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    6R125 Price and Stock

    Nexperia PSMN6R1-25MLDX

    MOSFET N-CH 25V 60A LFPAK33
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    DigiKey PSMN6R1-25MLDX Cut Tape 1,516 1
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    PSMN6R1-25MLDX Digi-Reel 1,516 1
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    PSMN6R1-25MLDX Reel 1,500
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    Avnet Americas PSMN6R1-25MLDX Reel 4 Weeks 1,963
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    PSMN6R1-25MLDX Reel 13 Weeks 4,500
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    Mouser Electronics PSMN6R1-25MLDX 561
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    Newark PSMN6R1-25MLDX Cut Tape 1
    • 1 $0.52
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    Rochester Electronics PSMN6R1-25MLDX 3,000 1
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    TTI PSMN6R1-25MLDX Reel 4,500
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    TME PSMN6R1-25MLDX 1
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    Avnet Silica PSMN6R1-25MLDX 15 Weeks 1,500
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    Chip1Stop PSMN6R1-25MLDX 11
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    EBV Elektronik PSMN6R1-25MLDX 15 Weeks 1,500
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    Bourns Inc 3386R-1-253

    TRIMMER 25K OHM 0.5W PC PIN TOP
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    DigiKey 3386R-1-253 Tube 200
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    Avnet Americas 3386R-1-253 Tube 7 Weeks 200
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    Mouser Electronics 3386R-1-253
    • 1 $2.6
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    Newark 3386R-1-253 Bulk 200
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    RS 3386R-1-253 Bulk 9 Weeks 200
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    Master Electronics 3386R-1-253
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    • 10000 $0.985
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    Bourns Inc 4116R-1-253

    RES ARRAY 8 RES 25K OHM 16DIP
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    DigiKey 4116R-1-253 Tube 2,000
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    Avnet Americas 4116R-1-253 Tube 7 Weeks 2,000
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    Newark 4116R-1-253 Bulk 2,000
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    Master Electronics 4116R-1-253
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    Bourns Inc 4116R-1-252

    RES ARRAY 8 RES 2.5K OHM 16DIP
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    DigiKey 4116R-1-252 Tube 2,000
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    Newark 4116R-1-252 Bulk 2,000
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    RS 4116R-1-252 Bulk 10 Weeks 2,000
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    Master Electronics 4116R-1-252
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    JRH Electronics MS3106R12-5P

    CONNECTOR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MS3106R12-5P 1
    • 1 $241.04
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    Find more 6R125 price and stock on Findchips.com

    6R125 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    6r125p

    Abstract: transistor 6R125P DF 331 TRANSISTOR transistor df 331 IPA60R125CP CA82 JESD22 PG-TO220-3-31 SP000095275 6R125
    Text: IPA60R125CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Worldwide best R DS,on in TO220 Fullpak 650 0.125 Ω R DS on ,max • Ultra low gate charge V Q g,typ 53 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF IPA60R125CP PG-TO220-3-31 SP000095275 6R125P 6r125p transistor 6R125P DF 331 TRANSISTOR transistor df 331 IPA60R125CP CA82 JESD22 PG-TO220-3-31 SP000095275 6R125

    6r125p

    Abstract: transistor 6R125P PG-TO-247-3-1
    Text: IPW60R125CP CoolMOSTM Power Transistor Product Summary Features V DS • Lowest figure-of-merit R ONxQg R DS on ,max • Ultra low gate charge Q g,typ 600 V 0.125 Ω 53 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF IPW60R125CP PG-TO247-3-1 SP000088489 6R125P 6r125p transistor 6R125P PG-TO-247-3-1

    6R125

    Abstract: 6R125C6
    Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R125C6 Data Sheet Rev. 0.9, 2009-08-26 Preliminary In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ C6 Power Transistor 1 IPA60R125C6, IPB60R125C6


    Original     		PDF IPx60R125C6 IPA60R125C6, IPB60R125C6 IPP60R125C6 IPW60R125C6 6R125 6R125C6

    6r125c6

    Abstract: IPx60R125C6 MOSFET TRANSISTOR SMD MARKING CODE A1 INFINEON to-220 date code marking MOSFET TRANSISTOR SMD MARKING CODE 11 IPA60R125C6 IPB60R125C6 IPP60R125C6 to247 pcb footprint JESD22
    Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R125C6 Data Sheet Rev. 2.1, 2010-02-09 Final Industrial & Multimarket 600V CoolMOS™ C6 Power Transistor 1 IPA60R125C6, IPB60R125C6 IPP60R125C6 IPW60R125C6


    Original     		PDF IPx60R125C6 IPA60R125C6, IPB60R125C6 IPP60R125C6 IPW60R125C6 6r125c6 IPx60R125C6 MOSFET TRANSISTOR SMD MARKING CODE A1 INFINEON to-220 date code marking MOSFET TRANSISTOR SMD MARKING CODE 11 IPA60R125C6 IPB60R125C6 to247 pcb footprint JESD22

    6r125p

    Abstract: transistor 6R125P 6R125 IPP60R125CP JESD22 SP000088488 CA82
    Text: IPP60R125CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.125 Ω R DS on ,max • Ultra low gate charge V Q g,typ 53 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF IPP60R125CP PG-TO220 SP000088488 6R125P 6r125p transistor 6R125P 6R125 IPP60R125CP JESD22 SP000088488 CA82

    6r125p

    Abstract: transistor 6R125P br A 708 IPW60R125CP JESD22 SP000088489 CA82 6R125
    Text: IPW60R125CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.125 Ω R DS on ,max • Ultra low gate charge V Q g,typ 53 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF IPW60R125CP PG-TO247-3-1 SP000088489 6R125P 6r125p transistor 6R125P br A 708 IPW60R125CP JESD22 SP000088489 CA82 6R125

    6r125p

    Abstract: transistor 6R125P 6R125 IPA60R125CP 6R125P TRANSISTOR JESD22 SP000095275 c25 diode to220 D16 marking code transistor ipa60r125
    Text: IPA60R125CP CoolMOS Power Transistor Product Summary Features V DS @ Tj,max • Worldwide best R DS,on in TO220 Fullpak 650 0.125 Ω R DS on ,max@T j= 25°C • Ultra low gate charge V Q g,typ 53 nC • Extreme dv/dt rated • High peak current capability


    Original     		PDF IPA60R125CP PG-TO220 SP000095275 6R125P 6r125p transistor 6R125P 6R125 IPA60R125CP 6R125P TRANSISTOR JESD22 SP000095275 c25 diode to220 D16 marking code transistor ipa60r125

    6r125p

    Abstract: transistor 6R125P IPW60R125CP JESD22 SP000088489 CA82 6R125
    Text: IPW60R125CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.125 Ω R DS on ,max • Ultra low gate charge V Q g,typ 53 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF IPW60R125CP PG-TO247-3-1 SP000088489 6R125P 6r125p transistor 6R125P IPW60R125CP JESD22 SP000088489 CA82 6R125

    6r125p

    Abstract: No abstract text available
    Text: IPP60R125CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.125 Ω R DS on ,max • Ultra low gate charge V Q g,typ 53 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF IPP60R125CP PG-TO220 SP000088488 6R125P 6r125p

    6r125c6

    Abstract: 6R125 IPx60R125C6 marking code br SMD transistor transistor 600v IPA60R125C6 IPB60R125C6 IPP60R125C6 IPW60R125C6 JESD22
    Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R125C6 Data Sheet Rev. 2.1, 2010-02-09 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ C6 Power Transistor 1 IPA60R125C6, IPB60R125C6


    Original     		PDF IPx60R125C6 IPA60R125C6, IPB60R125C6 IPP60R125C6 IPW60R125C6 6r125c6 6R125 IPx60R125C6 marking code br SMD transistor transistor 600v IPA60R125C6 IPB60R125C6 IPW60R125C6 JESD22

    IPB60R125CP

    Abstract: 6r125p
    Text: IPB60R125CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.125 Ω R DS on ,max • Ultra low gate charge V 53 Q g,typ nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF IPB60R125CP PG-TO263 SP000088488 6R125P IPB60R125CP 6r125p

    6r125p

    Abstract: No abstract text available
    Text: MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS P6 600VCoolMOS™P6PowerTransistor IPx60R125P6 DataSheet Rev.2.0 Final PowerManagement&Multimarket 600VCoolMOS™P6PowerTransistor IPW60R125P6,IPP60R125P6,IPA60R125P6 1Description


    Original     		PDF IPx60R125P6 IPW60R125P6, IPP60R125P6, IPA60R125P6 O-247 O-220 6r125p

    6r125p

    Abstract: transistor 6R125P 6R125 0380r MOSFET MARKING CODE 7V IPP60R125CP 6R125P IPP60R125CP
    Text: IPP60R125CP CoolMOSTM Power Transistor Product Summary Features V DS • Lowest figure-of-merit R ONxQg R DS on ,max • Ultra low gate charge Q g,typ 600 V 0.125 Ω 53 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF IPP60R125CP PG-TO220-3-1 SP000088488 6R125P 6r125p transistor 6R125P 6R125 0380r MOSFET MARKING CODE 7V IPP60R125CP 6R125P IPP60R125CP

    6r125c6

    Abstract: IPP60R125C6 IPA60R125C6 6R125 c6 transistor IPB60R125C6 TRANSISTOR SMD MARKING CODE IPW60R125C6 JESD22
    Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R125C6 Data Sheet Rev. 2.0, 2009-09-25 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ C6 Power Transistor 1 IPA60R125C6, IPB60R125C6


    Original     		PDF IPx60R125C6 IPA60R125C6, IPB60R125C6 IPP60R125C6 IPW60R125C6 6r125c6 IPA60R125C6 6R125 c6 transistor IPB60R125C6 TRANSISTOR SMD MARKING CODE IPW60R125C6 JESD22

    6r125p

    Abstract: transistor 6R125P 6R125 IPI60R125CP JESD22 CA82
    Text: IPI60R125CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.125 Ω R DS on ,max • Ultra low gate charge V Q g,typ 53 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF IPI60R125CP PG-TO220 PG-TO262 6R125P 6r125p transistor 6R125P 6R125 IPI60R125CP JESD22 CA82

    6R125

    Abstract: 6r125p IPP60R125CP transistor 6R125P SMD marking CODE F16 IPB60R125CP JESD22 SP000088488 CA82 IPP60R
    Text: IPB60R125CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.125 Ω R DS on ,max • Ultra low gate charge V Q g,typ 53 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF IPB60R125CP PG-TO263 IPP60R125CP PG-TO220 SP000088488 6R125P 6R125 6r125p IPP60R125CP transistor 6R125P SMD marking CODE F16 IPB60R125CP JESD22 SP000088488 CA82 IPP60R

    6r125p

    Abstract: transistor 6R125P 6R125 IPW60R125CP JESD22 SP000088489 P diode
    Text: IPW60R125CP CoolMOS Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.125 Ω R DS on ,max • Ultra low gate charge V Q g,typ 53 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF IPW60R125CP PG-TO247-3-1 SP000088489 6R125P 6r125p transistor 6R125P 6R125 IPW60R125CP JESD22 SP000088489 P diode

    DF 331 TRANSISTOR

    Abstract: 6r125p 6R125 transistor df 331 transistor 6R125P
    Text: IPA60R125CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Worldwide best R DS,on in TO220 Fullpak 650 0.125 Ω R DS on ,max • Ultra low gate charge V Q g,typ 53 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF IPA60R125CP PG-TO220-3-31 SP000095275 6R125P DF 331 TRANSISTOR 6r125p 6R125 transistor df 331 transistor 6R125P

    6r125p

    Abstract: 6R125 transistor 6R125P SP000088489 IPW60R125CP JESD22 PG-TO247-3-1 CA82
    Text: IPW60R125CP CoolMOS Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.125 Ω R DS on ,max • Ultra low gate charge V Q g,typ 53 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF IPW60R125CP PG-TO247-3-1 SP000088489 6R125P 009-134-A O-247 6r125p 6R125 transistor 6R125P SP000088489 IPW60R125CP JESD22 PG-TO247-3-1 CA82