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    Untitled

    Abstract: No abstract text available
    Text: Ì 989963 CENTRAL SEMICONDUCTOR b i d e I oocm ns a _ 61C 00195'^ ^ « T POWER DARLINGTON TRANSISTORS EPOXY 6.0A 1C = TYPE NO . Ic VCEO Pd (Max) Tc=25°C Volts Watts VCE(S) @IC fT Min Amps Volts Amps Mh z hFE @IC Min - Max PNP Amps BDW23 BDW24 : 6.0 45 50


    OCR Scan     		BDW23 BDW24 BDW23A BDW24A BDW23B BDW24B BDW23C BDW24C BDX53E BDX54E PDF

    D40C2

    Abstract: No abstract text available
    Text: CENTRAL SEMICONDUCTOR fc,l D | nfl'HbB 4 1~3 T"29“29 SMALL SIGNAL DARLINGTON TRANSISTORS EPOXY lc ^ ^ O O m A TYPE NO. OPERATING AND STORAGE TEMPERATURE -6 5 °to + 1 5 0 °C Jc VCEO Amps Volts 2N5305 0.3 25 2N5306 0.3 2N 5306A Pd (Max) hFE @ 1C TA=25°C


    OCR Scan     		2N5305 2N5306 2N5307 2N5308 GES5305 S5306 GES5306A GES5307 GES5308 GES5308A D40C2 PDF

    2n3072

    Abstract: No abstract text available
    Text: ti CENTRAL SEM ICON DU CTOR : 1VÖVVOJ U CINI R A L D E I nû'î'JtiB ODDOSSG 3 T ¿ v n h an r t *j* 7 / «•* 6 i. ci r nono^zzo ~ O* StrtlCUN Ü UtTÜR V eb hFE at •c V V min max mA V 2N2800 2N2801 2N2837 2N2838 -2N2904 50 50 50 50 60 35 35 35 35


    OCR Scan     		2N2800 2N2801 2N2837 2N2838 -2N2904 2N2904A 2N2905 2N2905A 2N2906 2N2906A 2n3072 PDF

    BUW67

    Abstract: BDX85C bdx86c 2N6383 2N6384 2N6385 2N6648 2N6649 2N6650 BDX85
    Text: 1989963 CEN TRA L SEMICONDUCTOR T i ' deT| ‘ 61C - 0 0 1 9 7 ^ oD oon? i T -33-29 ~ jp POWER DARLINGTON TRANSISTORS METAL IC 10A = TYPE lc hFE@ lc VCE(S) @lc fT Min Mhz Volts Watts Min - Max Amps Volts Amps 10 40 100 1,000-20,000 5.0 2.0 5.0 - 2N6649 10


    OCR Scan     		T-33-29 TEMPERATURE-55Â 2N6383 2N6648 2N6384 2N6649 2N6385 2N6650 BDX85 BDX86 BUW67 BDX85C bdx86c PDF

    Untitled

    Abstract: No abstract text available
    Text: CENTRAL SEMICONDUCTOR □□□□3Db 2 r r - z^ S '-1-3 saiîjÊffüI central CS39-2 i i s n l s o n ä u e f e r C o rp . C e n tra l S e m lc o iiÊ fy e É s r co?f&. SILICON CONTROLLED RECTIFIER central Semiconductor Corp. 2 AMPS 50 THRU 400 VOLTS


    OCR Scan     		CS39-2 CBR10 CBR25Ser/es CBR12 CBR30 C1000SE3 O-105 O-106 PDF

    2N1256 S P

    Abstract: No abstract text available
    Text: CENTRAL SEMICONDUCTOR : ' tï F Ë 1 nfl*nt3 D O O O S n 7 f 1 9 8 9 9 6 3 C E N T R A L SfcMlLUNÜUCTUK 6 1 C “0 0 2 1 9 . T~ 5 l ~ 0 / NPN METAL CAN - LOW IMOISE LEVEL AM PLIFIER ContU VCB 2N3117 2N4383 2N4384 2N4385 2N4386 60 40 40 40 40 V V V hpE min


    OCR Scan     		2N3117 2N4383 2N4384 2N4385 2N4386 CBR10 CBR25Ser/es CBR12 CBR30 C1000SE3 2N1256 S P PDF

    Untitled

    Abstract: No abstract text available
    Text: 61C -00176 :'Y - ° ì - i y 198996.3 CENTRAL SEMICONDUCTOR D00017L. 4 |~~ i ä s L “ Central ieitsl£ iìiHfet@r c o r p - J P ffmiri il K » VX s ^ 3 •&» CRSH5 SERIES eenfral liin ieo n iiu stsr e@rp. ERS SCHOTTKY BARRI1ER RECTI VOLTS 1.0 AMP, 20 THRU


    OCR Scan     		D00017L. CBR10 CBR25Ser/es CBR12 CBR30 C1000SE3 O-105 O-106 PDF

    2N4143

    Abstract: T0105 2N3640 2N5383 2N4122 2N4355 2N4917 2n5139 2N4916
    Text: CENTRAL SEMICONDUCTOR = tï 1989963 CENTRAL SEMICONDUCTOR * 1 DE | . JT.„. DDDDS13 b 61C 00213 - //-°/ PNP EPOXY - SW ITCHING A N D G ENER AL PURPOSE (Cont'd. C0b MHz pF Vcb V CE V eb hFE at •c VCE V V V min max mA V 2N4060 2N4061 2N40622N4121 2N4122


    OCR Scan     		DDDDS13 2N4060 2N4061 2N40622N4121 2N4122 2N4125 2N4126 2N4142 2N4143 2N4228 T0105 2N3640 2N5383 2N4355 2N4917 2n5139 2N4916 PDF

    CBR-12

    Abstract: No abstract text available
    Text: bl CENTRAL SE MICONDU CTOR 40<80 Amperes ^RRM <volts> DOGOlSfl a r T -Ô /-Ô I General Purpose Silicon Power Rectifier deI ^^ £ * "5 4 D I ooooisa 2 | CR40- CR40- CR40- CR40- CR40- CR40- CR40- CR40- 005 0 10 020 040 0 60 08 0 100 120 CR60- CR60- CR60-


    OCR Scan     		CR40005 CR400 CR60010 CR800 CR40020 CR60020 CR40040 CR600 CBR-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1989963 CENTRAI S E M I C O N D UCTOR . ~T ï 61C 0 0 1 9 6 r T - 3 3 - 2 9 o o o o n t, o f ' ~ t ^ 3 & ' 37— POWER DARLINGTON TRANSISTORS EPOXY " IC = 10 A ^ O P E R A T I N G A N D S T O R A G E T E M P E R A T U R E -6 5 °to + 1 5 0 ° C TYPE


    OCR Scan     		2N6387 2N6667 2N6388 2N6668 D44E1 D45E1 D44E2 D45E2 To-126 C1000SE3 PDF

    Untitled

    Abstract: No abstract text available
    Text: na^ta _CENTRAL SEMICONDUCTOR @@^3* S@6û^@@BBG9QBefiOr €@63p. €@Bifrcal SeniBeOBItiUCtOr C S’p. d o o o s t t ^ T ~ T - ¿s '- // CQ92F CQ92A CQ92B CQ92D CQ92M TRI AC 0.8 AMPS 50 THRU 600 VOLTS central semiconductor Corp. 145 Adams Avenue Hauppauge, New York 11788


    OCR Scan     		CQ92F CQ92A CQ92B CQ92D CQ92M CBR10 CBR25Ser/es CBR12 CBR30 C1000SE3 PDF

    1N SERIES DIODE

    Abstract: in 4749A 4733a zener IN 4751A 4744a 4749a 2 Watt Zener Diode in 4743a 4730A zener diode 1n
    Text: Q00D5b4 1 - C E N T R A L SEMICONDUCTOR i ~ r - a - t 3 T 5% Tolerance • Case B 1 Watt Zener Diode Zener Voltage Vz@lz Test Current lz Zener Impedance Zz Volts mA Ohms '/ M ir Zener Voltage V z @ lz Test Current lz Zener Impedance Zz TYPE NO. CENTRAL TYPE NO.


    OCR Scan     		Q00D5b4 C1Z10B C1Z11B C1Z12B C1Z13B C1Z15B C1Z16B C1Z18B C1Z20B C1Z22B 1N SERIES DIODE in 4749A 4733a zener IN 4751A 4744a 4749a 2 Watt Zener Diode in 4743a 4730A zener diode 1n PDF

    Untitled

    Abstract: No abstract text available
    Text: 1989963 CENTRAL CENTRAL 6i r S E M IC O N D U C TO R ; t ï SEMICONDUCTOR noi 94 T-/n_?q D Ë J n f i tn t 3 D G a a im b T POWER DARLINGTON TRANSISTORS EPOXY le = OPERATING AND STO RAGE TEM PE R A T U R E -6 5 °to +150°C 2 .0 A VCE(S) @ 1C fT Min (Typ)


    OCR Scan     		2N6548 2N6549 D40K1 D41K1 D40K2 D41K2 To-126 C1000SE3 O-105 O-106 PDF