D02S
Abstract: CRT1B-ID02S 24 VDC power supply omron
Text: Bit Slave Units with e-CON Connectors CRT1B-@D02S -1 Simple and Intelligent Bit Slaves with Industry-standard e-CON connectors. Slave Units capable of 2-point bit-level distribution. The I/O power supply is supplied from the communications power in the previously connected flat cable, and has a
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CRT1B-ID02S
CRT1B-ID02S-1
D02S
CRT1B-ID02S
24 VDC power supply
omron
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2BMSI
Abstract: LT8291 3polig
Text: Gekapselte Motorschalter Motor switches in enclosure Motor switches Motorschalter 108 - 113 Dimensions Maßzeichnungen 114 - 120 Technical tables Technisch Tabellen 121 - 122 107 Motorschalter T-Reihe Motor switches T series Ein-Ausschalter, 3-polig On-off switches, 3 poles
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LG44/3
LT38/2
LG48/2
LT53/2
LG11/8
LG10/2
kW/400
532/6h
516/6h,
2BMSI
LT8291
3polig
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d02s60c
Abstract: idv02s60c d02s60 JESD22 d02s6
Text: IDV02S60C 2nd Generation thinQ!TM SiC Schottky Diode Fully isolated package with similar Rth,jc as the standard T0220 by using proprietary die attach processing Features Product Summary • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark
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IDV02S60C
T0220
PG-TO220-2
d02s60c
idv02s60c
d02s60
JESD22
d02s6
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BYT230PIV600
Abstract: BYT230PI-600 BYT230PIV-600 D8403 M3054 BYT230PIV IEC134 sot-227a definition RMS forward current SOT227A
Text: 2 SE D • BYT230PIV600 to 800 bbS3T31 D02S5D1 a ■ N AMER PHILIPS/DISCRETE 7=0 3 - 1*1 ULTRA FAST-RECOVERY DOUBLE RECTIFIER DIODES Glass-passivated, high-efficiency epitaxial rectifier diodes in ISOTOP envelopes, featuring low forward voltage drop, ultra fast reverse recovery times, very iow stored charge and soft-recovery characterisitc.
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bbS3T31
D02S5D1
BYT230PIV-
BYT230PIV600
BYT230PI-600
BYT230PIV-600
D8403
M3054
BYT230PIV
IEC134
sot-227a
definition RMS forward current
SOT227A
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Untitled
Abstract: No abstract text available
Text: 37E D 430SE71 HARRIS D02S17D SEMICOND G B HAS^igh-Reliabmiy High-Speed C M O S Logic ICs SECTOR CD54HC373/3A CD54HCT373/3A Octal Transparent Latch, 3-State ‘¡P&-G7-/I . T he R C A CD 54H C373 and CD 54 H C T 3 7 3 are high speed Octal Transparent Latches m anufactured with silico n gate
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430SE71
D02S17D
CD54HC373/3A
CD54HCT373/3A
54LS373.
coD54HCT374/3A
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BSP109
Abstract: BSP103 BSP105 marking 5.il N-channel 2.5V sot223
Text: Philips Semiconductors Data sheet status Product specification date of issue April 1991 • D02SMfl2 137 H A P X B S P 103 /B S P 105 / B S P 109 N-channel enhancement mode vertical D-MOS transistors N AMER L.7E D QUICK REFERENCE DATA FEATURES • Direct interface to C-MOS, TTL,
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D02SMfl2
BSP103/BSP105/BSP109
OT223
OT223
BSP103:
BSP103
BSP105:
BSP109:
BSP109
BSP103
BSP109
BSP105
marking 5.il
N-channel 2.5V sot223
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bfr106
Abstract: No abstract text available
Text: • D02S20D 23T « a p x Philips S e m i c o n d u c t o r s _ Product specification AMER PHILIPS/ DIS CRETE b?E NPN 5 GHz wideband transistor DESCRIPTION c BFR106 PINNING NPN silicon planar epitaxial transistor In a plastic SOT23
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D02S20D
BFR106
bfr106
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M7707
Abstract: rd201 PLD-10 imv D6-11 BV 726 C 1 Converter w5753 fd187 sGCT function PR 161A RD202
Text: O K I Semiconductor MSM7707 Baseband integration LSI device for PHS GENERAL DESCRIPTION The MSM7707 is an LSI device with an ADPCM CODEC function, jt/4 shift QPSK modulation/ demodulation function and a TDMA-TDD function required for PHS Personal Handy phone
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MSM7707
MSM7707
32kbps)
Hz/12
b724240
0D257
TQFP100-P-1414-0
M7707
rd201
PLD-10
imv D6-11
BV 726 C 1 Converter
w5753
fd187
sGCT function
PR 161A
RD202
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Untitled
Abstract: No abstract text available
Text: TC7W02FU- - - - - - - - - - - - - - - - TC7W02FU Unit in mm DU A L 2-INPUT NO R GATE The TC7W02FU is a high speed C2MOS 2-INPUT NOR GATE fabricated with silicon gate C2MOS technology. It achives the high speed operation similar to equivalent LSTTL while maintaining the C2MOS low power dissipation.
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TC7W02FU-
TC7W02FU)
TC7W02FU
D02S2bl
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ADC7802
Abstract: No abstract text available
Text: For I m e M e M i m e , M a d M Local Salesperson Autocalibrating, 4-Channel, 12-Bit ANALOG-TO-DIGITAL CONVERTER FEATURES DESCRIPTION • LOW POWER: 10mW plus Power Down • SIGNAL-TO- NOISE + DISTORTION RATIO OVER TEMPERATURE: 69dB min with fM = 1kHz 66dB min with fM = 50kHz
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12-Bit
50kHz
117kHz
ADS7803
12-bit
50kHz.
17313b5
G022334
ADC7802
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Untitled
Abstract: No abstract text available
Text: Or, Call Customer S e m e at 1-S00-548-6132 USA Only • PROCESS CONTROL • INTERNAL SENSE RESISTORS • INDUSTRIAL CONTROL • PRECISION 10V REFERENCE • FACTORY AUTOMATION • BUILT-IN LEVEL-SHIFTING • DATA ACQUISITION • ±40V COMMON-MODE INPUT RANGE
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1-S00-548-6132
RCV420
4-20m
AB-014
4-20mA
0-20mA/0-5V
RCV420.
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toshiba S-AU
Abstract: TC5165805
Text: TO SHIBA THM73V1635ATG-4f-5 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 72-BIT DYNAMIC RAM MODULE DESCRIPTION The TH M 73V1635ATG is a 16,777,216-word by 72-bit dynam ic R A M module consisting of 18 T C 5164405A F T D R A M s on a printed circu it board. This module is optimized for applications w hich
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216-WORD
72-BIT
THM73V1635ATG-4f-5
73V1635ATG
164405A
toshiba S-AU
TC5165805
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET D S 0 4 - 1 3 5 1 22 - 11 E E Linearte converter CM O S D/A Converter for Digital Tuning 8-Channel, 8-bit, on-chip OP amp, low-voltage _ MB88347L • DESCRIPTION The MB88347L incorporates eight 8-bit D/A converter modules. This device operates at low supply voltage in
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MB88347L
MB88347L
MB88347
MB883±
F16015S-2C-4
374T7SL.
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Untitled
Abstract: No abstract text available
Text: FUJITSU S EM ICO NDUCTO R DATA SHEET ASSP Communication Control Data Link Controller DLC MB89374 • DESCRIPTION The MB89374 Data Link Controller (DLC) controls transfer of serial data in accordance with Bit Oriented Protocol (BOP). It supports protocols such as High level Data Link Control (HDLC) (the BOP mode) and Serial Data
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MB89374
MB89374
cMB89374
MB89374P-SH
42-pin
DIP-42P-M02)
MB89374PFQ
48-pin
FPT-48P-M13)
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Untitled
Abstract: No abstract text available
Text: 1 PRELIMINARY M IC R O N • 8 MEG X StMlCOMCUCTOR. INC MT16D832 32,16 MEG x 16 DRAM MODULE 8 MEG x 32,16 MEG X16 DRAM MODULE FAST PAGE MODE FEATURES OPTIONS MARKING • Timing 60ns access 70ns access -6 -7 Packages Leadless 72-pin SIMM Leadless 7 2 -pin SIMM gold
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MT16D832
72-pin
MT16D832G-6
MT16D832is
T160832
Ot994.
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Untitled
Abstract: No abstract text available
Text: International IOR Rectifier Provisional Data Sheet No. PD-9.720B REPETITIV E AVALANCHE AND d v /d t RATED IRHN7150 IRHN8150 HEXFET TRANSISTOR N -CH A N N EL M EGA RAD HARD 100 Volt, 0.0550, MEGA RAD HARD HEXFET International Rectifier’s MEGA RAO HARD technology
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IRHN7150
IRHN8150
Q0B5004
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950B
Abstract: No abstract text available
Text: A T & T MELEC CMPNT/ PWR 25E D AT&T Preliminary Data Sheet T -5 7 -1 1 950-Series Power Modules; 48 Vdc Input Features • High efficiency: r) = 85%, typ. (950A) Ti = 88%, typ. (950B) ■ Parallel operation with load sharing ■ Low profile: 0.6 in. ■ Complete input and output filtering
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T-57-11
950-Series
005002b
950B
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Untitled
Abstract: No abstract text available
Text: KS9282B CMOS INTEGRATED CIRCUIT DSP+DAC 16BIT FOR CDP The KS9282B is a CMOS integrated circuit designed for the Digital Audio Signal processor of the CDP (Compact Disc Player) application. It is a Monolithic IC that builts-in 16-Bit Digital to Analog Converter to add to the conventional DSP function.
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KS9282B
16BIT)
KS9282B
16-Bit
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MARKING SA transistor
Abstract: marking code ER transistor KST1623L6
Text: NPN EPITAXIAL SILICON TRANSISTOR KST1623L3/L4/L5/L6/L7 AMPLIFIER TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Rating Symbol Unit Collector-Base Voltage VcBO 50 V Collector-Emitter Voltage VcEO 40 V Emitter-Base Voltage V ebo 5 .0 V Collector Current
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KST1623L3/L4/L5/L6/L7
D02S10S
MARKING SA transistor
marking code ER transistor
KST1623L6
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Untitled
Abstract: No abstract text available
Text: KSP2907 PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISITOR • Collector-Emltter Voltage: V cto= 40V • Collector Dissipation: Pc m ax =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Symbol Rating Unit VcBO VcEO -6 0 -4 0 -5 -600 625
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KSP2907
625mW
DDES173
D02S3
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1NA111BP
Abstract: RG511 SOL16 package 2507 D02SD70 2N4117
Text: B U R R -B R O W N INA111 i High Speed FET-lnput INSTRUMENTATION AMPLIFIER FEATURES DESCRIPTION • FET INPUT: lB= 20pA max • HIGH SPEED: Ts = 4}is (G = 100, 0.01% • LOW OFFSET VOLTAGE: 500|iV max The IN A 111 is a high speed, FET-input instrumenta
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INA111
106dB
SOL-16
17313hS
0D2SD77
511Q//2
17313bS
00E507Ô
1NA111BP
RG511
SOL16 package
2507
D02SD70
2N4117
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equivalent transistor c 5888
Abstract: No abstract text available
Text: • Philips Semiconductors bbS3R31 0025318 350 H A P X N AUER PHILIPS/DISCRETE Product specification b7E NPN 9 GHz wideband transistor FEATURES BFS520 PINNING • High power gain PIN CONFIGURATION DESCRIPTION PIN • Low noise figure Code: N2 • High transition frequency
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bbS3R31
BFS520
OT323
OT323
OT323.
equivalent transistor c 5888
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Untitled
Abstract: No abstract text available
Text: N ANER PHILIPS/DISCRETE 25E D • bt.S3T31 QaaEbbT S ■ BYV118 SERIES , l 7 = V 0 3 -/7 SCHOTTKY-BARRIER DOUBLE RECTIFIER DIODES Low-leakage, platinum-barrier double rectifier diodes in plastic envelopes featuring low forward voltage drop, low capacitance and absence of stored charge. They are intended for use in switchedmode power supplies and high-frequency circuits in general, where both low conduction losses and
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S3T31
BYV118
0022b7b
53T31
0022b77
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LB 1639 1 L0
Abstract: Transistor MJE 5331 MT 7930 UBB301 transistor BF 697 bf 0252 MRC039 Philips FA 291 BFQ67W DDZ5068
Text: ok ,i . Philips Sem iconductors • bb53T31 D025DB4 36b « A P X AflER P H I L I P S / D I S C R E T E Product specification b?E D NPN 8 GHz wideband transistor FEATURES • BFQ67W PIN CONFIGURATION PINNING PIN High power gain DESCRIPTION • Low noise figure
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bb53T31
D025DB4
BFQ67W
OT323
MBCS70
OT323.
LB 1639 1 L0
Transistor MJE 5331
MT 7930
UBB301
transistor BF 697
bf 0252
MRC039
Philips FA 291
BFQ67W
DDZ5068
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