Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    CY62148V Search Results

    SF Impression Pixel

    CY62148V Price and Stock

    Rochester Electronics LLC CY62148VNLL-70ZSXI

    IC SRAM 4MBIT PARALLEL 32TSOP II
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CY62148VNLL-70ZSXI Tube 328 19
    • 1 -
    • 10 -
    • 100 $15.9
    • 1000 $15.9
    • 10000 $15.9
    		Buy Now

    Rochester Electronics LLC CY62148VNLL70ZSXI

    IC SRAM 4MBIT PARALLEL 32TSOP II
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CY62148VNLL70ZSXI Bulk 117 19
    • 1 -
    • 10 -
    • 100 $15.9
    • 1000 $15.9
    • 10000 $15.9
    		Buy Now

    Infineon Technologies AG CY62148VNLL-70SXI

    IC SRAM 4MBIT PARALLEL 32SOIC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CY62148VNLL-70SXI Tube 1
    • 1 $6.82
    • 10 $6.82
    • 100 $6.82
    • 1000 $6.82
    • 10000 $6.82
    		Buy Now

    Rochester Electronics LLC CY62148VLL-70ZXIT

    IC SRAM 4MBIT PARALLEL 32TSOP II
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CY62148VLL-70ZXIT Bulk 111
    • 1 -
    • 10 -
    • 100 -
    • 1000 $2.71
    • 10000 $2.71
    		Buy Now

    Rochester Electronics LLC CY62148VNLL-70SXI

    IC SRAM 4MBIT PARALLEL 32SOIC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CY62148VNLL-70SXI Tube 19
    • 1 -
    • 10 -
    • 100 $15.9
    • 1000 $15.9
    • 10000 $15.9
    		Buy Now
    Find more CY62148V price and stock on Findchips.com

    CY62148V Datasheets (41)

    Part ECAD Model Manufacturer Description Curated Type PDF
    CY62148V Cypress Semiconductor 512K x 8 Static RAM Original PDF
    CY62148V Cypress Semiconductor 512K x 8 MoBL Static RAM Original PDF
    CY62148V-55SC Cypress Semiconductor 512K x 8 static RAM, 55ns Original PDF
    CY62148V-55SC Cypress Semiconductor 512K x 8 Static RAM Scan PDF
    CY62148V-55ZC Cypress Semiconductor 512K x 8 static RAM, 55ns Original PDF
    CY62148V-55ZC Cypress Semiconductor 512K x 8 Static RAM Scan PDF
    CY62148V-70SC Cypress Semiconductor 512K x 8 Static RAM Original PDF
    CY62148V-70SC Cypress Semiconductor 512K x 8 static RAM, 70ns Original PDF
    CY62148V-70SC Cypress Semiconductor 512K x 8 Static RAM Scan PDF
    CY62148V-70SCT Cypress Semiconductor 512K x 8 Static RAM Original PDF
    CY62148V-70SI Cypress Semiconductor 512K x 8 static RAM, 70ns Original PDF
    CY62148V-70SI Cypress Semiconductor 512K x 8 Static RAM Scan PDF
    CY62148V-70ZC Cypress Semiconductor 512K x 8 static RAM, 70ns Original PDF
    CY62148V-70ZC Cypress Semiconductor 512K x 8 Static RAM Scan PDF
    CY62148V-70ZI Cypress Semiconductor 512K x 8 static RAM, 70ns Original PDF
    CY62148V-70ZI Cypress Semiconductor 512K x 8 Static RAM Scan PDF
    CY62148VL-55SC Cypress Semiconductor 512K x 8 static RAM, 55ns Original PDF
    CY62148VL-55SC Cypress Semiconductor 512K x 8 Static RAM Scan PDF
    CY62148VL-55ZC Cypress Semiconductor 512K x 8 static RAM, 55ns Original PDF
    CY62148VL-55ZC Cypress Semiconductor 512K x 8 Static RAM Scan PDF

    CY62148V Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CY62148VLL-70ZI

    Abstract: CY62148V CY62148VL-70SI CY62148VL-70ZI CY62148VLL-70BAI CY62148VLL-70SI CY62148VL-70BAI
    Text: MoBL ADVANCED INFORMATION CY62148V MoBL 512K x 8 MoBL Static RAM Writing to the device is accomplished by taking Chip Enable CE and Write Enable (WE) inputs LOW. Data on the eight I/O pins (I/O0 through I/O7) is then written into the location specified on the address pins (A 0 through A18).


    Original     		PDF CY62148V CY62148VLL-70ZI CY62148VL-70SI CY62148VL-70ZI CY62148VLL-70BAI CY62148VLL-70SI CY62148VL-70BAI

    Untitled

    Abstract: No abstract text available
    Text: THIS SPEC IS OBSOLETE Spec No: 001-55636 Spec Title: CY62148VN MOBL R , 4 MBIT (512K X 8) STATIC RAM Sunset Owner: Ramesh Raghavan (RAME) Replaced by: None CY62148VN MoBL 4 Mbit (512K x 8) Static RAM Features applications such as cellular telephones. The device also has an


    Original     		PDF CY62148VN

    Untitled

    Abstract: No abstract text available
    Text: CY62148VN MoBL 4 Mbit 512K x 8 Static RAM Features applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power consumption by 99 percent when addresses are not toggling. The device can be put into standby mode when deselected (CE


    Original     		PDF CY62148VN 32-Pin

    CY62148CV30

    Abstract: CY62148V CY62148VLL CY62148VLL-70SI CY62148VLL-70ZI ZS32
    Text: CY62148V MoBL 4M 512K x 8 Static RAM Features • • • • • • • Wide voltage range: 2.7V–3.6V Ultra low active power Low standby power TTL-compatible inputs and outputs Automatic power-down when deselected CMOS for optimum speed/power Package available in a 32 pin TSOPII and a 32-pin SOIC


    Original     		PDF CY62148V 32-pin CY62148CV30) CY62148CV30 CY62148VLL CY62148VLL-70SI CY62148VLL-70ZI ZS32

    CY62148V

    Abstract: No abstract text available
    Text: fax id: 1093 CY62148V PRELIMINARY 512K x 8 Static RAM Features an automatic power-down feature that reduces power consumption by more than 99% when deselected. • 2.7V−3.6V operation • CMOS for optimum speed/power • Low active power — 180 mW max.


    Original     		PDF CY62148V CY62148V

    AN1064

    Abstract: No abstract text available
    Text: CY62148VN MoBL 4 Mbit 512K x 8 Static RAM Features applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power consumption by 99 percent when addresses are not toggling. The device can be put into standby mode when deselected (CE


    Original     		PDF CY62148VN 32-Pin AN1064

    BA37

    Abstract: CY62148V CY62148VLL-70BAI CY62148VLL-70SI CY62148VLL-70ZI ZS32
    Text: MoBL CY62148V MoBL 512K x 8 MoBL Static RAM Features The device can be put into standby mode when deselected CE HIGH . • Low voltage range: — 2.7V–3.6V • Ultra low active power • Low standby power • TTL-compatible inputs and outputs • Automatic power-down when deselected


    Original     		PDF CY62148V BA37 CY62148VLL-70BAI CY62148VLL-70SI CY62148VLL-70ZI ZS32

    CY62148VLL-70ZI

    Abstract: CY62148VLL-70SI ZS32 BA37 CY62148V CY62148VLL-70BAI
    Text: MoBL CY62148V MoBL 512K x 8 MoBL Static RAM The device can be put into standby mode when deselected CE HIGH . Features • Low voltage range: — 2.7V–3.6V • Ultra low active power • Low standby power • TTL-compatible inputs and outputs • Automatic power-down when deselected


    Original     		PDF CY62148V CY62148VLL-70ZI CY62148VLL-70SI ZS32 BA37 CY62148VLL-70BAI

    CY62148CV30

    Abstract: CY62148V CY62148VLL CY62148VLL-70SI CY62148VLL-70ZI ZS32
    Text: CY62148V MoBL 4M 512K x 8 Static RAM Features • • • • • • • Wide voltage range: 2.7V–3.6V Ultra low active power Low standby power TTL-compatible inputs and outputs Automatic power-down when deselected CMOS for optimum speed/power Package available in a 32 pin TSOPII and a 32-pin SOIC


    Original     		PDF CY62148V 32-pin CY62148CV30) CY62148CV30 CY62148VLL CY62148VLL-70SI CY62148VLL-70ZI ZS32

    lh62256

    Abstract: 128k x8 SRAM TSOP upd431000-70 TC55257 Hitachi HM628512 EOL hm62v16512 CY7C1049 hm62256 K6R4004V1C UPD43256
    Text: Hitachi SRAM Cross-Reference Guide June 2001 256K Low Power Bytewide 32K x8 55ns, 70ns and 85ns standard speeds Basic Part # HM62256 K6T0808C1 CY62256 TC55257 uPD43256 W24257 GM76C256C LH62256 Hitachi * Samsung Cypress Toshiba NEC Winbond Hyundai Sharp Speed s


    Original     		PDF HM62256 K6T0808C1 CY62256 TC55257 uPD43256 W24257 GM76C256C LH62256 HM628128 K6T1008C2 lh62256 128k x8 SRAM TSOP upd431000-70 TC55257 Hitachi HM628512 EOL hm62v16512 CY7C1049 hm62256 K6R4004V1C

    ATPA

    Abstract: 7130SA100P 24l01 7C263/4-35C 7164S15Y cy9122-25 7133SA35J 7142sa55 7130sa55p cy2149-45c
    Text: Product Line Cross Reference CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS CY2147-35C CY7C147-35C CY7C147-45C CY7C147-35C CY91L22-35C CY7C122-35C CY2147-45C CY2147-35C CY7C148-35C CY7C148-25C+ CY91L22-45C CY93L422AC CY2147-45C CY7C147-45C CY7C148-45C CY7C148-35C


    Original     		PDF CY2147-35C CY7C147-35C CY7C147-45C CY91L22-35C CY7C122-35C CY2147-45C CY7C148-35C CY7C148-25C+ ATPA 7130SA100P 24l01 7C263/4-35C 7164S15Y cy9122-25 7133SA35J 7142sa55 7130sa55p cy2149-45c

    Untitled

    Abstract: No abstract text available
    Text: Rev: 102108 DS33M33 Demo Kit General Description The DS33M33 demo kit DK is an easy-to-use evaluation board for the DS33M33 and the DS33M33 Ethernet-over-SONET/SDH devices. The demo kit contains an option for either T3 or E3. The T3E3 links are complete with line interface, transformers, and


    Original     		PDF DS33M33 DS33M33 CB168 CB107 CB165 CB100 dp83865bvh

    vhdl code for dice game

    Abstract: Video Proc 3.3V 0.07A 64-Pin PQFP ez811 GRAPHICAL LCD interfaced with psoc 5 cypress ez-usb AN2131QC CYM9239 vhdl code PN 250 code generator CY3649 cy7c63723 Keyboard and Optical mouse program CY7C9689 ethernet
    Text: Product Selector Guide Communications Products Description Pins Part Number Freq. Range Mbps ICC (mA) Packages* 3.3V SONET/SDH PMD Transceiver 2.5V SiGe Low Power SONET/SDH Transceiver SONET/SDH Transceiver w/ 100K Logic 2.5 G-Link w/ 100K Logic OC-48 Packet Over SONET (POS) Framer


    Original     		PDF OC-48 CYS25G0101DX CYS25G0102 CYS25G01K100 CYP25G01K100 CY7C9536 CY7C955 CY7B952 CY7B951 10BASE vhdl code for dice game Video Proc 3.3V 0.07A 64-Pin PQFP ez811 GRAPHICAL LCD interfaced with psoc 5 cypress ez-usb AN2131QC CYM9239 vhdl code PN 250 code generator CY3649 cy7c63723 Keyboard and Optical mouse program CY7C9689 ethernet

    TSOP 48 thermal resistance

    Abstract: 130C 8361H CY62148 CY62148V JESD22 tsop package MSL
    Text: Cypress Semiconductor Package Qualification Report QTP# 000805 VERSION 1.0 October 2000 32 Lead 400 mil TSOP type ll package and Moisture Level 3 Chip Pac Hyundai Korea CYPRESS TECHNICAL CONTACT FOR QUALITFICATION DATA: Ed Russell Reliability Director (408) 432–7069


    Original     		PDF CY62148 CY62148V R52LD-3) 30C/60 CY62148-ZSC TSOP 48 thermal resistance 130C 8361H CY62148 CY62148V JESD22 tsop package MSL

    EPM5128LC

    Abstract: IDT CYPRESS CROSS REFERENCE clocks epm5064lc-1 EPM5128LC-1 EPM5064LC EPM5128LC-2 EPM5128GI EPM5128JC-1 8464c 5962-8871309
    Text: Product Line Cross Reference CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS CY2148-35C CY21L48-35C CY7C168A-35C CY7C168A-25C 5962-8871309XX 5962-89839112X CY2148-35C CY7C148-35C CY7C168A-45M CY7C168A-35M+ 5962-8871310RX 5962-8983913RX CY2148-35M CY7C148-35M CY7C169A-35C


    Original     		PDF CY2148-35C CY21L48-35C CY7C168A-35C CY7C168A-25C 5962-8871309XX 5962-89839112X CY7C148-35C CY7C168A-45M CY7C168A-35M+ EPM5128LC IDT CYPRESS CROSS REFERENCE clocks epm5064lc-1 EPM5128LC-1 EPM5064LC EPM5128LC-2 EPM5128GI EPM5128JC-1 8464c 5962-8871309

    TC554161A

    Abstract: HY62WT08081E K6X8008C2B CY62148E r1lv0416 K6F1616 k6t0808c1d BH616UV4010 BH616UV8010 BH62UV4000
    Text: BSI Ultra Low Power SRAM Cross Reference Table BH-Series Density Config. x8 Part No. BH62UV4000 Speed ns 55 Iccsb1 Typical (at 25C) 2V 3V 5V Icc 3V 1MHz fmax 5V fmax 2uA 1.5mA N.A. 2uA N.A 9mA Voltage (V) Renesas Hynix BH616UV4010 55 2uA 2uA N.A 1.5mA 9mA


    Original     		PDF BH62UV4000 BH616UV4010 BH62UV8000 BH616UV8010 BH62UV1600 BH616UV1610 TC55V4000 TC55VEM208ASTN T16LV8017 K6X8008T2B TC554161A HY62WT08081E K6X8008C2B CY62148E r1lv0416 K6F1616 k6t0808c1d BH616UV4010 BH616UV8010 BH62UV4000

    HM628100

    Abstract: HM6216514 M5M5256D-L K6X0808C1D BS616LV1010 BS616LV2016 BS616LV2019 BS616UV2019 K6X8008C2B BS62LV2006
    Text: BSI Low Power SRAM Cross Reference Table Nov-30-2008 Density Configuration Part No. Speed ns Iccsb1 Typical (at 25C) 2V 3V 5V Icc 3V 1MHz fmax 5V fmax Voltage (V) Samsung Cypress 2.4~5.5 x8 BS62LV256 70 0.05uA 0.1uA 0.4uA 1mA 20mA 35mA BS62LV1027 55/70 0.1uA


    Original     		PDF Nov-30-2008 BS62LV256 M5M5256D-G K6X0808T1D CY62256V IS62LV256AL BS62LV1027 BS616LV1010 CY62256 M5M5256D-L HM628100 HM6216514 M5M5256D-L K6X0808C1D BS616LV1010 BS616LV2016 BS616LV2019 BS616UV2019 K6X8008C2B BS62LV2006

    M5M418165

    Abstract: NEC 2581 CSP-48 AS7C33256PFS18A tc5588 KM6865 FLASH CROSS 256K16 TR-81090 la 4620
    Text: Product Guide SRAM 64K 256K 512K All densities in bits 1M 2M 1.65V-3.6V Low-power Asynchronous IntelliwattT M 32Kx8 5V Fast Asynchronous 4M 8M 16M 512K×8 1M×8 2M×8 256K×16 3.3V Fast Asynchronous 8K×8 32K×8 32K×16 32K×16 128K×8 512K×8 64K×16


    Original     		PDF Q4--2000 1Mx18 512Kx36 SE-597 x2255 M5M418165 NEC 2581 CSP-48 AS7C33256PFS18A tc5588 KM6865 FLASH CROSS 256K16 TR-81090 la 4620

    Untitled

    Abstract: No abstract text available
    Text: CY62148V MoBL 512Kx 8 MoBL Static RAM Features • Low voltage range: — 1 .8 V - 3 . • • • • • • Ultra low active power Low standby power _ _ Easy memory expansion with CS- /CS2 and OE features TTL-compatible inputs and outputs Automatic power-down when deselected


    OCR Scan     		PDF CY62148V 512Kx

    Untitled

    Abstract: No abstract text available
    Text: V CYPRESS ADVANCED INFORMATION CY62148V MoBL 512K x 8 MoBL Static RAM W riting to the device is accom p lish ed by takin g C hip Enable CE and W rite Enable (W E) inputs LOW. Data on th e eight I/O pins (l/O 0 th ro u g h l/ 0 7) is then w ritte n into th e location s p e ci­


    OCR Scan     		PDF CY62148V

    Untitled

    Abstract: No abstract text available
    Text: fax id: 1093 PRELIMINARY Features 512Kx 8 Static RAM CY62148V an au to m a tic pow er-dow n feature tha t reduces pow er co n ­ sum p tion by m ore than 99% w h en deselected. • 2 .7 V -3 .6 V o peratio n W riting to th e device is acco m plishe d by taking chip enable


    OCR Scan     		PDF 512Kx CY62148V

    62148

    Abstract: qB17 CF S34
    Text: fax id: 1093 CY62148V 5 1 2 K x 8 Static RAM an automatic power-down feature that reduces power con­ sumption by more than 99% when deselected. Features • 2.7V -3.6V operation • CMOS for optimum speed/power • Low active power Writing to the device is accomplished by taking chip enable


    OCR Scan     		PDF CY62148V 62148 qB17 CF S34

    E825

    Abstract: CY62148V ZS32
    Text: fax id: 1093 O YPH ESS W CY62148V PRELIMINARY 512Kx 8 Static RAM Features an au tom atic pow er-dow n feature tha t reduces pow er co n ­ sum p tion by m ore than 99% w h en deselected. • 2 .7 V -3 .6 V o peratio n W riting to th e device is accom plished by taking chip enable


    OCR Scan     		PDF CY62148V CY62148V E825 ZS32

    SOIC-36

    Abstract: 40 pin J004 BA37 CY62148V CY62148VL-70SI CY62148VL-70ZI CY62148VLL-70BAI ZS32 CY62148VL-70BAI
    Text: V CYPRESS ADVANCED INFORMATION Features CY62148V MoBL 512K x 8 MoBL Static RAM W riting to the device is accom p lish ed by takin g C hip Enable CE and W rite Enable (WE) inputs LOW. Data on th e eight I/O pins (l/O 0 thro u g h l/ 0 7) is then w ritte n into the location sp e ci­


    OCR Scan     		PDF CY62148V SOIC-36 40 pin J004 BA37 CY62148VL-70SI CY62148VL-70ZI CY62148VLL-70BAI ZS32 CY62148VL-70BAI