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    08051C222MAT2A Search Results

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    08051C222MAT2A Price and Stock

    Kyocera AVX Components 08051C222MAT2A

    Multilayer Ceramic Capacitor, 2200 pF, 100 V, ? 20%, X7R, 0805 [2012 Metric] - Tape and Reel (Alt: KGM21NR72A222MT)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas 08051C222MAT2A Reel 12 Weeks 4,000
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    08051C222MAT2A Reel 12 Weeks 4,000
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    Mouser Electronics 08051C222MAT2A
    • 1 $0.21
    • 10 $0.137
    • 100 $0.07
    • 1000 $0.045
    • 10000 $0.039
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    Newark 08051C222MAT2A Reel 4,000
    • 1 $0.052
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    • 1000 $0.052
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    Future Electronics 08051C222MAT2A Reel 12 Weeks 4,000
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    Bristol Electronics 08051C222MAT2A 4,000
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    Quest Components 08051C222MAT2A 3,200
    • 1 $0.224
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    • 100 $0.1008
    • 1000 $0.0672
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    Avnet Abacus 08051C222MAT2A Reel 16 Weeks 4,000
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    08051C222MAT2A Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    08051C222MAT2A AVX X7R Dielectric Capacitor Original PDF
    08051C222MAT2A AVX Ceramic Capacitors, Capacitors, CAP CER 2200PF 100V 20% X7R 0805 Original PDF

    08051C222MAT2A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TRANSISTOR SUBSTITUTION

    Abstract: tba 2003 capacitor j4 22010 TRANSISTOR SUBSTITUTION DATA BOOK 08051C222MAT2A 12061C104MAT2A CRF-22010 CRF-22010-TB RO4003
    Text: CRF-22010-TB Evaluation Board for CRF-22010 Version A Narrowband Features • • • • • • Ready-to-Go RF Amplifier Requires Two Power Supplies Externally Adjustable Gate Bias Voltage Solderless Transistor Changeout Includes Heat Sink, Fan, and Wiring Harness


    Original     		PDF CRF-22010-TB CRF-22010 CRF-22010-TB-A CRF-22010 TRANSISTOR SUBSTITUTION tba 2003 capacitor j4 22010 TRANSISTOR SUBSTITUTION DATA BOOK 08051C222MAT2A 12061C104MAT2A CRF-22010-TB RO4003

    CRF24010F

    Abstract: 0592 transistor substitution chart atc 17-33 CRF24010P substrate 106-682 2244 PORCELAIN CRF24010 127324
    Text: CRF24010 10 W, SiC RF Power MESFET Cree’s CRF24010 is an unmatched silicon carbide SiC RF power MetalSemiconductor Field-Effect Transistor (MESFET). SiC has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher


    Original     		PDF CRF24010 CRF24010 CRF240 F24010F CRF24010F 0592 transistor substitution chart atc 17-33 CRF24010P substrate 106-682 2244 PORCELAIN 127324