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    CREE GATE RESISTOR Search Results

    CREE GATE RESISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TB67H481FTG Toshiba Electronic Devices & Storage Corporation Stepping and Brushed Motor Driver /Bipolar Type / Vout(V)=50 / Iout(A)=3.0 / IN input type / VQFN32 Visit Toshiba Electronic Devices & Storage Corporation
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation

    CREE GATE RESISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CGHV1J025D

    Abstract: No abstract text available
    Text: CGHV1J025D 25 W, 18.0 GHz, GaN HEMT Die Cree’s CGHV1J025D is a high voltage gallium nitride GaN High Electron Mobility Transistor (HEMT) on a silicon carbide substrate, using a 0.25 m gate length fabrication process. This GaN-on-SiC product offers superior high


    Original     		PDF CGHV1J025D CGHV1J025D 18GHz

    Untitled

    Abstract: No abstract text available
    Text: CGHV1J006D 6 W, 18.0 GHz, GaN HEMT Die Cree’s CGHV1J006D is a high voltage gallium nitride GaN High Electron Mobility Transistor (HEMT) on a silicon carbide substrate, using a 0.25 m gate length fabrication process. This GaN-on-SiC product offers superior high


    Original     		PDF CGHV1J006D CGHV1J006D 18GHz

    CGHV1J025D

    Abstract: G40V4 bonding wire cree
    Text: CGHV1J025D 25 W, 18.0 GHz, GaN HEMT Die Cree’s CGHV1J025D is a high voltage gallium nitride GaN High Electron Mobility Transistor (HEMT) on a silicon carbide substrate, using a 0.25 m gate length fabrication process. This GaN-on-SiC product offers superior high


    Original     		PDF CGHV1J025D CGHV1J025D 18GHz High7703 G40V4 bonding wire cree

    CGHV1J006D

    Abstract: transistor j813 G40V4 hemt .s2p B 1318 191986 high power transistor s-parameters cree gate resistor
    Text: CGHV1J006D 6 W, 18.0 GHz, GaN HEMT Die Cree’s CGHV1J006D is a high voltage gallium nitride GaN High Electron Mobility Transistor (HEMT) on a silicon carbide substrate, using a 0.25 m gate length fabrication process. This GaN-on-SiC product offers superior high


    Original     		PDF CGHV1J006D CGHV1J006D 18GHz E7703 transistor j813 G40V4 hemt .s2p B 1318 191986 high power transistor s-parameters cree gate resistor

    CGHV1J025D

    Abstract: No abstract text available
    Text: CGHV1J025D 25 W, 18.0 GHz, GaN HEMT Die Cree’s CGHV1J025D is a high voltage gallium nitride GaN High Electron Mobility Transistor (HEMT) on a silicon carbide substrate, using a 0.25 m gate length fabrication process. This GaN-on-SiC product offers superior high


    Original     		PDF CGHV1J025D CGHV1J025D 18GHz

    Untitled

    Abstract: No abstract text available
    Text: CGHV1J070D 70 W, 18.0 GHz, GaN HEMT Die Cree’s CGHV1J070D is a high voltage gallium nitride GaN High Electron Mobility Transistor (HEMT) on a silicon carbide substrate, using a 0.25 m gate length fabrication process. This GaN-on-SiC product offers superior high frequency, high efficiency features. It is


    Original     		PDF CGHV1J070D CGHV1J070D 18GHz

    CGHV1J070D

    Abstract: G40V4 Transistor 17567
    Text: CGHV1J070D 70 W, 18.0 GHz, GaN HEMT Die Cree’s CGHV1J070D is a high voltage gallium nitride GaN High Electron Mobility Transistor (HEMT) on a silicon carbide substrate, using a 0.25 m gate length fabrication process. This GaN-on-SiC product offers superior high frequency, high efficiency features. It is


    Original     		PDF CGHV1J070D CGHV1J070D 18GHz E7703 G40V4 Transistor 17567

    CMPA0060002D

    Abstract: bonding wire cree
    Text: CMPA0060002D 2 Watt, 20 MHz - 6000 MHz GaN HEMT MMIC Power Amplifier Cree’s CMPA0060002D is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon


    Original     		PDF CMPA0060002D CMPA0060002D CMPA00 bonding wire cree

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CMPA0060002D 2 Watt, 20 MHz - 6000 MHz GaN HEMT MMIC Power Amplifier Cree’s CMPA0060002D is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon


    Original     		PDF CMPA0060002D CMPA0060002D CMPA00

    CMPA0060025D

    Abstract: No abstract text available
    Text: CMPA0060025D 25 W, 20 MHz - 6.0 GHz, GaN MMIC, Power Amplifier Cree’s CMPA0060025D is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium


    Original     		PDF CMPA0060025D CMPA0060025D CMPA00

    CMPA801B025

    Abstract: X-band Internally Matched Power GaN HEMTs
    Text: CMPA801B025F 25 W, 8.5 - 11.0 GHz, GaN MMIC, Power Amplifier Cree’s CMPA801B025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher


    Original     		PDF CMPA801B025F CMPA801B025F CMPA80 1B025F CMPA801B025 X-band Internally Matched Power GaN HEMTs

    Untitled

    Abstract: No abstract text available
    Text: CMPA801B025F 25 W, 8.0 - 11.0 GHz, GaN MMIC, Power Amplifier Cree’s CMPA801B025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher


    Original     		PDF CMPA801B025F CMPA801B025F CMPA80 1B025F

    Untitled

    Abstract: No abstract text available
    Text: CMPA0060002D 2 Watt, 20 MHz - 6000 MHz GaN HEMT MMIC Power Amplifier Cree’s CMPA0060002D is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon


    Original     		PDF CMPA0060002D CMPA0060002D CMPA00

    CMPA0060025

    Abstract: bonding wire cree A114D S-21105 CMPA0060025D
    Text: CMPA0060025D 25 W, 20 MHz - 6.0 GHz, GaN MMIC, Power Amplifier Cree’s CMPA0060025D is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium


    Original     		PDF CMPA0060025D CMPA0060025D CMPA00 CMPA0060025 bonding wire cree A114D S-21105

    Untitled

    Abstract: No abstract text available
    Text: CMPA5585025F 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA5585025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher


    Original     		PDF CMPA5585025F CMPA5585025F CMPA55 85025F

    Untitled

    Abstract: No abstract text available
    Text: CMPA801B025F 25 W, 8.5 - 11.0 GHz, GaN MMIC, Power Amplifier Cree’s CMPA801B025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher


    Original     		PDF CMPA801B025F CMPA801B025F CMPA80 1B025F

    Untitled

    Abstract: No abstract text available
    Text: CMPA5585025F 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA5585025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher


    Original     		PDF CMPA5585025F CMPA5585025F CMPA55 85025F

    Untitled

    Abstract: No abstract text available
    Text: CMPA5585025F 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA5585025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium


    Original     		PDF CMPA5585025F CMPA5585025F CMPA55 85025F

    JX - 638

    Abstract: CRF-20010 CRF-20010-001 Cree Microwave silicon carbide
    Text: CRF-20010-001 CRF-20010-101 MICROWAVE 10 W SiC RF Power MESFET CASE STYLE 001 CRF-20010-001 Features Applications • • • • • • • • • • • • • 12 dB Small Signal Gain 10 W Minimum P1dB 48 V Operation High Breakdown Voltage High Temperature Operation


    Original     		PDF CRF-20010-001 CRF-20010-101 CRF-20010 JX - 638 CRF-20010-001 Cree Microwave silicon carbide

    TRANSISTOR SUBSTITUTION

    Abstract: tba 2003 capacitor j4 22010 TRANSISTOR SUBSTITUTION DATA BOOK 08051C222MAT2A 12061C104MAT2A CRF-22010 CRF-22010-TB RO4003
    Text: CRF-22010-TB Evaluation Board for CRF-22010 Version A Narrowband Features • • • • • • Ready-to-Go RF Amplifier Requires Two Power Supplies Externally Adjustable Gate Bias Voltage Solderless Transistor Changeout Includes Heat Sink, Fan, and Wiring Harness


    Original     		PDF CRF-22010-TB CRF-22010 CRF-22010-TB-A CRF-22010 TRANSISTOR SUBSTITUTION tba 2003 capacitor j4 22010 TRANSISTOR SUBSTITUTION DATA BOOK 08051C222MAT2A 12061C104MAT2A CRF-22010-TB RO4003

    CRF24060

    Abstract: CRF24060F C17AH TRANSISTOR SUBSTITUTION TRANSISTOR SUBSTITUTION DATA BOOK CRF-24060 rogers
    Text: CRF24060 60 W, SiC RF Power MESFET Cree’s CRF24060 is an unmatched silicon carbide SiC RF power MetalSemiconductor Field-Effect Transistor (MESFET). SiC has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher


    Original     		PDF CRF24060 CRF24060 CRF240 CRF24060F C17AH TRANSISTOR SUBSTITUTION TRANSISTOR SUBSTITUTION DATA BOOK CRF-24060 rogers

    Untitled

    Abstract: No abstract text available
    Text: CMPA5585025F 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA5585025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher


    Original     		PDF CMPA5585025F CMPA5585025F CMPA55 85025F

    Untitled

    Abstract: No abstract text available
    Text: CMPA5585025F 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA5585025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium


    Original     		PDF CMPA5585025F CMPA5585025F CMPA55 85025F

    Untitled

    Abstract: No abstract text available
    Text: CMPA5585025F 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA5585025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher


    Original     		PDF CMPA5585025F CMPA5585025F CMPA55 85025F