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    CY7B16 Price and Stock

    Cypress Semiconductor CY7B162-12VC

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    Bristol Electronics CY7B162-12VC 45
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    Quest Components CY7B162-12VC 1,050
    • 1 $6.75
    • 10 $6.75
    • 100 $6.75
    • 1000 $2.475
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    Cypress Semiconductor CY7B166-12VC

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    Bristol Electronics CY7B166-12VC 97 1
    • 1 $9.856
    • 10 $4.928
    • 100 $4.2706
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    Quest Components CY7B166-12VC 39
    • 1 $13.2
    • 10 $6.6
    • 100 $6.16
    • 1000 $6.16
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    Cypress Semiconductor CY7B161-12VC

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    Bristol Electronics CY7B161-12VC 69
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    Quest Components CY7B161-12VC 28
    • 1 $26.806
    • 10 $26.806
    • 100 $25.775
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    CY7B161-12VC 55
    • 1 $49.488
    • 10 $49.488
    • 100 $39.5904
    • 1000 $39.5904
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    Cypress Semiconductor CY7B166-8VC

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    Bristol Electronics CY7B166-8VC 1,530
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    Cypress Semiconductor CY7B162-10VC

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    Bristol Electronics CY7B162-10VC 2,026 2
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    • 10 $2.912
    • 100 $2.0908
    • 1000 $1.8368
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    Quest Components CY7B162-10VC 140
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    CY7B162-10VC 1,620
    • 1 $6
    • 10 $6
    • 100 $6
    • 1000 $2.4
    • 10000 $2.1
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    Find more CY7B16 price and stock on Findchips.com

    CY7B16 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CY62256LL-PC

    Abstract: VIC068A-GC VIC64-NC VIC64-UMB PALCE22V10-JI PALC16L8Q PLD VME A113 CY7B923 JESD22-A113
    Text: Cypress Semiconductor Product Reliability 1997 Published June, 1997 CYPRESS SEMICONDUCTOR PRODUCT RELIABILITY TABLE OF CONTENTS 1.0 OVERVIEW OF CYPRESS SEMICONDUCTOR TOTAL QUALITY MANAGEMENT SYSTEM. 1 2.0 ELECTRICAL AVERAGE OUTGOING QUALITY. 2


    Original     		PDF PALCE22V10-JC FLASH-FL22D CY62256LL-PC VIC068A-GC VIC64-NC VIC64-UMB PALCE22V10-JI PALC16L8Q PLD VME A113 CY7B923 JESD22-A113

    cy7c9101

    Abstract: CY2901 CY7C190 PLD20RA10 CY2149 CY7C122 CY7C148 CY7C149 CY7C150 22V10-Macrocell
    Text: Military Product Selector Guide Static RAMs Size Organization 64 64 1K 1K 4K 4K 4K 4K 4K 8K 8K 16K 16K 16K 16K 16K 16K 16K 16K 16K 32K 32K 32K 32K 32K 64K 64K 64K 64K 64K 64K 64K 64K 64K 64K 64K 64K 64K 64K 64K 64K 256K 256K 256K 256K 256K 256K 256K 1M 1M


    Original     		PDF MILSTD883D 22pin 24pin 28pin 32pin 300mil cy7c9101 CY2901 CY7C190 PLD20RA10 CY2149 CY7C122 CY7C148 CY7C149 CY7C150 22V10-Macrocell

    CY7B185

    Abstract: CY7B922 clock buffer FITS CY7B991 CY7B992 EME-6300H SM23B CY7B991-LMB
    Text: Qualification Report February, 1994 QTP# 92202&93462 Version 2.0 PROGRAMMABLE SKEWCLOCK BUFFER CY7B991 TTL CY7B992 (CMOS) QUALIFICATION REPORT February, 1994 Version 2.0 QTP # 92202/93462 PROGRAMMABLE SKEW CLOCK BUFFER CY7B991 (TTL) CY7B992 (CMOS) CYPRESS TECHNICAL CONTACT FOR QUALIFICATION DATA:


    Original     		PDF CY7B991 CY7B992 CY7B991 JEDEC22, 30PSIA CY7B185 CY7B922 clock buffer FITS CY7B992 EME-6300H SM23B CY7B991-LMB

    CY27S03A

    Abstract: 15JC10 CY7C190 cy7c9101 cy7c122 die VIC068A user guide
    Text: Thermal Management and Component Reliability slope of the logarithmic plots is given by the activation energy of the failure mechanisms causing thermally activated wear out of the device see Figure 1 . One of the key variables determining the long-term reliability


    Original     		PDF CY7C122 CY27S03A 15JC10 CY7C190 cy7c9101 cy7c122 die VIC068A user guide

    Untitled

    Abstract: No abstract text available
    Text: CY7B161 CY7B162 f ' YPPI7QC! SEMICONDUCTOR Features Functional Description • U ltra high speed — 8 ns tAA • Low active power — 700 mW • Low standby power — 250 mW • Transparent write (7B161 • BiCMOS for optimum speed/power • TTL-compatible inputs and outputs


    OCR Scan     		PDF CY7B161 CY7B162 7B161) CY7B161 CY7B162 7B161 8-A-00014-D

    CY7B161

    Abstract: CY7B162 A10C CY7B162-15DMB
    Text: CY7B161 CY7B162 CYPRESS SEMICONDUCTOR 16K x 4 Static RAM Separate I/O into th e m em ory location specified on the address pins Ao through A 1 3 . Features Functional Description • Ultra high speed — 8 n s tAA • Low active power — 700 mW • Low standby power


    OCR Scan     		PDF 7B161) CY7B161 CY7B162 CY7B162â 15LMB 28-Pin 7B161 8-A-00014-E A10C CY7B162-15DMB

    Untitled

    Abstract: No abstract text available
    Text: CY7B161 CY7B162 n Y p p p c q Features Functional D escription • Ultra high speed T he CY7B161 and CY 7B162 are highperform ance B iC M O S static R A M s orga­ nized as 16,384 by 4 bits w ith separate I/O . Easy m em ory expansion is provided by ac­ tive LO W chip en ab les Cl'-i, CF-2 and


    OCR Scan     		PDF CY7B161 CY7B162 7B162 AWE1151 7H161 8-A-00014-D

    Untitled

    Abstract: No abstract text available
    Text: — =Z1- CY7B164 CY7B166 ^ CYPRESS SEMICONDUCTOR Features • Ultra high speed — U a = 8 ns • Low active power — 700 mW • Low standby power — 250 mW • BiCMOS for optimum speed/power • Output Enable ÖE feature (7B166) • TTL-compatible inputs and outputs


    OCR Scan     		PDF CY7B164 CY7B166 7B166) Y7B164 CY7B166 166only.

    Untitled

    Abstract: No abstract text available
    Text: C*yppucc CY7B163 Expandable 262,144 x 1 Static R/W RAM with Separate I/O ADVANCED INFORMATION SEMICONDUCTOR Features • High speed - 12 ns • Five chip enables C E |, j ,j and CE4,5 to expand memory • BiCMOS for optimum speed/power • Low active power


    OCR Scan     		PDF CY7B163 CCY7B163-20VC CY7B163-20DC CY7B163-20LC CY7B163-20DMB CY7B163-20LMB CY7B163

    CY7B161-12PC

    Abstract: b1615 B1616
    Text: PRELIMINARY r ’V P P F Q O 16,384x4 Static RAM Separate I/O SEMICONDUCTOR Features Functional Description • High speed - 10 ns t* The CY7B161 and CY7B162 are high-performance BiCMOS static RAMs orga­ nized as 16,384 by 4 bits with separate I/O. These RAMs are developed by Aspen


    OCR Scan     		PDF CY7B161 CY7B162 7B161) 384x4 8-A-00014-A CY7B161-12PC b1615 B1616

    7B164-15

    Abstract: 910U
    Text: _ PRELIM INARY SEMICONDUCTOR 16,384 x 4 Static R/W RAM Features Functional Description • BiCMOS for optimum speed/power • High speed - 10 ns t* T he CY7B164 and CY7B166 are high-performance BiCMOS static RAMs organized as 16,384 x 4 bits. These RAMs are devel­


    OCR Scan     		PDF CY7B164 CY7B166 7B166) 7B166 8-A-00015-A 7B164-15 910U

    Untitled

    Abstract: No abstract text available
    Text: CY7B164 CY7B166 CYPRESS SEMICONDUCTOR 16K x 4 Static RAV RAM Features Functional Description • Ultra high speed — tAA = 8 ns T h e CY7B164 an d CY 7B166 a re highp erform ance BiC M O S static R A M s org a­ nized as 16,384 x 4 bits. Easy m em ory ex­


    OCR Scan     		PDF CY7B164 CY7B166 7B166) 7B166--12LMB 7B166--15DMB 7B166--15LMB 7B166

    i6612

    Abstract: No abstract text available
    Text: CY7B164 CY7B166 r v p p r q q SEMICONDUCTOR 16,384 x 4 Static R/W RAM Features Functional Description • BiCMOS for optimum speed/power T h e CY7B164 and CY7B166 are high-per­ form ance BiCM O S static R A M s organized as 16,384 x 4 bits. Easy m em ory expansion


    OCR Scan     		PDF CY7B164 CY7B166 7B166) i6612

    CY7B166

    Abstract: CY7B164 7B164 CY7B166-12PC a13c 12LMB CY7B16 7B166 8J45
    Text: CY7B164 CY7B166 CYPRESS SEMICONDUCTOR 16K x 4 Static R/W RAM Features Functional Description • Ultra high speed — tAA = 8 ns • Low active power — 700 mW • Low standby power — 250 mW • BiCMOS for optimum speed/power • Output enable OE feature (7B166)


    OCR Scan     		PDF CY7B164 CY7B166 7B166) 12LMB 28-Pin CY7B166â 15DMB 7B164 CY7B166-12PC a13c CY7B16 7B166 8J45

    CY7B161

    Abstract: No abstract text available
    Text: CY7B161 CY7B162 A? I CYPRESS SEMICONDUCTOR 16K x 4 Static RAM Separate I/O Features Functional Description • Ultra high speed — 8 ns Iaa • Low active power — 700 mW • Low standby power — 250 mW • Transparent write 7B161 • BiCMOS for optimum speed/power


    OCR Scan     		PDF CY7B161 CY7B162 7B162 7B161) 7B161 8-A-00014-E

    Untitled

    Abstract: No abstract text available
    Text: CY7B164 CY7B166 CYPRESS SEMICONDUCTOR 16K x 4 Static R/W RAM Features Functional Description • Ultra high speed T h e CY 7B164 and CY 7B166 are highperfo rm an ce B iC M O S static R A M s orga­ nized as 16,384 x 4 bits. Easy m em ory ex­ pansion is provided by an active LO W


    OCR Scan     		PDF CY7B164 CY7B166 7B166) 7B164 7B166 166--15DM 166--15LMB --00015--G

    Untitled

    Abstract: No abstract text available
    Text: = - CY7B164 CY7B166 ^ -16,384 x 4 Static RAV RAM ¿s CYPRESS SEMICONDUCTOR Features Functional Description • Ultra high speed — tAA = 8 ns • Low active power — 700 mW • Low standby power — 250 mW • BiCMOS for optimum speed/power • Output Enable OE feature (7B166)


    OCR Scan     		PDF CY7B164 CY7B166 7B166) CY7B164 CY7B166 7B166onIy.

    Untitled

    Abstract: No abstract text available
    Text: CY7B160 CYPRESS SEMICONDUCTOR Expandable 16,384 x 4 Static RAM Features Functional Description • T h e C Y 7B 160 is a h ig h -p e rfo rm a n c e B iC M O S s ta tic R A M o rg a n iz e d as 16,348 x 4 bits. A m e m o ry ex p a n sio n fe a tu re is p ro v id e d to save access tim e by e lim in a tin g


    OCR Scan     		PDF CY7B160

    16310p

    Abstract: No abstract text available
    Text: CY7B163 CYPRESS SEMICONDUCTOR Expandable 256K x 1 Static R/W RAM with Separate I/O Features F u nctional D escription • High speed T he CY7B163 is a high-perform ance B iC M O S static RAM organized as 256K w ords by I bit. Easy m em ory expansion is provided five chip enables for each p art


    OCR Scan     		PDF CY7B163 CY7B163 16310p

    J61-10

    Abstract: No abstract text available
    Text: CY7B161 CY7B162 CYPRESS SEMICONDUCTOR 16,384 x 4 Static RAM Separate I/O Features Functional Description • T h e CY7B161 and C Y 7BI62 are high-per­ form ance BiCM OS static RAM s orga­ nized as 16,384 by 4 bits with separate I/O . T hese R A M s are developed by A spen


    OCR Scan     		PDF CY7B161 CY7B162 7B162 CY7B16ry CY7B162 8-A-00014-B J61-10

    Untitled

    Abstract: No abstract text available
    Text: _ CY7B160 — — ^ SEMICONDUCTOR Expandable 16,384 x 4 Static RAM Features Functional Description • T h e C Y 7B 160 is a h ig h -p e rfo rm a n c e B iC M O S s ta tic R A M o rg a n iz e d as 16,348 x 4 bits. A m e m o ry ex p a n sio n fe a tu re is


    OCR Scan     		PDF CY7B160

    toshiba 32k*8 sram

    Abstract: M5M23C100 M5M5265 seeq DQ2816A M5M23C400 MB832001 HITACHI 64k DRAM TC511000 KM41C464 TC51464
    Text: FUNCTION GUIDE MEMORY ICs 3. CROSS REFERENCE GUIDE 3.1 DRAM Density 64 K X 1 256K X 1 X4 1M X X 4M X X 3.2 Mode Org. 1 4 1 4 Samsung Toshiba Hitachi Fujitsu NEC MSM3764 KM4164 Page Okl F. Page KM41C256 TC51256 Nibble KM41C257 TC51257 HM51256 S. Column KM41C258


    OCR Scan     		PDF KM4164 KM41C256 KM41C257 KM41C258 KM41C464 KM41C466 KM41C1000 KM41C1001 KM41C1002 KM44C256 toshiba 32k*8 sram M5M23C100 M5M5265 seeq DQ2816A M5M23C400 MB832001 HITACHI 64k DRAM TC511000 TC51464

    41C1000

    Abstract: fujitsu 814100 TC 55464 toshiba HN62304 hn623257 658128 816b 41c464 hn62324 M7202A
    Text: MEM ORY ICs FUNCTION GUIDE 3. C R O S S REFERENCE GUIDE 3.1 DRAM Density Org. Samsung Mode Toshiba Hitachi Fujitsu H M 51 256 M B 81256 NEC Oki 64K X 1 Page K M 416 4 25 6 K X 1 F. Page KM 41C256 TC 51256 Nibble KM 41C257 TC51257 S. C olu m n KM 41C258 TC 51258


    OCR Scan     		PDF 41C256 41C257 41C258 41C464 41C466 41C1000 44C256 44C258 44C1002 TC51257 fujitsu 814100 TC 55464 toshiba HN62304 hn623257 658128 816b hn62324 M7202A

    Untitled

    Abstract: No abstract text available
    Text: 1 | s ^ = 7 Z * e S SEMICONDUCTOR Expandable 16,384 x 4 Static RAM Features Functional Description • T h e C Y 7 B 1 6 0 is a h igh -p erform an ce B iC M O S static R A M organ ized as 16,348 x 4 bits. A m em o ry ex p a n sio n featu re is provid ed to save a ccess tim e by elim in a tin g


    OCR Scan     		PDF CY7B160