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    Vishay Dale CRCW120610R0JNEAHP

    RES SMD 10 OHM 5% 3/4W 1206
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    DigiKey CRCW120610R0JNEAHP Digi-Reel 172,987 1
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    Vishay Dale CRCW120610R0JNEAC

    RES SMD 10 OHM 5% 1/4W 1206
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    DigiKey CRCW120610R0JNEAC Digi-Reel 59,346 1
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    Vishay Dale CRCW120610R0JNEB

    RES SMD 10 OHM 5% 1/4W 1206
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    Vishay Dale CRCW120610R0JNEAIF

    RES SMD 10 OHM 5% 1/4W 1206
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    CRCW120610R0J Datasheets (13)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    CRCW120610R0JKTA Vishay RESISTOR: 10 OHM, 1/4W, 5%, PACKAGE 1206 Original PDF
    CRCW120610R0JNEA Vishay RES,FXD,MTL FLM,O 010.00,00.13W,05.0%,1206 Original PDF
    CRCW120610R0JNEAC Vishay Dale Resistors - Chip Resistor - Surface Mount - RES SMD 10 OHM 5% 1/4W 1206 Original PDF
    CRCW120610R0JNEAHP Vishay Dale Resistors - Chip Resistor - Surface Mount - RES SMD 10 OHM 5% 3/4W 1206 Original PDF
    CRCW120610R0JNEAIF Vishay Dale Resistors - Chip Resistor - Surface Mount - RES SMD 10 OHM 5% 1/4W 1206 Original PDF
    CRCW120610R0JNEB Vishay RES SMD 10 OHM 1/8W 1206 5% Original PDF
    CRCW120610R0JNEBC Vishay Dale Resistors - Chip Resistor - Surface Mount - RES 10 OHM 5% 1/4W 1206 Original PDF
    CRCW120610R0JNEBHP Vishay Dale Resistors - Chip Resistor - Surface Mount - RES SMD 10 OHM 5% 3/4W 1206 Original PDF
    CRCW120610R0JNEC Vishay Dale Resistors - Chip Resistor - Surface Mount - RES SMD 10 OHM 5% 1/4W 1206 Original PDF
    CRCW120610R0JNECHP Vishay Dale Resistors - Chip Resistor - Surface Mount - RES SMD 10 OHM 5% 3/4W 1206 Original PDF
    CRCW120610R0JNTA Vishay Dale Resistors - Chip Resistor - Surface Mount - RES SMD 10 OHM 5% 1/4W 1206 Original PDF
    CRCW120610R0JNTB Vishay Dale Resistors - Chip Resistor - Surface Mount - RES SMD 10 OHM 5% 1/4W 1206 Original PDF
    CRCW120610R0JNTC Vishay Dale Resistors - Chip Resistor - Surface Mount - RES SMD 10 OHM 5% 1/4W 1206 Original PDF

    CRCW120610R0J Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    mrfe6vp5600hs

    Abstract: MRFE6VP5600H
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP5600H Rev. 0, 12/2010 RF Power Field Effect Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR industrial including laser and plasma exciters , broadcast (analog and digital), aerospace


    Original     		MRFE6VP5600H MRFE6VP5600HR6 MRFE6VP5600HSR6 mrfe6vp5600hs MRFE6VP5600H PDF

    Untitled

    Abstract: No abstract text available
    Text: User's Guide SNVA082B – March 2004 – Revised May 2013 AN-1314 LM5020 Evaluation Board 1 Introduction The LM5020 evaluation board is designed to provide the design engineer with a fully functional nonisolated flyback power converter to evaluate the LM5020 controller.


    Original     		SNVA082B AN-1314 LM5020 PDF

    Untitled

    Abstract: No abstract text available
    Text: User's Guide SNVA292A – October 2007 – Revised April 2013 AN-1725 LM5015 Non-Isolated Two-Switch DC-DC Regulator Evaluation Board 1 Introduction The LM5015 Non-Isolated DC-DC Regulator evaluation board provides a low cost and fully functional DCDC regulator without employing any discrete power MOSFET. The evaluation board can be configured as


    Original     		SNVA292A AN-1725 LM5015 PDF

    IrL 1540 N

    Abstract: A114 A115 AN1955 C101 JESD22 MRF8S18120HR3 MRF8S18120HSR3 C3225X7R2A225KT IrL 1540 g
    Text: Freescale Semiconductor Technical Data Document Number: MRF8S18120H Rev. 0, 9/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF8S18120HR3 MRF8S18120HSR3 Designed for GSM and GSM EDGE base station applications with frequencies from 1805 to 1880 MHz. Can be used in Class AB and Class C for


    Original     		MRF8S18120H MRF8S18120HR3 MRF8S18120HSR3 MRF8S18120HR3 IrL 1540 N A114 A115 AN1955 C101 JESD22 MRF8S18120HSR3 C3225X7R2A225KT IrL 1540 g PDF

    ATC200B103KT50X

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP61K25H Rev. 4.1, 3/2014 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR industrial including laser and plasma exciters , broadcast (analog and digital), aerospace


    Original     		MRFE6VP61K25H MRFE6VP61K25HR6 MRFE6VP61K25HR5 MRFE6VP61K25HR6 MRFE6VP61K25HR5 MRFE6VP61K25HSR5 MRFE6VP61K25GSR5 ATC200B103KT50X PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF8S21100H Rev. 1, 3/2011 RF Power Field Effect Transistors MRF8S21100HR3 MRF8S21100HSR3 N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA and LTE base station applications with frequencies


    Original     		MRF8S21100H MRF8S21100HR3 MRF8S21100HSR3 MRF8S21100HR3 PDF

    ON SEMICONDUCTOR J122

    Abstract: J730 512 j122 MHz-2170 EMVY500ADA221MJA0G ATC600F1R2BT250XT 8383d 146 J122
    Text: Freescale Semiconductor Technical Data Document Number: MRF8HP21130H Rev. 0, 4/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA and LTE base station applications with frequencies from 2110 to 2170 MHz. Can be used in Class AB and Class C for all typical


    Original     		MRF8HP21130H MRF8HP2113ficers, MRF8HP21130HR3 MRF8HP21130HSR3 MRF8HP21130H ON SEMICONDUCTOR J122 J730 512 j122 MHz-2170 EMVY500ADA221MJA0G ATC600F1R2BT250XT 8383d 146 J122 PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: AFT27S006N Rev. 2, 9/2014 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 28.8 dBm RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 728 to 3600 MHz.


    Original     		AFT27S006N AFT27S006NT1 PDF

    C3225X7R2A225KT

    Abstract: 8-30VDC 74C125 UT-141C-25 rf Amplifier mhz Doherty 470-860 Rogers RO4350B microstrip ATC100B240JT500X capacitor 104 Z30 470-860 mhz Power amplifier w ATC-100B-3R0
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP8600H Rev. 1, 9/2011 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs Optimized for broadband operation from 470 to 860 MHz. Device has an integrated input matching network for better power distribution. These devices


    Original     		MRFE6VP8600H MRFE6VP8600HR6 MRFE6VP8600HR5 MRFE6VP8600HSR6 MRFE6VP8600HSR5 C3225X7R2A225KT 8-30VDC 74C125 UT-141C-25 rf Amplifier mhz Doherty 470-860 Rogers RO4350B microstrip ATC100B240JT500X capacitor 104 Z30 470-860 mhz Power amplifier w ATC-100B-3R0 PDF

    dc to dc converter step up power supply 24 volts input to 30v dc

    Abstract: CRCW12060R47F C2012COG1H101J TDK flyback transformer 1.5 Amps transformer B0695-A C4532X7R2A225M EFD20 MSOP10 step down transformer winding ratio
    Text: National Semiconductor Application Note 1314 Grant Smith March 2004 Introduction rectifier after the voltage has been removed from the first winding. This allows the converter input and output grounds to be configured either isolated or non-isolated. There is also


    Original     		LM5020 dc to dc converter step up power supply 24 volts input to 30v dc CRCW12060R47F C2012COG1H101J TDK flyback transformer 1.5 Amps transformer B0695-A C4532X7R2A225M EFD20 MSOP10 step down transformer winding ratio PDF

    MRF8S21100HS

    Abstract: MRF8S21100H
    Text: Freescale Semiconductor Technical Data Document Number: MRF8S21100H Rev. 1, 3/2011 RF Power Field Effect Transistors MRF8S21100HR3 MRF8S21100HSR3 N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA and LTE base station applications with frequencies


    Original     		MRF8S21100H MRF8S21100HR3 MRF8S21100HSR3 2110-2ers, MRF8S21100HS PDF

    HMK325BJ225KN-T

    Abstract: lmk212bj106 PA2367NL LMK212BJ106KD-T AN1725 murata flyback AN1724 100Y inductor LM5015 CRCW120610R0J
    Text: National Semiconductor Application Note 1725 Youhao,Xi October 2007 Introduction Regulator Evaluation Board www.national.com/an/AN/ AN1724.pdf . The evaluation board features: • Input Voltage: 36V to 72V • Output Voltage: 5V • Output Current: 0A minimum, 2.5A nominal, and 3A


    Original     		AN1724 LM5015 AN-1725 HMK325BJ225KN-T lmk212bj106 PA2367NL LMK212BJ106KD-T AN1725 murata flyback 100Y inductor CRCW120610R0J PDF

    transistor j241

    Abstract: ATC100B2R7BT500XT mrf8s9120 AN1955 ATC100B390J ATC100B0R8BT500XT j239 transistor j353 J181 J239 mosfet transistor
    Text: Freescale Semiconductor Technical Data Document Number: MRF8S9120N Rev. 0, 9/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF8S9120NR3 Designed for CDMA base station applications with frequencies from 700 to 1000 MHz. Can be used in Class AB and Class C for all typical cellular base


    Original     		MRF8S9120N MRF8S9120NR3 transistor j241 ATC100B2R7BT500XT mrf8s9120 AN1955 ATC100B390J ATC100B0R8BT500XT j239 transistor j353 J181 J239 mosfet transistor PDF

    transistor B 764

    Abstract: ATC600F150JT250XT 0051A
    Text: Freescale Semiconductor Technical Data Document Number: AFT09MP055N Rev. 0, 7/2013 RF Power LDMOS Transistors AFT09MP055NR1 AFT09MP055GNR1 High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs Designed for mobile two-way radio applications with frequencies from


    Original     		AFT09MP055N AFT09MP055NR1 AFT09MP055GNR1 AFT09MP055NR1 transistor B 764 ATC600F150JT250XT 0051A PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF8S18120H Rev. 1, 10/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8S18120HR3 MRF8S18120HSR3 Designed for GSM and GSM EDGE base station applications with frequencies from 1805 to 1880 MHz. Can be used in Class AB and Class C for all


    Original     		MRF8S18120H MRF8S18120HR3 MRF8S18120HSR3 MRF8S18120HR3 PDF

    DC-DC REGULATOR

    Abstract: PA2367NL AN1724 PA2194NL LM5015 HMK325BJ225KN-T CMHD4448 CA2983 T1A SOT23 100Y inductor
    Text: National Semiconductor Application Note 1724 Youhao,Xi October 2007 Introduction DC-DC Regulator Evaluation Board www.national.com/an/ AN/AN1725.pdf . The evaluation board features: • Input Voltage: 36V to 72V • Isolated Output Voltage: 5V • Output Current: 0A minimum, 2.5A nominal, and 3A


    Original     		AN/AN1725 LM5015 AN-1724 DC-DC REGULATOR PA2367NL AN1724 PA2194NL HMK325BJ225KN-T CMHD4448 CA2983 T1A SOT23 100Y inductor PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MMRF1013H Rev. 0, 7/2014 RF Power LDMOS Transistors N-Channel Enhancement-Mode Lateral MOSFETs RF power transistors designed for aerospace and defense S-band radar pulse applications operating at frequencies between 2700 and 3200 MHz.


    Original     		MMRF1013H MMRF1013HR5 MMRF1013HSR5 MMRF1013HR5 PDF

    nec2501

    Abstract: nec2501a NEC2501* Opto coupler transistor NEC 8772 p q2n2222a q2n222 zener diode 1.5KE250A MBR20H100 ac power adapter for notebook schematic NCP1230D65R2
    Text: AND8300/D NCP4302 Increasing a Notebook Adaptor's Efficiency using Synchronous Rectification http://onsemi.com Prepared by: Terry Allinder ON Semiconductor Introduction General Description The NCP4302 is a full featured controller and driver that provide all the control and protection functions necessary


    Original     		AND8300/D NCP4302 NCP4302, TL431 nec2501 nec2501a NEC2501* Opto coupler transistor NEC 8772 p q2n2222a q2n222 zener diode 1.5KE250A MBR20H100 ac power adapter for notebook schematic NCP1230D65R2 PDF

    DVB-T Schematic

    Abstract: LDMOS DVB-T transistors DVB-T acpr MRF6VP3091N mrf6v3090n
    Text: Freescale Semiconductor Technical Data Document Number: MRF6VP3091N Rev. 0, 9/2011 RF Power LDMOS Transistors Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. Devices are suitable for use in broadcast


    Original     		MRF6VP3091N MRF6VP3091NR1 MRF6VP3091NBR1 MRF6VP3091N DVB-T Schematic LDMOS DVB-T transistors DVB-T acpr mrf6v3090n PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP61K25H Rev. 2, 5/2012 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs MRFE6VP61K25HR6 MRFE6VP61K25HSR6 These high ruggedness devices are designed for use in high VSWR industrial


    Original     		MRFE6VP61K25H MRFE6VP61K25HR6 MRFE6VP61K25HSR6 MRFE6VP61K25HR6 PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6VP3091N Rev. 1, 12/2011 RF Power LDMOS Transistors Enhancement-Mode Lateral MOSFETs Designed for commercial and industrial broadband applications with frequencies from 470 to 860 MHz. Devices are suitable for use in broadcast


    Original     		MRF6VP3091N MRF6VP3091NR1 MRF6VP3091NR1 MRF6VP3091NR5 MRF6VP3091NBR1 MRF6VP3091NBR5 PDF

    IrL 1540 N

    Abstract: IrL 1540 g AN1955 MRF8S18120HR3 MRF8S18120HSR3 J-041 GPS 112 860F MRF8S18120H
    Text: Freescale Semiconductor Technical Data Document Number: MRF8S18120H Rev. 1, 10/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8S18120HR3 MRF8S18120HSR3 Designed for GSM and GSM EDGE base station applications with frequencies from 1805 to 1880 MHz. Can be used in Class AB and Class C for all


    Original     		MRF8S18120H MRF8S18120HR3 MRF8S18120HSR3 MRF8S18120HR3 IrL 1540 N IrL 1540 g AN1955 MRF8S18120HSR3 J-041 GPS 112 860F MRF8S18120H PDF

    MRFE6VP61

    Abstract: MRFE6VP 1812sms-39njlc MRFE6VP61K25H J690 ATC100B471JT200XT transistor MRFE6VP61K25H mrfe6vp61k2 MIN02--002DC390J--F ATC100B102KT50XT
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP61K25H Rev. 3, 10/2012 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR industrial including laser and plasma exciters , broadcast (analog and digital), aerospace


    Original     		MRFE6VP61K25H MRFE6VP61K25HR6 MRFE6VP61K25HSR6 MRFE6VP61K25GSR5 MRFE6VP61 MRFE6VP 1812sms-39njlc J690 ATC100B471JT200XT transistor MRFE6VP61K25H mrfe6vp61k2 MIN02--002DC390J--F ATC100B102KT50XT PDF

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MMRF1308H Rev. 0, 7/2014 Freescale Semiconductor Technical Data RF Power LDMOS Transistors N-Channel Enhancement-Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR military, aerospace and defense, industrial including laser and plasma exciters ,


    Original     		MMRF1308H MMRF1308HR5 MMRF1308HSR5 7/2014Semiconductor, PDF