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    CY62167EV18LL Search Results

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    CY62167EV18LL Price and Stock

    Flip Electronics CY62167EV18LL-55BVI

    IC SRAM 16MBIT PARALLEL 48VFBGA
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    DigiKey CY62167EV18LL-55BVI Tray 4,136 50
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    Rochester Electronics LLC CY62167EV18LL-55BAXI

    IC SRAM 16MBIT PARALLEL 48VFBGA
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    DigiKey CY62167EV18LL-55BAXI Tray 819 26
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    Infineon Technologies AG CY62167EV18LL-55BVXI

    IC SRAM 16MBIT PARALLEL 48VFBGA
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    DigiKey CY62167EV18LL-55BVXI Tray 40 1
    • 1 $15.12
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    Avnet Americas CY62167EV18LL-55BVXI Tray 4 Weeks 32
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    CY62167EV18LL-55BVXI Tray 0 Weeks, 2 Days 66
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    Mouser Electronics CY62167EV18LL-55BVXI 2,244
    • 1 $14.68
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    Verical CY62167EV18LL-55BVXI 2,350 2
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    Newark CY62167EV18LL-55BVXI Bulk 1,891 1
    • 1 $17.48
    • 10 $16.33
    • 100 $14.3
    • 1000 $10.51
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    Rochester Electronics CY62167EV18LL-55BVXI 1,440 1
    • 1 $11.58
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    EBV Elektronik CY62167EV18LL-55BVXI 11 Weeks 2,400
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    Cypress Semiconductor CY62167EV18LL-55BVI

    NO WARRANTY
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    DigiKey CY62167EV18LL-55BVI Tray 7 1
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    Rochester Electronics CY62167EV18LL-55BVI 480 1
    • 1 $20.94
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    Flip Electronics CY62167EV18LL-55BVI 4,136
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    Infineon Technologies AG CY62167EV18LL-55BVI

    IC SRAM 16MBIT PARALLEL 48VFBGA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CY62167EV18LL-55BVI Tray 960
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    • 1000 $19.01698
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    Avnet Americas CY62167EV18LL-55BVI Tray 0 Weeks, 2 Days 42
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    • 100 $16.884
    • 1000 $15.9192
    • 10000 $14.9544
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    CY62167EV18LL-55BVI Tray 4 Weeks 18
    • 1 $20.94
    • 10 $20.94
    • 100 $18.75
    • 1000 $16.95
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    CY62167EV18LL-55BVI Tray 8 Weeks 960
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    • 1000 $24.412
    • 10000 $21.54
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    Mouser Electronics CY62167EV18LL-55BVI 351
    • 1 $26.17
    • 10 $24.37
    • 100 $19.04
    • 1000 $19
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    CY62167EV18LL Datasheets (11)

    Part ECAD Model Manufacturer Description Curated Type PDF
    CY62167EV18LL-55BAXI Cypress Semiconductor 16-Mbit (1M x 16) Static RAM Original PDF
    CY62167EV18LL-55BAXI Cypress Semiconductor 16 Mbit (1M x 16) Static RAM; Density: 16 Mb; Organization: 1Mb x 16; Vcc (V): 1.65 to 2.25 V; Original PDF
    CY62167EV18LL-55BVI Cypress Semiconductor 16 Mbit (1M x 16) Static RAM; Density: 16 Mb; Organization: 1Mb x 16; Vcc (V): 1.65 to 2.25 V; Original PDF
    CY62167EV18LL-55BVI Cypress Semiconductor Memory, Integrated Circuits (ICs), IC SRAM 16MBIT 55NS 48VFBGA Original PDF
    CY62167EV18LL-55BVIT Cypress Semiconductor 16 Mbit (1M x 16) Static RAM; Density: 16 Mb; Organization: 1Mb x 16; Vcc (V): 1.65 to 2.25 V; Original PDF
    CY62167EV18LL-55BVIT Cypress Semiconductor Memory, Integrated Circuits (ICs), IC SRAM 16MBIT 55NS 48VFBGA Original PDF
    CY62167EV18LL-55BVXI Cypress Semiconductor 16-Mbit (1M x 16) Static RAM Original PDF
    CY62167EV18LL-55BVXI Cypress Semiconductor MoBL 16-Mbit (1M x 16) Static RAM Original PDF
    CY62167EV18LL-55BVXI Cypress Semiconductor Memory, Integrated Circuits (ICs), IC SRAM 16MBIT 55NS 48VFBGA Original PDF
    CY62167EV18LL-55BVXIT Cypress Semiconductor 16 Mbit (1M x 16) Static RAM; Density: 16 Mb; Organization: 1Mb x 16; Vcc (V): 1.65 to 2.25 V; Original PDF
    CY62167EV18LL-55BVXIT Cypress Semiconductor Memory, Integrated Circuits (ICs), IC SRAM 16MBIT 55NS 48VFBGA Original PDF

    CY62167EV18LL Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    55BV

    Abstract: AN1064 CY62167EV18 CY62167EV18LL CY62167EV18LL-55BAXI CY62167EV18LL-55BVXI CY62167EV30LL
    Text: CY62167EV18 MoBL 16-Mbit 1M x 16 Static RAM Features by 99% when addresses are not toggling. Place the device into standby mode when deselected (CE1 HIGH or CE2 LOW or both BHE and BLE are HIGH). The input and output pins (IO0 through IO15) are placed in a high impedance state when: the device is


    Original
    PDF CY62167EV18 16-Mbit 55BV AN1064 CY62167EV18LL CY62167EV18LL-55BAXI CY62167EV18LL-55BVXI CY62167EV30LL

    Untitled

    Abstract: No abstract text available
    Text: CY62167EV18 MoBL PRELIMINARY 16-Mb 1M x 16 Static RAM Features input and output pins (IO0 through IO15) are placed in a high impedance state when: • Very high speed: 55 ns • Deselected (CE1HIGH or CE2 LOW) • Wide voltage range: 1.65V – 2.25V • Outputs are disabled (OE HIGH)


    Original
    PDF CY62167EV18 16-Mb 48-ball

    Untitled

    Abstract: No abstract text available
    Text: CY62167EV18 MoBL 16 Mbit 1M x 16 Static RAM Features by 99 percent when addresses are not toggling. Place the device into standby mode when deselected (CE1 HIGH or CE2 LOW or both BHE and BLE are HIGH). The input and output pins (I/O0 through I/O15) are placed in a high impedance state when: the


    Original
    PDF CY62167EV18 48-ball I/O15)

    Untitled

    Abstract: No abstract text available
    Text: CY62167EV18 MoBL 16 Mbit 1M x 16 Static RAM 16 Mbit (1M x 16) Static RAM Features automatic power down feature that reduces power consumption by 99 percent when addresses are not toggling. Place the device into standby mode when deselected (CE1 HIGH or CE2 LOW or


    Original
    PDF CY62167EV18 48-ball

    Untitled

    Abstract: No abstract text available
    Text: CY62167EV18 MoBL 16-Mbit 1M x 16 Static RAM Features consumption by 99% when addresses are not toggling. Place the device into standby mode when deselected (CE1 HIGH or CE2 LOW or both BHE and BLE are HIGH). The input and output pins (IO0 through IO15) are placed in a high impedance


    Original
    PDF CY62167EV18 16-Mbit 48-ball

    Untitled

    Abstract: No abstract text available
    Text: CY62167EV18 MoBL 16 Mbit 1M x 16 Static RAM 16 Mbit (1M x 16) Static RAM Features automatic power down feature that reduces power consumption by 99 percent when addresses are not toggling. Place the device into standby mode when deselected (CE1 HIGH or CE2 LOW or


    Original
    PDF CY62167EV18 48-ball

    AN1064

    Abstract: CY62167EV18 CY62167EV18LL CY62167EV30LL
    Text: CY62167EV18 MoBL 16 Mbit 1M x 16 Static RAM 16 Mbit (1M x 16) Static RAM Features by 99 percent when addresses are not toggling. Place the device into standby mode when deselected (CE1 HIGH or CE2 LOW or both BHE and BLE are HIGH). The input and output pins (I/O0


    Original
    PDF CY62167EV18 I/O15) AN1064 CY62167EV18LL CY62167EV30LL

    Untitled

    Abstract: No abstract text available
    Text: CY62167EV18 MoBL 16-Mbit 1 M x 16 Static RAM 16-Mbit (1 M × 16) Static RAM Features applications such as cellular telephones. The device also has an automatic power down feature that reduces power consumption by 99 percent when addresses are not toggling. Place the device


    Original
    PDF CY62167EV18 16-Mbit I/O15)

    Untitled

    Abstract: No abstract text available
    Text: CY62167EV18 MoBL 16 Mbit 1M x 16 Static RAM 16 Mbit (1M x 16) Static RAM Features by 99 percent when addresses are not toggling. Place the device into standby mode when deselected (CE1 HIGH or CE2 LOW or both BHE and BLE are HIGH). The input and output pins (I/O0


    Original
    PDF CY62167EV18 I/O15)

    AN1064

    Abstract: CY62167EV18 CY62167EV18LL CY62167EV18LL-55BAXI CY62167EV18LL-55BVXI
    Text: CY62167EV18 MoBL 16-Mbit 1M x 16 Static RAM Features by 99% when addresses are not toggling. Place the device into standby mode when deselected (CE1 HIGH or CE2 LOW or both BHE and BLE are HIGH). The input and output pins (IO0 through IO15) are placed in a high impedance state when: the device is


    Original
    PDF CY62167EV18 16-Mbit AN1064 CY62167EV18LL CY62167EV18LL-55BAXI CY62167EV18LL-55BVXI

    AN1064

    Abstract: CY62167EV18 CY62167EV18LL CY62167EV18LL-55BAXI CY62167EV30LL
    Text: CY62167EV18 MoBL 16 Mbit 1M x 16 Static RAM Features by 99 percent when addresses are not toggling. Place the device into standby mode when deselected (CE1 HIGH or CE2 LOW or both BHE and BLE are HIGH). The input and output pins (I/O0 through I/O15) are placed in a high impedance state when: the


    Original
    PDF CY62167EV18 I/O15) AN1064 CY62167EV18LL CY62167EV18LL-55BAXI CY62167EV30LL

    Untitled

    Abstract: No abstract text available
    Text: CY62167EV18 MoBL PRELIMINARY 16-Mb 1M x 16 Static RAM Features also has an automatic power-down feature that significantly reduces power consumption by 99% when addresses are not toggling. The device can also be put into standby mode when deselected (CE1 HIGH or CE2 LOW or both BHE and BLE are


    Original
    PDF CY62167EV18 16-Mb 48-ball I/O15)