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    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6V3090N Rev. 1, 12/2011 RF Power LDMOS Transistors MRF6V3090NR1 MRF6V3090NR5 MRF6V3090NBR1 MRF6V3090NBR5 Enhancement-Mode Lateral MOSFETs Designed for commercial and industrial broadband applications with


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    PDF MRF6V3090N MRF6V3090NR1 MRF6V3090NR5 MRF6V3090NBR1 MRF6V3090NBR5 MRF6V3090NR1 MRF6V3090NR5 MRF6V3090NBR1

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP100H Rev. 0, 5/2012 RF Power LDMOS Transistors MRFE6VP100HR5 MRFE6VP100HSR5 High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs RF power transistors designed for both narrowband and broadband ISM,


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    PDF MRFE6VP100H MRFE6VP100HR5 MRFE6VP100HSR5 MRFE6VP100HR5

    UT-90-25

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MMRF1305H Rev. 0, 12/2013 RF Power LDMOS Transistors MMRF1305HR5 MMRF1305HSR5 High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs RF power transistors suitable for both narrowband and broadband CW or


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    PDF MMRF1305H MMRF1305HR5 MMRF1305HSR5 MMRF1305HR5 UT-90-25

    LDMOS DVB-T transistors

    Abstract: 470-860 CRCW120610RJ RF high POWER TRANSISTOR
    Text: Freescale Semiconductor Technical Data Document Number: MRF6V3090N Rev. 1, 12/2011 RF Power LDMOS Transistors MRF6V3090NR1 MRF6V3090NR5 MRF6V3090NBR1 MRF6V3090NBR5 Enhancement-Mode Lateral MOSFETs Designed for commercial and industrial broadband applications with


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    PDF MRF6V3090N MRF6V3090NR1 MRF6V3090NR5 MRF6V3090NBR1 MRF6V3090NBR5 LDMOS DVB-T transistors 470-860 CRCW120610RJ RF high POWER TRANSISTOR

    G2225X7R225KT3AB

    Abstract: m27500 transfer impedance
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP100H Rev. 0, 5/2012 RF Power LDMOS Transistors MRFE6VP100HR5 MRFE6VP100HSR5 High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs RF power transistors designed for both narrowband and broadband ISM,


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    PDF MRFE6VP100H MRFE6VP100HR5 MRFE6VP100HSR5 MRFE6VP100HR5 G2225X7R225KT3AB m27500 transfer impedance

    DVB-T Schematic

    Abstract: LDMOS DVB-T transistors DVB-T acpr MRF6VP3091N mrf6v3090n
    Text: Freescale Semiconductor Technical Data Document Number: MRF6VP3091N Rev. 0, 9/2011 RF Power LDMOS Transistors Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. Devices are suitable for use in broadcast


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    PDF MRF6VP3091N MRF6VP3091NR1 MRF6VP3091NBR1 MRF6VP3091N DVB-T Schematic LDMOS DVB-T transistors DVB-T acpr mrf6v3090n

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6VP3091N Rev. 1, 12/2011 RF Power LDMOS Transistors Enhancement-Mode Lateral MOSFETs Designed for commercial and industrial broadband applications with frequencies from 470 to 860 MHz. Devices are suitable for use in broadcast


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    PDF MRF6VP3091N MRF6VP3091NR1 MRF6VP3091NR1 MRF6VP3091NR5 MRF6VP3091NBR1 MRF6VP3091NBR5

    M27500-16RC1509

    Abstract: ferronics 11-750-K 11-750-K 12-365-K UT-90-25 Micro-coax UT m27500-16 m27500 transfer impedance transformer mttf MRFE6VP100HR5
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP100H Rev. 0, 5/2012 RF Power LDMOS Transistors MRFE6VP100HR5 MRFE6VP100HSR5 High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs RF power transistors designed for both narrowband and broadband ISM,


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    PDF MRFE6VP100H MRFE6VP100HR5 MRFE6VP100HSR5 MRFE6VP100H M27500-16RC1509 ferronics 11-750-K 11-750-K 12-365-K UT-90-25 Micro-coax UT m27500-16 m27500 transfer impedance transformer mttf

    MRF6V3090N

    Abstract: MRF6V3090NR1 MRF6V3090NBR5 mrf6v3090 DVB-T Schematic CRCW120610ROJNEA AN1955 CRCW120610KOJNEA mrf6v3090nr GPS50
    Text: Freescale Semiconductor Technical Data Document Number: MRF6V3090N Rev. 0, 4/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. Devices are suitable for use in broadcast


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    PDF MRF6V3090N MRF6V3090NR1 MRF6V3090NR5 MRF6V3090NBR1 MRF6V3090NBR5 MRF6V3090N MRF6V3090NBR5 mrf6v3090 DVB-T Schematic CRCW120610ROJNEA AN1955 CRCW120610KOJNEA mrf6v3090nr GPS50

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MMRF1018N Rev. 0, 7/2014 Freescale Semiconductor Technical Data RF Power LDMOS Transistors Enhancement-Mode Lateral MOSFETs MMRF1018NR1 MMRF1018NBR1 These 90 W RF power LDMOS transistors are designed for wideband RF power amplifiers covering the frequency range of 470 to 860 MHz.


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    PDF MMRF1018N MMRF1018NR1 MMRF1018NBR1 MMRF1018NR1 7/2014Semiconductor,

    RF high POWER TRANSISTOR

    Abstract: MRF6VP3091 AN1955 25C2240 MRF6VP3091N QAM data ATC100B201 MRF6VP3091NR1
    Text: Document Number: MRF6VP3091N Rev. 0, 9/2011 Freescale Semiconductor Technical Data RF Power LDMOS Transistors Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. Devices are suitable for use in broadcast


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    PDF MRF6VP3091N MRF6VP3091NR1 MRF6VP3091NR5 MRF6VP3091NBR1 MRF6VP3091NR1 MRF6VP3091NR5 MRF6VP3091NBR1 MRF6VP3091NBR5 RF high POWER TRANSISTOR MRF6VP3091 AN1955 25C2240 MRF6VP3091N QAM data ATC100B201

    LDMOS DVB-T transistors

    Abstract: T0272 MRF6VP3091N Rogers RO4350B 470 860 mhz application note RF high POWER TRANSISTOR
    Text: Freescale Semiconductor Technical Data Document Number: MRF6VP3091N Rev. 1, 12/2011 RF Power LDMOS Transistors Enhancement-Mode Lateral MOSFETs Designed for commercial and industrial broadband applications with frequencies from 470 to 860 MHz. Devices are suitable for use in broadcast


    Original
    PDF MRF6VP3091N MRF6VP3091NR1 MRF6VP3091NR5 MRF6VP3091NBR1 MRF6VP3091NBR5 MRF6VP3091N LDMOS DVB-T transistors T0272 Rogers RO4350B 470 860 mhz application note RF high POWER TRANSISTOR