2N3904

Abstract: 2N3906
Contextual Info: D Series D05SE60F 5 Volt Input Dc to Ac Inverter The D05SE60F is a generic dc to ac inverter designed to generate 6 mArms into a 350 - 550 volt load CCFL from a nominal 5 volt dc source. 1. -Vin 2. +Vin 3. Enable/PWM 4. ACout 5. ACreturn 6. N/C This view is from the top looking through pcb. It depicts layout for inverter to plug into.

2N3904

Abstract: 2N3906 2n3906 equivalent
Contextual Info: D Series D05SE50 5 Volt Input Dc to Ac Inverter The D05SE50 is a generic dc to ac inverter designed to generate 5 mArms into a 270 - 370 volt load CCFL from a nominal 5 volt dc source. 1. -Vin 2. +Vin 3. Enable/PWM 4. ACout 5. ACreturn 6. N/C This view is from the top looking through pcb. It depicts layout for inverter to plug into.

philips 4859

Contextual Info: Philips Semiconductors bbS3T31 D05SB11 D1S • APX N AMER PHILIPS/DISCRETE Product specification b?E D NPN 9 GHz wideband transistor FEATURES c BFR505 PINNING • High power gain PIN DESCRIPTION • Low noise figure Code: N30 • High transition frequency

AM27S03

Contextual Info: ADV MICRO {MEMORY} 0257528 0ES7S5ä D05SSti3 Q T|~ ADV M ICRO MEMORY 89D 25563 D ^ T -4 6 -2 3 -0 8 Am27S02/Am27S03 P 64-Bit Inverting-Output Bipolar RAM DISTINCTIVE CHARACTERISTICS • • • Fully decoded 16 word x 4-bit low-power Schottky RAMS Ultra-Fast Version: Address access time 15 ns

24v dc to ac inverter circuit

Abstract: 2N3904 2N3906 DC DC INPUT 24V OUTPUT 8V
Contextual Info: D Series D05SE60 5 Volt Input Dc to Ac Inverter The D05SE60 is a generic dc to ac inverter designed to generate 6 mArms into a 350 - 550 volt load CCFL from a nominal 5 volt dc source. 1. -Vin 2. +Vin 3. Enable/PWM 4. ACout 5. ACreturn 6. N/C This view is from the top looking through pcb. It depicts layout for inverter to plug into.

Contextual Info: üMnnM ^[]=ü January 29, 1998 D05 STUD HIGH CURRENT ISOLATED RECTIFIER ASSEMBLY TEL805-498-2111 FAX:805-498-3804 W E B :http://www.semtech.com HIGH CURRENT, HIGH DENSITY, ISOLATED, SILICON POWER RECTIFIER D05STUD • • • • • SET050203 SET050219 SET050212

Contextual Info: D05 STUD HIGH CURRENT ISOLATED RECTIFIER ASSEMBLY January 29, 1998 TEL805-498-2111 FAX:805-498-3804 W E B :http://www.semtech.com HIGH CURRENT, HIGH DENSITY, ISOLATED, SILICON POWER RECTIFIER D05STUD • • • • • SET050203 SET050219 SET050212 SET050204

Contextual Info: !» GEC P L E S S E Y S e p te m b e r 1995 PRELIMINARY INFORMATION SEMICONDUCTORS DS3112-2.0 P1480 LAN CAM 1kx64-BIT CMOS CONTENT-ADDRESSABLE MEMORY S u p e rs e d e s F e b ru a ry 1 9 9 2 ed itio n The P1480 LAN CAM is a 1K X 64-bit fixed-widlh CMOS Content-addressable Memory (CAM aimed at address

Contextual Info: For Im eiiaft M i m e , Coniaci Your Local Salesperson REF101 Precision VOLTAGE REFERENCE FEATURES APPLICATIONS • • • • • • PRECISION CALIBRATED VOLTAGE STANDARD +10.00V OUTPUT HIGH ACCURACY: ±0.005V VERY LOW DRIFT: 1ppm/°C max EXCELLENT STABILITY: 50ppm/1000hrs

ASTM d 454

Abstract: XFWB2256
Contextual Info: 1. Dimensions: 3. Electrical Specifications @25*C Turns Ratio: P ins< 20-1 : 4 - 5 ) : ( 6 - 7 ) :(1 0 -1 1) = 1:1 ¿3% X <-> o tû C\j O C¡ □o o D M O O Á H-Œ — Á , d o 0 .0 3 0 0.01 5 0 .0 5 0 OCL: 2 2 5 u H Min @ 100KHz 5 0 m V DO tsi .

d05s60c

Abstract: IDT05S60C JESD22
Contextual Info: IDT05S60C 2nd Generation thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark Product Summary V DC 600 V Qc 12 nC IF 5 A • No reverse recovery / No forward recovery • No temperature influence on the switching behavior

Contextual Info: Int0 rfi Qt ÌOfi QI provisional Data Sheet No. PD-9.338D I R Rectifier JANTX2N6766 HEXFET POWER MOSFET JANTXV2N6766 [REF:MIL-PRF-19500/543] [GENERIC.IRF250] N-CHANNEL 200 Volt, 0.085Q HEXFET HEXFET technology is the key to International Rectifier's advanced line of power MOSFET transistors.The effi­

Contextual Info: ADVANCE 8Mb: 512K x 18, 256K x 32/36 FLOW-THROUGH SYNCBURST SRAM MICRON* I TECHNOLOGY, INC. 8Mb SYNCBURST SRAM MT58L512L18F, MT58L256L32F, MT58L256L36F; MT58L512V18F, MT58L256V32F, MT58L256V36F 3.3V Supply, 3.3V or 2.5V I/O, Flow-Through FEATURES • • •

Contextual Info: MOS INTEGRATED CIRCUIT ¿¿PD4 2 S 1 6 1 6 5 L , 4 2 1 6 1 6 5 L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, HYPER PAGE MODE, BYTE READ/WRITE MODE D escription The ì ì PD42S16165L, 4216165Lare 1 048 576 w ords by 16 bits dynamic CMOS RAMs w ith optional hyper page

Philips FA 261

Contextual Info: Philips Semiconductors N bbS B IB l AMER 0 0 2 5 TtiT M A P X PH ILIP S /D IS C R E TE Product specification b?E D NPN 9 GHz wideband transistor FEATURES BFS505 PIN CONFIGURATION PINNING PIN DESCRIPTION • Low current consumption • High power gain •

Contextual Info: Preliminary la formation 20695D/0 - 14 A M D il AMD-K6 MMX Processor Data Sheet April 1997 Electrical Data 14.1 Operating Ranges The functional operation of the AMD-K6 MMX processor is guaranteed if the voltage and temperature parameters are within the limits defined in Table 44.

D05S120

Abstract: idh05s120 JESD22
Contextual Info: IDH05S120 thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery • Temperature independent switching behavior V DC 1200

G055175

Abstract: Z86C9320PEC HP30C DD2S173 86c91
Contextual Info: ZIL06 INC 4bE D • =^64043 DD2S173 S P r e l im in a r y P r o d u c t S p e c if ic a t io n T -W -H -u tb Z86C93 CMOS Z8 MULT/DlV MICROCONTROLLER FEATURES ■ Com plete m icrocontroller, 24 I/O lines, and up to 64 Kbytes of addressable external space each tor program

D05S60C

Contextual Info: IDT05S60C 2nd Generation thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark Product Summary V DC 600 V Qc 12 nC IF 5 A • No reverse recovery / No forward recovery • No temperature influence on the switching behavior

99C68-35

Contextual Info: ADV MICRO {MEMORY} D Ê | 025752Û OOESbOb H n Am99C68/Am99CL68 4096 x 4 CMOS Static R /W Random-Access Memory 0 2 5 7 5 2 8 ADV MICRO <MEMORY 89D 25606 D T-46-23-08 > 3 DISTINCTIVE CHARACTERISTICS - Standby: High speed — access times as fast as 35 ns Fully static storage and interface circuitry

74HCT688B1

Abstract: 74hct688m
Contextual Info: r r z SGS-THOMSON Ä T # [j* M Œ O T ë K i M54HCT688 M74HCT688 8 BIT EQUALITY COMPARATOR • HIGHSPEED tpo = 17 ns (TYP.) AT Vcc = 5 V ■ LOW POWER DISSIPATION Ice = 4 nA (MAX.) AT T a = 25 ’ C ■ COMPATIBLE WITH TTL OUTPUTS V ih = 2V (MIN.) V il = 0.8V (MAX)

internal diagram of ic 4017

Abstract: 4017 equivalent ic 4017 PIN DIAGRAM truth table of 4017 M74HC4017B1 truth table of IC 4017
Contextual Info: r Z Z SGS-THOMSON * 7 # « M iy iÛ ïlM M S M54HC4017 M74HC4017 DECADE COUNTER/DIVIDER HIGH SPEED tpD = 21 ns typ. AT Vcc = 5V LOW POWER DISSIPATION Icc = 4 |iA (MAX.) AT Ta = 25 °C HIGH NOISE IMMUNITY V nih = V nil = 28 % Vcc (MIN.) OUTPUT DRIVE CAPABILITY

du27

Abstract: AL3124 d04s DU32 1-23AL
Contextual Info: DENSE-PAC 1152 Megabit CMOS DRAM MI C R O S Y Ë T EM S DPD16MS72RW5 ADVANCED INFORMATION PIN-OUT DIAGRAM DESCRIPTION: The DPD16MS72RW5 is the 16 Meg x 72 Dynamic RAM module in the family of Super DIMM modules that utilize the new and innovative space saving TSOP

D05S60

Abstract: schottky 400v Q67040S4644 SDT05S60
Contextual Info: SDT05S60 thinQ!¥ SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 14 nC • No reverse recovery