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    CF739 R Search Results

    CF739 R Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    BUZ90af

    Abstract: hv82 MGF4919G-01 MGF4919G MGF2407A-01 BUZ80AF1 6n60 MGF1302-15 SSP 50N06 2n10l
    Text: МИКРОСХЕМЫ 1 ПОЛЕВЫЕ ТРАНЗИСТОРЫ ИМПОРТНЫЕ Наименование 2SJ 103 2SJ 200 2SJ 306 2SJ 307 2SJ 449 2SJ 79 2SK 1023 2SK 1058 2SK 1060 2SK 107 2SK 1082 2SK 1102 2SK 1117 2SK 1118 2SK 1120 2SK 1162 2SK 118 2SK 1198


    Original
    O-251AA O-247AC O-220AB PowerSO-20 BUZ90af hv82 MGF4919G-01 MGF4919G MGF2407A-01 BUZ80AF1 6n60 MGF1302-15 SSP 50N06 2n10l PDF

    CF739 R

    Abstract: CF739 siemens gaas fet
    Text: 32E D • 023ti3SQ 0G17342 1 H S I P GaAsFET SIEMENS/ SPCL*. SEMICONDS CF739 T 'S I- a S ' • N-channel dual-gate GaAs MES FET • Depletion mode transistor for tuned small-signal applications up to 2 GHz, e. g. VHF, UHF, Sat-TV tuners • Low noise • High gain


    OCR Scan
    023ti3SQ 0G17342 CF739 00MHz 23b32ü Q017347 CF739 CF739 R siemens gaas fet PDF

    BF963

    Abstract: BF544 BF930 BF987 triode sot23 gaasfets cLY2 BF965 CFY30 cly5
    Text: Microwave, RF & Tuner Transistors For complete package outlines, refer to pages PO-1 through PO-6 MOS Field Effect Transistors M axim um Ratings Characteristics T.=25°C NF mW G ps dB dB 40 50 30 30 30 30 30 10 10 200 200 200 200 200 200 200 200 200 29 25


    OCR Scan
    BF930 BF993 BF994S BF995 BF996S BF997 BF998 BF1005 BF1012 BF543 BF963 BF544 BF987 triode sot23 gaasfets cLY2 BF965 CFY30 cly5 PDF

    CFY19-22

    Abstract: CFY19 Dual-Gate* bf981 bf987
    Text: "sIEMENS AKTIENGESELLSCHAF bOE I> • SEBSbDS DDS1M7M S34 «SIEfi 'T'dó'M SIEMENS Transistoren Transistors MOS Feldeffekt-Transistoren Type MOS Field-Effect Transistors Maximum Ratings Characteristics TA= 25° C ^ds V ¡d mA P,o. G ps mW dB ' * I' c' ' '


    OCR Scan
    BF930 BF994S BF996S BF998 BF1012 CF739 CF750 OT-143 CFY19-18 CFY19-22 CFY19 Dual-Gate* bf981 bf987 PDF

    CF739

    Abstract: 7S66 1 928 300 599 marking MS "marking ms"
    Text: SIEMENS GaAs FET CF 739 Features • N-channel dual-gate GaAs MES FET • Depletion mode transistor for tuned small-signal applications up to 2 GHz, e. g. VHF, UHF, Sat-TV tuners • Low noise • High gain • Low input capacitance ESD: Electrostatic discharge sensitive device, observe handling precautions!


    OCR Scan
    Q62702-F1215 OT-143 CF739 7S66 1 928 300 599 marking MS "marking ms" PDF