Untitled
Abstract: No abstract text available
Text: FLL600IQ-2 rU JII b U L-Band Medium & High Power GaAs FETs FEATURES • • • • • Push-Pull Configuration High Power Output: 60W Typ. High PAE: 43% (Typ.) Broad Frequency Range: 800 to 2000 MHz. Suitable for class AB operation. DESCRIPTION The FLL600IQ-2 is a 60 Watt GaAs FET that employs a push-pull design that
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FLL600IQ-2
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MMBT9012
Abstract: MMBT9013 ,MARKING 12. SOT-23 UTC 225
Text: UTC MMBT9012 PNP EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION FEATURES 2 *High total power dissipation. 625mW *High collector current. (-500mA) *Excellent hFE linearity *Complementary to UTC MMBT9013 1
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MMBT9012
625mW)
-500mA)
MMBT9013
OT-23
QW-R206-020
MMBT9012
MMBT9013
,MARKING 12. SOT-23
UTC 225
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Untitled
Abstract: No abstract text available
Text: UTC MMBT9013 NPN EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION FEATURES 2 *High total power dissipation. 625mW *High collector current. (500mA) *Excellent hFE linearity. *Complementary to UTC MMBT9012 1
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MMBT9013
625mW)
500mA)
MMBT9012
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MMBT9013
Abstract: MMBT9012 MMBT9013L
Text: UTC MMBT9013 NPN EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION FEATURES 2 *High total power dissipation. 625mW *High collector current. (500mA) *Excellent hFE linearity. *Complementary to UTC MMBT9012 1
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MMBT9013
625mW)
500mA)
MMBT9012
OT-23
MMBT9013L
QW-R206-021
MMBT9013
MMBT9012
MMBT9013L
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Untitled
Abstract: No abstract text available
Text: UTC MMBT9012 PNP EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION FEATURES 2 *High total power dissipation. 625mW *High collector current. (-500mA) *Excellent hFE linearity *Complementary to UTC MMBT9013 1
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MMBT9012
625mW)
-500mA)
MMBT9013
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QW-R206-020
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MMBT9013
Abstract: MMBT9012
Text: UNISONIC TECHNOLOGIES CO., MMBT9013 NPN SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION FEATURES *High total Power Dissipation. 625mW *High Collector Current. (500mA) *Excellent hFE linearity. *Complementary to UTC MMBT9012
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MMBT9013
625mW)
500mA)
MMBT9012
MMBT9013L
MMBT9013-x-AE3-R
MMBT9013L-x-AE3-R
OT-23
QW-R206-021
MMBT9013
MMBT9012
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9012 Unisonic
Abstract: 9012L-
Text: UNISONIC TECHNOLOGIES CO., LTD 9012 PNP SILICON EPITAXIAL TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION 1 FEATURES TO-92 *High total power dissipation. 625mW *High collector current. (-500mA) *Excellent hFE linearity
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625mW)
-500mA)
9012L-x-T92-B
9012G-x-T92-B
9012L-x-T92-K
9012G-x-T92-K
QW-R201-0at
QW-R201-029
9012 Unisonic
9012L-
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9013 npn transistor
Abstract: 9012 Unisonic
Text: UNISONIC TECHNOLOGIES CO., LTD 9013 NPN EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION 1 FEATURES TO-92 * High total power dissipation. 625mW * High collector current. (500mA) * Excellent hFE linearity.
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625mW)
500mA)
9013L-x-T92-B
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9013L-x-T92-K
9013G-x-T92-K
QW-R201-030
9013 npn transistor
9012 Unisonic
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mmbt9013
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD MMBT9013 NPN SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION FEATURES *High total Power Dissipation. 625mW *High Collector Current. (500mA) *Excellent hFE linearity. *Complementary to UTC MMBT9012
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MMBT9013
625mW)
500mA)
MMBT9012
MMBT9013-x-AE3-R
MMBT9013L-x-AE3-R
MMBT9013G-x-AE3-R
OT-23
QW-R206-021
mmbt9013
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8050 npn
Abstract: A12 marking 8050 marking transistor
Text: BC548LT1 8050 NPN EPITAXIAL SILICON TRANSISTOR 2W OUTPUT AMPLIFIER OF PORTABLE RADIOS IN CLASS B PUSH-PULL OPERATION * Complement to BC558LT1 * Collector Current :Ic= 500mA * High Total Power Dissipation :Pc=225mW 1. Rating 2.9 1.9 0.95 0.95 Symbo Unit 0.4
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BC548LT1
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500mA
225mW
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062in
300uS
8050 npn
A12 marking
8050 marking transistor
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MMBT8550LT1
Abstract: MMBT8550
Text: MMBT8550LT1 PNP EPITAXIAL SILICON TRANSISTOR SOT-23 3 2W OUTPUT AMPLIFIER OF PORTABLE 1 RADIOS IN CLASS B PUSH-PULL OPERATION 2 Complement to MMPT8050LT1 Collector-current:Ic=-500mA High Total Power Dissipation:Pc=225mW 1. 1.BASE 2.EMITTER 3.COLLECTOR 0.4
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225mW
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marking y1 sot-23
Abstract: SS8550LT1 Y1 SS8050LT1 amplifier 800mA
Text: SS8050LT1 SEMICONDUCTOR TECHNICAL DATA 2W OUTPUT AMPLIFIER OF PORTABLE RADIOS IN CLASS B PUSH-PULL OPERATION * Complement to SS8550LT1 * Collector Current :Ic= 800mA * High Total Power Dissipation :Pc=625mW ABSOLUTE MAXIMUM RATINGS at Ta=25℃ NPN EPITAXIAL SILICON TRANSISTOR
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800mA
625mW
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800mA
30MHz
marking y1 sot-23
SS8550LT1 Y1
SS8050LT1
amplifier 800mA
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Untitled
Abstract: No abstract text available
Text: PJ2N9013 NPN Epitaxial Silicon Transistor 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION • • • • High total power dissipation PT=625mW High collector Current (Ic=500mA) Complementary to PJ2N9012 Excellent hEF Linearity TO-92
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625mW)
500mA)
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9013 transistor
Abstract: Transistor-9013 h UTC 9013 9013 NPN Transistor
Text: UTC 9013 NPN EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION FEATURES *High total power dissipation. 625mW *High collector current. (500mA) *Excellent hFE linearity. *Complementary to UTC 9012 1 TO-92 1: EMITTER
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500mA)
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UTC 9013
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PNP 9012
Abstract: IC 9012 9012 pnp 9012 pnp transistor 9012 PDF IC 9012 transistors equivalent 9012
Text: BC558LT1 9012 PNP EPITAXIAL SILICON TRANSISTOR 2W OUTPUT AMPLIFIER OF PORTABLE RADIOS IN CLASS B PUSH-PULL OPERATION * Complement to BC548LT1 * Collector Current :Ic= -500mA * High Total Power Dissipation :Pc=225mW 1. 2.4 1.3 ABSOLUTE MAXIMUM RATINGS at Ta=25
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-500mA
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IC 9012
9012 pnp
9012 pnp transistor
9012
PDF IC 9012
transistors equivalent 9012
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Untitled
Abstract: No abstract text available
Text: SS9013 NPN EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION. TO-92 • High total power dissipation. PT=625mW • High Collector Current. (IC=500mA) • Complementary to SS9012 • Excellent hFE linearity.
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625mW)
500mA)
SS9012
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9013 npn
Abstract: NPN 9013 transistor c 9013 9013 npn transistor 9013G C 9013 transistor transistor 9013 9013 NPN Output Transistor IC 9013 transistor 9013 H NPN
Text: UNISONIC TECHNOLOGIES CO., LTD 9013 NPN EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION FEATURES 1 * High total power dissipation. 625mW * High collector current. (500mA) * Excellent hFE linearity. * Complementary to UTC 9012
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500mA)
9013-x-T92-B
9013L-x-T92-B
9013G-x-T92-B
9013-x-T92-K
9013L-x-T92-K
9013G-x-T92-K
9013-x-T92-R
9013L-x-T92-R
9013 npn
NPN 9013
transistor c 9013
9013 npn transistor
9013G
C 9013 transistor
transistor 9013
9013 NPN Output Transistor
IC 9013
transistor 9013 H NPN
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MMBT9012G
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD MMBT9012 NPN SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION 3 FEATURES 2 *High total power dissipation. 625mW *High collector current. (-500mA) *Excellent hFE linearity *Complementary to UTC MMBT9013
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625mW)
-500mA)
MMBT9013
OT-23
O-236)
MMBT9012G-x-AE3-R
QW-R206-020
MMBT9012G
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SS9012
Abstract: SS9013 PT-625mW
Text: SS9012 PNP EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION. TO-92 • High total power dissipation. PT=625mW • High Collector Current. (IC= -500mA) • Complementary to SS9013 • Excelent hFE linearity.
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625mW)
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PT-625mW
Abstract: No abstract text available
Text: PJ2N9013 NPN Epitaxial Silicon Transistor 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION TO-92 • High total power dissipation PT=625mW • High collector Current (Ic=500mA) • Complementary to PJ2N9012 • Excellent hEF Linearity
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625mW)
500mA)
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PJ2N9013CX
OT-23
500mA
500mA
PT-625mW
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SS9012
Abstract: No abstract text available
Text: SS9012 PNP EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION. TO-92 • High total power dissipation. PT=625mW • High Collector Current. (IC= -500mA) • Complementary to SS9013 • Excellent hFE linearity.
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625mW)
-500mA)
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SS850
Abstract: amplifier 800mA SS8550LT1 Y2 TRANSISTOR
Text: SS8550LT1 SEMICONDUCTOR TECHNICAL DATA 2W OUTPUT AMPLIFIER OF PORTABLE RADIOS IN CLASS B PUSH-PULL OPERATION * Complement to SS8050LT1 * Collector Current :Ic= -800mA * High Total Power Dissipation :Pc=625mW ABSOLUTE MAXIMUM RATINGS at Ta=25℃ PNP EPITAXIAL SILICON TRANSISTOR
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-800mA
625mW
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800mA
-800mA
-80mA
SS850
amplifier 800mA
SS8550LT1
Y2 TRANSISTOR
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Untitled
Abstract: No abstract text available
Text: | FORWARD INTERNATIONAL ELECTRONICS LID. S9013 SEMICONDUCTOR TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF PORTABLE RADIOS IN CLASS B PUSH-PULL OPERATION. Package: TO-92 * Complement to S9012 * Collector Current: Ic=500mA * High Total Power Dissipation: ptH>25mW
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Untitled
Abstract: No abstract text available
Text: 2SA1298LT1 PNP EPITAXIAL SILICON TRANSISTOR SOT-23 3 2W OUTPUT AMPLIFIER OF PORTABLE 1 RADIOS IN CLASS B PUSH-PULL OPERATION 2 Complement to MMPT2SC3265LT1 1. 1.BASE 2.EMITTER 3.COLLECTOR Collector-current:Ic=-500mA High Total Power Dissipation:Pc=225mW 0.4
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-500mA,
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