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    CGH0912 Price and Stock

    MACOM CGH09120F

    RF MOSFET HEMT 28V 440095
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CGH09120F Tray 176 1
    • 1 $232.31
    • 10 $232.31
    • 100 $232.31
    • 1000 $232.31
    • 10000 $232.31
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    Mouser Electronics CGH09120F 40
    • 1 $321.56
    • 10 $321.56
    • 100 $321.56
    • 1000 $321.56
    • 10000 $321.56
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    Richardson RFPD CGH09120F 1
    • 1 $466.66
    • 10 $466.66
    • 100 $466.66
    • 1000 $466.66
    • 10000 $466.66
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    CGH0912 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    CGH09120F Cree/Wolfspeed Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - RF MOSFET HEMT 28V 440095 Original PDF

    CGH0912 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    cgh09120f

    Abstract: ATC 600F lk 3058 3019 Transistor LTE AMPLIFIER
    Text: CGH09120F 120 W, UHF - 2.5 GHz, GaN HEMT for WCDMA, LTE, MC-GSM Cree’s CGH09120F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH09120F ideal for MC-GSM, WCDMA and LTE


    Original     		PDF CGH09120F CGH09120F CGH0912 CGH09120F-TB ATC 600F lk 3058 3019 Transistor LTE AMPLIFIER

    ATC600S

    Abstract: RO4003 CAP 0805 ATC 600F ATC 600F CGH0912 CGH09120F CGH09120F-TB JESD22 68-pF j 182
    Text: CGH09120F 120 W, UHF - 2.5 GHz, GaN HEMT for WCDMA, LTE, MC-GSM Cree’s CGH09120F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH09120F ideal for MC-GSM, WCDMA and LTE


    Original     		PDF CGH09120F CGH09120F CGH0912 ATC600S RO4003 CAP 0805 ATC 600F ATC 600F CGH0912 CGH09120F-TB JESD22 68-pF j 182

    cgh09120f

    Abstract: 3019 Transistor Ro4003
    Text: CGH09120F 120 W, UHF - 2.5 GHz, GaN HEMT for WCDMA, LTE, MC-GSM Cree’s CGH09120F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH09120F ideal for MC-GSM, WCDMA and LTE


    Original     		PDF CGH09120F CGH09120F CGH0912 CGH09120F-TB 3019 Transistor Ro4003

    Untitled

    Abstract: No abstract text available
    Text: CGH09120F 120 W, UHF - 2.5 GHz, GaN HEMT for WCDMA, LTE, MC-GSM Cree’s CGH09120F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH09120F ideal for MC-GSM, WCDMA and LTE


    Original     		PDF CGH09120F CGH09120F CGH0912

    ATC600S

    Abstract: 8029 l2 circuit CAP 0805 ATC 600F 8029 l2 CGH0912 CGH09120F CGH09120F-TB RO4003 amplifier TRANSISTOR 12 GHZ
    Text: PRELIMINARY CGH09120F 120 W, UHF - 2.5 GHz, GaN HEMT for WCDMA, LTE, MC-GSM Cree’s CGH09120F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH09120F ideal for MC-GSM, WCDMA and LTE


    Original     		PDF CGH09120F CGH09120F CGH0912 ATC600S 8029 l2 circuit CAP 0805 ATC 600F 8029 l2 CGH0912 CGH09120F-TB RO4003 amplifier TRANSISTOR 12 GHZ

    CGH09120F

    Abstract: CGH25120F CDPA21480 CGH27060F ofdm predistortion CGH55030F 440117 CGH21120F CGH21240F CGH27015F
    Text: Gallium Nitride GaN HEMT Transistors for BTS Applications Cree’s Doherty CDPA21480, performance. CGH21240F demonstration provides amplifier innovative The amplifier devices with uses digital two CDPA21480 Spectrum at 2.11, 2.14 & 2.17 GHz PAVE = 49 dBm, 2-Carrier WCDMA, PAR = 7.5 dB with CFR


    Original     		PDF CDPA21480, CGH21240F CDPA21480 CGH09120F CGH25120F CGH27060F ofdm predistortion CGH55030F 440117 CGH21120F CGH21240F CGH27015F