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    FSF9150R Price and Stock

    Intersil Corporation FSF9150R3

    POWER FIELD-EFFECT TRANSISTOR, 22A I(D), 100V, 0.14OHM, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-254AA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components FSF9150R3 10
    • 1 $540
    • 10 $432
    • 100 $432
    • 1000 $432
    • 10000 $432
    		Buy Now

    FSF9150R Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Type PDF
    FSF9150R Harris Semiconductor Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs Original PDF
    FSF9150R Intersil 22A, -100V, 0.140 ?, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs Original PDF
    FSF9150R1 Intersil 22A, -100V, 0.140 ?, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs Original PDF
    FSF9150R3 Fairchild Semiconductor 22A, -100V, 0.140 ?, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs Original PDF
    FSF9150R3 Intersil 22A, -100V, 0.140 ?, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs Original PDF
    FSF9150R4 Fairchild Semiconductor 22A, -100V, 0.140 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFET Original PDF
    FSF9150R4 Intersil 22A, -100V, 0.140 ?, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs Original PDF
    FSF9150R4 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    FSF9150R Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: JANSR2N7403 S E M I C O N D U C T O R Formerly Available As FSF9150R4, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs February 1998 Features Description • 22A, -100V, rDS ON = 0.140Ω The Discrete Products Operation of Harris Semiconductor


    Original     		PDF JANSR2N7403 1-800-4-HARRIS

    2E12

    Abstract: FSF9150D FSF9150R
    Text: S E M I C O N D U C T O R FSF9150D, FSF9150R Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs June 1997 Features Package • 22A, -100V, rDS ON = 0.140Ω • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects


    Original     		PDF FSF9150D, FSF9150R -100V, 36MeV/mg/cm2 O-254AA 2E12 FSF9150D FSF9150R

    FSF9150R1

    Abstract: No abstract text available
    Text: FSF9150D, FSF9150R 22A, -100V, 0.140 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs December 2001 Features Description • 22A, -100V, rDS ON = 0.140Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs


    Original     		PDF FSF9150D, FSF9150R -100V, FSF9150R1

    2E12

    Abstract: FSF9150D FSF9150D1 FSF9150D3 FSF9150R FSF9150R1
    Text: FSF9150D, FSF9150R 22A, -100V, 0.140 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description • 22A, -100V, rDS ON = 0.140Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event


    Original     		PDF FSF9150D, FSF9150R -100V, 2E12 FSF9150D FSF9150D1 FSF9150D3 FSF9150R FSF9150R1

    FSF9150R4

    Abstract: p-chan 10a 2E12 JANSR2N7403 Rad Hard in Fairchild for MOSFET
    Text: JANSR2N7403 Formerly FSF9150R4 22A, -100V, 0.140 Ohm, Rad Hard, P-Channel Power MOSFET June 1998 [ /Title JANS R2N74 03 /Subject (22A, 100V, 0.140 Ohm, Rad Hard, PChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, Semiconductor, 22A, 100V,


    Original     		PDF JANSR2N7403 FSF9150R4 -100V, R2N74 FSF9150R4 p-chan 10a 2E12 JANSR2N7403 Rad Hard in Fairchild for MOSFET

    Untitled

    Abstract: No abstract text available
    Text: JANSR2N7403 Formerly FSF9150R4 22A, -100V, 0.140 Ohm, Rad Hard, P-Channel Power MOSFET January 2002 Features Description • 22A, -100V, rDS ON = 0.140Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs


    Original     		PDF JANSR2N7403 FSF9150R4 -100V,

    FSF9150R4

    Abstract: 2E12 JANSR2N7403
    Text: JANSR2N7403 Formerly FSF9150R4 22A, -100V, 0.140 Ohm, Rad Hard, P-Channel Power MOSFET June 1998 Features Description • 22A, -100V, rDS ON = 0.140Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event


    Original     		PDF JANSR2N7403 FSF9150R4 -100V, FSF9150R4 2E12 JANSR2N7403

    2E12

    Abstract: FSF9150D FSF9150D1 FSF9150D3 FSF9150R FSF9150R1
    Text: FSF9150D, FSF9150R 22A, -100V, 0.140 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description • 22A, -100V, rDS ON = 0.140Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event


    Original     		PDF FSF9150D, FSF9150R -100V, 2E12 FSF9150D FSF9150D1 FSF9150D3 FSF9150R FSF9150R1

    TO-254AA Package

    Abstract: FSF9150R4
    Text: JANSR2N7403 ffî MASSES Formerly FSF9150R4 22A, -100V, 0.140 Ohm, Rad Hard, P-Channel Power MOSFET June 1998 Description Features • 22A, -100V, rDS 0 N = 0.140£i • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects


    OCR Scan     		PDF FSF9150R4 JANSR2N7403 -100V, MIL-STD-750, MIL-S-19500, 100ms; 500ms; TO-254AA Package FSF9150R4

    Untitled

    Abstract: No abstract text available
    Text: JANSR2N7403 h a r r is S E M I C O N D U C T O R * mm w m m ^ m m m m m v W ' Formerly Available As FSF9150R4, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs February 1998 Features Description • 22A, -100V, rDS oN = 0-140i2 The Discrete Products Operation of Harris Semiconductor


    OCR Scan     		PDF JANSR2N7403 FSF9150R4, 1-800-4-HARRIS

    Untitled

    Abstract: No abstract text available
    Text: h a r r is S E M I C O N D U C T O R FSF9150D, FSF9150R 7 Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs June 1997 Features Package • 22A, -100V, rDS ON = 0.140£1 TO-254AA • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event


    OCR Scan     		PDF FSF9150D, FSF9150R -100V, O-254AA 36MeV/mg/cm2

    Untitled

    Abstract: No abstract text available
    Text: FSF9150D, FSF9150R 22A, -100V, 0.140 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description . 22A, -100V, rDS 0 N = 0.140£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs


    OCR Scan     		PDF FSF9150D, FSF9150R -100V, riTO-254AA MIL-S-19500

    7n51

    Abstract: No abstract text available
    Text: FSF9150D, FSF9150R HARRIS S E M I C O N D U C T O R 22A, -100V, 0.140 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs Features Description • 22A, -100V, rDS 0N = 0.140Q T h e D is c re te P ro d u c ts O p e ra tio n o f H a rris S e m ic o n d u c to r


    OCR Scan     		PDF FSF9150D, FSF9150R -100V, MIL-STD-750, MtL-S-19500, 100ms; 500ms; 7n51

    Untitled

    Abstract: No abstract text available
    Text: h a r r is S E M I C O N D U C T O R FSF9150D, FSF9150R 7 Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs June 1997 Features Package • 22Â , -1 00V, rDS ON = 0.14 0 ÌÌ TO-254AA • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si)


    OCR Scan     		PDF FSF9150D, FSF9150R O-254AA

    7404

    Abstract: No abstract text available
    Text: JAN S Rad Hard Power M OSFET Selection Guide HARRIS P A R T N UM BER FORM ERLY AVAILABLE A S PACKAGE B V D S S V rDS{on) (ß ) Id (A) JANSR2N7272 FRL130R4 TO-2Û5AF 100 0.180 8 JANSR2N7275 FRL230R4 TO-205AF 200 0.500 5 JAN SR2N 7278 FRL234R4 T 0 -205A F


    OCR Scan     		PDF JANSR2N7272 JANSR2N7275 FRL130R4 FRL230R4 FRL234R4 FRF150R FRF250R4 FSL130R4 FSL230R4 FSL234R4 7404

    3203 MOSFET

    Abstract: Mosfets mosfet .5a 100v n-channel 250V power mosfet 100V 8A N-Channel MOSFET FSj264
    Text: RAD HARD MOSFETs RAD HARD SEGR MOSFETs PAGE Rad Hard Power MOSFET Selection G u id e . 3-3 Rad Hard Data Packages - Harris Power T ra n s is to re .


    OCR Scan     		PDF FSL110D, FSL110R FSL13AOD, FSL13AOR FSL23AOD, FSL23AOR FSL23A4D, FSL23A4R FSL130D, FSL130R 3203 MOSFET Mosfets mosfet .5a 100v n-channel 250V power mosfet 100V 8A N-Channel MOSFET FSj264

    MOSFET Selection Guide

    Abstract: TO257AA t0-205af TO254AA FSj264
    Text: Rad Hard Power MOSFET Selection Guide N-Channel PACKAGE BV d s s V rDS(ON) (£!) ' d (A) FSL110D, FSL110R PART NUMBER T0-205AF 100 0.600 3.5 FSL13AOD, FSL13AOR TO-205AF 100 0.180 9 FSL23AOD, FSL23AOR TO-205AF 200 0.350 6 FSL23A4D, FSL23A4R T0-205AF 250 0.480


    OCR Scan     		PDF FSL110D, FSL110R FSL13AOD, FSL13AOR FSL23AOD, FSL23AOR FSL23A4D, FSL23A4R FSL130D, FSL130R MOSFET Selection Guide TO257AA t0-205af TO254AA FSj264

    equivalent data book of 10N60 mosfet

    Abstract: MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40
    Text: $5.00 S E M I C O N D U C T O R TECHNICAL ASSISTANCE Harris Marketing Support Services HMSS , 1-800-4HARRIS HMSS provides world-class service to customers requiring information on all products offered by Harris Semiconductor. Ask Harris Marketing Support Services for answers concerning:


    OCR Scan     		PDF 1-800-4HARRIS equivalent data book of 10N60 mosfet MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40