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    Teledyne e2v CY7C261-35QMB

    PROM, UV ERASABLE, 8K X 8, 35 NS ACCESS - Rail/Tube (Alt: CY7C261-35QMB)
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    Avnet Americas CY7C261-35QMB Tube 250
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    Teledyne e2v CY7C263-35QMB

    PROM, UV ERASABLE, 8K X 8, 35 NS ACCESS - Rail/Tube (Alt: CY7C263-35QMB)
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    Avnet Americas CY7C263-35QMB Tube 250
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    Teledyne e2v CY7C274-35QMB

    PROM, UV ERASABLE, 32K X 8, 35 NS ACCESS - Rail/Tube (Alt: CY7C274-35QMB)
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    Teledyne e2v CY7C271-35QMB

    PROM, UV ERASABLE, 32K X 8, 35 NS ACCESS - Rail/Tube (Alt: CY7C271-35QMB)
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    Teledyne e2v QP7C263-35QMB

    PROM, UV ERASABLE, 8K X 8, 35 NS ACCESS - Rail/Tube (Alt: QP7C263-35QMB)
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    Avnet Americas QP7C263-35QMB Tube 250
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    35QMB Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    H-010

    Abstract: 27H010 CY27H010 h0106 H0108 38-00171-D
    Text: fax id: 3023 1CY 27H0 10 CY27H010 128K x 8 High-Speed CMOS EPROM Features try-standard 32-pin, 600-mil DIP, LCC, PLCC, and TSOP-I packages. These devices offer high-density storage combined with 40-MHz performance. The CY27H010 is available in windowed and opaque packages. Windowed packages allow the device to be erased with UV light for 100% reprogrammability.


    Original     		PDF CY27H010 32-pin, 600-mil 40-MHz CY27H010 32-pin H-010 27H010 h0106 H0108 38-00171-D

    CY7C263-35PC

    Abstract: 7C261 CY7C263 CY7C26345DMB cerdip z PACKAGE 7C264 C261 CY7C261 CY7C264 f1b0
    Text: CY7C261 CY7C263/CY7C264 CYPRESS Features • CMOS for optimum speed/power • Windowed for reprogrammability • High speed — 20 ns commercial — 25 ns (military) • Low power — 660 mW (commercial) — 770 m\V (military) • Super low standby power (7C261)


    OCR Scan     		PDF CY7C261 C263/CY7C264 7C261) 300-mil 600-mil CY7C261, CY7C263, CY7C264 8192-word byGY7C264 CY7C263-35PC 7C261 CY7C263 CY7C26345DMB cerdip z PACKAGE 7C264 C261 f1b0

    Untitled

    Abstract: No abstract text available
    Text: Features 32K x 8 Power-Switched and Reprogrammable PROM • Capable of withstanding > 4001V static discharge • CMOS for optimum speed/power • Windowed for reprogrammability • High speed — 25 ns commercial — 35 ns (military) • Low power — 275 mW (commercial)


    OCR Scan     		PDF 300-mil CY7C271A CY7C271A 768-word 7C271A S50Tbb2 GG1530Q

    CY7C276-25JC

    Abstract: CY7C276 C2768 tCKA
    Text: CY7C276 CYPRESS SEMICONDUCTOR Features • 0.8-micron CMOS for optimum speed/ power • High speed for commercial and military — 25-ns access time • • • • 16-bit-wide words Three programmable chip selects Programmable output enable 44-pin PLCC and 44-pin LCC


    OCR Scan     		PDF CY7C276 25-ns 16-bit-wide 44-pin CY7C276 16K-word 16-bit CY7C276-25JC C2768 tCKA

    CY27H010-45PC

    Abstract: CY27H010-55Wmb 27H010 CY27H010
    Text: CY27H010 « r CYPRESS Features 128K X8 High-Speed CMOS EPROM F unctional D escription • CMOS for optimum speed/power • High speed — t^A — 25 ns max. commercial — *aa — 35 ns max. (military) • Low power — 275 mW max. — Less than 85 mW when deselected


    OCR Scan     		PDF CY27H010 32-pin -32-pin 32-pin, 600-mil CY27H010 ThZ32 CY27H010-45PC CY27H010-55Wmb 27H010

    46E SMD CODE

    Abstract: 7C271 7C274 CY7C271 CY7C274 C2716 RAAW
    Text: MbE » CYPRE SS S EM ICONDUCTOR CYPRESS SEMICONDUCTOR Features • CMOS for optimum speed/power • Windowed for reprogrammability • Highspeed — 30 as commercial — 35 as (military) • Low power — 660 mW (commercial) — 715 mW (military) • Super low standby power


    OCR Scan     		PDF CY7C271 CY7C274 300-mil 7C271) CY7C271 CY7C274 768-word T-46-13-29 46E SMD CODE 7C271 7C274 C2716 RAAW

    27H256

    Abstract: mil std 1275 power supply H-256 H2565
    Text: PRELIMINARY 32K X Features • CMOS for optimum speed/power • High speed — tAA = 25 ns max. commercial — tAA = 35 ns max. (military) • Low power — 275 mW max. — Less than 85 mW when deselected • Byte-wide memory organization • 100% reprogrammable in the


    OCR Scan     		PDF CY27H256 32-pin 28-pin, 600-mil CY27H256 28-pin 27H256 mil std 1275 power supply H-256 H2565

    Untitled

    Abstract: No abstract text available
    Text: V CYPRESS Features 32K X8 High-Speed CMOS EPROM Functional Description rapid transition to and from three-stated outputs. The CY27H256 is a high-perform ance, 256K CM OS E P R O M organized in 32 Kbytes. It is available in industry-standard 28-pin, 600-mil DIP, 32-pin LCC and


    OCR Scan     		PDF CY27H256 28-pin, 600-mil 32-pin 28-pin CY27H256 001S2m

    Untitled

    Abstract: No abstract text available
    Text: CY7C291A CY7C292A/CY7C293A 'W CYPRESS = SEMICONDUCTOR Reprogrammable 2K x 8 PROM Features • Windowed for reprogrammability • CMOS for optimum speed/power • High speed — 2 0 ns commercial — 25 ns (military) • Low power — 660 mW (commercial and military)


    OCR Scan     		PDF CY7C291A CY7C292A/CY7C293A 300-mil 600-mil CY7C291A, CY7C292A, CY7C293A CY7C292Aâ 35DMB CY7C293Aâ

    CERAMIC LEADLESS CHIP CARRIER

    Abstract: la crosse technology smd UJ 99 7C245A CY7C245A 0G152
    Text: W CYPRESS Features • • W indowed for reprogram m ability • C M O S for optim um speed/power • • • H igh speed — 15-ns ad dress set-up • — 10-ns clock to output • Low power — 330 m W com m ercial for —25 ns — 660 mW (m ilitary) •


    OCR Scan     		PDF CY7C245A 15-ns 10-ns 300-mil, 24-pin CY7C245A progra8735 CY7C245Aâ 25LMB CERAMIC LEADLESS CHIP CARRIER la crosse technology smd UJ 99 7C245A 0G152

    7C271

    Abstract: CY7C271-45WMB 333Q C271 7C274 CY7C271 CY7C274 CY7C274-55WC 57C27-1 7C271-55
    Text: CY7C271 CY7C274 32K x 8 PROM PowerSwitched and Reprogrammable Features Functional Description • CMOS for optimum speed/power • Windowed for reprogrammability • High speed — 30 ns commercial — 35 ns (military) • Low power — 660 mW (commercial)


    OCR Scan     		PDF CY7C271 CY7C274 300-mil 7C271) CY7C274 768-word 7C271/7C274 CY7C271 7C271 CY7C271-45WMB 333Q C271 7C274 CY7C274-55WC 57C27-1 7C271-55

    CY7C291A

    Abstract: CY7C292A CY7C293A 57C29
    Text: F# CYPRESS Features • Windowed for reprogrammability • CMOS for optimum speed/power • High speed — 20 ns commercial — 25 ns (military) CY7C291A CY7C292A/CY7C293A 2K X 8 Reprogrammable PROM • Direct replacement for bipolar PROMs • Capable o f withstanding >2001V stat­


    OCR Scan     		PDF CY7C291A CY7C292A/CY7C293A 300-mil 600-mil CY7C291A, CY7C292A, CY7C293A 300-mil 7C291A, 7C293A) CY7C292A 57C29

    7C261

    Abstract: 7c264
    Text: CY7C261 CY7C263/CY7C264 WÈP CYPRESS 8K x 8 Power-Switched and Reprogrammable PROM floating-gate technology and byte-wide in­ telligent programming algorithms. The CY7C261, CY7C263, and CY7C264 are plug-in replacements for bipolar de­ vices and offer the advantages of lower


    OCR Scan     		PDF 7C261) 300-mil 600-mil CY7C261 CY7C263/CY7C264 CY7C261, CY7C263, CY7C264 24-Lead 7C261 7c264

    LC 7258

    Abstract: C-274
    Text: bSE D C Y P R ES S S E M I C O N D U C T O R SSÖRbbE QQ1GS50 T M «CYP CY7C271 CY7C274 CYPRESS SEMICONDUCTOR Features Functional Description • CMOS for optimum speed/power • Windowed for reprogrammability • Highspeed •— 30 ns commercial •— 35 ns (military)


    OCR Scan     		PDF QQ1GS50 CY7C271 CY7C274 300-mil 7C271) LC 7258 C-274

    al p13

    Abstract: CERAMIC LEADLESS CHIP CARRIER cerdip z PACKAGE cy7c291 CY7C293AL-35PC PACKAGE CERAMIC LEADLESS CHIP CARRIER LCC CY7C291A CY7C292A CY7C293A
    Text: CY7C291A CY7C292A/CY7C293A F# CYPRESS Features • Windowed for reprogrammability • CMOS for optimum speed/power • High speed — 20 ns commercial — 25 ns (military) 2K X 8 Reprogrammable PROM • Direct replacement for bipolar PROMs • Capable o f withstanding >2001V stat­


    OCR Scan     		PDF CY7C291A CY7C292A/CY7C293A 300-mil 600-mil CY7C291A, CY7C292A, CY7C293A 35QMB CY7C293A-30WMB CY7C293Aâ al p13 CERAMIC LEADLESS CHIP CARRIER cerdip z PACKAGE cy7c291 CY7C293AL-35PC PACKAGE CERAMIC LEADLESS CHIP CARRIER LCC CY7C292A

    Untitled

    Abstract: No abstract text available
    Text: CY7C243 CY7C244 Er - g 3 CYPRESS Features 4K X 8 Reprogrammable PROM • Capable o f withstanding greater than 2001V static discharge • CMOS for optimum speed/power • TTL-compatible I/O • Windowed for reprogrammability • Direct replacement for bipolar


    OCR Scan     		PDF CY7C243 CY7C244 300-m 600-mil CY7C243 CY7C244 300-mil-wide 600-mil-wide

    lc 245a

    Abstract: DIODE SMD 10 - 25L DIODE SMD 10 25L 7C245A 7c245
    Text: CY7C245A •= CYPRESS • 5V ± 10% V c, commercial and military • I I I.-compatible I/O • Direct replacement for bipolar PROMs • Capable of withstanding greater than 2001V static discharge F e a tu re s • Windowed for reprogrammability • CMOS for optimum speed/power


    OCR Scan     		PDF 15-ns CY7C245A CY7C245A 45KMB 45DMB -450M 7C245A lc 245a DIODE SMD 10 - 25L DIODE SMD 10 25L 7c245

    CY7C263

    Abstract: 7C264 7C261 C261 CY7C261 CY7C264 CY7C263-45WC CY7C264-55 cy7c261-45wmb CY7C264-45WMB
    Text: CY7C261 CY7C263/CY7C264 CYPRESS Features • Capable of withstanding greater than 2001V static discharge • CMOS for optimum speed/power • Windowed for reprogrammability • High speed — 20 ns commercial — 25 ns (military) • Low power — 660 mW (commercial)


    OCR Scan     		PDF CY7C261 C263/CY7C264 7C261) 300-mil 600-mil CY7C261, CY7C263, CY7C264 8192-word 600-M CY7C263 7C264 7C261 C261 CY7C263-45WC CY7C264-55 cy7c261-45wmb CY7C264-45WMB

    Untitled

    Abstract: No abstract text available
    Text: CY7C271 CY7C274 CYPRESS • - = •— SEMICONDUCTOR Features • CMOS for optimum speed/power • Windowed for reprogrammability • High speed — 30 ns commercial — 35 ns (military) • Low power — 660 mW (commercial) — 715 mW (military) • Super low standby power


    OCR Scan     		PDF CY7C271 CY7C274 300-mil 7C271) CY7C271 CY7C274 768-word 7C271/7C274 7C271

    LC 7258

    Abstract: No abstract text available
    Text: CY7C276 CYPRESS SEMICONDUCTOR Features • 0.8-micron CMOS for optimum speed/ power • High speed for commercial and military — 25-ns access time • • • • 16-bit-wide words Three programmable chip selects Programmable output enable 44-pin PLCC and 44-pin LCC


    OCR Scan     		PDF CY7C276 25-ns 16-bit-wide 44-pin CY7C276 CY7C276, 44-Lead LC 7258

    02JX

    Abstract: cy7c291 CY7C291A CY7C292A CY7C293A SMD Code s13 CY7C291A-45DMB CY7C291-35WMB CY7C291-50QMB l64 diode
    Text: Y P R E S S SEMICONDUCTOR 4bE » D S SflU b a 'T^fc-13-Z* CYPRESS SEMICONDUCTOR Features • Windowed for «program m ability • CMOS for optimum speed/power • High speed -¡•20 ns commercial — 25 ns (military) • Low power — 660 mW (commercial and military)


    OCR Scan     		PDF CY7C291A CY7C292A/CY7C293A 300-mil 600-mil CY7C291A, CY7C292A, CY7C293A CY7C291â 50TMB 02JX cy7c291 CY7C291A CY7C292A SMD Code s13 CY7C291A-45DMB CY7C291-35WMB CY7C291-50QMB l64 diode

    H256

    Abstract: CY27H256 2411AS
    Text: Features • CMOS for optimum speed/power • High speed — tAA = 25 ns max. commercial — tAA — 35 ns max. (military) • Low power — 275 mW max. — Less than 85 mW when deselected • Byte-wide memory organization • 100% reprogrammable in the


    OCR Scan     		PDF CY27H256 32-pin -28-pin 28-pin, 600-mil CY27H256 H256 2411AS

    7C293A

    Abstract: 7C291A
    Text: CY7C291A CY7C292A/CY7C293A î f CYPRESS Features • Windowed for reprogrammability • CMOS for optimum speed/power • High speed — 20 ns commercial 2K X 8 Reprogrammable PROM The CY7C291A, CY7C292A, and CY7C293A are plug-in replacem ents for bipolar devices and offer the advantages of


    OCR Scan     		PDF CY7C291A CY7C292A/CY7C293A 300-mil 600-mil CY7C291A, CY7C292A, CY7C293A 7C293A--50WMB 7C293A--50TMB 7C293A--50QMB 7C293A 7C291A

    CY27H010-45PC

    Abstract: 27H010-70 27H010-45 27H010 CY27H010
    Text: ^ 0 CY27H010 CYPRESS Features 128K X8 High-Speed CMOS EPROM F unctional D escription • CMOS for optimum speed/power • High speed — t^A — 25 ns max. commercial — *aa — 35 ns max. (military) • Low power — 275 mW max. — Less than 85 mW when deselected


    OCR Scan     		PDF CY27H010 32-pin -32-pin 32-pin, 600-mil CY27H010â CY27H010-45PC 27H010-70 27H010-45 27H010