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    CGHV1J025D Price and Stock

    MACOM CGHV1J025D-GP4

    RF MOSFET HEMT 40V DIE
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    DigiKey CGHV1J025D-GP4 Tray 100 10
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    • 10 $198.156
    • 100 $193.78433
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    Mouser Electronics CGHV1J025D-GP4 180
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    • 100 $186.48
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    Richardson RFPD CGHV1J025D-GP4 1
    • 1 $272.2
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    • 100 $272.2
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    CGHV1J025D Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    CGHV1J025D-GP4 Cree/Wolfspeed Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - RF MOSFET HEMT 40V DIE Original PDF

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    CGHV1J025D

    Abstract: G40V4 bonding wire cree
    Text: CGHV1J025D 25 W, 18.0 GHz, GaN HEMT Die Cree’s CGHV1J025D is a high voltage gallium nitride GaN High Electron Mobility Transistor (HEMT) on a silicon carbide substrate, using a 0.25 m gate length fabrication process. This GaN-on-SiC product offers superior high


    Original     		PDF CGHV1J025D CGHV1J025D 18GHz High7703 G40V4 bonding wire cree

    CGHV1J025D

    Abstract: No abstract text available
    Text: CGHV1J025D 25 W, 18.0 GHz, GaN HEMT Die Cree’s CGHV1J025D is a high voltage gallium nitride GaN High Electron Mobility Transistor (HEMT) on a silicon carbide substrate, using a 0.25 m gate length fabrication process. This GaN-on-SiC product offers superior high


    Original     		PDF CGHV1J025D CGHV1J025D 18GHz

    CGHV1J025D

    Abstract: No abstract text available
    Text: CGHV1J025D 25 W, 18.0 GHz, GaN HEMT Die Cree’s CGHV1J025D is a high voltage gallium nitride GaN High Electron Mobility Transistor (HEMT) on a silicon carbide substrate, using a 0.25 m gate length fabrication process. This GaN-on-SiC product offers superior high


    Original     		PDF CGHV1J025D CGHV1J025D 18GHz