design
|
OCR Scan
|
AT6000/LV
Configurabl208Q
L084A
bl043
bl083
T6005A
ed84
L064A
|
PDF
|
equivalent transistor UM 66
Abstract: BF 182 transistor transistor bf 244 AT-21400-G
Text: AT-21400 20 GHz NPN Silicon Bipolar Oscillator Transistor Whit H E W LETT fti'jZ fl PA CK A R D Chip Outline1 Features • • • • Fundamental Oscillation to > 20 GHz Low Phase Noise Compared to GaAs FETs High S21 Gain: 9.5 dB Typical at 4 GHz High MAG: 16.5 dB Typical at 4 GHz
|
OCR Scan
|
AT-21400
T-21400
meta-21
equivalent transistor UM 66
BF 182 transistor
transistor bf 244
AT-21400-G
|
PDF
|
BFR94
Abstract: BFR94A BS3C TRANSISTOR FQ BFR-94
Text: • ^ 53^31 0031070 ^7=5 IA PX , Product specification NPN 3.5 GHz wideband transistor BFR94A N AUER PHILIPS/DISCRETE DESCRIPTION bTE D PINNING NPN resistance-stabilized transistor in a SOT122E capstan envelope. PIN 1 collector It features extremely low cross
|
OCR Scan
|
BFR94A
OT122E
BFR94A
BFR94.
BFR94
BS3C
TRANSISTOR FQ
BFR-94
|
PDF
|
