Untitled
Abstract: No abstract text available
Text: MXP4003 – 10 Gbps InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS PRODUCT SPECIFICATION KEY FEATURES DESCRIPTION The device series offers superior noise performance and sensitivity due to their planar construction and passivation. The MXP4000 series of photo diodes
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MXP4003
MXP4000
1430nm
1550nm
MXP4003
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25um
Abstract: No abstract text available
Text: MXP4003 – 10 Gbps InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS ENGINEERING SPECIFICATION KEY FEATURES DESCRIPTION The device series offers superior noise performance and sensitivity due to their planar construction and passivation. The MXP4000 series of photo diodes
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MXP4003
1310nm
1550nm
MXP4000
1550nm
1430nm
MXP4003
25um
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1550nm photo diode for 10Gbps
Abstract: MXP4003 MXP4005
Text: MXP4005 – 12.7 Gbps InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS PRODUCT KEY FEATURES DESCRIPTION The device series offers superior noise performance and sensitivity due to their planar construction and passivation. . The MXP400X series of photo diodes are currently offered in die
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MXP4005
MXP400X
12GHz
1550nm
508um
1430nm
1550nm
1550nm photo diode for 10Gbps
MXP4003
MXP4005
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MXP4000
Abstract: PIN PHOTO DIODE construction of photo diode
Text: MXP4000 – Monitor InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS ENGINEERING SPECIFICATION KEY FEATURES DESCRIPTION The device series offers superior noise performance and sensitivity due to their planar construction and passivation. Every wafer of each lot is extensively
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MXP4000
MXP4000
PIN PHOTO DIODE
construction of photo diode
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Untitled
Abstract: No abstract text available
Text: MXP4002 – 2.5 Gbps InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS ENGINEERING SPECIFICATION KEY FEATURES DESCRIPTION The device series offers superior noise performance and sensitivity due to their planar construction and passivation. Every wafer of each lot is extensively
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MXP4002
MXP4000
1550nm
MXP4002
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construction of photo diode
Abstract: MXP4001 MXP4003 MXP4000 MXP4002 PHOTO diode
Text: MXP4002 – 2.5 Gbps InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS ENGINEERING SPECIFICATION KEY FEATURES DESCRIPTION The device series offers superior noise performance and sensitivity due to their planar construction and passivation. Every wafer of each lot is extensively
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MXP4002
MXP4000
MXP400X
00E-11
MXP4000
MXP4001
00E-12
MXP4003
construction of photo diode
MXP4001
MXP4003
MXP4002
PHOTO diode
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Untitled
Abstract: No abstract text available
Text: MXP4002 – 2.5 Gbps InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS PRODUCT SPECIFICATION KEY FEATURES DESCRIPTION The device series offers superior noise performance and sensitivity due to their planar construction and passivation. Every wafer of each lot is extensively
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MXP4002
MXP4000
p50nm
MXP4002
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Untitled
Abstract: No abstract text available
Text: MXP4003 – 10 Gbps InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS ENGINEERING SPECIFICATION KEY FEATURES DESCRIPTION The device series offers superior noise performance and sensitivity due to their planar construction and passivation. Every wafer of each lot is extensively
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MXP4003
1310nm
1550nm
MXP4000
1550nm
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construction of photo diode
Abstract: MXP4000 MXP4001 MXP4002 MXP4003 IR PHOTO DIODE amplifier 1550nm 10mW photo diode
Text: MXP4001 – 622 Mbps InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS ENGINEERING SPECIFICATION KEY FEATURES DESCRIPTION The device series offers superior noise performance and sensitivity due to their planar construction and passivation. Every wafer of each lot is extensively
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MXP4001
MXP4000
MXP400X
00E-11
MXP4000
00E-12
MXP4002
MXP4003
00E-13
construction of photo diode
MXP4001
MXP4002
MXP4003
IR PHOTO DIODE amplifier
1550nm 10mW photo diode
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Untitled
Abstract: No abstract text available
Text: MXP4002 – 2.5 Gbps InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS ENGINEERING SPECIFICATION KEY FEATURES DESCRIPTION The device series offers superior noise performance and sensitivity due to their planar construction and passivation. Every wafer of each lot is extensively
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MXP4002
1310nm
1550nm
MXP4000
1550nm
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Untitled
Abstract: No abstract text available
Text: MXP4001 – 622 Mbps InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS ENGINEERING SPECIFICATION KEY FEATURES DESCRIPTION The device series offers superior noise performance and sensitivity due to their planar construction and passivation. Every wafer of each lot is extensively
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MXP4001
MXP4000
MXP400X
00E-11
MXP4000
00E-12
MXP4002
MXP4003
00E-13
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MXP4002
Abstract: PHOTO diode
Text: MXP4002 – 2.5 Gbps InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS ENGINEERING SPECIFICATION KEY FEATURES DESCRIPTION The device series offers superior noise performance and sensitivity due to their planar construction and passivation. Every wafer of each lot is extensively
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MXP4002
1310nm
1550nm
MXP4000
1550nm
MXP4002
PHOTO diode
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Untitled
Abstract: No abstract text available
Text: MXP4002 – 2.5 Gbps InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS ENGINEERING SPECIFICATION KEY FEATURES DESCRIPTION The device series offers superior noise performance and sensitivity due to their planar construction and passivation. Every wafer of each lot is extensively
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MXP4002
MXP4000
MXP400X
00E-11
MXP4000
MXP4001
00E-12
MXP4003
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1550nm catv receiver
Abstract: MXP4000 MXP4001 MXP4002 MXP4003 1430nm
Text: MXP4003 – 12.5 Gbps InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS ENGINEERING SPECIFICATION KEY FEATURES DESCRIPTION The device series offers superior noise performance and sensitivity due to their planar construction and passivation. Every wafer of each lot is extensively
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MXP4003
MXP4000
PI714-893-2570
MXP400X
00E-11
MXP4000
MXP4001
00E-12
MXP4002
1550nm catv receiver
MXP4001
MXP4002
MXP4003
1430nm
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construction of photo diode
Abstract: GaAs array, 850nm 850nm Receivers reliability testing for photo diode
Text: MXP7A01 – 1x4 Array 10Gbps GaAs PIN Photo Diode OPTO-ELECTRONIC PRODUCTS ENGINEERING SPECIFICATION KEY FEATURES DESCRIPTION High Responsivity Low Dark Current High Bandwidth Anode/Cathode on Illuminated Side APPLICATIONS S Short Reach Optical Networks
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MXP7A01
10Gbps)
MXP7000
850nm
850nm
construction of photo diode
GaAs array, 850nm
850nm Receivers
reliability testing for photo diode
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construction of photo diode
Abstract: photo diode array amplifier MXP7A02 GaAs array, 850nm IR PHOTO DIODE amplifier 207UM
Text: MXP7A02 – 1x4 Array 3.125 Gbps GaAs PIN Photo Diode OPTO-ELECTRONIC PRODUCTS ENGINEERING SPECIFICATION KEY FEATURES DESCRIPTION High Responsivity Low Dark Current High Bandwidth Anode/Cathode on Illuminated Side APPLICATIONS S Short Reach Optical Networks
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MXP7A02
10Gigabit
MXP7000
850nm
construction of photo diode
photo diode array amplifier
MXP7A02
GaAs array, 850nm
IR PHOTO DIODE amplifier
207UM
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2um ir photodiode
Abstract: construction of photo diode GaAs 10Gbps photodiode chip photo diode array MXP7A01 GaAs array, 850nm Photo Modules IR PHOTO DIODE amplifier
Text: MXP7A01 – 1x4 Array 10Gbps GaAs PIN Photo Diode OPTO-ELECTRONIC PRODUCTS ENGINEERING SPECIFICATION KEY FEATURES DESCRIPTION High Responsivity Low Dark Current High Bandwidth Anode/Cathode on Illuminated Side APPLICATIONS S Short Reach Optical Networks
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MXP7A01
10Gbps)
10Gigabit
MXP7000
850nm
2um ir photodiode
construction of photo diode
GaAs 10Gbps photodiode chip
photo diode array
MXP7A01
GaAs array, 850nm
Photo Modules
IR PHOTO DIODE amplifier
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Untitled
Abstract: No abstract text available
Text: MXP7001 – 10Gbps GaAs PIN Photo Diode OPTO-ELECTRONIC PRODUCTS ENGINEERING SPECIFICATION KEY FEATURES DESCRIPTION High Responsivity Low Dark Current High Bandwidth Anode/Cathode on Illuminated Side APPLICATIONS S Short Reach Optical Networks S Gigabit Ethernet, Fibre Channel
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MXP7001
10Gbps
MXP7000
850nm
850nm
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PIN photodiode 850nm
Abstract: MXP7000 MXP7001
Text: MXP7001 – 12.5Gbps GaAs PIN Photo Diode OPTO-ELECTRONIC PRODUCTS ENGINEERING SPECIFICATION KEY FEATURES DESCRIPTION High Responsivity Low Dark Current High Bandwidth Anode/Cathode on Illuminated Side APPLICATIONS S Short Reach Optical Networks S 10Gigabit Ethernet, Fibre Channel
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MXP7001
10Gigabit
MXP7000
850nm
PIN photodiode 850nm
MXP7001
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construction of photo diode
Abstract: MXP7000 MXP7002 PIN PHOTO DIODE GaAs wafer 850nm Receivers
Text: MXP7002 – 3.125Gbps GaAs PIN Photo Diode OPTO-ELECTRONIC PRODUCTS ENGINEERING SPECIFICATION KEY FEATURES DESCRIPTION High Responsivity Low Dark Current High Bandwidth Anode/Cathode on Illuminated Side APPLICATIONS S Short Reach Optical Networks S Gigabit Ethernet, Fibre Channel
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MXP7002
125Gbps
MXP7000
850nm
construction of photo diode
MXP7002
PIN PHOTO DIODE
GaAs wafer
850nm Receivers
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Untitled
Abstract: No abstract text available
Text: MXP7002 – 2.5Gbps GaAs PIN Photo Diode OPTO-ELECTRONIC PRODUCTS ENGINEERING SPECIFICATION KEY FEATURES DESCRIPTION High Responsivity Low Dark Current High Bandwidth Anode/Cathode on Illuminated Side APPLICATIONS S Short Reach Optical Networks S Gigabit Ethernet, Fibre Channel
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MXP7002
MXP7000
850nm
850nm
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photo diode
Abstract: MXP4003 photo diode 10 Gbps pin photo diode MXP4000 sdh microsemi photo diode pin 10 Gbps "Photo Diode" construction of photo diode 1550nm 10mW photo diode
Text: MXP4003 – 10 Gbps InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS PRODUCTION DATA SHEET KEY FEATURES DESCRIPTION The MXP4000 series of photo diodes are currently offered in die form allowing manufacturers the versatility of custom assembly configurations.
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MXP4003
MXP4000
1310nm
1550nm
MXP4003
photo diode
photo diode 10 Gbps
pin photo diode
sdh microsemi
photo diode pin 10 Gbps
"Photo Diode"
construction of photo diode
1550nm 10mW photo diode
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TEMD5080
Abstract: No abstract text available
Text: Tem ic TEMD5000 S e m i c o n d u c t o r s Silicon PIN Photodiode Description TEMD5000 is a high speed and high sensitive PIN photo diode in a miniature flat plastic package. Its top view construction makes it ideal as a low cost replacement of TO-5 devices in many applications.
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TEMD5000
TEMD5000
950nt
18-Oct-96
TEMD5080
TEMD5080
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Untitled
Abstract: No abstract text available
Text: Temic TEMD5100 S e m i c o n r i u c t n r s Silicon PIN Photodiode Description T E M D 5 100 is a high speed and high sensitive PIN photo diode in a m iniature flat plastic package. Its top view construction m akes it ideal as a low cost replacem ent of
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TEMD5100
950nm)
18-Oct-96
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