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    CY7B161 Search Results

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    CY7B161 Price and Stock

    Cypress Semiconductor CY7B161-12PC

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    Bristol Electronics CY7B161-12PC 10
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    Quest Components CY7B161-12PC 8
    • 1 $22.5
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    Cypress Semiconductor CY7B161-12VC

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    Quest Components CY7B161-12VC 28
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    CY7B161 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CY7B185

    Abstract: CY7B922 clock buffer FITS CY7B991 CY7B992 EME-6300H SM23B CY7B991-LMB
    Text: Qualification Report February, 1994 QTP# 92202&93462 Version 2.0 PROGRAMMABLE SKEWCLOCK BUFFER CY7B991 TTL CY7B992 (CMOS) QUALIFICATION REPORT February, 1994 Version 2.0 QTP # 92202/93462 PROGRAMMABLE SKEW CLOCK BUFFER CY7B991 (TTL) CY7B992 (CMOS) CYPRESS TECHNICAL CONTACT FOR QUALIFICATION DATA:


    Original     		PDF CY7B991 CY7B992 CY7B991 JEDEC22, 30PSIA CY7B185 CY7B922 clock buffer FITS CY7B992 EME-6300H SM23B CY7B991-LMB

    CY27S03A

    Abstract: 15JC10 CY7C190 cy7c9101 cy7c122 die VIC068A user guide
    Text: Thermal Management and Component Reliability slope of the logarithmic plots is given by the activation energy of the failure mechanisms causing thermally activated wear out of the device see Figure 1 . One of the key variables determining the long-term reliability


    Original     		PDF CY7C122 CY27S03A 15JC10 CY7C190 cy7c9101 cy7c122 die VIC068A user guide

    CY7C9101

    Abstract: CY7C510 CY7C190 cy7c189 G30-88 CY7c910 EA 9394 cy3341 CY6116 cy7c901
    Text: fax id: 8511 Thermal Management Thermal Management and Component Reliability One of the key variables determining the long-term reliability of an integrated circuit is the junction temperature of the device during operation. Long-term reliability of the semiconductor chip degrades proportionally with increasing temperatures following an exponential function described by the


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: CY7B161 CY7B162 f ' YPPI7QC! SEMICONDUCTOR Features Functional Description • U ltra high speed — 8 ns tAA • Low active power — 700 mW • Low standby power — 250 mW • Transparent write (7B161 • BiCMOS for optimum speed/power • TTL-compatible inputs and outputs


    OCR Scan     		PDF CY7B161 CY7B162 7B161) CY7B161 CY7B162 7B161 8-A-00014-D

    CY7B161

    Abstract: CY7B162 A10C CY7B162-15DMB
    Text: CY7B161 CY7B162 CYPRESS SEMICONDUCTOR 16K x 4 Static RAM Separate I/O into th e m em ory location specified on the address pins Ao through A 1 3 . Features Functional Description • Ultra high speed — 8 n s tAA • Low active power — 700 mW • Low standby power


    OCR Scan     		PDF 7B161) CY7B161 CY7B162 CY7B162â 15LMB 28-Pin 7B161 8-A-00014-E A10C CY7B162-15DMB

    Untitled

    Abstract: No abstract text available
    Text: CY7B161 CY7B162 n Y p p p c q Features Functional D escription • Ultra high speed T he CY7B161 and CY 7B162 are highperform ance B iC M O S static R A M s orga­ nized as 16,384 by 4 bits w ith separate I/O . Easy m em ory expansion is provided by ac­ tive LO W chip en ab les Cl'-i, CF-2 and


    OCR Scan     		PDF CY7B161 CY7B162 7B162 AWE1151 7H161 8-A-00014-D

    CY7B161-12PC

    Abstract: b1615 B1616
    Text: PRELIMINARY r ’V P P F Q O 16,384x4 Static RAM Separate I/O SEMICONDUCTOR Features Functional Description • High speed - 10 ns t* The CY7B161 and CY7B162 are high-performance BiCMOS static RAMs orga­ nized as 16,384 by 4 bits with separate I/O. These RAMs are developed by Aspen


    OCR Scan     		PDF CY7B161 CY7B162 7B161) 384x4 8-A-00014-A CY7B161-12PC b1615 B1616

    EL36

    Abstract: No abstract text available
    Text: CY7B161 CY7B162 CYPRESS SEMICONDUCTOR 16K x 4 Static RAM Separate I/O Features Functional Description • Ultra high speed — 8 ns tAA • Low active power — 700 mW • Low standby power — 250 mW • Transparent write 7B161 • BiCMOS for optimum speed/power


    OCR Scan     		PDF CY7B161 CY7B162 7B161) 7B161 8-A-00014-E EL36

    CY7B161

    Abstract: No abstract text available
    Text: CY7B161 CY7B162 A? I CYPRESS SEMICONDUCTOR 16K x 4 Static RAM Separate I/O Features Functional Description • Ultra high speed — 8 ns Iaa • Low active power — 700 mW • Low standby power — 250 mW • Transparent write 7B161 • BiCMOS for optimum speed/power


    OCR Scan     		PDF CY7B161 CY7B162 7B162 7B161) 7B161 8-A-00014-E

    J61-10

    Abstract: No abstract text available
    Text: CY7B161 CY7B162 CYPRESS SEMICONDUCTOR 16,384 x 4 Static RAM Separate I/O Features Functional Description • T h e CY7B161 and C Y 7BI62 are high-per­ form ance BiCM OS static RAM s orga­ nized as 16,384 by 4 bits with separate I/O . T hese R A M s are developed by A spen


    OCR Scan     		PDF CY7B161 CY7B162 7B162 CY7B16ry CY7B162 8-A-00014-B J61-10

    toshiba 32k*8 sram

    Abstract: M5M23C100 M5M5265 seeq DQ2816A M5M23C400 MB832001 HITACHI 64k DRAM TC511000 KM41C464 TC51464
    Text: FUNCTION GUIDE MEMORY ICs 3. CROSS REFERENCE GUIDE 3.1 DRAM Density 64 K X 1 256K X 1 X4 1M X X 4M X X 3.2 Mode Org. 1 4 1 4 Samsung Toshiba Hitachi Fujitsu NEC MSM3764 KM4164 Page Okl F. Page KM41C256 TC51256 Nibble KM41C257 TC51257 HM51256 S. Column KM41C258


    OCR Scan     		PDF KM4164 KM41C256 KM41C257 KM41C258 KM41C464 KM41C466 KM41C1000 KM41C1001 KM41C1002 KM44C256 toshiba 32k*8 sram M5M23C100 M5M5265 seeq DQ2816A M5M23C400 MB832001 HITACHI 64k DRAM TC511000 TC51464