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    D035 EQUIVALENT Search Results

    D035 EQUIVALENT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TMP89FS60AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP64-P-1010-0.50E Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP52-P-1010-0.65 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS60BFG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP64-1414-0.80-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63BUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP52-1010-0.65-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS62AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP44-P-1010-0.80A Visit Toshiba Electronic Devices & Storage Corporation

    D035 EQUIVALENT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BAT85 equivalent

    Abstract: db25m pinout 2N3906 Equivalent BC 2N3906 Motorola 2n3906 equivalent transistor cfr-25jb-4k7 Belden STP MC5207 transistor 2S D 716 Yageo zor datasheet
    Text: MIC384 Evaluation Board and DemoWare Software Micrel MIC384 Evaluation Board DemoWare Software • 3.3V, 100mA regulated power supply • Power supply leads or cables • SMBus™/I2C™ compatible serial bus host for communication with the MIC384 • Cable for serial host connection, as appropriate


    Original     		PDF MIC384 100mA MIC384 MIC384. MMBT3906 2N3906) BAT85 equivalent db25m pinout 2N3906 Equivalent BC 2N3906 Motorola 2n3906 equivalent transistor cfr-25jb-4k7 Belden STP MC5207 transistor 2S D 716 Yageo zor datasheet

    2N3906 MOTOROLA

    Abstract: MC5207 Yageo zor 2n3906 equivalent transistor datasheet connector DB25m db25m pinout 2N3906 Equivalent BC transistor 2S D 716 ZOR-25-B CFR-25JB-100R
    Text: MIC284 Evaluation Board and DemoWare Software Micrel MIC284 Evaluation Board DemoWare Software • 3.3V, 100mA regulated power supply • Power supply leads or cables • SMBus™/I2C™ compatible serial bus host for communication with the MIC284 • Cable for serial host connection, as appropriate


    Original     		PDF MIC284 100mA MIC284 MIC284. MMBT3906 2N3906) 2N3906 MOTOROLA MC5207 Yageo zor 2n3906 equivalent transistor datasheet connector DB25m db25m pinout 2N3906 Equivalent BC transistor 2S D 716 ZOR-25-B CFR-25JB-100R

    linear ptc thermistors 0805

    Abstract: PTC Thermistor thermistor ptc thermistors 0805 mil-prf-23648 RTH42 QTM12 23648 diodes in mil grade D035
    Text: PTC THERMISTORS DIRECTORY Catalog Page Description Part Series 22 EIA standard package Surface Mount Thermistor QT0805 1%, 2%, 5%, 10% M32192/2 Linear 7,000 ppm/°C temperature coefficient Board level temperature compensation 23 Wire bondable hybrid package


    Original     		PDF QT0805 M32192/2 QTC11 M32192/1 RTH42 MIL-PRF-23648/19 QTM12 RTH22 linear ptc thermistors 0805 PTC Thermistor thermistor ptc thermistors 0805 mil-prf-23648 RTH42 QTM12 23648 diodes in mil grade D035

    Untitled

    Abstract: No abstract text available
    Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 08 October 1999. INCH-POUND MIL-PRF-19500/127N 09 July 1999 SUPERSEDING MIL-S-19500/127M 14 March 1994 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICES, DIODE, SILICON, VOLTAGE REGULATOR,


    Original     		PDF MIL-PRF-19500/127N MIL-S-19500/127M 1N4370A-1 1N4372A-1, 1N746A-1 1N759A-1, 1N4370AUR-1 1N4372AUR-1 1N746AUR-1 1N759AUR-1,

    Untitled

    Abstract: No abstract text available
    Text: Zener Voltage Regulator Series 1N6321 thru 1N6349 Features • JAN, JANTX, JANTXV and JANS available per MIL-PRF-19500/533 • Voidless hermetically sealed glass package • Triple-layer passivation • Internal "Category I” Metallurgical bonds for 1N6320


    Original     		PDF 1N6321 1N6349 MIL-PRF-19500/533 1N6320 MIL-PRF-19500/533

    1N746A-1

    Abstract: 452 regulator JANHCB1N752
    Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 23 August 2006. INCH-POUND MIL-PRF-19500/127T 23 May 2006 SUPERSEDING MIL-PRF-19500/127R 19 August 2005 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICES, DIODE, SILICON, VOLTAGE REGULATOR,


    Original     		PDF MIL-PRF-19500/127T MIL-PRF-19500/127R 1N4370A-1 1N4372A-1 1N746A-1 1N759A-1, 1N4370AUR-1 1N4372AUR-1 1N746AUR-1 1N759AUR-1, 452 regulator JANHCB1N752

    mil-s-19500 qpl jantx1n5518b

    Abstract: 1N5521B JANTXV MIL-prf-19500/437 1N5518B-1 1N5518BUR-1 1N5518C-1 1N5518CUR-1 1N5518D-1 1N5518DUR-1 1N5546B-1
    Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 15 December 1997 INCH POUND MIL-PRF-19500/437D 15 September 1997 SUPERSEDING MIL-S-19500/437C 20 December 1994 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, LOW-NOISE VOLTAGE REGULATOR TYPES,


    Original     		PDF MIL-PRF-19500/437D MIL-S-19500/437C 1N5518B-1, 1N5518C-1, 1N5518D-1 1N5546B-1, 1N5546C-1, 1N5546D-1, 1N5518BUR-1, 1N5518CUR-1, mil-s-19500 qpl jantx1n5518b 1N5521B JANTXV MIL-prf-19500/437 1N5518B-1 1N5518BUR-1 1N5518C-1 1N5518CUR-1 1N5518DUR-1 1N5546B-1

    melf ZENER diode COLOR BAND

    Abstract: MIL-prf-19500/437 437H 1N5521B JANTXV 1N5531B JANTXV 1N5518B-1 1N5518BUR-1 1N5518C-1 fsc do-35 physical dimensions 1N5518D-1
    Text: INCH-POUND MIL-PRF-19500/437H 25 March 2008 SUPERSEDING MIL-PRF-19500/437G 12 July 2006 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, LOW-NOISE VOLTAGE REGULATOR, TYPES 1N5518B-1, 1N5518C-1, 1N5518D-1 THROUGH 1N5546B-1, 1N5546C-1, 1N5546D-1, 1N5518BUR-1,


    Original     		PDF MIL-PRF-19500/437H MIL-PRF-19500/437G 1N5518B-1, 1N5518C-1, 1N5518D-1 1N5546B-1, 1N5546C-1, 1N5546D-1, 1N5518BUR-1, 1N5518CUR-1, melf ZENER diode COLOR BAND MIL-prf-19500/437 437H 1N5521B JANTXV 1N5531B JANTXV 1N5518B-1 1N5518BUR-1 1N5518C-1 fsc do-35 physical dimensions

    SS321 equivalent

    Abstract: DIODE 1N9148 1N4307 1N4532 DIODE 1N3605 SE708 2N2222 chip 2N2369 transistor DZ800 MA1703
    Text: SILICON SIGNAL DIODES 100 MA TYPES Continued U @ 25°C BV @ 100//A Part Number (V) (nA) MA1703 40 50 MA1704 25 Vf Max. Max. @ Vr(V) 30 20 100 Co @ OV @ lF(mA) (V) 1.00 1.00 (pif) (nsec) Package Type trr Package Outline No. Specification Sheet No. 50 2 4


    OCR Scan     		PDF MA1703 MA1704 SS321 SS322 SS324 SS325 SS334 SS337 SE708 DZ800 SS321 equivalent DIODE 1N9148 1N4307 1N4532 DIODE 1N3605 2N2222 chip 2N2369 transistor

    JANTX 1N916

    Abstract: diode 1n4446 DA-Series 1n4148 D035 1N4532 1N916 JANTX general electric 1n4727 1N4148.1N4448 1N4148 1N4151
    Text: SILICON SIGNAL DIODES 100 MA TYPES P a rt N u m b e r BV @ 100/1A M in . V I r @ 2 5 ° C M a x. (ri A ) @ V r (V) V f (V ) M a x. @ I f (m A ) Co @ DV (pf) 1N914 100 25 30 1.00 10 4 1N 914A 100 25 20 1.00 20 4 1N914B 100 25 20 1.00 100 1N916 100 25 20


    OCR Scan     		PDF 100/1A 1N914 1N914A 1N914B 1N916 1N916A 1N916B 1N4148* 1N4149 1N4151 JANTX 1N916 diode 1n4446 DA-Series 1n4148 D035 1N4532 1N916 JANTX general electric 1n4727 1N4148.1N4448 1N4148

    in4447

    Abstract: IN4446 in4449 DIODe IN4446 1n914 equivalent IN4I48 in4448 IN4305 1N4148 1N4149
    Text: SILICON SIGNAL DIODES 100 MA TYPES Part N u m b e r BV @ 100/1A M in . V I r @ 2 5 ° C M ax. (ri A ) @ V r (V ) V f (V ) M ax. @ I f (m A ) Co @ DV (pf) 1N 914 100 25 30 1.00 10 4 1N 914A 100 25 20 1.00 20 4 1N 914B 100 25 20 1.00 100 1N 916 100 25 20


    OCR Scan     		PDF 100/1A 1N914 1N914A 1N914B 1N916 1N916A 1N916B 1N4148* 1N4149 1N4151 in4447 IN4446 in4449 DIODe IN4446 1n914 equivalent IN4I48 in4448 IN4305 1N4148

    DIODe IN4446

    Abstract: in4447 in4449 IN4I48 1n914 equivalent in4448 JANTX 1N916 1n916 equivalent IN4446 1N916 JANTX
    Text: SILICON SIGNAL DIODES 100 MA TYPES Part N u m b e r BV @ 100/1A M in . V I r @ 2 5 ° C M ax. (ri A ) @ V r (V ) V f (V ) M ax. @ I f (m A ) Co @ DV (pf) 1N 914 100 25 30 1.00 10 4 1N 914A 100 25 20 1.00 20 4 1N 914B 100 25 20 1.00 100 1N 916 100 25 20


    OCR Scan     		PDF 100/1A 1N914 1N914A 1N914B 1N916 1N916A 1N916B 1N4148* 1N4149 1N4151 DIODe IN4446 in4447 in4449 IN4I48 1n914 equivalent in4448 JANTX 1N916 1n916 equivalent IN4446 1N916 JANTX

    in4151

    Abstract: 1N4532 1N4148 1N4149 1N4151 1N4152 1N914 1N914A 1N914B 1N916
    Text: SILICON SIGNAL DIODES 100 MA TYPES Part Number 1N914 1N 914A 1N 914B BV @ 100/1A Min. V I r @ 2 5 °C Max. (ri A) @ V r (V ) V f Max. (V ) @ I f (m A ) Co @ DV (pf) trr (77S E C ) Package Outline Package Outline Number 100 100 25 30 1.00 10 4 25 20 1.00


    OCR Scan     		PDF 100/1A 1N914 1N914A 1N914B 1N916 1N916A 1N916B 1N4148* 1N4149 1N4151 in4151 1N4532 1N4148 1N4152

    in4606

    Abstract: IN4150 1N4606 1N4150 1N4450 1N4607 1N460B D035 DT230C DT230H
    Text: SIGNAL DIODES 100 - 200 M A TYPES 200 - 400 M A TYPES @ Part Number Ir BV 1OOü A Min. V 1N4451 40 1N4607 85 Vf @ 25°C Max. <nA) 1 Max. @ V r (V) (V) @ Ir(mA) Co @ OV (pf) trr Package T»pe (nsec) 50 30 1.00 300 6 10 100 50 1.00 400 4 10 1 Package Outline No.


    OCR Scan     		PDF 100/iA 1N4150* 1N4450 1N4606 100/tA 1N445I 1N4607 1N460B DT230C DT230H in4606 IN4150 1N4150 D035

    KF520

    Abstract: KT725 diac kr 206 KT707 KD502 kt201 KT206-200 KU607 KYS 30 40 diode KT784
    Text: TESLA ECIMEX, a. s. T E /1 \L /I Sem iconductor Discrete Devices Sem iconductor Discrete Devices CONTENTS . 3 TRANSISTORS. 5


    OCR Scan     		PDF 15Blatnà KF520 KT725 diac kr 206 KT707 KD502 kt201 KT206-200 KU607 KYS 30 40 diode KT784

    Untitled

    Abstract: No abstract text available
    Text: May 1990 FUJITSU PRODUCT PROFILE; MB85253-80/-10/-12 CMOS 256K X 40 FAST PAGE MODE DRAM MODULE The Fujitsu MB85253 is a fully decoded, CMOS dynamic random access memory DRAM module consisting of ten MB81C4256 devices. The MB85253 is optimized for those applications requiring high speed, high


    OCR Scan     		PDF MB85253-80/-10/-12 MB85253 MB81C4256 72-pad MSS-72P-P03

    AO2020

    Abstract: No abstract text available
    Text: DRAM MODULE 32 Mega Byte KMM5368000AH Fast Page Mode 8Mx36 DRAM SIMM , 4K Refresh , 5V Using 16M DRAM with 400 mil Package GENERAL DESCRIPTION FEATURES The Samsung KMM5360OOOAH is a 0M bit x 36 Dynamic RAM high density memory module. The Samsung KMM5368000AH consists of eighteen


    OCR Scan     		PDF KMM5368000AH 8Mx36 KMM5360OOOAH 24-pin 72-pin KMM5366000AH AO2020

    D032

    Abstract: No abstract text available
    Text: DENSE-PAC MICROSYSTEMS 640 Megabit C M O S D R A M DPD16MS40PKW5 PRELIMINARY D E S C R IP T IO N : The D PD 16M S40PKW 5 is the 16 Meg x 40 Dynamic R A M module in the family of S o p e rS / M M modules that utilize the new and innovative space saving TSOP


    OCR Scan     		PDF DPD16MS40PKW5 S40PKW 72-pin 100ns D032

    Untitled

    Abstract: No abstract text available
    Text: DENSE-PAC 1280 Megabit CMOS DRAM MICROSYSTEMS DPD32MS40PKW5 PRELIMINARY D ESCRIPTIO N : The DPD32MS40PKW5 is the 32 Meg x 40 Dynamic RAM module in the family of S u p e r S IM M modules that utilize the new and innovative space saving TSOP stacking technology. The module is constructed of twentyfour dynamic RAM stacks,


    OCR Scan     		PDF DPD32MS40PKW5 DPD32MS40PKW5 72-pin 100ns 3QA153-01 30A153

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS 4M x 36-Bit Dynamic RAM Module HYM 364020S/GS-60/-70 Advanced Inform ation • 4 194 304 words by 36-Bit organization alternative 8 388 608 w ords by 18-bit • Fast access and cycle tim e 60 ns access time 110 ns cycle tim e (-60 version) 70 ns access tim e


    OCR Scan     		PDF 36-Bit 364020S/GS-60/-70 18-bit) 364020S/GS-60/-70 36-Bit

    131-6 wj 71

    Abstract: 131-6 wj 66 131-6 wj 70 A0-A11I DQ91
    Text: DRAM MODULE 32 Mega Byte KMM5368003AK/AKG Fast Page Mode 8Mx36 DRAM SIMM, 4K Refresh, 5V Using 16M Quad CAS DRAM with 400 mil Package GENERAL DESCRIPTION FEATURES • Performance Range: The Sam sung KMM5368003AK is a 8M bit x 36 D ynam ic RAM high density m em ory m odule using


    OCR Scan     		PDF KMM5368003AK/AKG 8Mx36 KMM5368003AK 5368003AK 24-pin 28-pin 72-pin 131-6 wj 71 131-6 wj 66 131-6 wj 70 A0-A11I DQ91

    km416c1204aj

    Abstract: 9-14110 KMM5362205AWG
    Text: DRAM MODULE KMM5362205AW/AWG KMM5362205AW/AWG Fast Page with EDO Mode 2Mx36 DRAM SIMM, 5V, 1K Refresh using 4M Quad CAS EDO DRAM G EN ERA L D ESC RIPTIO N FEATURES The Samsung KMM5362205AW is a 2M bit x 36 Dynamic RAM high density memory module. The Samsung KMM5362205AW consists of four CMOS


    OCR Scan     		PDF KMM5362205AW/AWG KMM5362205AW/AWG 2Mx36 KMM5362205AW 1Mx16 42-pin 24-pin 72-pin km416c1204aj 9-14110 KMM5362205AWG

    KMM5361003C6

    Abstract: TAA 780 kmm5361003
    Text: DRAM MODULE / _ 4 Mega Byte KMM5361003C/CG Fast Page Mode / 1Mx36 Quad CAS DRAM SIMM Using Quad CAS DRAM, 5V G EN ERA L D ESCRIPTIO N FEATURES The Samsung KMM5361003C is a 1M bit x 36 Dynamic RAM high density memory mod' e using Parity with 4M Quad CAS DRAM. The Samsung


    OCR Scan     		PDF KMM5361003C/CG 1Mx36 KMM5361003C 20-pin 24-pin 72-pin KMM5361U03C KMM5361003C6 TAA 780 kmm5361003

    Q67100-Q645

    Abstract: 514400AJ 362120GS-60 362120 2m x 36 362120GS-80
    Text: SIEMENS 2M x 36-Bit Dynamic RAM Module HYM 362120GS-60/-70/-80 Advanced Inform ation • 2 097 152 words by 36-bit organization alternative 4 194 304 words by 18-bit • Fast access and cycle time 60 ns access time 110 ns cycle time (-60 version) 70 ns access time


    OCR Scan     		PDF 36-Bit 362120GS-60/-70/-80 18-bit) sub70/-80 36-Bit 362120GS-60/-70/-80 Q67100-Q645 514400AJ 362120GS-60 362120 2m x 36 362120GS-80