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    CMOS PLD Search Results

    CMOS PLD Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    EP610DI-30 Rochester Electronics LLC UV PLD, 32ns, CMOS, CDIP24, WINDOWED, CERDIP-24 Visit Rochester Electronics LLC Buy
    EP610DC-25 Rochester Electronics LLC UV PLD, 27ns, CMOS, CDIP24, WINDOWED, CERDIP-24 Visit Rochester Electronics LLC Buy
    EP610DC-30 Rochester Electronics LLC UV PLD, 32ns, CMOS, CDIP24, WINDOWED, CERDIP-24 Visit Rochester Electronics LLC Buy
    EP910DI-35 Rochester Electronics LLC UV PLD, 38ns, CMOS, CDIP40, WINDOWED, CERDIP-40 Visit Rochester Electronics LLC Buy
    EP610DC-35 Rochester Electronics LLC UV PLD, 37ns, CMOS, CDIP24, WINDOWED, CERDIP-24 Visit Rochester Electronics LLC Buy

    CMOS PLD Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    CMOS PLD Advanced Micro Devices Selecting the Correct CMOS PLD Original PDF

    CMOS PLD Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    7C322B

    Abstract: PALC22V10B EME-6300H PLDC20G10B PLDC20RA10
    Text: Qualification Report August, 1995 QTP# 94392, Version 1.0 CMOS PLD Marketing Part Description PALC22V10B Reprogrammable CMOS PAL Devic PLDC20G10B CMOS Generic 24-pin Reprogrammable Logic Device PLDC20RA10 Reprogrammable Asynchronous CMOS Logic Device PAL is registered trademark of Monolithic Memories Inc.


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    PDF PALC22V10B PLDC20G10B 24-pin PLDC20RA10 PALC22V10B-JC PALC22V10B-PC -500V 7C322B PALC22V10B EME-6300H PLDC20G10B PLDC20RA10

    PALC22V10B

    Abstract: PALC22V10B-15PC 9439 95287 EME-6300H PLDC20RA10 7C322B 95426 7C322
    Text: Qualification Report June, 1996 QTP# 95287, Version 1.0 CMOS PLD Marketing Part Description PALC22V10/B Reprogrammable CMOS PAL Device PLDC20G10/B CMOS Generic 24-pin Reprogrammable Logic Device PLDC20RA10 Reprogrammable Asynchronous CMOS Logic Device PAL is registered trademark of Monolithic Memories Inc.


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    PDF PALC22V10/B PLDC20G10/B 24-pin PLDC20RA10 PALC22V10-PC PALC22V10B-JC PLD20 PALC22V10B PALC22V10B-15PC 9439 95287 EME-6300H PLDC20RA10 7C322B 95426 7C322

    palce 16v8z amd

    Abstract: 16v8 programming Guide mach 1 family amd palce16v8 programming guide 22v10z 16V8 16V8Z 20RA10 20V8 26V12
    Text: Selecting the Correct CMOS PLD—An Overview of Advanced Micro Devices’ CMOS PLDs Application Note INTRODUCTION The purpose of this application note is to provide a survey of AMD’s CMOS PLDs Programmable Logic Devices . This includes both PAL (Programmable Array


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    PDF

    FAST applications Handbook

    Abstract: 74HC AN-610 CD4000 F100K CD4000 series CMOS Transmission gate Specifications SIGNAL PATH designer
    Text: Fairchild Semiconductor Application Note April 1989 Revised February 2003 Terminations for Advanced CMOS Logic Introduction Advanced CMOS logic such as Fairchild Semiconductor’s FACT Fairchild Advanced CMOS Technology logic, has extended CMOS performance to the level of advanced


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    PDF AN-610 FAST applications Handbook 74HC CD4000 F100K CD4000 series CMOS Transmission gate Specifications SIGNAL PATH designer

    CD4000 series

    Abstract: FAST applications Handbook 74HC AN-610 CD4000 F100K CD4000-SERIES CMOS applications handbook LOW POWER CMOS LOGIC FAMILIES SIGNAL PATH designer
    Text: Fairchild Semiconductor Application Note April 1989 Revised October 2006 Terminations for Advanced CMOS Logic Introduction Advanced CMOS logic such as Fairchild Semiconductor’s FACT Fairchild Advanced CMOS Technology logic, has extended CMOS performance to the level of advanced


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    PDF AN-610 CD4000 series FAST applications Handbook 74HC CD4000 F100K CD4000-SERIES CMOS applications handbook LOW POWER CMOS LOGIC FAMILIES SIGNAL PATH designer

    TIS43

    Abstract: Ck42 32vx10 20RA10 PLC42VA12 PLC42VA12A PLC42VA12FA PLC42VA12N
    Text: Philips Semiconductors Programmable Logic Devices Product specification CMOS programmable multi-function PLD 42 x 105 × 12 DESCRIPTION FEATURES The new PLC42VA12 CMOS PLD from Philips Semiconductors exhibits a unique combination of the two architectural concepts


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    PDF PLC42VA12 PLC42VA12 CONFIGURATIA12 DIN42 NIN42 NTIM42 DTIM42 JKFFPR42 EXOR42 TNOO42 TIS43 Ck42 32vx10 20RA10 PLC42VA12A PLC42VA12FA PLC42VA12N

    20RA10

    Abstract: 20RA10-15 PLDC20RA10
    Text: PLDC20RA10 Reprogrammable Asynchronous CMOS Logic Device — ICC max = 85 mA Military • High reliability — Proven EPROM technology 1PLDC20RA10 Features • • • • • • • • • Advanced-user programmable macrocell CMOS EPROM technology for reprogrammability


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    PDF PLDC20RA10 1PLDC20RA10 PLDC20RA10 20RA10 20RA10-15

    20RA10

    Abstract: 20RA10-15 PLDC20RA10 PLDC20RA10-15JC RA1016 20RA10-25 RA1013
    Text: 0RA10 PLDC20RA10 Reprogrammable Asynchronous CMOS Logic Device — ICC max = 85 mA Military • High reliability — Proven EPROM technology Features • • • • • • • • • Advanced-user programmable macrocell CMOS EPROM technology for reprogrammability


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    PDF 0RA10 PLDC20RA10 20RA10 20RA10-15 PLDC20RA10 PLDC20RA10-15JC RA1016 20RA10-25 RA1013

    Untitled

    Abstract: No abstract text available
    Text: TICPAL22V10Z-25C, TICPAL22V10Z-30I EPIC CMOS PROGRAMMABLE ARRAY LOGIC CIRCUITS SRPS007D D3323, SEPTEMBER 1989 − REVISED DECEMBER 2010 JTL AND NT PACKAGE TOP VIEW 24-Pin Advanced CMOS PLD Virtually Zero Standby Power Variable Product Term Distribution Allows


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    PDF TICPAL22V10Z-25C, TICPAL22V10Z-30I SRPS007D D3323, 24-Pin

    Untitled

    Abstract: No abstract text available
    Text: IMPACT CMOS Base Arrays IMP Array Conversion Technology Introduction Key Features The IMPACT series o f CMOS base arrays is optimized for fast and cost effective conversion to IM P silicon o f FPGAs, PLDs and other vendors’ CMOS gate arrays. With its own on-shore wafer fabrication facility,


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    PDF CMOS-01-9-95

    International CMOS Technology

    Abstract: ICT Peel 82S153 pls153 PEEL18CP210 PHIL18CP210 SIGNETICS* 82S153
    Text: INTERNATIONAL CMOS TEC H N O LO G Y INC. Ti Product Preview December 1986 TM (PII1L18CP210 CMOS Programmable Electrically Erasable Logic Device Features ADVANCED CMOS E2PROM TECHNOLOGY — CMOS: 25mA + .7mA/MHz Max — TTL: 35mA + .7mA/MHz Max HIGH PERFORMANCE


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    PDF PHIL18CP210 PLS153 PEEL18CP210 International CMOS Technology ICT Peel 82S153 pls153 SIGNETICS* 82S153

    Untitled

    Abstract: No abstract text available
    Text: fax id: 6015 PLDC20RA10 CYPRESS Reprogrammable Asynchronous CMOS Logic Device Features Advanced-user programmable macrocell CMOS EPROM technology for reprogrammability Up to 20 input terms 10 programmable I/O macrocells Output macrocell programmable as combinatorial or


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    PDF PLDC20RA10 func24-Lead 300-Mil) 24-Lead

    Untitled

    Abstract: No abstract text available
    Text: lö31t 4Q GGGH2B7 ESI Â G65SC816 CMD Microcircuits CMOS 8/16-Bit Microprocessor Family Features General Description • Advanced CMOS design for low power consumption and increased noise immunity The G65SC802 and G65SC816 are ADV-CMOS ADVanced CMOS) 16bit microprocessors featuring total software compatibility with 8-bit


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    PDF G65SC816 8/16-Bit G65SC802 G65SC816 16bit 16-bit 16-bit

    mach 1 to 5 from amd

    Abstract: mach 3 family amd mach 3 amd mach 3 mach 4 family amd 7466D-1 Simulating MACH Designs mach-355 MACH445 mach 1 to 5 family amd
    Text: Cl CONDENSED Advanced Micro Devices MACH 3 and 4 Device Families High-Density EE CMOS Programmable Logic DISTINCTIVE CHARACTERISTICS • High-performance, high-density electrically-erasable CMOS PLD families ■ Predictable design-independent 12-, 15- and


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    PDF 20-ns mach 1 to 5 from amd mach 3 family amd mach 3 amd mach 3 mach 4 family amd 7466D-1 Simulating MACH Designs mach-355 MACH445 mach 1 to 5 family amd

    PL22V10-10N

    Abstract: PL22V10-10A
    Text: Product specification Philips Semiconductors Programmable Logic Devices CMOS programmable electrically erasable logic device PL22V10-10 FEATURES DESCRIPTION • Advanced CMOS EEPROM technology The Philips Semiconductors PL22V10-10 is a CMOS programmable electrically erasable


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    PDF PL22V10-10 110mA PL22V10-10N PL22V10-10A

    Untitled

    Abstract: No abstract text available
    Text: AIEM&NKgll in te i ¡PLDLV22V10-5 LOW VOLTAGE, ELECTRICALLY ERASABLE 10-MACRQCELL CMOS PLD Low Voltage, Low Current, High Speed Upgrade to BiCMOS/Bipolar 22V10 and CMOS Equivalents 10 Macrocells with Programmable I/O Architecture Registered/ Combinatorial


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    PDF PLDLV22V10-5 10-MACRQCELL 22V10 28-Pin iPLDLV22V10 IPLDLV22V10-5

    Untitled

    Abstract: No abstract text available
    Text: INTERNATIONAL CMOS TECHNOLOGY, INC. PEEL253 CMOS Programmable Electrically Erasable Logic Device Features • ADVANCED CMOS EEPROM TECHNOLOGY ■ FPLA ARCHITECTURE ■ COMPATIBLE PERFORMANCE — tpD = 30ns max, to E = 30ns max SUPERSET REPLACEMENT FOR PLS153


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    PDF PEEL253 PLS153 terms/10

    MACH ONE

    Abstract: mach 1 family amd
    Text: Advanced Micro Devices MACH 3 and 4 Device Families High-Density EE CMOS Programmable Logic DISTINCTIVE CHARACTERISTICS • High-performance, high-density electrically-erasable CMOS PLD families Central, input, and output switch matrices — 100% routability with 80% utilization


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    PDF 20-ns 20-year MACH ONE mach 1 family amd

    TC9803

    Abstract: CK101 TC9801
    Text: TC9803P, TC9803FW TC9803 is a CMOS programmable logic device PLD based on EEPROM cells. Designed using Toshiba's original technology, this device features low power dissipation and inputs that are compatible w ith TTL, NMOS, and CMOS output voltage levels.


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    PDF TC9803P, TC9803FW TC9803 TC9801. CK101 TC9801

    22CV10

    Abstract: No abstract text available
    Text: AMI PEEL 22CV10 Z SEMICONDUCTORS CMOS Programmable Electrically Erasable Logic Device February 1993 Features General Description Advanced CMOS EEPROM Technology The AMI PEEL22CV10(Z) is a CMOS Programmable Electrically Erasable Logic device that provides a highperformance,


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    PDF 22CV10 200jiA PEEL22CV10 PEEL22CVV10 480KH 22CV10CZ)

    20ra10

    Abstract: bc 457 20RA10-15 PLDC20RA10
    Text: PLDC20RA10 CYPRESS Reprogrammable Asynchronous CMOS Logic Device Features • Advanced-user programmable macro­ cell • CMOS EPROM technology for repro­ gram inability • Up to 20 input terms • 10 programmable I/O macrocells • Output macrocell programmable as


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    PDF PLDC20RA10 C20RA10â 35HMB 28-Pin PLDC20RA10â 35LMB 28-Square 35QMB 20ra10 bc 457 20RA10-15 PLDC20RA10

    Untitled

    Abstract: No abstract text available
    Text: fax id: 6014 PLDC20G10B/PLDC20G10 CYPRESS CMOS Generic 24-Pin Reprogrammable Logic Device Features • CMOS EPROM technology for reprogrammabliity • Highly reliable — Uses proven EPROM technology • Fast — Commercial: tPD = 15 ns, tco = 10 ns, ts = 12 ns


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    PDF 12L10, PLDC20G10B/PLDC20G10 24-Pin 24-Lead 300-Mil) 28-Square 28-Lead

    kEJ capacitor

    Abstract: back Tunnel diode
    Text: Inside Vantis' EE CMOS PLD Technology 'V BEYOND PERFORMANCE TECHNOLOGY DESCRIPTION The EE CMOS technology used by Vantis in programmable logic is a single-poly, double- or triple-metal process. It has been optimized for high-speed programmable logic devices, which


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    Untitled

    Abstract: No abstract text available
    Text: September 1994 Preliminary Commercial INC. PEEL 22CV8 -15/-25 CMOS Programmable Electrically Erasable Logic Device Features Low Power Alternative to Standard PLDs — Lower power than quarter-power PALs and GALs — 10mA typical/15mA maximum power CMOS Electrically Erasable Technology


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    PDF 22CV8 typical/15mA 24-pin PEEL18CV8 2400bps,