cy7c9101
Abstract: CY2901 CY7C190 PLD20RA10 CY2149 CY7C122 CY7C148 CY7C149 CY7C150 22V10-Macrocell
Text: Military Product Selector Guide Static RAMs Size Organization 64 64 1K 1K 4K 4K 4K 4K 4K 8K 8K 16K 16K 16K 16K 16K 16K 16K 16K 16K 32K 32K 32K 32K 32K 64K 64K 64K 64K 64K 64K 64K 64K 64K 64K 64K 64K 64K 64K 64K 64K 256K 256K 256K 256K 256K 256K 256K 1M 1M
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MILSTD883D
22pin
24pin
28pin
32pin
300mil
cy7c9101
CY2901
CY7C190
PLD20RA10
CY2149
CY7C122
CY7C148
CY7C149
CY7C150
22V10-Macrocell
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CY27S03A
Abstract: 15JC10 CY7C190 cy7c9101 cy7c122 die VIC068A user guide
Text: Thermal Management and Component Reliability slope of the logarithmic plots is given by the activation energy of the failure mechanisms causing thermally activated wear out of the device see Figure 1 . One of the key variables determining the long-term reliability
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PDF
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CY7C122
CY27S03A
15JC10
CY7C190
cy7c9101
cy7c122 die
VIC068A user guide
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CY7C9101
Abstract: CY7C510 CY7C190 cy7c189 G30-88 CY7c910 EA 9394 cy3341 CY6116 cy7c901
Text: fax id: 8511 Thermal Management Thermal Management and Component Reliability One of the key variables determining the long-term reliability of an integrated circuit is the junction temperature of the device during operation. Long-term reliability of the semiconductor chip degrades proportionally with increasing temperatures following an exponential function described by the
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Untitled
Abstract: No abstract text available
Text: CY7B161 CY7B162 f ' YPPI7QC! SEMICONDUCTOR Features Functional Description • U ltra high speed — 8 ns tAA • Low active power — 700 mW • Low standby power — 250 mW • Transparent write (7B161 • BiCMOS for optimum speed/power • TTL-compatible inputs and outputs
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CY7B161
CY7B162
7B161)
CY7B161
CY7B162
7B161
8-A-00014-D
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CY7B161
Abstract: CY7B162 A10C CY7B162-15DMB
Text: CY7B161 CY7B162 CYPRESS SEMICONDUCTOR 16K x 4 Static RAM Separate I/O into th e m em ory location specified on the address pins Ao through A 1 3 . Features Functional Description • Ultra high speed — 8 n s tAA • Low active power — 700 mW • Low standby power
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7B161)
CY7B161
CY7B162
CY7B162â
15LMB
28-Pin
7B161
8-A-00014-E
A10C
CY7B162-15DMB
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Untitled
Abstract: No abstract text available
Text: CY7B161 CY7B162 n Y p p p c q Features Functional D escription • Ultra high speed T he CY7B161 and CY 7B162 are highperform ance B iC M O S static R A M s orga nized as 16,384 by 4 bits w ith separate I/O . Easy m em ory expansion is provided by ac tive LO W chip en ab les Cl'-i, CF-2 and
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CY7B161
CY7B162
7B162
AWE1151
7H161
8-A-00014-D
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CY7B161-12PC
Abstract: b1615 B1616
Text: PRELIMINARY r ’V P P F Q O 16,384x4 Static RAM Separate I/O SEMICONDUCTOR Features Functional Description • High speed - 10 ns t* The CY7B161 and CY7B162 are high-performance BiCMOS static RAMs orga nized as 16,384 by 4 bits with separate I/O. These RAMs are developed by Aspen
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CY7B161
CY7B162
7B161)
384x4
8-A-00014-A
CY7B161-12PC
b1615
B1616
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EL36
Abstract: No abstract text available
Text: CY7B161 CY7B162 CYPRESS SEMICONDUCTOR 16K x 4 Static RAM Separate I/O Features Functional Description • Ultra high speed — 8 ns tAA • Low active power — 700 mW • Low standby power — 250 mW • Transparent write 7B161 • BiCMOS for optimum speed/power
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OCR Scan
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PDF
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CY7B161
CY7B162
7B161)
7B161
8-A-00014-E
EL36
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CY7B161
Abstract: No abstract text available
Text: CY7B161 CY7B162 A? I CYPRESS SEMICONDUCTOR 16K x 4 Static RAM Separate I/O Features Functional Description • Ultra high speed — 8 ns Iaa • Low active power — 700 mW • Low standby power — 250 mW • Transparent write 7B161 • BiCMOS for optimum speed/power
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OCR Scan
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PDF
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CY7B161
CY7B162
7B162
7B161)
7B161
8-A-00014-E
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J61-10
Abstract: No abstract text available
Text: CY7B161 CY7B162 CYPRESS SEMICONDUCTOR 16,384 x 4 Static RAM Separate I/O Features Functional Description • T h e CY7B161 and C Y 7BI62 are high-per form ance BiCM OS static RAM s orga nized as 16,384 by 4 bits with separate I/O . T hese R A M s are developed by A spen
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CY7B161
CY7B162
7B162
CY7B16ry
CY7B162
8-A-00014-B
J61-10
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