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    CD 100 TRANSISTOR Search Results

    CD 100 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    CD 100 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SA1444 equivalent

    Abstract: BA1F4M transistor equivalent table POWER MOS FET 2sj 2sk 2sd882 equivalent Equivalent to transistor 2sc945 2SA1206 TRANSISTOR equivalent 2SC1845 equivalent 2SK type 2SD1694 equivalent
    Text: CD-ROM Transistor CD-ROM X13769XJ2V0CD00 08-1 Transistor Quick Reference by Package TO–92 • TO-92 Type Transistor VCEO V ~15 ~30 ~50 ~70 ~100 ~150 ~200 ~250 2SA1376 2SA1376A 2SC3478 2SC3478A 2SA1544 ~400 IC (A) ~20 m 2SC1674 2SA1206∗∗ 2SA988 2SA992


    Original     		PDF X13769XJ2V0CD00 2SA1206 2SC1674 2SA988 2SA992 2SC1841 2SC1845 2SA733 2SA990 2SC945 2SA1444 equivalent BA1F4M transistor equivalent table POWER MOS FET 2sj 2sk 2sd882 equivalent Equivalent to transistor 2sc945 2SA1206 TRANSISTOR equivalent 2SC1845 equivalent 2SK type 2SD1694 equivalent

    nf025

    Abstract: NE27283 upc27 x-band power transistor 100W NE42484 P147D 2SK2396 uPG508 nf025db 2SC5408
    Text: CD-ROM RF and Microwave Devices CD-ROM X13769XJ2V0CD00 11-1 RF and Microwave Devices IC • AGC AMP. µ PCx×××, µPG×××× Part Number Applications Supply Voltage (V) Supply Current (mA) Operating Frequency (MHz) µPC8119T Mobile Comm. 3 11 100–1920


    Original     		PDF X13769XJ2V0CD00 950MHz 500MHz PC2794 PC1687 PC2744 PC2775/µ nf025 NE27283 upc27 x-band power transistor 100W NE42484 P147D 2SK2396 uPG508 nf025db 2SC5408

    MAX3274

    Abstract: MAX3274UGE MAX3275
    Text: 19-2375; Rev 1; 7/03 Dual-Rate Fibre Channel Limiting Amplifier Features ♦ Dual-Rate 1.0625Gbps/2.125Gbps Operation ♦ On-Chip Selectable 4th-Order Filter ♦ Relaxation Oscillation Suppression of Legacy, CD Laser-Based Transmitters ♦ Available in a 100Ω Output Termination


    Original     		PDF 0625Gbps/2 125Gbps 16-Pin MAX3274UGE G1644-1 MAX3274 MAX3274 MAX3274UGE MAX3275

    Untitled

    Abstract: No abstract text available
    Text: 19-2375; Rev 1; 7/03 Dual-Rate Fibre Channel Limiting Amplifier Features ♦ Dual-Rate 1.0625Gbps/2.125Gbps Operation ♦ On-Chip Selectable 4th-Order Filter ♦ Relaxation Oscillation Suppression of Legacy, CD Laser-Based Transmitters ♦ Available in a 100Ω Output Termination


    Original     		PDF 0625Gbps/2 125Gbps 16-Pin MAX3274UGE G1644-1 MAX3274

    MAX3274

    Abstract: MAX3274UGE MAX3275 MAX3276 MAX3276UGE
    Text: 19-2375; Rev 0; 4/02 Dual-Rate Fibre Channel Limiting Amplifiers Features ♦ Dual-Rate 1.0625Gbps/2.125Gbps Operation ♦ On-Chip Selectable 4th-Order Filter ♦ Relaxation Oscillation Suppression of Legacy, CD Laser-Based Transmitters ♦ Available in 100Ω and 150Ω Output Terminations


    Original     		PDF 0625Gbps/2 125Gbps 16-Pin MAX3274UGE MAX3276UGE* MAX3274/MAX3276 MAX3274 MAX3274UGE MAX3275 MAX3276 MAX3276UGE

    C1996

    Abstract: PC87415 VCG100A
    Text: March 1996 PC87415 PCI-IDE DMA Master Mode Interface Controller 1 0 General Description 2 0 Features The Enhanced PCI-IDE Interface is a single-chip controller packaged in a 100-pin PQFP It provides 2 IDE channels for interfacing up to 4 IDE drives or 2 IDE drives and CD-ROM


    Original     		PDF PC87415 100-pin C1996 PC87415 VCG100A

    FR-BSF01

    Abstract: FR-D740-012 filter FR-ASF-H FR-D720S FR-D720 FR-D740-036-EC FR-D740-022 FR-BiF FR-D740-036 FR-D740-080
    Text: D700_EC_Guideline_ib0600352ENG.book 1 ページ ２００８年４月１０日 木曜日 午後２時６分 INVERTER FR-D700 INSTALLATION GUIDELINE FR-D740-012 to 160-EC FR-D720S-008 to 100-EC Thank you for choosing this Mitsubishi Inverter. Please read through this Installation Guideline and a CD-ROM enclosed to operate this inverter correctly.


    Original     		PDF ib0600352ENG FR-D700 FR-D740-012 160-EC FR-D720S-008 100-EC FR-BSF01 filter FR-ASF-H FR-D720S FR-D720 FR-D740-036-EC FR-D740-022 FR-BiF FR-D740-036 FR-D740-080

    2n3054

    Abstract: 40349
    Text: Power Transistors Hometaxial-Base n-p-n Type Selection Charts h“FE A V CE V Temp.—°C 25 CD 'c V CEV^SUS* V 40 40 40 40 55 55 55 65 140 60 60 60 60 100 100 100 90 160 20-60 35-100 20-80 25-100 20-60 35-100 35-100 30-125 30-125 0.2 0.2 0.1 0.45 0.2 0.2


    OCR Scan     		PDF 2N1482/40349 2N1482) 2N1700 2N1482® O-39/TO-205MD 92CS-2022Î 2n3054 40349

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors Hometaxial-Base n-p-n Type Selection Charts h“FE A V CE V Temp.—°C 25 CD 'c V CEV^SUS* V 40 40 40 40 55 55 55 65 140 60 60 60 60 100 100 100 90 160 20-60 35-100 20-80 25-100 20-60 35-100 35-100 30-125 30-125 0.2 0.2 0.1 0.45 0.2 0.2


    OCR Scan     		PDF 2N1482/40349 2N1482) 2N1700 2N1482® O-39/TO-205MD 92CS--24062

    2Sj72

    Abstract: transistor 2SC2655 2SK147 2sc2705 transistor 2sc2500 high voltage driver transistor 2sc2482 2SC238 2sc2383 2SC3225
    Text: L-SSTM 9. TO-92 MOD PACKAGE SERIES co o CD N ro Ul o >TRANSISTOR ^ Application Type No. & SW V (pF) (pF) (V) 1 4 0 -6 0 0 * 1 5Ò0 0.5 2000 50 150 1 500 (27)/(50 10 0.9 1 0 0 -3 2 0 * * 2 100 0.5 800 80 150 2 100 (13) 10 1 Ü i—i 1.5 0.9 1 0 0 -3 2 0 * *


    OCR Scan     		PDF 2SA1160 2SC2500 2SA1160 2SC1627A 2SC2235 2SA817A 2SA965 2SK147 2SJ72 2Sj72 transistor 2SC2655 2sc2705 transistor 2sc2500 high voltage driver transistor 2sc2482 2SC238 2sc2383 2SC3225

    2SC3378

    Abstract: fet 2sK161 2SA1048 2SA1049 2SA1150 2SA1297 2SC2458 2SC2469 2SC2710 2SK184
    Text: L. —3 O n X H CD 2. MINI PACKAGE SERIES > rH H H n 73 m —3 m \ o "O > TRANSISTOR < PC PNP V (mA) (mW) : 2SA1048 50 150 200 70—700/400 2SC2458(l ^2SA1048( l ) 50 150 200 High Voltage 2SC2469 ' 2SA1049 120 100 High Current 2SC2710 Ì2SA1150 30 800 High Current


    OCR Scan     		PDF 2SC2458 2SA1048 2SC24S8 2SC2469 2SA1049 2SC2710 2SA1150 2SK367 2SK370 2SC3378 fet 2sK161 2SA1297 2SC2458 2SC2469 2SC2710 2SK184

    2N3902

    Abstract: No abstract text available
    Text: TYPE 2N3902 N-P-N SILICON POWER TRANSISTOR HIGH VOLTAGE, HIGH FORWARD AND REVERSE ENERGY DESIGNED FOR INDUSTRIAL AND M IL IT A R Y APPLICATIONS X CD - I m C -< • 100 W at 75°C Case Temperature <- r V À 1 NJ m o jz • 400 V Collector-Emitter Off-State Voltage


    OCR Scan     		PDF 2N3902

    2SC3340

    Abstract: 2SA1324 2SC3339 2SC3426
    Text: —3 10. SUPER MINI PACKAGE SERIES TO-236 MOD./SOT-23 MOD. C/i 1 H CD 3» rS M H n > TRANSISTOR << •c PC (V) (mA) (mW) 50 150 150 70 -700/400 6 V CE (V) >C (mA) (V) •c (mA) >B (mA) (MHz) 0.25/0.3 100 10 (80) NPN l General Purpose 2SC2712 ! High Voltage


    OCR Scan     		PDF O-236 /SOT-23 2SA1162 15NEW) 2SC2532 2SC2714 2SC2715 2SC2716 2SC2996 2SC3340 2SA1324 2SC3339 2SC3426

    TRANSistor BC108

    Abstract: 2n4001 TRANSISTOR TRANSISTOR BC140 Transistor BC177 applications of Transistor BC108 2N40361 Transistor BCY58 2N3419 2N1132 2N3053
    Text: NPN LOW LEVEL < Type o< CD Max 2N3053 60 V ce O U 'C: V mA V mA mA 40 700 1.4 150 15 !c Ib h FE Min. Max. 50 250 Min f T at at Pto, at Tamb Package Comple­ ment = 25°C lc !c mW m A MH z m A 150 100 50 1000 TO-39 2N4037 150 80 50 600 TO-39 2N1131 150 100


    OCR Scan     		PDF 2N3053 2N4037 2N696 2N1131 2N697 2N1132 BFY51 BC107 BC177 BCY59 TRANSistor BC108 2n4001 TRANSISTOR TRANSISTOR BC140 Transistor BC177 applications of Transistor BC108 2N40361 Transistor BCY58 2N3419 2N1132

    TIP519

    Abstract: No abstract text available
    Text: TYPES TIP519, TIP520 P-N-P SILICON POWER TRANSISTORS CD H FOR POWER-AMPLIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS C < r *o r m m w 150 V Min V BR CEO -M 8-A Rated Continuous Collector Current ll o 50 Watts at 100°C Case Temperature od r- -o Min fy of 40 MHz at 5 V , 1 A


    OCR Scan     		PDF TIP519, TIP520 TIP519

    2N1724A

    Abstract: 2N1722A
    Text: TYPES 2N1722A, 2N1724A N-P-N TRIPLE-DIFFUSED MESA SILICON TRANSISTORS • 50 Watts at 100°C Case Temperature • Maxim um rcs of 0.3 Ohm at 2 Amperes lc • Maxim um V fjE of 2 V o lts at 5 Amperes lc « in w • Minim um f f of 10 Megahertz S z 5 » CD H


    OCR Scan     		PDF 2N1722A, 2N1724A 2N1724A 2N1722A

    D4001BC

    Abstract: D4002BC 4001BC 92CS-24322 IC CD4002B
    Text: A R R C D 4001B , C D 4002B , CD 4 0 25 B Types IS CMOS NOR Gates Features: • Propagation delay time = 60 ns typ. at C|_ = 5 0 p F , V d d = 1 0 V ■ Buffered inputs and outputs ■ Standardized symmetrical output characteristics ■ 100% tested for maximum quiescent current at 20 V


    OCR Scan     		PDF 4001B 4002B CD4001B CD4002B CD4025B CD4001B, CD4002B, 92CS-2 7441fi CD4001B D4001BC D4002BC 4001BC 92CS-24322 IC CD4002B

    2N698

    Abstract: cd 4011 be 2n657 to39 2N1990
    Text: JEDEC TRANSISTORS continued @ > 'S u u > u <J > a LLl 1< _E c Ë Ul u_ _c 60 100 (40) (40) 30/90 30/90 20/60 40/120 200 200 150 150 60 20/60 40/120 40/120 40/120 40/120 150 150 150 150 150 150 150 150 10 30 X CD u. > < j= _o CL X eg E </> UJ o > X CO S o


    OCR Scan     		PDF 2N698 22ZZ22ZZ22Z-OT3-DZZZ2-DTJ-DZZZZZZ2ZZZZ ZZ222ZZ2222 D-D-OZ22Z -OzZ2Z2Z22Z2Z 000000000000a l000000 T0-18 cd 4011 be 2n657 to39 2N1990

    Untitled

    Abstract: No abstract text available
    Text: ¡2 H A R R I S CD 4541B Types CMOS Programmable Timer H ig h -V o lta g e T ypes 20-V olt Rating F e a tu re s: • Low sym m etrical ou tput resistance, typica lly 100Q at I'od = 15 V ■ B uilt-in low -pow er RC oscillator ■ O scillator frequency range: DC to 100 kHz


    OCR Scan     		PDF 4541B 92CS-Ã CD4541B.

    BC107

    Abstract: 2N1131 2N1132 2N3053 2N4037 2N696 2N697 BC177 BCY59 BCY79
    Text: NPN LOW LEVEL 2N3053 Max VcE sat at V ceO U 'C: < Type o< CD Max V mA V mA mA 60 40 700 1.4 150 15 2N696 60 40 2N697 60 40 BFY51 60 30 !c Ib h FE Min. Max. 50 250 at Continued Min f T at Pto, at Tamb Package Comple­ ment = 25°C lc !c mW mA MHz mA 150 100


    OCR Scan     		PDF 2N3053 2N4037 2N696 2N1131 2N697 2N1132 BFY51 BC107 BC177 BCY59 2N1131 2N1132 2N4037 BC177 BCY79

    BC238B

    Abstract: BC547B bcy58 ZT Ferranti 2N1131 2N1132 2N3053 2N4037 2N696 2N697
    Text: NPN LOW LEVEL 2N3053 Max VcE sat at V ceO U 'C: < Type o< CD Max V mA V mA mA 60 40 700 1.4 150 15 2N696 60 40 2N697 60 40 BFY51 60 30 !c Ib h FE Min. Max. 50 250 at Continued Min f T at Pto, at Tamb Package Comple­ ment = 25°C lc !c mW mA MHz mA 150 100


    OCR Scan     		PDF 2N3053 2N4037 2N696 2N1131 2N697 2N1132 BFY51 BC107 BC177 BCY59 BC238B BC547B bcy58 ZT Ferranti 2N1131 2N1132 2N4037

    transistor bcy70

    Abstract: 2N1131 2N1132 2N3053 2N4037 2N696 2N697 BC107 BC177 BCY59
    Text: NPN LOW LEVEL < Type o< CD Max 2N3053 60 V ceO U 'C: V mA V mA mA 40 700 1.4 150 15 2N696 60 40 2N697 60 40 BFY51 Max VcE sat at 60 30 !c Ib h FE Min. Max. 50 250 Continued Min f T at at Pto, at Tamb Package Comple­ ment = 25°C lc !c mW mA MH z mA 150 100


    OCR Scan     		PDF 2N3053 2N4037 2N696 2N1131 2N697 2N1132 BFY51 BC107 BC177 BCY59 transistor bcy70 2N1131 2N1132 2N4037 BC177

    2N1131

    Abstract: 2N1132 2N3053 2N4037 2N696 2N697 BC107 BC177 BCY59 BCY79
    Text: NPN LOW LEVEL < Type o< CD Max 2N3053 60 V ceO U 'C: V mA V mA mA 40 700 1.4 150 15 !c Ib Min f T at h FE at Min. Max. 50 250 Pto, at Tamb Package Comple­ ment = 25°C lc !c mW mA MHz mA 150 100 50 1000 TO-39 2N4037 50 600 TO-39 2N1131 2N1132 150 15 20 60


    OCR Scan     		PDF 2N3053 2N4037 2N696 2N1131 2N697 2N1132 BFY51 BC107 BC177 BCY59 2N1131 2N1132 2N4037 BC177 BCY79

    CD 5888 CB

    Abstract: cd 4847 CD 5888 ic IC CD 3207 transistor d 13009 CD 8227 UPA831TF ha 12185 nt ap 6928 cd 5888
    Text: PRELIMINARY DATA SHEET UPA831TF NPN SILICON EPITAXIAL TWIN TRANSISTOR OUTLINE DIMENSIONS FEATURES LOW NOISE: Units in mm Package Outline TS06 (Top View) Q1 :NF = 1.2 dB T Y P at f = 1 G Hz, V c e = 3 V, Ic = 7 mA Q 2:N F = 1.4 dB T Y P at f = 1 G Hz, V c e = 3 V, Ic = 7 mA


    OCR Scan     		PDF UPA831TF NE856, NE681) NE85630 NE68130 UPA831TF-T1 24-Hour CD 5888 CB cd 4847 CD 5888 ic IC CD 3207 transistor d 13009 CD 8227 UPA831TF ha 12185 nt ap 6928 cd 5888