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    CY62157EV Price and Stock

    Flip Electronics CY62157EV18LL-55BVXIT

    IC SRAM 8MBIT PARALLEL 48VFBGA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CY62157EV18LL-55BVXIT Reel 52,000 100
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    Flip Electronics CY62157EV30LL-45BVXIT

    SRAM - ASYNCHRONOUS MEMORY IC 8M
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CY62157EV30LL-45BVXIT Reel 32,000 100
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    Flip Electronics CY62157EV30LL-45BVXA

    IC SRAM 8MBIT PARALLEL 48VFBGA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CY62157EV30LL-45BVXA Reel 24,222 50
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    Flip Electronics CY62157EV30LL-45ZSXA

    IC SRAM 8MBIT PARALLEL 44TSOP II
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CY62157EV30LL-45ZSXA Tray 22,184 50
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    Flip Electronics CY62157EV30LL-45ZXI

    IC SRAM 8MBIT PARALLEL 48TSOP I
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CY62157EV30LL-45ZXI Tray 13,308 100
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    • 100 $8.89
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    Find more CY62157EV price and stock on Findchips.com

    CY62157EV Datasheets (40)

    Part ECAD Model Manufacturer Description Curated Type PDF
    CY62157EV18 Cypress Semiconductor 8-Mbit (512K x 16) Static RAM Original PDF
    CY62157EV18LL-55BVXI Cypress Semiconductor 8-Mbit (512K x 16) Static RAM Original PDF
    CY62157EV18LL-55BVXIT Cypress Semiconductor 8-Mbit (512K x 16) Static RAM; Density: 8 Mb; Organization: 512Kb x 16; Vcc (V): 1.65 to 2.25 V; Original PDF
    CY62157EV30 Cypress Semiconductor 8-Mbit (512K x 16) Static RAM Original PDF
    CY62157EV30LL-45BVI Cypress Semiconductor 8-Mbit (512K x 16) Static RAM Original PDF
    CY62157EV30LL-45BVI Cypress Semiconductor Memory, Integrated Circuits (ICs), IC SRAM 8MBIT 45NS 48VFBGA Original PDF
    CY62157EV30LL-45BVIT Cypress Semiconductor 8-Mbit (512K x 16) Static RAM; Density: 8 Mb; Organization: 512Kb x 16; Vcc (V): 2.20 to 3.60 V; Original PDF
    CY62157EV30LL-45BVIT Cypress Semiconductor Memory, Integrated Circuits (ICs), IC SRAM 8MBIT 45NS 48VFBGA Original PDF
    CY62157EV30LL-45BVXA Cypress Semiconductor 8-Mbit (512K x 16) Static RAM; Density: 8 Mb; Organization: 512Kb x 16; Vcc (V): 2.20 to 3.60 V; Original PDF
    CY62157EV30LL-45BVXA Cypress Semiconductor Memory, Integrated Circuits (ICs), IC SRAM 8MBIT 45NS 48VFBGA Original PDF
    CY62157EV30LL-45BVXAT Cypress Semiconductor 8-Mbit (512K x 16) Static RAM; Density: 8 Mb; Organization: 512Kb x 16; Vcc (V): 2.20 to 3.60 V; Original PDF
    CY62157EV30LL-45BVXAT Cypress Semiconductor Memory, Integrated Circuits (ICs), IC SRAM 8MBIT 45NS 48VFBGA Original PDF
    CY62157EV30LL-45BVXI Cypress Semiconductor 8-Mbit (512K x 16) Static RAM Original PDF
    CY62157EV30LL-45BVXI Cypress Semiconductor MoBL 8-Mbit (512K x 16) Static RAM Original PDF
    CY62157EV30LL-45BVXI Cypress Semiconductor Memory, Integrated Circuits (ICs), IC SRAM 8MBIT 45NS 48VFBGA Original PDF
    CY62157EV30LL-45BVXIT Cypress Semiconductor 8-Mbit (512K x 16) Static RAM; Density: 8 Mb; Organization: 512Kb x 16; Vcc (V): 2.20 to 3.60 V; Original PDF
    CY62157EV30LL-45BVXIT Cypress Semiconductor Memory, Integrated Circuits (ICs), IC SRAM 8MBIT 45NS 48VFBGA Original PDF
    CY62157EV30LL-45ZSXA Cypress Semiconductor 8-Mbit (512K x 16) Static RAM; Density: 8 Mb; Organization: 512Kb x 16; Vcc (V): 2.20 to 3.60 V; Original PDF
    CY62157EV30LL-45ZSXA Cypress Semiconductor Memory, Integrated Circuits (ICs), IC SRAM 8MBIT 45NS 44TSOP Original PDF
    CY62157EV30LL-45ZSXAT Cypress Semiconductor 8-Mbit (512K x 16) Static RAM; Density: 8 Mb; Organization: 512Kb x 16; Vcc (V): 2.20 to 3.60 V; Original PDF

    CY62157EV Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: CY62157EV18 MoBL 8-Mbit 512K x 16 Static RAM 8-bit (512K x 16) Static RAM Features • Very high speed: 55 ns ■ Wide voltage range: 1.65 V–2.25 V ■ Pin compatible with CY62157DV18 and CY62157DV20 ■ Ultra low standby power ❐ Typical Standby current: 2 A


    Original     		PDF CY62157EV18 CY62157DV18 CY62157DV20 48-ball

    CY62157EV30LL-45BVXI

    Abstract: TSOP 48 thermal resistance
    Text: CY62157EV30 MoBL 8-Mbit 512 K x 16 Static RAM 8-Mbit (512 K × 16) Static RAM Features Functional Description • Thin small outline package (TSOP) I package configurable as 512 K × 16 or 1 M × 8 static RAM (SRAM) ■ High speed: 45 ns ■ Temperature ranges


    Original     		PDF CY62157EV30 I/O15) CY62157EV30LL-45BVXI TSOP 48 thermal resistance

    Untitled

    Abstract: No abstract text available
    Text: CY62157EV18 MoBL 8-Mbit 512K x 16 Static RAM 8-bit (512K x 16) Static RAM Features consumption when addresses are not toggling. The device can also be put into standby mode when deselected (CE1 HIGH or CE2 LOW or both BHE and BLE are HIGH). The input and output


    Original     		PDF CY62157EV18 CY62157DV18 CY62157DV20 48-ball I/O15)

    Untitled

    Abstract: No abstract text available
    Text: CY62157EV30 MoBL 8-Mbit 512K x 16 Static RAM Features • TSOP I package configurable as 512K x 16 or as 1M x 8 SRAM • High speed: 45 ns reduces power consumption when addresses are not toggling. Place the device into standby mode when deselected (CE1


    Original     		PDF CY62157EV30 CY62157DV30 48-ball 44-pin 48-pin

    AN1064

    Abstract: CY62157DV30 CY62157EV30
    Text: CY62157EV30 MoBL 8 Mbit 512K x 16 Static RAM Features Functional Description • Thin small outline package (TSOP) I package configurable as 512K x 16 or 1M x 8 static RAM (SRAM) ■ High speed: 45 ns ■ Temperature ranges ❐ Industrial: –40°C to +85°C


    Original     		PDF CY62157EV30 CY62157DV30 AN1064 CY62157DV30

    Untitled

    Abstract: No abstract text available
    Text: CY62157EV18 MoBL 8-Mbit 512K x 16 Static RAM 8-bit (512K x 16) Static RAM Features • Very high speed: 55 ns ■ Wide voltage range: 1.65 V–2.25 V ■ Pin compatible with CY62157DV18 and CY62157DV20 ■ Ultra low standby power ❐ Typical Standby current: 2 A


    Original     		PDF CY62157EV18 CY62157DV18 CY62157DV20 I/O15)

    Untitled

    Abstract: No abstract text available
    Text: CY62157EV18 MoBL 8-Mbit 512K x 16 Static RAM Features portable applications such as cellular telephones. The device also has an automatic power-down feature that significantly reduces power consumption when addresses are not toggling. The device can also be put into standby mode when


    Original     		PDF CY62157EV18 CY62157DV18 CY62157DV20 48-ball CE11MHz.

    CY62157DV18

    Abstract: CY62157DV20 CY62157EV18
    Text: CY62157EV18 MoBL 8-Mbit 512K x 16 Static RAM Features deselected (CE1 HIGH or CE2 LOW or both BHE and BLE are HIGH). The input and output pins (IO0 through IO15) are placed in a high impedance state when: • Very high speed: 55 ns • Wide voltage range: 1.65V–2.25V


    Original     		PDF CY62157EV18 CY62157DV18 CY62157DV20 CY62157DV20

    AN1064

    Abstract: CY62157DV30 CY62157EV30 CY62157EV30LL-55ZXE CY62157EV30Ll-45zxa
    Text: CY62157EV30 MoBL 8 Mbit 512K x 16 Static RAM Features • TSOP I Package Configurable as 512K x 16 or 1M x 8 SRAM ■ High Speed: 45 ns ■ Temperature Ranges ❐ Industrial: –40°C to +85°C ❐ Automotive-A: –40°C to +85°C ❐ Automotive-E: –40°C to +125°C


    Original     		PDF CY62157EV30 CY62157DV30 48-Ball 44-Pin AN1064 CY62157DV30 CY62157EV30LL-55ZXE CY62157EV30Ll-45zxa

    Untitled

    Abstract: No abstract text available
    Text: CY62157EV18 MoBL 8-Mbit 512 K x 16 Static RAM 8-bit (512K x 16) Static RAM Features • Very high speed: 55 ns ■ Wide voltage range: 1.65 V–2.25 V ■ Pin compatible with CY62157DV18 and CY62157DV20 ■ Ultra low standby power ❐ Typical Standby current: 2 A


    Original     		PDF CY62157EV18 CY62157DV18 CY62157DV20 I/O15)

    Untitled

    Abstract: No abstract text available
    Text: CY62157EV30 MoBL 8-Mbit 512 K x 16 Static RAM 8-Mbit (512 K × 16) Static RAM Features Functional Description • Thin small outline package (TSOP) I package configurable as 512 K × 16 or 1 M × 8 static RAM (SRAM) ■ High speed: 45 ns ■ Temperature ranges


    Original     		PDF CY62157EV30 CY62157DV30

    Untitled

    Abstract: No abstract text available
    Text: CY62157EV30 MoBL 8-Mbit 512 K x 16 Static RAM 8-Mbit (512 K × 16) Static RAM Features Functional Description • Thin small outline package (TSOP) I package configurable as 512 K × 16 or 1 M × 8 static RAM (SRAM) ■ High speed: 45 ns ■ Temperature ranges


    Original     		PDF CY62157EV30 CY62157DV30

    Untitled

    Abstract: No abstract text available
    Text: CY62157EV18 MoBL 8-Mbit 512K x 16 Static RAM Features deselected (CE1 HIGH or CE2 LOW or both BHE and BLE are HIGH). The input and output pins (IO0 through IO15) are • Very high speed: 55 ns placed in a high impedance state when: • Wide voltage range: 1.65V–2.25V


    Original     		PDF CY62157EV18 CY62157DV18 CY62157DV20 48-ball

    Untitled

    Abstract: No abstract text available
    Text: CY62157EV30 MoBL 8-Mbit 512 K x 16 Static RAM 8-Mbit (512 K × 16) Static RAM Features Functional Description • Thin small outline package (TSOP) I package configurable as 512 K × 16 or 1 M × 8 static RAM (SRAM) ■ High speed: 45 ns ■ Temperature ranges


    Original     		PDF CY62157EV30 CY62157DV30

    Untitled

    Abstract: No abstract text available
    Text: CY62157EV30 MoBL 8-Mbit 512 K x 16 Static RAM 8-Mbit (512 K × 16) Static RAM Features Functional Description • Thin small outline package (TSOP) I package configurable as 512 K × 16 or 1 M × 8 static RAM (SRAM) ■ High speed: 45 ns ■ Temperature ranges


    Original     		PDF CY62157EV30 I/O15)

    CY62157EV30

    Abstract: CY62157EV30LL AN1064 CY62157DV30 CY62157 220V DC TEMPERATURE CONTROL
    Text: CY62157EV30 MoBL 8-Mbit 512K x 16 Static RAM Features • TSOP I package configurable as 512K x 16 or as 1M x 8 SRAM • High speed: 45 ns • Wide voltage range: 2.20V–3.60V • Pin compatible with CY62157DV30 • Ultra low standby power — Typical Standby current: 2 µA


    Original     		PDF CY62157EV30 CY62157DV30 48-ball 44-pin 48-pin CY62157EV30LL AN1064 CY62157DV30 CY62157 220V DC TEMPERATURE CONTROL

    JTAG CONNECTOR

    Abstract: ADM3202ARUZ Bluetooth Transceiver Module RS232 JTAG MODULE SPI XC3S1000-4FGG456C 12V2A xcf04svog20c ppi to rs232 AD1938 BLACKFIN JTAG
    Text: ADP1864AUJZ-R7 5V0 ADP2107ACPZ-R7 DC/DC Down 1.2V@2A FPGA DC/DC Down 5.0V@2A 1V2 ConnectBlue WLAN Module ADP1715-2.5 ADP1864AUJZ-R7 12V Power Jack 3V3 2V5 LDOs Audio Camera Stereo-Out Vcam1 On-Board USB-OTG CM—BF527 Only Vcam2 AD1938/AS1936 CY62157EV30LL45BVXI


    Original     		PDF ADP1864AUJZ-R7 ADP2107ACPZ-R7 ADP1715-2 500mA CM--BF527 AD1938/AS1936 FT2232D CM-BF527 CM-BF537E) JTAG CONNECTOR ADM3202ARUZ Bluetooth Transceiver Module RS232 JTAG MODULE SPI XC3S1000-4FGG456C 12V2A xcf04svog20c ppi to rs232 AD1938 BLACKFIN JTAG

    CY62157EV30 MoBL

    Abstract: CY62157EV30LL-45ZSXI CY62157 AN1064 CY62157DV30 CY62157EV30 CY62157EV30LL DSA0025657
    Text: CY62157EV30 MoBL 8-Mbit 512K x 16 Static RAM Features • TSOP I package configurable as 512K x 16 or as 1M x 8 SRAM • High speed: 45 ns • Wide voltage range: 2.20V–3.60V • Pin compatible with CY62157DV30 • Ultra low standby power — Typical Standby current: 2 µA


    Original     		PDF CY62157EV30 CY62157DV30 48-ball 44-pin 48-pin CY62157EV30 MoBL CY62157EV30LL-45ZSXI CY62157 AN1064 CY62157DV30 CY62157EV30LL DSA0025657

    CY62157

    Abstract: CY62157EV30LL-45BVXI
    Text: CY62157EV30 MoBL 8-Mbit 512K x 16 Static RAM Features portable applications such as cellular telephones. The device also has an automatic power-down feature that significantly reduces power consumption when addresses are not toggling. The device can also be put into standby mode when


    Original     		PDF CY62157EV30 CY62157DV30 48-ball 48-pin 44-pin CY62157 CY62157EV30LL-45BVXI

    CY62157DV18

    Abstract: CY62157DV20 CY62157EV18
    Text: CY62157EV18 MoBL 8-Mbit 512K x 16 Static RAM 8-bit (512K x 16) Static RAM Features • Very high speed: 55 ns ■ Wide voltage range: 1.65 V–2.25 V ■ Pin compatible with CY62157DV18 and CY62157DV20 ■ Ultra low standby power ❐ Typical Standby current: 2 A


    Original     		PDF CY62157EV18 CY62157DV18 CY62157DV20 I/O15) CY62157DV20

    CY62157DV18

    Abstract: CY62157DV20 CY62157EV18
    Text: CY62157EV18 MoBL 8-Mbit 512K x 16 Static RAM Features deselected (CE1 HIGH or CE2 LOW or both BHE and BLE are HIGH). The input and output pins (IO0 through IO15) are placed in a high impedance state when: • Very high speed: 55 ns • Wide voltage range: 1.65V–2.25V


    Original     		PDF CY62157EV18 CY62157DV18 CY62157DV20 CY62157DV20

    CY62157EV30LL-45BVI

    Abstract: CY62157EV
    Text: CY62157EV30 MoBL 8-Mbit 512K x 16 Static RAM Features • TSOP I package configurable as 512K x 16 or as 1M x 8 SRAM • Very high speed: 45 ns • Wide voltage range: 2.20V–3.60V • Pin-compatible with CY62157DV30 • Ultra-low standby power — Typical Standby current: 2 µA


    Original     		PDF CY62157EV30 CY62157DV30 48-ball 48-pin 44-pin CY62157EV30LL-45BVI CY62157EV

    7688 memory chip

    Abstract: CY62157EV30 CY62158DV30 CY62158EV30LL CY62158EV30LL-45BVXI CY62158EV30LL-45ZSXI CY62158E CY62157
    Text: CY62158EV30 MoBL 8-Mbit 1024K x 8 Static RAM Functional Description [2] Features • Very high speed: 45 ns The CY62158EV30 is a high performance CMOS static RAM organized as 1024K words by 8 bits. This device features advanced circuit design to provide ultra low active current.


    Original     		PDF CY62158EV30 1024K CY62157EV30 7688 memory chip CY62158DV30 CY62158EV30LL CY62158EV30LL-45BVXI CY62158EV30LL-45ZSXI CY62158E CY62157

    CY62157EV

    Abstract: No abstract text available
    Text: CY62158EV30 MoBL 8-Mbit 1024K x 8 Static RAM Functional Description[2] Features • Very high speed: 45 ns The CY62158EV30 is a high-performance CMOS static RAM organized as 1024K words by 8 bits. This device features advanced circuit design to provide ultra-low active current.


    Original     		PDF CY62158EV30 1024K CY62158DV30 48-ball 44-pin 48-pin CY62157EV30 CY62157EV