Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors SS8050LT1 TRANSISTOR NPN SOT-323 FEATURES 1. BASE 2. EMITTER W (Tamb=25℃) 1. 30¡ À0. 03 Collector current 1.5 A ICM: Collector-base voltage 40 V V(BR)CBO: Operating and storage junction temperature range
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OT-323
SS8050LT1
OT-323
100mA
800mA
800mA,
30MHz
SS8050LT1
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Untitled
Abstract: No abstract text available
Text: SS8050LT1 NPN 3 * “G” Lead Pb -Free 1 2 SOT-23 V CEO Value 25 40 6.0 1500 625 5.0 200 SS8050LT1=Y1 25 0.1 40 100 6.0 100 E=20 Vdc, I E= 0 ) 40 5.0 WEITRON http://www.weitron.com.tw O 0.1 u 0.1 u 0.1 u SS8050LT1 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)
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SS8050LT1
OT-23
SS8050LT1
80mAdc)
OT-23
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Untitled
Abstract: No abstract text available
Text: SS8050LT1 NPN 3 1 2 SOT-23 V CEO Value 25 40 6.0 1500 625 5.0 200 SS8050LT1=Y1 25 0.1 40 100 6.0 100 E=20 Vdc, I E= 0 40 5.0 WEITRON http://www.weitron.com.tw O 0.1 u 0.1 u 0.1 u SS8050LT1 ELECTRICAL CHARACTERISTICS TA=25 C unless otherwise noted) (Countinued)
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SS8050LT1
OT-23
SS8050LT1
80mAdc)
OT-23
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SS850
Abstract: amplifier 800mA SS8550LT1 Y2 TRANSISTOR
Text: SS8550LT1 SEMICONDUCTOR TECHNICAL DATA 2W OUTPUT AMPLIFIER OF PORTABLE RADIOS IN CLASS B PUSH-PULL OPERATION * Complement to SS8050LT1 * Collector Current :Ic= -800mA * High Total Power Dissipation :Pc=625mW ABSOLUTE MAXIMUM RATINGS at Ta=25℃ PNP EPITAXIAL SILICON TRANSISTOR
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SS8550LT1
SS8050LT1
-800mA
625mW
OT-23
100mA
800mA
-800mA
-80mA
SS850
amplifier 800mA
SS8550LT1
Y2 TRANSISTOR
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SS8050LT
Abstract: 8050LT1
Text: DONGGUAN FORWARD SEMICONDUCTOR CO.,LTD SOT-23 Plastic-Encapsulate Transistors SS8050LT1 TRANSISTOR NPN FEATURES Power dissipation PCM: W(Tamb=25℃) 0.3 Collector current ICM: 1.5 A 40 V Collector-base voltage V(BR)CBO: Operating and storage junction temperature range
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OT-23
SS8050LT1
100mA
800mA
30MHZ
8050LT1
SS8050LT
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SS8050LT1
Abstract: marking H
Text: SS8050LT1 SS8050LT1 TRANSISTOR NPN FEATURES SOT-323 1. 25¡ À0. 05 Power dissipation 1. 01 REF 1. BASE 2. EMITTER 3. COLLECTOR W (Tamb=25℃) 2. 30¡ À0. 05 1. 30¡ À0. 03 Collector current ICM: 1.5 A Collector-base voltage 40 V V(BR)CBO: Operating and storage junction temperature range
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SS8050LT1
OT-323
100mA
800mA
800mA,
30MHz
SS8050LT1
marking H
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PDF
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IC800
Abstract: y1 npn SS8050LT1
Text: SS8050LT1 NPN General Purpose Transistors 3 P b Lead Pb -Free 1 2 SOT-23 V CEO Value 25 40 6.0 1500 625 5.0 200 SS8050LT1=Y1 25 0.1 40 100 6.0 100 E=20 Vdc, I E= 0 40 5.0 WEITRON http://www.weitron.com.tw ) O 0.1 u 0.1 u 0.1 u SS8050LT1 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)
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SS8050LT1
OT-23
SS8050LT1
80mAdc)
OT-23
IC800
y1 npn
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marking y1 sot-23
Abstract: SS8550LT1 Y1 SS8050LT1 amplifier 800mA
Text: SS8050LT1 SEMICONDUCTOR TECHNICAL DATA 2W OUTPUT AMPLIFIER OF PORTABLE RADIOS IN CLASS B PUSH-PULL OPERATION * Complement to SS8550LT1 * Collector Current :Ic= 800mA * High Total Power Dissipation :Pc=625mW ABSOLUTE MAXIMUM RATINGS at Ta=25℃ NPN EPITAXIAL SILICON TRANSISTOR
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SS8050LT1
SS8550LT1
800mA
625mW
OT-23
100mA
800mA
30MHz
marking y1 sot-23
SS8550LT1 Y1
SS8050LT1
amplifier 800mA
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sot-23 Marking 1Hc
Abstract: SOT-23 1HC
Text: SS8050LT1 NPN General Purpose Transistors 3 P b Lead Pb -Free 1 2 SOT-23 V CEO Value 25 40 5.0 1500 300 2.4 417 25 0.1 40 100 5.0 100 35 4.0 WEITRON http://www.weitron.com.tw 1/2 0.15 u 0.15 u 27-Jul-2012 SS8050LT1 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)
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SS8050LT1
OT-23
27-Jul-2012
80mAdc)
OT-23
sot-23 Marking 1Hc
SOT-23 1HC
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sot-23 Marking 1Hc
Abstract: TOP marking 1HC marking 1Hc SS8050LT1 SOT-23 1HC
Text: SS8050LT1 NPN General Purpose Transistors 3 P b Lead Pb -Free 1 2 SOT-23 V CEO Value 25 40 5.0 1500 300 2.4 417 25 0.1 40 100 5.0 100 O E=20 Vdc, I E= 0 ) 35 4.0 WEITRON http://www.weitron.com.tw 1/4 0.15 u 0.15 u 0.15 u Rev.A 10-Apr-09 SS8050LT1 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)
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SS8050LT1
OT-23
10-Apr-09
80mAdc)
OT-23
sot-23 Marking 1Hc
TOP marking 1HC
marking 1Hc
SS8050LT1
SOT-23 1HC
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Y1 SOT-23
Abstract: marking y1 sot-23 8050LT1 marking Y1 sot23 y1 SOT23 Y1 marking transistor sot23 Y1 TRANSISTOR MARKING SOT23 5 8050L SS8050LT1 MARKING E1 SOT23 TRANSISTOR
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors SOT—23 SS8050LT1 TRANSISTOR（ NPN ） 1. BASE 2. EMITTER 3. COLLECTOR FEATURES １．０ Power dissipation PCM : 0.3 W（Tamb=25℃） Collector current ICM : 1.5 A
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OT-23
OT--23
SS8050LT1
8050LT1
037TPY
950TPY
550REF
022REF
Y1 SOT-23
marking y1 sot-23
marking Y1 sot23
y1 SOT23
Y1 marking transistor sot23
Y1 TRANSISTOR MARKING SOT23 5
8050L
SS8050LT1
MARKING E1 SOT23 TRANSISTOR
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Transistor S8550 2TY
Abstract: Schottky barrier sot-23 Marking s4 sk 8050s KL4 SOT-23 d882 to-92 BR S8050 bq d882 transistor D882 datasheet S8050 equivalent PCR100-6
Text: DIODES IN SOD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W B5817W B5818W B5819W BAT42W BAT43W BAT46W* BAV16W BAV19W BAV20W BAV21W SD101AW* SD101BW* SD101CW* SD103AW SD103BW SD103CW PD VR V IFM(mA) IR( A) (mW) 350 75 350 75 250
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OD-123
1N4148W
1N4448W
1N5711W*
1N6263W*
B0520LW
B0530W
B0540W
B5817W
B5818W
Transistor S8550 2TY
Schottky barrier sot-23 Marking s4
sk 8050s
KL4 SOT-23
d882 to-92
BR S8050
bq d882
transistor D882 datasheet
S8050 equivalent
PCR100-6
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Y2 transistor
Abstract: Transistor S8550 2TY bq d882 transistor bc547 bk 045 transistor D882 datasheet Z1 Transistor TRANSISTOR MARK AQY S8050 equivalent K596-B sot 89 D882
Text: >>JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD. >>Tel: 86-510-6852812*12 >>Fax: 86-510-6858792 >>http://www.cj-elec.com >>http://www.globalsources.com/cjet.co >>Email:huaxing20@hotmail.com huaxing20@sohu.com >> Huaxing Lee DIODES IN SOD-123
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huaxing20
OD-123
1N4148W
1N4448W
1N5711W*
1N6263W*
B0520LW
B0530W
B0540W
Y2 transistor
Transistor S8550 2TY
bq d882
transistor bc547 bk 045
transistor D882 datasheet
Z1 Transistor
TRANSISTOR MARK AQY
S8050 equivalent
K596-B
sot 89 D882
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AZD074
Abstract: No abstract text available
Text: IQ Switch ProxSense® Series Application Note: AZD074 How to design a $3.50* educational touch toy IQ Switch®- ProxSense® Series 1 Introduction Capacitive touch keys provide robustness and flexibility to a cost-effective educational toy. Touch keys will withstand the „abuse‟ inflicted
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AZD074
IQS550,
AZD074:
AZD074
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