sot-23 Marking 1HD
Abstract: TOP marking 1HD SOT-23 1HD 1hb marking SS8550LT1
Text: SS8550LT1 PNP General Purpose Transistors 3 P b Lead Pb -Free 1 2 SOT-23 VCEO Value -25 -40 -5.0 -1500 300 2.4 417 -25 -0.1 -40 -100 -5.0 -100 O E=-20Vdc, I E= 0) -40 -5.0 WEITRON http://www.weitron.com.tw 1/4 -0.15 u -0.15 u -0.15 u Rev.A 10-Apr-09 SS8550LT1
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SS8550LT1
OT-23
-20Vdc,
10-Apr-09
-80mAdc)
OT-23
sot-23 Marking 1HD
TOP marking 1HD
SOT-23 1HD
1hb marking
SS8550LT1
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PDF
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sot-23 Marking 1HD
Abstract: No abstract text available
Text: SS8550LT1 PNP General Purpose Transistors 3 P b Lead Pb -Free 1 2 SOT-23 VCEO Value -25 -40 -5.0 -1500 300 2.4 417 -25 -0.1 -40 -100 -5.0 -100 -40 -5.0 WEITRON http://www.weitron.com.tw 1/2 -0.15 u -0.15 u 27-Jul-2012 SS8550LT1 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)
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SS8550LT1
OT-23
27-Jul-2012
-80mAdc)
OT-23
sot-23 Marking 1HD
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PDF
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Untitled
Abstract: No abstract text available
Text: SS8550LT1 PNP 3 * “G” Lead Pb -Free 1 2 SOT-23 VCEO Value -25 -40 -6.0 -1500 625 5.0 200 SS8550LT1=Y2 -25 -0.1 -40 -100 -6.0 -100 E=-20Vdc, I E= 0 ) -40 -5.0 WEITRON http://www.weitron.com.tw O -0.1 u -0.1 u -0.1 u SS8550LT1 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)
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SS8550LT1
OT-23
SS8550LT1
-20Vdc,
-80mAdc)
OT-23
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PDF
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ss8550
Abstract: SS8550LT1
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors SOT—23 SS8550LT1 TRANSISTOR（ PNP ） 1. BASE 2. EMITTER 3. COLLECTOR １．０ FEATURES Power dissipation PCM : 0.3 W（Tamb=25℃） Collector current ICM : -1.5
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OT-23
OT--23
SS8550LT1
SS8550LT1
037TPY
950TPY
550REF
022REF
ss8550
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PDF
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SS850
Abstract: amplifier 800mA SS8550LT1 Y2 TRANSISTOR
Text: SS8550LT1 SEMICONDUCTOR TECHNICAL DATA 2W OUTPUT AMPLIFIER OF PORTABLE RADIOS IN CLASS B PUSH-PULL OPERATION * Complement to SS8050LT1 * Collector Current :Ic= -800mA * High Total Power Dissipation :Pc=625mW ABSOLUTE MAXIMUM RATINGS at Ta=25℃ PNP EPITAXIAL SILICON TRANSISTOR
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SS8550LT1
SS8050LT1
-800mA
625mW
OT-23
100mA
800mA
-800mA
-80mA
SS850
amplifier 800mA
SS8550LT1
Y2 TRANSISTOR
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PDF
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marking y1 sot-23
Abstract: SS8550LT1 Y1 SS8050LT1 amplifier 800mA
Text: SS8050LT1 SEMICONDUCTOR TECHNICAL DATA 2W OUTPUT AMPLIFIER OF PORTABLE RADIOS IN CLASS B PUSH-PULL OPERATION * Complement to SS8550LT1 * Collector Current :Ic= 800mA * High Total Power Dissipation :Pc=625mW ABSOLUTE MAXIMUM RATINGS at Ta=25℃ NPN EPITAXIAL SILICON TRANSISTOR
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SS8050LT1
SS8550LT1
800mA
625mW
OT-23
100mA
800mA
30MHz
marking y1 sot-23
SS8550LT1 Y1
SS8050LT1
amplifier 800mA
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PDF
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Y2 SOT-23
Abstract: SS8550LT1 IC800
Text: SS8550LT1 PNP General Purpose Transistors 3 P b Lead Pb -Free 1 2 SOT-23 VCEO Value -25 -40 -6.0 -1500 625 5.0 200 SS8550LT1=Y2 -25 -0.1 -40 -100 -6.0 -100 E=-20Vdc, I E= 0 -40 -5.0 WEITRON http://www.weitron.com.tw ) O -0.1 u -0.1 u -0.1 u SS8550LT1 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)
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SS8550LT1
OT-23
SS8550LT1
-20Vdc,
-80mAdc)
-80010V
OT-23
Y2 SOT-23
IC800
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PDF
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors SS8550LT1 TRANSISTOR PNP SOT-323 FEATURES Power dissipation 1. BASE 2. EMITTER 1. 25¡ À0. 05 W (Tamb=25℃) 2. 30¡ À0. 05 1. 30¡ À0. 03 Collector current -1.5
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OT-323
SS8550LT1
OT-323
-100mA
-800mA
-800mA,
-80mA
-50mA
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PDF
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Y2 TRANSISTOR
Abstract: SS8550LT1
Text: SS8550LT1 SS8550LT1 TRANSISTOR PNP SOT-323 FEATURES Power dissipation 1. BASE 2. EMITTER 1. 25¡ À0. 05 W (Tamb=25℃) 2. 30¡ À0. 05 1. 30¡ À0. 03 Collector current ICM: -1.5 A Collector-base voltage -40 V V(BR)CBO: Operating and storage junction temperature range
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SS8550LT1
OT-323
-55to
-100mA
-800mA
-800mA,
-80mA
Y2 TRANSISTOR
SS8550LT1
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PDF
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Untitled
Abstract: No abstract text available
Text: DONGGUAN FORWARD SEMICONDUCTOR CO.,LTD SOT-23 Plastic-Encapsulate Transistors SS8550LT1 TRANSISTOR PNP FEATURES Power dissipation PCM: 0.3 Collector current ICM: -1.5 W(Tamb=25℃) A Collector-base voltage V(BR)CBO: V -40 Operating and storage junction temperature range
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OT-23
SS8550LT1
-100mA
-800mA
-80mA
-50mA
30MHz
SS8550LT1
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PDF
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Transistor S8550 2TY
Abstract: Schottky barrier sot-23 Marking s4 sk 8050s KL4 SOT-23 d882 to-92 BR S8050 bq d882 transistor D882 datasheet S8050 equivalent PCR100-6
Text: DIODES IN SOD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W B5817W B5818W B5819W BAT42W BAT43W BAT46W* BAV16W BAV19W BAV20W BAV21W SD101AW* SD101BW* SD101CW* SD103AW SD103BW SD103CW PD VR V IFM(mA) IR( A) (mW) 350 75 350 75 250
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OD-123
1N4148W
1N4448W
1N5711W*
1N6263W*
B0520LW
B0530W
B0540W
B5817W
B5818W
Transistor S8550 2TY
Schottky barrier sot-23 Marking s4
sk 8050s
KL4 SOT-23
d882 to-92
BR S8050
bq d882
transistor D882 datasheet
S8050 equivalent
PCR100-6
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PDF
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Y2 transistor
Abstract: Transistor S8550 2TY bq d882 transistor bc547 bk 045 transistor D882 datasheet Z1 Transistor TRANSISTOR MARK AQY S8050 equivalent K596-B sot 89 D882
Text: >>JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD. >>Tel: 86-510-6852812*12 >>Fax: 86-510-6858792 >>http://www.cj-elec.com >>http://www.globalsources.com/cjet.co >>Email:huaxing20@hotmail.com huaxing20@sohu.com >> Huaxing Lee DIODES IN SOD-123
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huaxing20
OD-123
1N4148W
1N4448W
1N5711W*
1N6263W*
B0520LW
B0530W
B0540W
Y2 transistor
Transistor S8550 2TY
bq d882
transistor bc547 bk 045
transistor D882 datasheet
Z1 Transistor
TRANSISTOR MARK AQY
S8050 equivalent
K596-B
sot 89 D882
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PDF
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s 8550 d
Abstract: s8550LT1 8550 sot-23 pnp SS8550LT1 SS8550
Text: MC C SOT-23 P la s tic -E n c a p s u la te T ra n s is to rs ^ ^ 1.BASE 2.EMITTER 3.COLLECTOR S S 8550LT 1 TR A N S IS TO R PNP 7T oi FEATURES '¿ r Power dissipation PCM: 0.625 W CTamb=25T ) Collector current ICM: -1.5 A Collector-base voltage V(BR)CBo:-40V
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OCR Scan
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OT-23
8550LT
SS8550LT1
s 8550 d
s8550LT1
8550 sot-23 pnp
SS8550LT1
SS8550
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PDF
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