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    CERTIFICATE OF COMPLIANCE JANTX Search Results

    CERTIFICATE OF COMPLIANCE JANTX Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    SF-SFP28LPB1W-3DB Amphenol Cables on Demand Amphenol SF-SFP28LPB1W-3DB SFP28 Loopback Adapter Module for SFP28 Port Compliance Testing - 3dB Attenuation & 1W Power Consumption Datasheet
    SF-SFPPLOOPBK-003.5 Amphenol Cables on Demand Amphenol SF-SFPPLOOPBK-003.5 SFP+ Loopback Adapter Module for SFP+ Port Compliance Testing - 3.5dB Copper/Optical Cable Emulation Datasheet
    SF-SFP28LPB1W-0DB Amphenol Cables on Demand Amphenol SF-SFP28LPB1W-0DB SFP28 Loopback Adapter Module for SFP28 Port Compliance Testing - 0dB Attenuation & 1W Power Consumption Datasheet
    SF-SFPPLOOPBK-0DB Amphenol Cables on Demand Amphenol SF-SFPPLOOPBK-0DB SFP+ Loopback Adapter Module for SFP+ Port Compliance Testing - 0dB Attenuation & 0W Power Consumption Datasheet
    BQ24180YFFT Texas Instruments Fully Integrated Switch-Mode 1-Cell Li-Ion Charger with Full USB Compliance 25-DSBGA Visit Texas Instruments

    CERTIFICATE OF COMPLIANCE JANTX Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    JANTX1N5719

    Abstract: 01038-1N5719TX C68001 1N5719 equivalent MA1N5719HX 1N4456 96341 HP JANTX1N5719 MA1N5719 C-68001
    Text: REVISIONS LTR DESCRIPTION DATE Page 3, paragraph 3.5 marking. Page 9, added vendor part number reference to paragraph 6.5. Update lead finish, manufacturer information, editorial and format changes. A B APPROVED 8 April 2002 Thomas M. Hess 18 August 2008 Thomas M. Hess


    Original     		PDF MIL-PRF-19500/443 037Z3 JANTX1N5719 01038-1N5719TX C68001 1N5719 equivalent MA1N5719HX 1N4456 96341 HP JANTX1N5719 MA1N5719 C-68001

    ASTM-D3487

    Abstract: 1N5597 1N5600 D1868 250-28UNF-2B 037Z3 1N5603 375-24UNF-2A
    Text: REVISIONS LTR DESCRIPTION DATE APPROVED MIL-PRF-19500/404 has been cancelled. This drawing may be used as a substitute. Selected item drawing Prepared in accordance with ASME Y14.100 REV PAGE REV PAGE REV STATUS OF PAGES REV PAGES PMIC N/A 1 2 3 4 PREPARED BY


    Original     		PDF MIL-PRF-19500/404 037Z3 1N5597, 1N5600, 1N5603, ASTM-D3487 1N5597 1N5600 D1868 250-28UNF-2B 037Z3 1N5603 375-24UNF-2A

    04029-01TX

    Abstract: QML-19500 2N5927 NPN power switching transistor 32953 power tech 32953 ASME-14
    Text: REVISIONS LTR DESCRIPTION DATE APPROVED MIL-S-19500/440 has been cancelled. This drawing may be used as a substitute. Prepared in accordance with ASME-14.100 Selected item drawing REV PAGE REV PAGE REV STATUS OF PAGES REV PAGES PMIC N/A Original date of drawing


    Original     		PDF MIL-S-19500/440 ASME-14 2N5927 037Z3 04029-01TX 04029-01TXV 04029-01TX QML-19500 2N5927 NPN power switching transistor 32953 power tech 32953

    90024-03TX

    Abstract: pic646
    Text: REVISIONS LTR DESCRIPTION DATE APPROVED A Revise drawing, update sources. 7 August 2000 Monica Poelking B Supplier/address/CAGE change; reformat document 23 May 2002 Thomas M. Hess C Correct figure 1 - header thickness, supplier name, editorial changes throughout - RK


    Original     		PDF 037Z3 ASME-14 12certificate 90024-01TX, 90024-02TX, 90024-03TX, 90024-04TX, 90024-05TX, 90024-06TX, PIC645 90024-03TX pic646

    power tech 32953

    Abstract: 2N5926 ASME-14 2N5926 JAN 2N5926 JANTX certificate of compliance jantx
    Text: REVISIONS LTR DESCRIPTION DATE APPROVED MIL-S-19500/447 has been cancelled. This drawing may be used as a substitute. Prepared in accordance with ASME-14.100 Selected item drawing REV PAGE REV PAGE REV STATUS OF PAGES REV PAGES PMIC N/A 1 2 4 PREPARED BY Roger Kissel


    Original     		PDF MIL-S-19500/447 ASME-14 037Z3 2N5926 5961-Eed 04030-01TX 04030-01TXV power tech 32953 2N5926 2N5926 JAN 2N5926 JANTX certificate of compliance jantx

    Untitled

    Abstract: No abstract text available
    Text: SUPPLIER REQUIREMENTS FOR QUALITY, DESIGN & MANUFACTURING 1.0 PURPOSE The purpose of this document is to define the requirements of Anaren Microwave, Anaren Ceramics and MS Kennedy collectively Anaren regarding the quality as well as the design and manufacture of purchased material. This requirement is not meant to discourage suppliers from


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: FSTYC9055D, FSTYC9055R Data Sheet Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.


    Original     		PDF FSTYC9055D, FSTYC9055R

    1E14

    Abstract: 2E12 FSF9250D FSF9250R
    Text: S E M I C O N D U C T O R FSF9250D, FSF9250R Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs June 1997 Features Package • 15A, -200V, rDS ON = 0.290Ω • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects


    Original     		PDF FSF9250D, FSF9250R -200V, 36MeV/mg/cm2 O-254AA 1E14 2E12 FSF9250D FSF9250R

    Untitled

    Abstract: No abstract text available
    Text: FSGL230R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Fairchild Star*Power Rad Hard MOSFETs have been specifically TM developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the system designer both


    Original     		PDF FSGL230R FSGL230R

    2E12

    Abstract: FSGL033D1 FSGL033R3 FSGL033R4 Rad Hard in Fairchild for MOSFET
    Text: FSGL033R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFET Fairchild Star*Power Rad Hard MOSFETs have been specifically TM developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the system designer both


    Original     		PDF FSGL033R FSGL033R 2E12 FSGL033D1 FSGL033R3 FSGL033R4 Rad Hard in Fairchild for MOSFET

    2E12

    Abstract: FSYC9160D FSYC9160D1 FSYC9160D3 FSYC9160R FSYC9160R1 Rad hard MOSFETS in Harris
    Text: FSYC9160D, FSYC9160R Semiconductor Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs July 1998 Features Description • 47A, -100V, rDS ON = 0.053Ω The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs


    Original     		PDF FSYC9160D, FSYC9160R -100V, 2E12 FSYC9160D FSYC9160D1 FSYC9160D3 FSYC9160R FSYC9160R1 Rad hard MOSFETS in Harris

    Untitled

    Abstract: No abstract text available
    Text: FSGYE230R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFET Fairchild Star*Power Rad Hard MOSFETs have been specifically TM developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the system designer both


    Original     		PDF FSGYE230R FSGYE230R

    Untitled

    Abstract: No abstract text available
    Text: FSGYE033R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFET Fairchild Star*Power Rad Hard MOSFETs have been specifically TM developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the system designer both


    Original     		PDF FSGYE033R FSGYE033R

    Untitled

    Abstract: No abstract text available
    Text: FSGYC260R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFET Fairchild Star*Power Rad Hard MOSFETs have been specifically TM developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the system designer both


    Original     		PDF FSGYC260R FSGYC260R

    2N6138

    Abstract: 2N6116 JANTX2N6118 JANTX2N6137 JANTX2N6117 JANTX2N6116 037z3-01039 2N6118 JAN2N6116 2N6117
    Text: REVISIONS LTR DESCRIPTION DATE Update lead finish paragraph to clarify prohibition of pure tin, update format A APPROVED 16 August 2007 Thomas M. Hess Devices on this drawing may be used as a substitute for MIL-S-19500/493 which has been inactivated for new design.


    Original     		PDF MIL-S-19500/493 ASME-14 2N6116 2N6116TX 2N6116TXV 2N6117 2N6117TX 2N6117TXV 2N6118 2N6118TX 2N6138 2N6116 JANTX2N6118 JANTX2N6137 JANTX2N6117 JANTX2N6116 037z3-01039 2N6118 JAN2N6116 2N6117

    2E12

    Abstract: FSL9130D FSL9130D1 FSL9130D3 FSL9130R FSL9130R1
    Text: FSL9130D, FSL9130R 5A, -100V, 0.680 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description • 5A, -100V, rDS ON = 0.680Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event


    Original     		PDF FSL9130D, FSL9130R -100V, 2E12 FSL9130D FSL9130D1 FSL9130D3 FSL9130R FSL9130R1

    2E12

    Abstract: FSL130D FSL130D1 FSL130D3 FSL130R FSL130R1 FSL130R3
    Text: FSL130D, FSL130R 8A, 100V, 0.230 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 8A, 100V, rDS ON = 0.230Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event


    Original     		PDF FSL130D, FSL130R 2E12 FSL130D FSL130D1 FSL130D3 FSL130R FSL130R1 FSL130R3

    Untitled

    Abstract: No abstract text available
    Text: h a r r is S E M I C O N D U C T O R FSF9150D, FSF9150R 7 Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs June 1997 Features Package • 22A, -100V, rDS ON = 0.140£1 TO-254AA • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event


    OCR Scan     		PDF FSF9150D, FSF9150R -100V, O-254AA 36MeV/mg/cm2

    Untitled

    Abstract: No abstract text available
    Text: FSL430D, FSL430R 2A, 500V, 2.50 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 2A, 500V, ros ON = 2.50£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space


    OCR Scan     		PDF FSL430D, FSL430R 36MeV/mg/cm2 O-205AF 254mm)

    Untitled

    Abstract: No abstract text available
    Text: FSL234D, FSL234R 4A, 250V, 0.610 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 4A, 250V, ros ON = 0-610£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space


    OCR Scan     		PDF FSL234D, FSL234R 36MeV/mg/cm2 100Kolder) 254mm)

    Untitled

    Abstract: No abstract text available
    Text: h a r r is S E M I C O N D U C T O R FSF9250D, FSF9250R 7 Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs June 1997 Features Package • 15A, -200V, rDS ON = 0.290Q TO-254AA • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event


    OCR Scan     		PDF FSF9250D, FSF9250R -200V, O-254AA 36MeV/mg/cm2

    Untitled

    Abstract: No abstract text available
    Text: FSYC260D, FSYC260R H A R R IS X S em iconductor Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs July 1998 Features Description • 46A, 200V, Tqs ^o N = 0.050£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs


    OCR Scan     		PDF FSYC260D, FSYC260R

    Untitled

    Abstract: No abstract text available
    Text: S FSYA250D, FSYA250R Semiconductor y 27A, 200V, 0.100 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description . 27A, 200V, rDS 0 N = 0.100£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs


    OCR Scan     		PDF FSYA250D, FSYA250R FSYA250R

    Untitled

    Abstract: No abstract text available
    Text: FSS230D, FSS230R S em iconductor 8A, 200V, 0.440 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 8A, 200V, rQs^oN = 0.440£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs


    OCR Scan     		PDF FSS230D, FSS230R O-257AA MIL-S-19500