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    CY62157DV30 Price and Stock

    Rochester Electronics LLC CY62157DV30LL-55BVXA

    IC SRAM 8MBIT PARALLEL 48VFBGA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CY62157DV30LL-55BVXA Tray 9,598 37
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    Rochester Electronics LLC CY62157DV30LL-70BVI

    IC SRAM 8MBIT PARALLEL 48VFBGA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CY62157DV30LL-70BVI Bulk 4,687 62
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    Rochester Electronics LLC CY62157DV30L-55ZSI

    IC SRAM 8MBIT PARALLEL 44TSOP II
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CY62157DV30L-55ZSI Bulk 1,151 83
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    Rochester Electronics LLC CY62157DV30L-55ZSXE

    IC SRAM 8MBIT PARALLEL 44TSOP II
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CY62157DV30L-55ZSXE Tube 558 73
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    Rochester Electronics LLC CY62157DV30L-70BVXI

    IC SRAM 8MBIT PARALLEL 48VFBGA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CY62157DV30L-70BVXI Bulk 531 91
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    Find more CY62157DV30 price and stock on Findchips.com

    CY62157DV30 Datasheets (41)

    Part ECAD Model Manufacturer Description Curated Type PDF
    CY62157DV30 Cypress Semiconductor 8-Mbit (512K x 16) MoBL(R) Static RAM Original PDF
    CY62157DV30L Cypress Semiconductor 8-Mbit (512K x 16) MoBL Static RAM Original PDF
    CY62157DV30L-45BVI Cypress Semiconductor 8-Mbit (512K x 16) MoBL Static RAM Original PDF
    CY62157DV30L-45ZSXI Cypress Semiconductor 8-Mbit (512K x 16) MoBL Static RAM Original PDF
    CY62157DV30L-45ZXI Cypress Semiconductor 8-Mbit (512K x 16) MoBL Static RAM Original PDF
    CY62157DV30L-55BVE Cypress Semiconductor 8-Mbit (512K x 16) MoBL(R) Static RAM Original PDF
    CY62157DV30L-55BVI Cypress Semiconductor Original PDF
    CY62157DV30L-55BVXE Cypress Semiconductor MoBL 8-Mbit (512K x 16) Static RAM Original PDF
    CY62157DV30L-55BVXET Cypress Semiconductor Memory, Integrated Circuits (ICs), IC SRAM 8MBIT 55NS 48VFBGA Original PDF
    CY62157DV30L-55BVXI Cypress Semiconductor 8-Mbit (512K x 16) MoBL Static RAM Original PDF
    CY62157DV30L-55ZSI Cypress Semiconductor Original PDF
    CY62157DV30L-55ZSXE Cypress Semiconductor 8-Mbit (512K x 16) MoBL(R) Static RAM Original PDF
    CY62157DV30L-55ZSXET Cypress Semiconductor Memory, Integrated Circuits (ICs), IC SRAM 8MBIT 55NS 44TSOP Original PDF
    CY62157DV30L-55ZSXI Cypress Semiconductor Original PDF
    CY62157DV30L-55ZXE Cypress Semiconductor 8-Mbit (512K x 16) MoBL(R) Static RAM Original PDF
    CY62157DV30L-55ZXI Cypress Semiconductor Original PDF
    CY62157DV30L-70BVI Cypress Semiconductor 8-Mbit (512K x 16) MoBL Static RAM Original PDF
    CY62157DV30L-70BVXI Cypress Semiconductor 8-Mbit (512K x 16) MoBL Static RAM Original PDF
    CY62157DV30L-70ZSI Cypress Semiconductor 8-Mbit (512K x 16) MoBL Static RAM Original PDF
    CY62157DV30L-70ZSXI Cypress Semiconductor 8-Mbit (512K x 16) MoBL Static RAM Original PDF

    CY62157DV30 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CY62157CV25

    Abstract: CY62157CV30 CY62157CV33 CY62157DV30 CY62157DV30L CY62157DV30LL
    Text: CY62157DV30 MoBL 8-Mbit 512K x 16 MoBL® Static RAM Functional Description[1] Features • Temperature Ranges The CY62157DV30 is a high-performance CMOS static RAM organized as 512K words by 16 bits. This device features advanced circuit design to provide ultra-low active current.


    Original     		PDF CY62157DV30 I/O15) 45-ns 70-ns CY62157CV25 CY62157CV30 CY62157CV33 CY62157DV30L CY62157DV30LL

    CY62157CV25

    Abstract: CY62157CV30 CY62157CV33 CY62157DV30 cy62157dv30l-55zxi
    Text: CY62157DV30 MoBL 8-Mbit 512K x 16 MoBL Static RAM Features portable applications such as cellular telephones.The device also has an automatic power-down feature that significantly reduces power consumption. The device can also be put into standby mode when deselected (CE1 HIGH or CE2 LOW or


    Original     		PDF CY62157DV30 I/O15) CY62157CV25, CY62157CV30, CY62157C. CY62157DV CY62157DV30 CY62157CV25 CY62157CV30 CY62157CV33 cy62157dv30l-55zxi

    Untitled

    Abstract: No abstract text available
    Text: CY62157DV30 MoBL 8-Mbit 512K x 16 MoBL® Static RAM Functional Description[1] Features • Temperature Ranges The CY62157DV30 is a high-performance CMOS static RAM organized as 512K words by 16 bits. This device features advanced circuit design to provide ultra-low active current.


    Original     		PDF CY62157DV30 CY62157CV25, CY62157CV30, CY62157CV33 48-ball 48-pin 44-pin 512Kodified 45-ns

    Untitled

    Abstract: No abstract text available
    Text: CY62157DV30 MoBL  8-Mbit 512K x 16 MoBL Static RAM This is ideal for providing More Battery Life (MoBL®) in portable applications such as cellular telephones.The device also has an automatic power-down feature that significantly reduces power consumption. The device can also be put into


    Original     		PDF CY62157DV30 CY62157CV25, CY62157CV30, CY62157CV33 48-ball 44-pin

    AN1064

    Abstract: CY62157CV25 CY62157CV30 CY62157CV33 CY62157DV30 CY62157DV30LL
    Text: CY62157DV30 MoBL 8-Mbit 512K x 16 MoBL® Static RAM Features portable applications such as cellular telephones.The device also has an automatic power-down feature that significantly reduces power consumption. The device can also be put into standby mode when deselected (CE1 HIGH or CE2 LOW or


    Original     		PDF CY62157DV30 I/O15) 48-Pin 45-ns 70-ns AN1064 CY62157CV25 CY62157CV30 CY62157CV33 CY62157DV30LL

    CY62157EV30

    Abstract: CY62157EV30LL AN1064 CY62157DV30 CY62157 220V DC TEMPERATURE CONTROL
    Text: CY62157EV30 MoBL 8-Mbit 512K x 16 Static RAM Features • TSOP I package configurable as 512K x 16 or as 1M x 8 SRAM • High speed: 45 ns • Wide voltage range: 2.20V–3.60V • Pin compatible with CY62157DV30 • Ultra low standby power — Typical Standby current: 2 µA


    Original     		PDF CY62157EV30 CY62157DV30 48-ball 44-pin 48-pin CY62157EV30LL AN1064 CY62157DV30 CY62157 220V DC TEMPERATURE CONTROL

    CY62157EV30 MoBL

    Abstract: CY62157EV30LL-45ZSXI CY62157 AN1064 CY62157DV30 CY62157EV30 CY62157EV30LL DSA0025657
    Text: CY62157EV30 MoBL 8-Mbit 512K x 16 Static RAM Features • TSOP I package configurable as 512K x 16 or as 1M x 8 SRAM • High speed: 45 ns • Wide voltage range: 2.20V–3.60V • Pin compatible with CY62157DV30 • Ultra low standby power — Typical Standby current: 2 µA


    Original     		PDF CY62157EV30 CY62157DV30 48-ball 44-pin 48-pin CY62157EV30 MoBL CY62157EV30LL-45ZSXI CY62157 AN1064 CY62157DV30 CY62157EV30LL DSA0025657

    CY62157DV30LL

    Abstract: CY62157CV25 CY62157CV30 CY62157CV33 CY62157DV30 CY62157DV30L
    Text: CY62157DV30 MoBL 8-Mbit 512K x 16 MoBL Static RAM Functional Description[1] Features • Temperature Ranges — Industrial: –40°C to 85°C The CY62157DV30 is a high-performance CMOS static RAM organized as 512K words by 16 bits. This device features


    Original     		PDF CY62157DV30 CY62157DV30 I/O15) C3115 CY62157DV 45-ns 70-ns CY62157DV30LL CY62157CV25 CY62157CV30 CY62157CV33 CY62157DV30L

    CY62157

    Abstract: CY62157DV30LL-45ZSXI CY62157DV30LL-45BVI
    Text: CY62157DV30 MoBL 8-Mbit 512K x 16 MoBL® Static RAM Functional Description[1] Features •Temperature Ranges — Industrial: –40°C to 85°C The CY62157DV30 is a high-performance CMOS static RAM organized as 512K words by 16 bits. This device features


    Original     		PDF CY62157DV30 CY62157CV25, CY62157CV30, CY62157CV33 48-ball 48-pin 44-pin CY62157DV CY62157 CY62157DV30LL-45ZSXI CY62157DV30LL-45BVI

    CY62157CV25

    Abstract: CY62157CV30 CY62157CV33 CY62157DV30 CY62157DV30L CY62157DV30LL
    Text: CY62157DV30 MoBL 8-Mbit 512K x 16 MoBL® Static RAM Functional Description[1] Features • Temperature Ranges The CY62157DV30 is a high-performance CMOS static RAM organized as 512K words by 16 bits. This device features advanced circuit design to provide ultra-low active current.


    Original     		PDF CY62157DV30 I/O15) 45-ns 70-ns CY62157CV25 CY62157CV30 CY62157CV33 CY62157DV30L CY62157DV30LL

    CY62157EV30LL-45BVI

    Abstract: CY62157EV
    Text: CY62157EV30 MoBL 8-Mbit 512K x 16 Static RAM Features • TSOP I package configurable as 512K x 16 or as 1M x 8 SRAM • Very high speed: 45 ns • Wide voltage range: 2.20V–3.60V • Pin-compatible with CY62157DV30 • Ultra-low standby power — Typical Standby current: 2 µA


    Original     		PDF CY62157EV30 CY62157DV30 48-ball 48-pin 44-pin CY62157EV30LL-45BVI CY62157EV

    Untitled

    Abstract: No abstract text available
    Text: THIS SPEC IS OBSOLETE Spec No: 38-05392 Spec Title: CY62157DV30 MOBL R 8-MBIT (512K X 16) MOBL(R) STATIC RAM Sunset Owner: Ramesh Raghavan (rame) Replaced by: NONE CY62157DV30 MoBL  8-Mbit (512K x 16) MoBL Static RAM This is ideal for providing More Battery Life (MoBL®) in


    Original     		PDF CY62157DV30 CY62157CV25, CY62157CV30, CY62157CV33

    CY62157EV30LL-45BVXI

    Abstract: TSOP 48 thermal resistance
    Text: CY62157EV30 MoBL 8-Mbit 512 K x 16 Static RAM 8-Mbit (512 K × 16) Static RAM Features Functional Description • Thin small outline package (TSOP) I package configurable as 512 K × 16 or 1 M × 8 static RAM (SRAM) ■ High speed: 45 ns ■ Temperature ranges


    Original     		PDF CY62157EV30 I/O15) CY62157EV30LL-45BVXI TSOP 48 thermal resistance

    Untitled

    Abstract: No abstract text available
    Text: THIS SPEC IS OBSOLETE Spec No: 38-05391 Spec Title: CY62158DV30 MoBL, 8-Mbit 1024K x 8 MoBL Static RAM Sunset Owner: Anuj Chakrapani (AJU) Replaced by: None CY62158DV30 MoBL 8-Mbit (1024K x 8) MoBL® Static RAM This is ideal for providing More Battery Life (MoBL®) in


    Original     		PDF CY62158DV30 1024K CY62158DV30 CY62158DV

    AN1064

    Abstract: CY62157DV30 CY62157EV30
    Text: CY62157EV30 MoBL 8 Mbit 512K x 16 Static RAM Features Functional Description • Thin small outline package (TSOP) I package configurable as 512K x 16 or 1M x 8 static RAM (SRAM) ■ High speed: 45 ns ■ Temperature ranges ❐ Industrial: –40°C to +85°C


    Original     		PDF CY62157EV30 CY62157DV30 AN1064 CY62157DV30

    AN1064

    Abstract: CY62157DV30 CY62157EV30 CY62157EV30LL-55ZXE CY62157EV30Ll-45zxa
    Text: CY62157EV30 MoBL 8 Mbit 512K x 16 Static RAM Features • TSOP I Package Configurable as 512K x 16 or 1M x 8 SRAM ■ High Speed: 45 ns ■ Temperature Ranges ❐ Industrial: –40°C to +85°C ❐ Automotive-A: –40°C to +85°C ❐ Automotive-E: –40°C to +125°C


    Original     		PDF CY62157EV30 CY62157DV30 48-Ball 44-Pin AN1064 CY62157DV30 CY62157EV30LL-55ZXE CY62157EV30Ll-45zxa

    TC554161A

    Abstract: HY62WT08081E K6X8008C2B CY62148E r1lv0416 K6F1616 k6t0808c1d BH616UV4010 BH616UV8010 BH62UV4000
    Text: BSI Ultra Low Power SRAM Cross Reference Table BH-Series Density Config. x8 Part No. BH62UV4000 Speed ns 55 Iccsb1 Typical (at 25C) 2V 3V 5V Icc 3V 1MHz fmax 5V fmax 2uA 1.5mA N.A. 2uA N.A 9mA Voltage (V) Renesas Hynix BH616UV4010 55 2uA 2uA N.A 1.5mA 9mA


    Original     		PDF BH62UV4000 BH616UV4010 BH62UV8000 BH616UV8010 BH62UV1600 BH616UV1610 TC55V4000 TC55VEM208ASTN T16LV8017 K6X8008T2B TC554161A HY62WT08081E K6X8008C2B CY62148E r1lv0416 K6F1616 k6t0808c1d BH616UV4010 BH616UV8010 BH62UV4000

    HM628100

    Abstract: HM6216514 M5M5256D-L K6X0808C1D BS616LV1010 BS616LV2016 BS616LV2019 BS616UV2019 K6X8008C2B BS62LV2006
    Text: BSI Low Power SRAM Cross Reference Table Nov-30-2008 Density Configuration Part No. Speed ns Iccsb1 Typical (at 25C) 2V 3V 5V Icc 3V 1MHz fmax 5V fmax Voltage (V) Samsung Cypress 2.4~5.5 x8 BS62LV256 70 0.05uA 0.1uA 0.4uA 1mA 20mA 35mA BS62LV1027 55/70 0.1uA


    Original     		PDF Nov-30-2008 BS62LV256 M5M5256D-G K6X0808T1D CY62256V IS62LV256AL BS62LV1027 BS616LV1010 CY62256 M5M5256D-L HM628100 HM6216514 M5M5256D-L K6X0808C1D BS616LV1010 BS616LV2016 BS616LV2019 BS616UV2019 K6X8008C2B BS62LV2006

    Untitled

    Abstract: No abstract text available
    Text: CY62157EV30 MoBL 8-Mbit 512 K x 16 Static RAM 8-Mbit (512 K × 16) Static RAM Features Functional Description • Thin small outline package (TSOP) I package configurable as 512 K × 16 or 1 M × 8 static RAM (SRAM) ■ High speed: 45 ns ■ Temperature ranges


    Original     		PDF CY62157EV30 CY62157DV30

    Untitled

    Abstract: No abstract text available
    Text: CY62157EV30 MoBL 8-Mbit 512 K x 16 Static RAM 8-Mbit (512 K × 16) Static RAM Features Functional Description • Thin small outline package (TSOP) I package configurable as 512 K × 16 or 1 M × 8 static RAM (SRAM) ■ High speed: 45 ns ■ Temperature ranges


    Original     		PDF CY62157EV30 CY62157DV30

    TC55VEM416AXBN

    Abstract: K6F8016U6B HY62WT08081E K6X4008C1F BH-Series CY62147CV30 Hynix Cross Reference samsung k6x1008c2d CY62148E TC55VEM216ABXN
    Text: BSI Ultra Low Power SRAM Cross Reference Table BH-Series Density Config. x8 Part No. BH62UV4000 Speed ns 55 Iccsb1 Typical (at 25C) 2V 3V 5V Icc 3V 1MHz fmax 5V fmax 2uA 1.5mA N.A. 2uA N.A 9mA Voltage (V) Renesas Hynix BH616UV4010 55 2uA 2uA N.A 1.5mA 9mA


    Original     		PDF BH62UV4000 BH616UV4010 BH62UV8000 BH616UV8010 BH62UV1600 BH616UV1610 TC55V4000 TC55VEM208ASTN T16LV8017 K6X8008T2B TC55VEM416AXBN K6F8016U6B HY62WT08081E K6X4008C1F BH-Series CY62147CV30 Hynix Cross Reference samsung k6x1008c2d CY62148E TC55VEM216ABXN

    Untitled

    Abstract: No abstract text available
    Text: CY62157EV30 MoBL 8-Mbit 512 K x 16 Static RAM 8-Mbit (512 K × 16) Static RAM Features Functional Description • Thin small outline package (TSOP) I package configurable as 512 K × 16 or 1 M × 8 static RAM (SRAM) ■ High speed: 45 ns ■ Temperature ranges


    Original     		PDF CY62157EV30 CY62157DV30

    KEY-YM061

    Abstract: key ym061 smd diode U12 SMD R25 tsop44 footprint smd code Y1 u12 smd code 636-1027 BNX002 PCB footprint MKDS1.5
    Text: PROJECT NAME:STEVAL-IPE005V1 23/08/2007 BILL OF MATERIALS Item Quantity Reference Part Footprint Manufacturer CONNECTOR EDGE 20 DC-IN9V DC-IN9V 100n 16V Through-hole Through-hole Through-hole SMD 0805 TYCO dc power plug PHOENIX CONTACT ANY 10n 16V 4.7u 10V-Electrolytic


    Original     		PDF STEVAL-IPE005V1 BAS70-04/SOT 1N4001 STM811TM16-SOT143-4 CY62157DV30-TSOP44 CON10 BNX002 BC847B BC807-25 KEY-YM061 key ym061 smd diode U12 SMD R25 tsop44 footprint smd code Y1 u12 smd code 636-1027 BNX002 PCB footprint MKDS1.5

    CY62157DV30

    Abstract: CY62158DV30 CY62158DV30L CY62158DV30L-45BVI CY62158DV30LL TSOP 48 thermal resistance junction to case
    Text: CY62158DV30 MoBL 8-Mbit 1024K x 8 MoBL Static RAM This is ideal for providing More Battery Life (MoBL) in portable applications such as cellular telephones. The device also has an automatic power-down feature that significantly reduces power consumption. The device can be put into


    Original     		PDF CY62158DV30 1024K CY62158DV CY62158DV30 CY62157DV30 CY62158DV30L CY62158DV30L-45BVI CY62158DV30LL TSOP 48 thermal resistance junction to case