2.2Uf electrolytic capa DEC
Abstract: No abstract text available
Text: Datasheet 6-Channel White LED Driver with Integrated FET for up to 60 LEDs BD6590MUV ●General Description BD6590MUV is white LED driver IC with PWM step-up DC/DC converter that can boost max 40V and current driver that can drive max 30mA. The wide and precision brightness can be controlled by external
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BD6590MUV
BD6590MUV
MAX30mA/ch)
2.2Uf electrolytic capa DEC
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1250KHZ
Abstract: MCR03PZPZD7502
Text: Datasheet 6-Channel White LED Driver with Integrated FET for up to 60 LEDs BD6590MUV ●General Description BD6590MUV is white LED driver IC with PWM step-up DC/DC converter that can boost max 40V and current driver that can drive max 30mA. The wide and precision brightness can be controlled by external
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BD6590MUV
BD6590MUV
MAX30mA/ch)
1250KHZ
MCR03PZPZD7502
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ifm D 45128
Abstract: kd 2060 transistor
Text: .co m Original Device Manual ClassicController w.if m CR0032 Runtime system v02 ele ifm 7390660_07_UK 2014-08-15 ctro nic gm bh ww CODESYS v2.3 > English ifm Device Manual ecomatmobile ClassicController CR0032 Runtime System V02 2014-08-15 .co m Contents
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CR0032
CR0032)
ifm D 45128
kd 2060 transistor
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IRFF122
Abstract: IRFF123
Text: IRFF122,123 F [ f F 5.0 AMPERES 100, 60 VOLTS Rd S ON = 0.4 n HELD EFFECT POWER TRANSISTOR Preliminary This series of N -C hannel Enhancem ent-m ode Power MOSFETs utilizes G E’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged
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IRFIF122
IRFF122^
IRFF123-Â
IRFF122
IRFF123
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Untitled
Abstract: No abstract text available
Text: QS723620 Ô High-Speed CMOS 1 K X 3 6 Clocked FIFO with Bus Sizing QS723620 FEATURES • Fast cycle times: 20/25/30 ns • Selectable 36/18/9-bit word width for both input port and output port • Byte-order-reversal function i.e., “big-endian” o “little-endian” conversion
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QS723620
36/18/9-bit
16-mA-loL
132-Pin
MDSF-00020-00
74bbfl03
DDD50SÔ
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D84DL2
Abstract: IRF530 N-Channel fet
Text: IRF530,531 D84DL2,K2 Ftrnr HELD EFFECT POWER TRANSISTOR 114.0 AMPERES 100, 60 VOLTS R[ S ON) = 0.18 n This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability.
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IRF530
D84DL2
100ms
TC-25Â
IRF530/D84DL2
IRF531/D84DK2
N-Channel fet
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IGT6D21
Abstract: IGT6E21
Text: IGT6D21.E21 Insulated Gate Bipolar Transistor This IG T " Transistor Insulated Gate Bipolar Transistor is a new type of MOS-gate turn on/off power switching device combining the best advantages of power MOSFETS and bipolar transistors. The result is a device that has the high
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IGT6D21
-f--10%
IGT6E21
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IRF722
Abstract: IRF723
Text: [P3MÌfiì°[ ffiQ)§> FUT IRF722,723 2.5 AMPERES 400, 350 VOLTS Rd S ON) = 2.5 n FIELD EFFECT POWER TRANSISTOR This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged
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100ms
RDS10N|
IRF722
IRF723
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transistor tl 187
Abstract: IRF542 IRF543 2415a
Text: [FÂiiMÆSSF IRF542,543 24 AMPERES 100, 60 VOLTS INDS ON = 0.11 n FIELD EFFECT POWER TRANSISTOR This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged
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IRF542
00A//usec,
transistor tl 187
IRF543
2415a
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IRFF210
Abstract: IRFF211
Text: IMEF RELD EFFECT POWER TRANSISTOR IRFF210,211 2.2 AM PERES 200,150 VOLTS RD S O N = 1.5 n Preliminary This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged
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IRFF210
33K/W
RFF211â
IRFF211
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74F253
Abstract: PI5C3253 PI74FCT253T SL01
Text: l l l l l i l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l M I I I I I I I I I I I I I I I I I Bus Switch Dual 4:1 MUX/DEMUX Product Features:
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16-pin
TD02174
74F253
PI5C3253
PI74FCT253T
SL01
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Untitled
Abstract: No abstract text available
Text: P ER ICOM PI5V330 i i mi i i i i i i i i i i i i i i i i i i i i i i i i i i i i i i i i i i i i i i i i i i i i i i i i i i i i i i i i i i i i i i i i i i i i i i i i i i i i Mi i i i i i i i i i i i i i i i i i i i i i i i i i i i i i i i i i i i i i i i i i i i i i i i i i i i i i i
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16-pin
300-mil
150-mil
PI5V330
bidirectio07/97
HP41800A
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5050H
Abstract: No abstract text available
Text: F t a u c r StaFiCO TiO NS m Integrated Circuits &oup ID245P01 32M B FJaán M em or/ C a id H od e l N o D 245P01 Spec No. : U 807001 Issue Dat e: J i ^ 8 , 1 9 9 8 SHARP I D 2 4 5 P 0 1 O Handle this document carefully for it contains material protected by international copyright law. Any repro
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ID245P01
245P01)
5050H
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irf8408
Abstract: transistor irf840 fet irf840 inverter irf840 VNE40 IRFB40 D84ER2 high voltage pulse with irf840 3232a Application of irf840
Text: IRF840.841 D84ER2.R1 [MIT 8 AMPERES 500, 450 VOLTS r DS ON = °-85 n FIELD EFFECT POWER TRANSISTOR This series of N -C hannel Enhancem ent-m ode Power MOSFETs utilizes G E’s advanced Power DM OS technology to achieve low on-resistance with excellent device rugged
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IRF840
D84ER2
00A/jusec,
250uA.
irf8408
transistor irf840
fet irf840
inverter irf840
VNE40
IRFB40
high voltage pulse with irf840
3232a
Application of irf840
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SEC irf630
Abstract: D84 TRANSISTOR irf630 D84DN2 Irf631 Switching N-Channel Power MOS FET 50a transistor irf630 IRF630 Transistor
Text: IRF630,631 D84DN2.M2 lP MIfiiD !i£§ FIT FIELD EFFECT POWER TRANSISTOR 9.0 AMPERES S!00,150 VOLTS RDS(ON = 0-4 A This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged
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IRF630
D84DN2
12-5n
00A//usec,
SEC irf630
D84 TRANSISTOR
Irf631
Switching N-Channel Power MOS FET 50a
transistor irf630
IRF630 Transistor
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P55i
Abstract: B0000h-BFFFF
Text: • HYUNDAI HY29F800 Series 1M x 8-bit / 512K x 16-bit CMOS 5.0 volt-only, Sector Erase Flash Memory KEY FEATURES • 5.0 V 1 10% Read, Program, and Erase - Minimizes syslem-level power requirements • Compatible with JEDEC-Standard Commands - Uses software commands, pinouts, and
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16Kbytes,
HY29F800
16-bit
16-bit)
P-55I,
T-55I,
R-551
P-55E,
T-55E,
P55i
B0000h-BFFFF
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tg0-e
Abstract: PI74LPT241 LPT24
Text: fuPER I COM PI74LPT241 11111 II 11i 111111111111111 II 111111111111111111111111111 il I i M i i i m i i i i i i i m i i i i i i i m i m i i i i i i i i i i m i i i i i i i i i i Fast CMOS 3.3V 8-Bit Buffer/Line Driver Product Features: • Compatible with LCX and LVT™ families of products
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20-pin
173-mil
150-mil
300-mil
PI74LPT241
111111111111111ns
tg0-e
PI74LPT241
LPT24
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Untitled
Abstract: No abstract text available
Text: ISSI IS89C51 CMOS SINGLE CHIP 8-BIT MICROCONTROLLER with 4-Kbytes of FLASH NOVEMBER 1998 FEATURES GENERAL DESCRIPTION • 8 0C 51 b ased arch itecture • 4 - K bytes of on-chip R e p ro g ra m m a b le Flash The lS S I IS89C51 is a high-performance microcontroller
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IS89C51
80C51
16-bit
40-pin
44-pin
600-mil
-12PLI
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Untitled
Abstract: No abstract text available
Text: fÙ PERICOM PI5C3257 11111111111111111111111111111111111 il 111111111111111111111111111111111111111111111 il 111111111111111111111111111111 Quad 2:1 MUX/DEMUX BusSwitch Product Features: Product Description: • Near zero propagation delay Pericom Semiconductor’s PI5C series of logic circuits are pro
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PI5C3257
PI74FCT257T,
74F257,
74ALS/AS/LS257.
PS7018A
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IRFF312
Abstract: IRFF313
Text: FUT HELD EFFECT POWER TRANSISTOR IRFF312,313 1.15 AMPERES 400, 350 VOLTS Rd S ON = 5.0 Í1 Preliminar/ This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged
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IRFF312
IRFF31
1RFF31
IRFF313
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IRFI50
Abstract: IRF150 DM160 D86FL2 irf151
Text: IRF150,151 D86FL2.K2 [F@MÌRì”[ ìfiS S > FIT HELD EFFECT POWER TRANSISTOR This series of N -C hannel Enhancem ent-m ode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged ness and reliability.
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IRF150
D86FL2
300//s,
IRFI50
DM160
irf151
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F832
Abstract: IRF833 IRF832
Text: IRF832,833 [F^ÿM ^KÆ © [FUT 4.0 AMPERES 500, 450 VOLTS RDS ON = 2.0 n RELD EFFECT POWER TRANSISTOR This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged
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IRF832
F832
IRF833
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Untitled
Abstract: No abstract text available
Text: IDT7132SA/LA IDT7142SA/LA CMOS DUAL-PORT RAM 1 6 K 2 K x 8 -B IT Integrated D evice T echnology, Inc. FEATURES: DESCRIPTION: • High-speed access — Military: 25/35/55/100ns (max.) — Com mercial: 25/35/55/100ns (max,) — Com mercial: 20ns only in PLCC for 7132
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IDT7132SA/LA
IDT7142SA/LA
25/35/55/100ns
IDT7132/42SA
IDT7132/42LA
IDT7132
16-ormore
IDT7142
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TO-5 header
Abstract: CLD156 CLD156R
Text: CLD156. CLD156R S f Clairex Large Active Area Silicon Planar photodiodes features • • • • Technologies, me. May, 2001 absolute maximum ratings (TA = 25°C unless otherwise stated 100° acceptance angle 860nm peak response TO-5 hermetic package usable for visible through near-IR
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CLD156,
CLD156R
860nm
CLD156
CLD156R
current01
100mV,
voltage11'
TO-5 header
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