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    FSYC9160D1 Search Results

    FSYC9160D1 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FSYC9160D1 Fairchild Semiconductor Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs Original PDF
    FSYC9160D1 Intersil Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs Original PDF

    FSYC9160D1 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Rad Hard in Fairchild for MOSFET

    Abstract: 2E12 FSYC9160D FSYC9160D1 FSYC9160D3 FSYC9160R FSYC9160R1
    Text: FSYC9160D, FSYC9160R Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs December 2001 Features Description • 47A, -100V, rDS ON = 0.053Ω The Discrete Products Operation of Fairchild has developed a series of Radiation Hardened MOSFETs specifically


    Original     		PDF FSYC9160D, FSYC9160R -100V, Rad Hard in Fairchild for MOSFET 2E12 FSYC9160D FSYC9160D1 FSYC9160D3 FSYC9160R FSYC9160R1

    2E12

    Abstract: FSYC9160D FSYC9160D1 FSYC9160D3 FSYC9160R FSYC9160R1 Rad hard MOSFETS in Harris
    Text: FSYC9160D, FSYC9160R Semiconductor Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs July 1998 Features Description • 47A, -100V, rDS ON = 0.053Ω The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs


    Original     		PDF FSYC9160D, FSYC9160R -100V, 2E12 FSYC9160D FSYC9160D1 FSYC9160D3 FSYC9160R FSYC9160R1 Rad hard MOSFETS in Harris

    FSYC9160R

    Abstract: FSYC9160R1 2E12 FSYC9160D FSYC9160D1 FSYC9160D3 Rad Hard in Fairchild for MOSFET
    Text: FSYC9160D, FSYC9160R Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs July 1998 Features Description • 47A, -100V, rDS ON = 0.053Ω The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically


    Original     		PDF FSYC9160D, FSYC9160R -100V, FSYC9160R FSYC9160R1 2E12 FSYC9160D FSYC9160D1 FSYC9160D3 Rad Hard in Fairchild for MOSFET

    2E12

    Abstract: FSYC9160D FSYC9160D1 FSYC9160D3 FSYC9160R FSYC9160R1
    Text: FSYC9160D, FSYC9160R Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs July 1998 Features Description • 47A, -100V, rDS ON = 0.053Ω The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically


    Original     		PDF FSYC9160D, FSYC9160R -100V, 2E12 FSYC9160D FSYC9160D1 FSYC9160D3 FSYC9160R FSYC9160R1

    Untitled

    Abstract: No abstract text available
    Text: y *“ * FSYC9160D, FSYC9160R Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs July 1998 Features Description . 47A, -100V, rDS 0 N = 0.053£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs


    OCR Scan     		PDF FSYC9160D, FSYC9160R