5962-9084703MNA
Abstract: JEDEC MO-110 ras 0910 5v RAS 0610
Text: DRAM MT4C4001J Austin Semiconductor, Inc. PIN ASSIGNMENT 1 MEG x 4 DRAM Top View Fast Page Mode DRAM 20-Pin DIP (C, CN) AVAILABLE AS MILITARY SPECIFICATIONS DQ1 DQ2 WE\ RAS\ A9 A0 A1 A2 A3 Vcc • SMD 5962-90847 • MIL-STD-883 FEATURES • Industry standard x4 pinout, timing, functions, and
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Original
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MIL-STD-883
20-Pin
MT4C4001J
300mW
024-cycle
refresh62-9084701MNA
MT4C4001JC-8/883C
5962-9084703MNA
JEDEC MO-110
ras 0910
5v RAS 0610
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PDF
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Untitled
Abstract: No abstract text available
Text: ADVANCE MICRON MT4LC16257 S I 2256KX 5 6 K X 16 DRAM DRAM 256K x 16 DRAM 3.3V, FAST PAGE MODE, OPTIONAL SELF REFRESH PIN ASSIGNMENT (Top View) • Industry-standard x l6 pinouts, timing, functions and packages • High-perform ance CMOS silicon-gate process
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OCR Scan
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MT4LC16257
256KX
512-cycle
MT4LC16257)
T4LC16257S)
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PDF
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Untitled
Abstract: No abstract text available
Text: ADVANCE M IC.nRwOi'« N I iih MT4LC16270 256KX 16 DRAM 2 5 6 K X 16 DRAM DRAM 3.3V, EDO PAGE MODE FEATURES PIN ASSIGNMENT Top View • Single +3.3V ±0.3V power supply* • Industry-standard xl6 pinouts, timing, functions and packages • High-performance CMOS silicon-gate process
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OCR Scan
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T4LC16270
256KX
512-cycle
40-Pin
MT4LC16270
MT4LC1627Q
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PDF
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Untitled
Abstract: No abstract text available
Text: ADVANCE MT4LC8M8P4/C2 I^IICZR O N 8 MEG X 8 DRAM 8 MEG x 8 DRAM DRAM 3.3V, EDO PAGE MODE FEATURES PIN ASSIGNMENT Top View • Single +3.3V +0.3V power supply • Industry-standard x8 pinout, timing, functions and packages • 13 row-addresses, 10 column-addresses (P4) or
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OCR Scan
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096-cycle
34-Pin
DD12Dc
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PDF
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Untitled
Abstract: No abstract text available
Text: MT4C2M8E7 S 2 MEG x 8 DRAM MICRON I TECHNOLOGY, INC. DRAM 2 MEG x 8 DRAM 5.0V, EDO PAGE MODE, OPTIONAL SELF REFRESH FEATURES PIN ASSIGNMENT (Top View) • Industry-standard x8 pinout, timing, functions and packages • High-performance CMOS silicon-gate process
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OCR Scan
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270mW
048-cycle
28-Pin
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PDF
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Untitled
Abstract: No abstract text available
Text: m i t i » MT4C16256/7/8/9 L 256K X 1 6 WIDE DRAM MICRON • SEMICONDUCTOR. MC WIDE DRAM 256KX16DRAM LOW POWER, EXTENDED REFRESH FEATURES PIN ASSIGNMENT Top View • Industry-standard xl6 pinouts, timing, functions and packages • High-performance CMOS silicon-gate process
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OCR Scan
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MT4C16256/7/8/9
256KX16DRAM
MT4C16257
MT4C16258/9
512-cycle
500mW
T4C1S256/7/VU.
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PDF
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Untitled
Abstract: No abstract text available
Text: 4 MEG x 4 EDO DRAM MT4LC4M4E8, MT4LC4M4E9 DRAM For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html FEATURES PIN ASSIGNMENT Top View • Industry-standard x4 pinout, timing, functions and packages
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OCR Scan
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24/26-Pin
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PDF
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Untitled
Abstract: No abstract text available
Text: '993 Tí* PRELIMINARY MT4C16256/7/8/9 256K X 16 WIDE DRAM MICRON I SCHICONDUCTOR MC WIDE DRAM 256K X 16 DRAM FAST-PAGE-MODE FEATURES OPTIONS PIN ASSIGNMENT Top View 40-Pin SOJ (DC-6) Vcc [ 1 DOl [ 2 D02 E 3 D03 E 4 004 [ 5 • Write Cycle Access _ BYTE or WORD via WE
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OCR Scan
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MT4C16256/7/8/9
40-Pin
C1993
MT4C162S6/7/V9
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PDF
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY MT4LC4007J S 1 MEG X 4 DRAM DRAM 1 MEG x 4 DRAM 3.3V EDO PAGE MODE, OPTIONAL SELF REFRESH FEATURES • • • • • • • • • • Single +3.3V ±0.3V power supply Low power, 250|xW standby; lOOmW active, typical JEDEC-standard pinout and packages
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OCR Scan
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MT4LC4007J
024-cycle
128ms
25-35ns
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PDF
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Untitled
Abstract: No abstract text available
Text: MICRON SEMICONDUCTOR INC b3E D blllSM'i ODD7bflS 522 • MRN PRELIMINARY MT4C4M4A1/B1 4 MEG X 4 DRAM I^ IC R O N DRAM 4 MEG X 4 DRAM FEATURES • Industry-standard x4 pinout, tim ing, functions and packages • High-performance CM OS silicon-gate process • Single power supply : +5V ±10%
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OCR Scan
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325mW
048-cycle
096-cycle
24-Pin
A11/NC
A0-A11;
0007bT4
A0-A11
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PDF
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Untitled
Abstract: No abstract text available
Text: niCRON SEMICONDU CTOR INC b'iE D • hlllSMT □ □ G tìtì3tì 'iflT ■ URN M IC R O N I MT4C16260 256K X 16 DRAM SIM,CONDUCTOR ISC. DRAM 256K X 16 DRAM ASYMMETRICAL, FAST PAGE MODE FEATURES • Industry-standard x l6 pinouts, tim ing, functions and packages
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OCR Scan
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MT4C16260
024-cycle
C-1994.
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PDF
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Untitled
Abstract: No abstract text available
Text: ADVANCE MICRON 4 MEG TECHNOLOGY. INC U SMALL-OUTLINE DRAM MODULE 16 MEGABYTE, 3.3V, FAST PAGE MODE, OPTIONAL SELF REFRESH 72-Pin Small-Outline DIMM DE-5 SOJ version (DE-3) TSOP version -6 -7 D DT Packages 7 2 -pin Small-Outline DIMM (gold) Refresh Standard/32m s
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OCR Scan
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72-Pin
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PDF
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Untitled
Abstract: No abstract text available
Text: ADVANCE IC R O IM 512K WIDE DRAM X MT4C8512/3 S 8 WIDE DRAM 512K x 8 DRAM FEATURES • Industry-standard x8 pinouts, timing, functions and packages • Address entry: ten row-addresses, nine columnaddresses • High-performance CMOS silicon-gate process • Single +5V ±10% power supply
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OCR Scan
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MT4C8512/3
MT4C8513
024-cycle
128ms
350mW
28-Pin
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PDF
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Untitled
Abstract: No abstract text available
Text: 1,2 , 4 MEG X 32 DRAM SODIMMs MICRON I TECHNOLOGY INC SMALL-OUTLINE DRAM MODULE MT2LDT132H X (S) MT4LDT232H (X) (S) MT8LDT432H(X)(S) FEATURES • JEDEC- and industry-standard pinout in a 72-pin, small-outline, dual in-line memory module (DIMM) • 4MB (1 Meg x 32), 8MB (2 Meg x 32),
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OCR Scan
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MT2LDT132H
MT4LDT232H
MT8LDT432H
72-pin,
024-cycle
048-cycle
128ms
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PDF
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY .ü ïïi04,0^ !? -j, MEG x 4 DRAM « ch«oL„ „ « DRAM 1 MEG x 4 DRAM FEATURES * * » * «• Single +5V ±10% power supply JEDEC-standard pinout and packages High-perform ance CMOS silicon-gate process All inputs, outputs and clocks are TTL-com patible
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OCR Scan
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024-cycle
128ms
25-35ns
128ms
MT4C4007J
001E024
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PDF
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Untitled
Abstract: No abstract text available
Text: ADVANCE M IC R O N 1 MT4LG16257 S 256K DRAM DRAM 256K x 16 DRAM 3.3V FAST PAGE MODE, OPTIONAL SELF REFRESH FEATURES • Industry-standard xl6 pinouts, timing, functions and packages • High-performance CMOS silicon-gate process • Single +3.3V ±0.3V power supply*
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OCR Scan
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MT4LG16257
175mW
512-cycle
MT4LC16257)
MT4LC16257S)
MT4LC16257
CYCLE24
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PDF
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Untitled
Abstract: No abstract text available
Text: M IC R O N □ P A M _ _ _ _ . . . 512K MT16D51232 32. 1 MEG x 16 DRAM MODULE X 5 1 2 K _ x 3 2 > 1 M E G x 16 FAST PAGE MODE (MT16D51232 LOW POWER, EXTENDED REFRESH (MT16D51232 L) MODULE IV IV /U U I.L . FEATURES PIN ASSIGNMENT (Top View) OPTIONS 72-Pin SIMM
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OCR Scan
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MT16D51232
MT16D51232)
MT16D51232
72-Pin
Power/64ms
MT1BD51232
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PDF
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tc 97101
Abstract: D472
Text: ADVANCE M IC B D N I ' I 4 MEG BURST EDO DRAM MODULE MT9LD272 B N , MT18LD472 B(N) 72 BURST ED0 DRAM MODULES 2, 4 MEG X 72 16, 32 MEGABYTE, 3.3V, ECC, BURST EDO FEATURES • • • • • • • • • 168-pin, dual-in-line memory module (DIMM) ECC pin-out
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OCR Scan
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MT9LD272
MT18LD472
168-pin,
048-cycle
T18LCW
tc 97101
D472
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PDF
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY M IC R O N 256K WIDE DRAM X MT4C16260/1 16 WIDE DRAM 256K X 16 DRAM FEATURES • Industry-standard x l6 pinouts, timing, functions and packages • A ddress entry: ten row-addresses, eight columnaddresses • High-performance CMOS silicon-gate process
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OCR Scan
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MT4C16260/1
500mW
024-cycle
MT4C16261
40-Pin
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PDF
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Untitled
Abstract: No abstract text available
Text: ADVANCE MT4 L C1M16C3/5/6/7 S 1 MEG X 16 WIDE DRAM MICRON WIDE DRAM 1 MEG 16DRAM X 5.0V SELF REFRESH (MT4C1M16C3/5/6/7 S) 3.0/3.3V, SELF REFRESH (MT4LC1M16C3/5/6/7 S) FEATURES PIN ASSIGNMENT (Top View) OPTIONS • Timing 60ns access 70ns access 80ns access
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OCR Scan
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C1M16C3/5/6/7
16DRAM
MT4C1M16C3/5/6/7
MT4LC1M16C3/5/6/7
42-Pin
C1M16C3/V6/7S
M16C3/5/6/7
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PDF
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Untitled
Abstract: No abstract text available
Text: 2 MEG x 8 EDO DRAM M IC R O N HRAM MT4LC2M8E7 MT4C2M8E7 U n M IV I FEATURES PIN ASSIGNMENT (Top View OPTIONS 28-Pin SOJ (DA-3) Vcc [ 1* DÛ1 [ 2. DQ2¿ 3 003 r 4 DQ4 5 WE# C 6 RAS# C 7 NCC 3 AIO L 9 A0 L 10 A1 C t t A2 12 A3 t 13 Vcc [ 14 MARKING • Voltages
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OCR Scan
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28-Pin
28-PiD
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PDF
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY MT4LC4007J S 1 MEG X 4 DRAM I^IICRON 1 MEG x 4 DRAM DRAM FEATURES • • • • • • • • • • PIN ASSIGNMENT (Top View) Single +3.3V ±0.3V power supply Low power, 0.25mW standby; 115mW active, typical JEDEC-standard pinout and packages
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OCR Scan
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MT4LC4007J
115mW
024-cycle
128ms
150nA
25-35ns
GD12D4Q
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PDF
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Untitled
Abstract: No abstract text available
Text: m . i s MT4C16256/7/8/9 256K X 16 WIDE DRAM MICRON • ««ICOHOliCTOR MC WIDE DRAM 256K X 16 DRAM FAST-PAGE-MODE FEATURES • Industry-standard xl6 pinouts, timing, functions and packages • High-performance CMOS silicon-gate process • Single +5V ±10% pow er supply*
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OCR Scan
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MT4C16256/7/8/9
512-cycle
MT4C16257/9
MT4C16258/9
Tim93
MT4C162SS/7/I/9
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PDF
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Untitled
Abstract: No abstract text available
Text: ED06DRAM TECHNOLOGY, INC. DRAM M T4C 16270 For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html FEATURES • Industry-standard x l6 pinouts, timing, functions and packages • High-performance CMOS silicon-gate process
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OCR Scan
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ED06DRAM
512-cycle
40-Pin
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PDF
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