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    D 727 TRANSISTOR Search Results

    D 727 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CA3082 Rochester Electronics LLC CA3082 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    CA3081F Rochester Electronics LLC CA3081 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation

    D 727 TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    4 pin dual-emitter

    Abstract: dual-emitter BFQ741 UBC869 philips MATV amplifiers
    Text: Objective specification Philips Semiconductors y NPN 7 GHz wideband transistor PHILIPS INTERNATIONAL FEATURES 5L.E D ' 3 3 -0 5 BFQ741 WM 7110flEb OOMSbflO 727 • P H I N PINNING • Low distortion DESCRIPTION PIN • Gold metallization ensures excellent reliability


    OCR Scan     		33-Q5 BFQ741 7110AEb OT172 OT172A1 UBC869 OT172A1. 4 pin dual-emitter dual-emitter BFQ741 UBC869 philips MATV amplifiers PDF

    BFQ741

    Abstract: No abstract text available
    Text: Objective specification Philips Semiconductors ' '3 3 -Q5 NPN 7 GHz wideband transistor PH IL IP S I N T E R N A T I O N A L FEATURES 5L.E D • BFQ741 711GflEb ODMSbflO 727 ■ P H I N PINNING DESCRIPTION PIN • Low distortion • Gold metallization ensures


    OCR Scan     		BFQ741 7110A5b OT172 OT172A1 OT172A1. BFQ741 PDF

    D-621-EE

    Abstract: D-621-GE BROWN BOVERI brown Boveri diode D-621-EC D-621-GB BROWN BOVERI protection D-621-GC diode brown boveri 621GB
    Text: -FMC BBC BROWN BOVERI Silicon Power Rectifiers Fast switching B R O W N , B O V E R I & C IE A K T IE N G E S E L L S C H A F T M A N N H E IM G eschäftsbereich H albleiter und S trom rich te r Telefon 06206 503-1, T elex 0 4 -6 5 727 Postfach 200, D -6840 Lam pertheim


    OCR Scan     		D-6840 D-621 D-621-EE D-621-GE BROWN BOVERI brown Boveri diode D-621-EC D-621-GB BROWN BOVERI protection D-621-GC diode brown boveri 621GB PDF

    Boveri voltage regulator

    Abstract: brown Boveri diode DIODE BBC diode 628 bbc DIODE Transistor ge 718 DIODE BBC D BROWN BOVERI D-628-GC D-628-EB
    Text: -FMC BBC BROWN BOVERI Silicon Power Rectifiers Fast switching B R O W N , B O V E R I & C IE A K T IE N G E S E L L S C H A F T M A N N H E IM G eschäftsbereich H albleiter und S trom rich te r Telefon 0620(3 5 0 3-1 , T e le x 0 4 -6 5 727 Postfach 200, D -6840 Lam pertheim


    OCR Scan     		D-6840 D-628 Boveri voltage regulator brown Boveri diode DIODE BBC diode 628 bbc DIODE Transistor ge 718 DIODE BBC D BROWN BOVERI D-628-GC D-628-EB PDF

    ic 7465

    Abstract: HT3020B D 727 Transistor 7465 HT3020A HT3020C HT3020D Rhythm Percussion Generator CMOS drum generator
    Text: HT3020A/B/C/D One Rhythm Generator Features • • • • Operating Voltage: 2.4V~5.0V Directly drive an external transistor Low stand-by current One percussion instrument • • • One demo song End-pulse output 16 pin dual-in-line package • Sound effect generators


    Original     		HT3020A/B/C/D HT3020A/B/C/D HT3020A HT3020B HT3020C HT3020D ic 7465 HT3020B D 727 Transistor 7465 HT3020A HT3020C HT3020D Rhythm Percussion Generator CMOS drum generator PDF

    bcw 94 b

    Abstract: BF-139 F 540 NS BSY54 BCW95B BSY55
    Text: CB 76 (CB 6} (CB 7) Silicon NPN transistors, general purpose (continued) Tamb= 25 °C Transistors N P N silicium , usage générai (suite) (mW) VCEO (V) h21 E VCER* h21E V c E X a min max F 139 Bc F 139 B<> F 139 B TO 18 TO 18 540 540 540 330 330 40 60 60


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: AVANTEK 20E INC D O avantek • • • • • 7 AT-64020 Up to 4 GHz Linear Power Silicon Bipolar Transistor Features • OOO bS Sb Avantek 200 mil BeO Package High Output Power: 28.0 dBm typical Pi dBat 2.0 GHz 27.0 dBm typical Pi dBat 4.0 GHz High Gain at 1 dB Compression:


    OCR Scan     		AT-64020 PDF

    CMOS drum generator

    Abstract: HT3020D 7465 holtek drum
    Text: HOLTEK r r HT3020A/B/C/D One Rhythm Generator Features • • • • Operating Voltage: 2.4V~5.0V Directly drive an external transistor Low stand-by current One percussion instrument • • • One demo song End-pulse output 16 pin dual-in-line package


    OCR Scan     		HT3020A/B/C/D HT3020A/B/C/D HT3020A 240Kn HT3020B HT3020C HT3020D HT3020A, CMOS drum generator HT3020D 7465 holtek drum PDF

    Untitled

    Abstract: No abstract text available
    Text: User’s Manual 16 R8C/34W Group, R8C/34X Group, R8C/34Y Group, R8C/34Z Group User’s Manual: Hardware RENESAS MCU R8C Family / R8C/3x Series All information contained in these materials, including products and product specifications, represents information on the product at the time of publication and is subject to change by


    Original     		R8C/34W R8C/34X R8C/34Y R8C/34Z o2-8175-9670 R01UH0063EJ0110 PDF

    AVANTEK transistor

    Abstract: lm 3907 Avantek UA-152
    Text: AVANTEK INC Q a v a 2QE D n t e • lm iU b OOQbMbQ 3 I AT-41400 Up to 6 GHz Low Noise Silicon Bipolar Transistor Chip k " P 3 .1 -Z I Avantek Chip Outline Features • • • Low Noise Figure: 1.6 dB typical at 2.0 GHz 3.0 dB typical at 4.0 GHz High Associated Gain: 14.5 dB typical at 2.0 GHz


    OCR Scan     		AT-41400 AVANTEK transistor lm 3907 Avantek UA-152 PDF

    AVANTEK transistor

    Abstract: No abstract text available
    Text: AVANTEK I NC 50E D • lm n b b 00Db447 AT-01600 Up to 4 GHz General Purpose Silicon Bipolar Transistor Chip T Features D I 1 ‘ . - 3 1 - 2 . 3 Avantek Chip Outline • 22.0 dBm typical Pi dB at 2.0 GHz • 10.5 dB typical Gi dB at 2.0 GHz • High Gain-Bandwidth Product: 8.0 GHz typical fr


    OCR Scan     		00Db447 AT-01600 92yim 310-371-8717or AVANTEK transistor PDF

    E5EF

    Abstract: 8-L24 8L20 5H24 4e86
    Text:                                                        


    Original     		S3C80F7/C80F9/C80G7/C80G9 32-pin 42-pin 44pin E5EF 8-L24 8L20 5H24 4e86 PDF

    bc 7-25 pnp

    Abstract: transistor bc 7-25 2N5245 transistor 2n3819 cross reference TO-266AA 2N3904 731 jFET Array BFR30 "cross reference" 2N5308 cross reference 266AA
    Text: DISCRETE SEMICONDUCTORS IN D EX AND CROSS REFERENCE Industry Number 1N914 1N4148 1N4150 1N5229 1N5230 Type Diode Diode Diode Zener Zener Pinning 2 3 A A A A A NC NC NC NC K K K K NC K 7-29 7-29 7-29 7-30 7-30 A A A A A NC NC NC NC NC K K K K K 7-30 7-30 7-30


    OCR Scan     		1N914 1N4148 1N4150 1N5229 1N5230 1N5231 1N5232 1N5233 1N5234 1N5235 bc 7-25 pnp transistor bc 7-25 2N5245 transistor 2n3819 cross reference TO-266AA 2N3904 731 jFET Array BFR30 "cross reference" 2N5308 cross reference 266AA PDF

    hengstler 890 manual

    Abstract: hengstler 890 hengstler 890 counter hengstler, 890 signo 727 Hengstler relay 890 Hengstler Hengstler counter 890 signo 727 operation manual Hengstler counter
    Text: Betriebsanleitung Operating instructions signo 727.1 Positionsanzeige mit/ohne Grenzwerte Position-Indicator with/without limit values Inhaltsverzeichnis Contents 1. 2. 2.1. 2.2. 2.2.1 2.2.2 2.3. 3. 3.1. 3.2. 3.3. 4. 4.1 4.2 4.3 4.4 5. 6. 7. 7.1. 7.2. 7.3


    Original     		D-78550 D-78554 hengstler 890 manual hengstler 890 hengstler 890 counter hengstler, 890 signo 727 Hengstler relay 890 Hengstler Hengstler counter 890 signo 727 operation manual Hengstler counter PDF

    Avantek, Inc

    Abstract: avantek Avantek amplifier AVANTEK transistor AT-01600 Avantek amplifier 140 avantek microwave Avantek, Inc. AT-01600-GP4 Avantek S
    Text: AVANTEK INC SOE D • 1 1 4 1 Tbb 000b447 AT-01600 ' Up to 4 GHz General Purpose Silicon Bipolar Transistor1 Chip . 1 • Features ' • ‘ . T - i • • • □ ■ I -2 .3 Avantek Chip Outline 22.0 dBm typical Pi dB at 2.0 GHz 10.5 dB typical Gi dB at 2.0 GHz


    OCR Scan     		AT-01600 AT-01600 Avantek, Inc avantek Avantek amplifier AVANTEK transistor Avantek amplifier 140 avantek microwave Avantek, Inc. AT-01600-GP4 Avantek S PDF

    avantek

    Abstract: AT-42035 Avantek, Inc 321E T-31-21 8v-312 Avantek amplifier 8 12 GHz Avantek amplifier 12.5 sa AVANTEK oscillator
    Text: AVANTEK Q SQE D I NC avantek • i m n t t AT-42035 Up to 6 GHz Medium Power Silicon Bipolar Transistor Avantek 35 micro-X Package Features • • • • • OQObMöT 5 High Output Power: 21.0 dBm typical Pi dB at 2.0 GHz 20.5 dBm typical Pt dB at 4.0 GHz


    OCR Scan     		AT-42035 AT-42035 microwave64 avantek Avantek, Inc 321E T-31-21 8v-312 Avantek amplifier 8 12 GHz Avantek amplifier 12.5 sa AVANTEK oscillator PDF

    2SC1892

    Abstract: E JHAA AC42C
    Text: 2/ U D > N P N = « f f i l b « . W h 5 > 2; ^ SILICON NPN TRIPLE DIFFUSED MESA TRANSISTOR O * ?- y V o Color TV Horizontal Outp u t A p p l ications • A 2 SC 1892 V CB 0 = 1 5 0 0 V • V cœ eat = 5 V (Typ.) ; -X -í y ; l&ZfcÆfè MAXIMUM RATINGS CHARACTERISTIC


    OCR Scan     		2sc1892 AC42C 2SC1892 E JHAA AC42C PDF

    Untitled

    Abstract: No abstract text available
    Text: g £ SOLID STATE 3875081 ~ G E SOLID Öl DE | 3ö?SGöl D017TÖ7 1 STATE 01E 17987 D _ !_ !_ !_ Signal Transistors MPS-A13, MPS-A14 T ,2 <7-27 Silicon Darlington Transistors TO-92 T h e G E /R C A M P S -A 1 3 a n d A 1 4 a re p la n a r e p ita x ia l p assivate d N PN silico n D a rlin g to n tra n s is to rs d e sig n e d fo r p re a m p lifie r in p u t a p p lic a tio n s w h e re h ig h im p e d a n c e is a


    OCR Scan     		D017T MPS-A13, MPS-A14 MPS-A13 MPS-A14 100kHz) 100kQ 300ps PDF

    BFW61

    Abstract: FET BFW61 N CHANNEL FET BFW61 transistor TO-72 727 Transistor power values VDS-15 ad357
    Text: J BFW61 '- N-CHANNEL SILICON FET Symmetrical n-channel silicon planar epitaxial junction field-effect transistor in a TO-72 metal envelope with the shield lead connected to the case. The transistor is designed for general purpose amplifiers.


    OCR Scan     		BFW61 200/iA BFW61 FET BFW61 N CHANNEL FET BFW61 transistor TO-72 727 Transistor power values VDS-15 ad357 PDF

    BFW61

    Abstract: No abstract text available
    Text: BFW61 J V N-CHANNEL SILICON FET Symmetrical n-channel silicon planar epitaxial junction field-effect transistor in a TO-72 metal envelope with the shield lead connected to the case. The transistor is designed fo r general purpose amplifiers. QUICK REFERENCE DATA


    OCR Scan     		BFW61 btj53T31 357T2 BFW61 PDF

    Untitled

    Abstract: No abstract text available
    Text: Ordering num ber:EN 2 4 3 0 2SD1883 NPN Triple Diffused Planar Silicon Transistor SAiYO Color TV Horizontal Deflection , Output Applications i Applications . Color TV horizontal deflection output . Color display horizontal deflection output Features . High speed tf=100ns


    OCR Scan     		2SD1883 100ns 2039D 2207TA 2430-l/3 5707b PDF

    marking cev

    Abstract: No abstract text available
    Text: Central" CZTUX87 Semiconductor Corp. SURFACE MOUNT HIGH VOLTAGE NPN SILICON POWER TRANSISTOR DESCRIPTION: POWER The CENTRAL SEMICONDUCTOR CZTUX87 type is a NPN Silicon Power Transistor epoxy molded in a surface mount package, designed for high voltage switching applications.


    OCR Scan     		CZTUX87 OT-223 100mA, 200mA, 14-November marking cev PDF

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SD1457, 2SD1457A 2SD1457, 2SD1457A Silicon NPN Triple-Diffused Planar Darlington Type Power A m plifier • Features • High DC current gain Iif e • High collector-base voltage (V cbo ) • “Full Pack” package for simplified mounting on a heat sink with one


    OCR Scan     		2SD1457, 2SD1457A 2SD1457 PDF

    2SD1956

    Abstract: 2SD1957 ld7a
    Text: V 7. $ /Transistors 2SD1957 2SD1957 NPN v ' ; = i > h -7 > y 'z$ M J M i Freq. Power Amp. Triple Diffused Planar NPN Silicon Transistor Sir>4Vi.V^i-r K ~7> • W Fi'+ jilll/D im e nsio n s Unit: mm • *8:1: 1) hFE : hFE= 3 0 0 (Typ.)o 2) Vce (sat) 'o V ce (sat)= 0.2V (Typ.)


    OCR Scan     		2SD1957 T0-220 2SD1956 TQ-220FP fS14/Electrical 10MHz 2SD1956 2SD1957 ld7a PDF