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Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF6V3090N Rev. 1, 12/2011 RF Power LDMOS Transistors MRF6V3090NR1 MRF6V3090NR5 MRF6V3090NBR1 MRF6V3090NBR5 Enhancement-Mode Lateral MOSFETs Designed for commercial and industrial broadband applications with
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MRF6V3090N
MRF6V3090NR1
MRF6V3090NR5
MRF6V3090NBR1
MRF6V3090NBR5
MRF6V3090NR1
MRF6V3090NR5
MRF6V3090NBR1
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LDMOS DVB-T transistors
Abstract: 470-860 CRCW120610RJ RF high POWER TRANSISTOR
Text: Freescale Semiconductor Technical Data Document Number: MRF6V3090N Rev. 1, 12/2011 RF Power LDMOS Transistors MRF6V3090NR1 MRF6V3090NR5 MRF6V3090NBR1 MRF6V3090NBR5 Enhancement-Mode Lateral MOSFETs Designed for commercial and industrial broadband applications with
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MRF6V3090N
MRF6V3090NR1
MRF6V3090NR5
MRF6V3090NBR1
MRF6V3090NBR5
LDMOS DVB-T transistors
470-860
CRCW120610RJ
RF high POWER TRANSISTOR
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DVB-T Schematic
Abstract: LDMOS DVB-T transistors DVB-T acpr MRF6VP3091N mrf6v3090n
Text: Freescale Semiconductor Technical Data Document Number: MRF6VP3091N Rev. 0, 9/2011 RF Power LDMOS Transistors Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. Devices are suitable for use in broadcast
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MRF6VP3091N
MRF6VP3091NR1
MRF6VP3091NBR1
MRF6VP3091N
DVB-T Schematic
LDMOS DVB-T transistors
DVB-T acpr
mrf6v3090n
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF6VP3091N Rev. 1, 12/2011 RF Power LDMOS Transistors Enhancement-Mode Lateral MOSFETs Designed for commercial and industrial broadband applications with frequencies from 470 to 860 MHz. Devices are suitable for use in broadcast
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MRF6VP3091N
MRF6VP3091NR1
MRF6VP3091NR1
MRF6VP3091NR5
MRF6VP3091NBR1
MRF6VP3091NBR5
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MRF6V3090N
Abstract: MRF6V3090NR1 MRF6V3090NBR5 mrf6v3090 DVB-T Schematic CRCW120610ROJNEA AN1955 CRCW120610KOJNEA mrf6v3090nr GPS50
Text: Freescale Semiconductor Technical Data Document Number: MRF6V3090N Rev. 0, 4/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. Devices are suitable for use in broadcast
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MRF6V3090N
MRF6V3090NR1
MRF6V3090NR5
MRF6V3090NBR1
MRF6V3090NBR5
MRF6V3090N
MRF6V3090NBR5
mrf6v3090
DVB-T Schematic
CRCW120610ROJNEA
AN1955
CRCW120610KOJNEA
mrf6v3090nr
GPS50
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Untitled
Abstract: No abstract text available
Text: Document Number: MMRF1018N Rev. 0, 7/2014 Freescale Semiconductor Technical Data RF Power LDMOS Transistors Enhancement-Mode Lateral MOSFETs MMRF1018NR1 MMRF1018NBR1 These 90 W RF power LDMOS transistors are designed for wideband RF power amplifiers covering the frequency range of 470 to 860 MHz.
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MMRF1018N
MMRF1018NR1
MMRF1018NBR1
MMRF1018NR1
7/2014Semiconductor,
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RF high POWER TRANSISTOR
Abstract: MRF6VP3091 AN1955 25C2240 MRF6VP3091N QAM data ATC100B201 MRF6VP3091NR1
Text: Document Number: MRF6VP3091N Rev. 0, 9/2011 Freescale Semiconductor Technical Data RF Power LDMOS Transistors Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. Devices are suitable for use in broadcast
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MRF6VP3091N
MRF6VP3091NR1
MRF6VP3091NR5
MRF6VP3091NBR1
MRF6VP3091NR1
MRF6VP3091NR5
MRF6VP3091NBR1
MRF6VP3091NBR5
RF high POWER TRANSISTOR
MRF6VP3091
AN1955
25C2240
MRF6VP3091N
QAM data
ATC100B201
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LDMOS DVB-T transistors
Abstract: T0272 MRF6VP3091N Rogers RO4350B 470 860 mhz application note RF high POWER TRANSISTOR
Text: Freescale Semiconductor Technical Data Document Number: MRF6VP3091N Rev. 1, 12/2011 RF Power LDMOS Transistors Enhancement-Mode Lateral MOSFETs Designed for commercial and industrial broadband applications with frequencies from 470 to 860 MHz. Devices are suitable for use in broadcast
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Original
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MRF6VP3091N
MRF6VP3091NR1
MRF6VP3091NR5
MRF6VP3091NBR1
MRF6VP3091NBR5
MRF6VP3091N
LDMOS DVB-T transistors
T0272
Rogers RO4350B
470 860 mhz application note
RF high POWER TRANSISTOR
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