BFQ741
Abstract: No abstract text available
Text: Objective specification Philips Semiconductors ' '3 3 -Q5 NPN 7 GHz wideband transistor PH IL IP S I N T E R N A T I O N A L FEATURES 5L.E D • BFQ741 711GflEb ODMSbflO 727 ■ P H I N PINNING DESCRIPTION PIN • Low distortion • Gold metallization ensures
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BFQ741
7110A5b
OT172
OT172A1
OT172A1.
BFQ741
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4 pin dual-emitter
Abstract: dual-emitter BFQ741 UBC869 philips MATV amplifiers
Text: Objective specification Philips Semiconductors y NPN 7 GHz wideband transistor PHILIPS INTERNATIONAL FEATURES 5L.E D ' 3 3 -0 5 BFQ741 WM 7110flEb OOMSbflO 727 • P H I N PINNING • Low distortion DESCRIPTION PIN • Gold metallization ensures excellent reliability
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33-Q5
BFQ741
7110AEb
OT172
OT172A1
UBC869
OT172A1.
4 pin dual-emitter
dual-emitter
BFQ741
UBC869
philips MATV amplifiers
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4000 npn
Abstract: 122e
Text: 56 RF/Microwave Devices RF Wideband Transistors Type No. BFQ54T BFQ63 BFQ65 BFQ66 BFQ67 BFQ67W BFQ68 BFQ108 BFQ135 BFQ136 BFQ149 BFQ270 BFQ621 BFQ741 BFR53 BFR90 BFR90A BFR91 BFR91A BFR92 BFR92A BFR92AW BFR93 BFR93A BFR93AW BFR94A BFR95 BFR96 BFR96S BFR106
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BFQ54T
BFQ63
BFQ65
BFQ66
BFQ67
BFQ67W
BFQ68
BFQ108
BFQ135
BFQ136
4000 npn
122e
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors b b S B IB l Q D B l ? 11! ! 151 W IAPX Objective specification NPN 7 GHz wideband transistor BFQ741 N AMER PHILIPS/DISCRETE FEATURES bRE J> PINNING • Low distortion PIN DESCRIPTION • Gold metallization ensures excellent reliability
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BFQ741
OT172A1
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BFQ741
Abstract: No abstract text available
Text: bbSB^Bl Q GB l ? 11 ! IBI WIAPX Philips Sem iconductors Objective specification NPN 7 GHz wideband transistor BFQ741 N AMER PHILIPS/DISCRETE FEATURES bRE D PINNING DESCRIPTION PIN • Low distortion • Gold metallization ensures excellent reliability 1 collector
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DG317T1
BFQ741
OT172
OT172A1
OT172A1.
BFQ741
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fr91a
Abstract: philips bfq FQ235a t122 25 3 FQ262a fr90a 122e BFR134 t122 25 10 t122 25 72
Text: 22 Small Signal Leaded Devices Wideband Transistors cont. h FE R a tin g s Type P ackage v CEO V S O T -103 S O T -103 S O T -103 S O T -103 S O T -173 S O T -173 S O T -173 S O T -173 S O T -173 S O T -173 TO -72 S O T -173 S O T -122 S O T-37 TO -72 TO -72
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BFG96
BFP96
BFP505
BFP520
BFP540
BFQ33C
BFQ63
BFQ65
BFQ66
BFQ161
fr91a
philips bfq
FQ235a
t122 25 3
FQ262a
fr90a
122e
BFR134
t122 25 10
t122 25 72
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bf0262a
Abstract: BF0262 OM335 1N5821ID OM336 OM2061 OM926 BUK645 OM2060 BLY94
Text: Alphanumeric Type Index Typo Page Type Page Type Page Page Type 1N821 1N821A 1N823 1N823A 1N825 11 11 11 11 11 1N5227B 1N5228B 1N5229B 1N5230B 1N5231B 13 13 13 13 13 2N2905A 2N2906 2N2906A 2N2907 2N2907A 17 17 17 17 17 2N6599 2N6600 2N6601 2N7000 2N7002 1N825A
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1N821
1N821A
1N823
1N823A
1N825
1N825A
1N827
1N827A
1N829
1N829A
bf0262a
BF0262
OM335
1N5821ID
OM336
OM2061
OM926
BUK645
OM2060
BLY94
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BFT92A
Abstract: BFT93A BFG134 bf689 sot37 sot173 BFG34 BFQ52 bfg65 sot143 philips bfw92
Text: 52 RF/Microwave Devices First Generation RF W ideband Transistors fT to 3.5 GHz metal can fr/ lc Curve Polarity (1) (2) N PN NPN (3) (4) (5) NPN NPN NPN (6) (18) NPN NPN TO-39 surface mount plastic TO-72 TQ-92 BFY90 BF689K BF763 BFW30 SOt-37 ceramic SOT-122E
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BFY90
TQ-92
BF689K
BF763
SOt-37
BFT24
BFW92
BFW93
OT-122E
OT-23
BFT92A
BFT93A
BFG134
bf689
sot37
sot173
BFG34
BFQ52
bfg65 sot143
philips bfw92
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BFG591 amplifier
Abstract: SC08a bfr591 sot173x BB544 sot122 sot172 bfg65 sot143 SIEMENS BFP520 macro-X ceramic
Text: Philips Semiconductors Semiconductors for Telecom systems Selection List General For further information, refer to Data Handbook S C 1 4,1993; "RF Wideband Transistors", except otherwise specified. RF wideband transisto rs March 1993 14 Philips Semiconductors
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OT122
OT143
OT223
OT323
BFS17W
BFG17A
BFG16A
BF547W
BF747W
BFT25
BFG591 amplifier
SC08a
bfr591
sot173x
BB544
sot122
sot172
bfg65 sot143
SIEMENS BFP520
macro-X ceramic
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