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    2N4122 Datasheets (21)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2N4122 Advanced Semiconductor Silicon Transistors Scan PDF
    2N4122 Central Semiconductor PNP EPOXY - SWITCHING AND GENERAL PURPOSE / SATURATED SWITCH Scan PDF
    2N4122 Central Semiconductor PNP Epoxy - Switchin and General Purpose Transistors / Saturated Switch Scan PDF
    2N4122 Micro Electronics Semiconductor Devices Scan PDF
    2N4122 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N4122 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N4122 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N4122 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N4122 Unknown Vintage Transistor Datasheets Scan PDF
    2N4122 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N4122 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2N4122 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N4122 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N4122 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N4122 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N4122 Unknown Cross Reference Datasheet Scan PDF
    2N4122 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N4122 National Semiconductor General Purpose Amplifiers and Switches Scan PDF
    2N4122 National Semiconductor PNP Transistor Scan PDF
    2N4122 National Semiconductor Pro-Electron Transistor Datasheets Scan PDF

    2N4122 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 2N4122-18 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar PNP Device. VCEO = 40V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.1A All Semelab hermetically sealed products


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    PDF 2N4122-18 O206AA) 0/10m 19-Jun-02

    Untitled

    Abstract: No abstract text available
    Text: 2N4122-18 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar PNP Device. VCEO = 40V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.1A All Semelab hermetically sealed products


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    PDF 2N4122-18 O206AA) 0/10m 2-Aug-02

    2N4122-18

    Abstract: 2N4122
    Text: 2N4122-18 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar PNP Device. VCEO = 40V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.1A All Semelab hermetically sealed products


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    PDF 2N4122-18 O206AA) 0/10m 16-Jul-02 2N4122-18 2N4122

    2N4122

    Abstract: UHF UHF Transistors
    Text: 2N4122 Bipolar PNP UHF/Microwave Transisitor 5.74 Transistors UHF. 1 of 1 Home Part Number: 2N4122 Online Store 2N4122 Diodes Bipo lar PNP UHF / M icro w av e Trans is it o r Transistors Enter code INTER3 at


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    PDF 2N4122 com/2n4122 2N4122 UHF UHF Transistors

    k2645

    Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
    Text: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt


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    PDF MK135 MK136 MK137 MK138 MK139 MK140 Mk142 MK145 MK155 157kr k2645 k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417

    2N4122

    Abstract: No abstract text available
    Text: HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| l l Enter Your Part # Home Online Store ¡ Diode s ¡ Transistors ¡ Inte grate d C ircuits ¡ O ptoe le ctronics ¡ Thyristors l Products ¡ Se arch for Parts ¡ R e que st a Q uote ¡ Te st House s


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    PDF 2N4122 O-106

    SSP35n03

    Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
    Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A


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    PDF 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent

    2N4121

    Abstract: 2N5139 2N4917 2N3639 2N4122 2n5138 016 2N4062 2N5383 2N5857 2N5138
    Text: CENTRAL SEMICONDUCTOR = tï 1989963 CENTRAL SEMICONDUCTOR * 1 DE | . JT.„. DDDDS13 b 61C 00213 - //-°/ PNP EPOXY - SW ITCHING A N D G ENER AL PURPOSE (Cont'd. V cb V CE V eb hFE at •c VCE V V V min max mA V V 2N4060 2N4061 2N40622N4121 2N4122 30 30


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    PDF DDDDS13 2N4060 2N4061 2N4062- 2N4121 O-106 2N4122 O-106. 2N4125 2N4126 2N5139 2N4917 2N3639 2n5138 016 2N4062 2N5383 2N5857 2N5138

    2N4143

    Abstract: T0105 2N3640 2N5383 2N4122 2N4355 2N4917 2n5139 2N4916
    Text: CENTRAL SEMICONDUCTOR = tï 1989963 CENTRAL SEMICONDUCTOR * 1 DE | . JT.„. DDDDS13 b 61C 00213 - //-°/ PNP EPOXY - SW ITCHING A N D G ENER AL PURPOSE (Cont'd. C0b MHz pF Vcb V CE V eb hFE at •c VCE V V V min max mA V 2N4060 2N4061 2N40622N4121 2N4122


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    PDF DDDDS13 2N4060 2N4061 2N40622N4121 2N4122 2N4125 2N4126 2N4142 2N4143 2N4228 T0105 2N3640 2N5383 2N4355 2N4917 2n5139 2N4916

    2N4121

    Abstract: 2N5855 2N4916 case to106 N5040 2N3639 2N4355 2N4917 2N5383 2N3640
    Text: PNP EPOXY - SWITCHING AND GENERAL PURPOSE Cont'd. TYPE NO. Vcb VCE V eb hFE at •c VCE V V V min max mA V 2N4060 2N4061 2N40622N4121 2N4122 30 30 30 40 40 30 30 30 . 40 40 6 6 6 5 5 45 90 180 70 150 _ "— 200 300 1 1 1 10 10 5 5 5 1 1 0.3 0.4 5 5 2N4125


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    PDF 2n4060 to-98 2n4061 2n4062- 2n4121 to-106 2n4122 t0-106 2N5855 2N4916 case to106 N5040 2N3639 2N4355 2N4917 2N5383 2N3640

    2N5041

    Abstract: 2N4228 2N4122 2N4121 2N3639 2N5383 2N4355 2N4917 2N5139 2N5143
    Text: CENTRAL SEMICONDUCTOR = tï 1989963 CENTRAL SEMICONDUCTOR * 1 DE | . JT.„. DDDDS13 b 61C 00213 - //-°/ PNP EPOXY - SW ITCHING A N D G ENER AL PURPOSE (Cont'd. V cb V CE V eb hFE at •c VCE V V V min max mA V V 2N4060 2N4061 2N40622N4121 2N4122 30 30


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    PDF DDDDS13 2N4060 2N4061 2N4062- 2N4121 O-106 2N4122 O-106. 2N4125 2N4126 2N5041 2N4228 2N3639 2N5383 2N4355 2N4917 2N5139 2N5143

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    2N4122

    Abstract: 2N4121 2N4134 2n3771 2N4080 2N4135 2N3713 2N3714 2N3715 2N3716
    Text: 02 58354 ADVANCED SEMICO ND UC TOR_ _ ADVANCED S E M I C O N D U C T O R - 05 DE I 0 E S Ô 3 S 4 82 D 00044 DDDDD44 □ D 7"w- s 2— o S I L I C O N _« _ _ THAPJSISTOfiS Pd DEVICE TYPE NO. 2N3713 2N3714 2N3715 2N3716 2N3734 2N3735 2N3740 2N3741


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    PDF DDD44 2N3713 2N3714 2N3715 2N3716 2N3734 2N3735 2N3740 2N3741 2N3742 2N4122 2N4121 2N4134 2n3771 2N4080 2N4135

    2N3638

    Abstract: 2N4121 2N4945 TO-106 2N4122 SE1001 2N5855
    Text: TRANSISTORS—SMALL SIGNAL NPN GENERAL PURPOSE AMPLIFIER AND SWITCHING TRANSISTORS BY ASCENDING VCEO PLASTIC PACKAGE Continued (ALSO SEE LOW LEVEL AN D HIGH VOLTAGE SECTION) V CEO SZ cc LU O > (hfe) LU LL V CE(sat) Cob fT PD ^off MHz ns mA MAX MIN MAX mW


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    PDF 2N4969 2N3641 2N4436 EN697 MPSA10 MPSA20 2N3904 2N3903 EN3903 MPS6531 2N3638 2N4121 2N4945 TO-106 2N4122 SE1001 2N5855

    2N5139

    Abstract: 2N4121 2N4122 EN3904 2n3569 2n3569 to-105 2n4355 2N3906/MPSA70
    Text: TRANSISTORS—SMALL SIGNAL PNP GENERAL PURPOSE AMPLIFIER AND SWITCHING TRANSISTORS BY ASCENDING VcEO PLASTIC PACKAGE (ALSO SEE LOW LEVEL AND HIGH VOLTAGE SECTION) *V CER * VOLTS TYPE MIN V CE(sat) LU LL V CEO VOLTS @ *c mA MAX hlFE MIN - MAX @ @ 50 @ 2N5221


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    PDF 2N5221 2N5139 2N5142 2N5143 MPS6563 MPS6519 2N4126 2N3638A MPS3638A MPS3702 2N4121 2N4122 EN3904 2n3569 2n3569 to-105 2n4355 2N3906/MPSA70

    2N4121

    Abstract: 2N5219 2N5139 2N4126 2N4122 2N3566 TO-105 2N3566
    Text: TRANSISTORS—SMALL SIGNAL NPN GENERAL PURPOSE AMPLIFIER AND SWITCHING TRANSISTORS BY ASCENDING V C E 0 PLASTIC PACKAGE (ALSO SEE LOW LEVEL AND HIGH VO LTAGE SECTION) hFE V CEO ^ob V C E (sat) tT toff PD \ <v c e r VOLTS TYPE MIN (hfe ) ) Ta @ ’c hFE


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    PDF 2N5128 2N5129 2N5219 2N4121 2N5139 2N4126 2N4122 2N3566 TO-105 2N3566

    1.0 k mef 250

    Abstract: ME4003 ME4002 MA0411 transistor me6101 transistor BC 172B 2N2959 transistor bf 175 2N5173 2n3072
    Text: INTRODUCTION This is Micro Electronics latest short form catalogue on discrete semi-conductor devices. We have introduced many new products since the previous publication. This guide provides a quick reference on the characteristics o f our products. Separate data sheets for a


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    PDF semi-820 BYX22-400 BYX22-600 BYX22-800 BYX26-60 YX26-150 BYX36-1 BYX36-300 1.0 k mef 250 ME4003 ME4002 MA0411 transistor me6101 transistor BC 172B 2N2959 transistor bf 175 2N5173 2n3072

    Untitled

    Abstract: No abstract text available
    Text: _ _ ADVANCED 0 2 5 8 3 5 4 ADVANCED SEMICONDUCTOR SEMI CONDUCTOR - flâ D Ë loaSÔ B S 4 82D 0 0 0 4 4 0000044 D S IL IC O N _ _ _ _ « _ _T Ü A P J S iS T O fiS Pd @ Tc=25°C DEVICE TYPE NO. 2N3713 2N3714 2N3715 2N3716 2N3734


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    PDF 2N3713 2N3714 2N3715 2N3716 2N3734 2N3735 2N3740 2N3741 2N3742 2N3743

    2N4148

    Abstract: 2N3638 transistor 2N3638 Transistor 2n3005 2N2706 2N3731 2n4146 transistor 2n2706 2N4250 2N4147
    Text: DIGITRON ELECTRONIC CORP 3bE D SfiMStrO? 0□ □ □ □ □ S DGE Page #5 DIQITRON ELECTRONIC” 110 Hillside Avenue • Springfield, New Jersey 07081 • 201-379-9016 • 201-379-9019 Fax J O H N J. S C H W A R T Z ENGINEERING D I G I T R O N E LE C TR ON IC S , CORP.


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    PDF 2N2419A 2N3001 2N3730 2N4002 2N4140 2N4299 2N2483 2N3002 2N3731 2N4003 2N4148 2N3638 transistor 2N3638 Transistor 2n3005 2N2706 2n4146 transistor 2n2706 2N4250 2N4147

    LG color tv Circuit Diagram schematics

    Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    PDF 3186J LG color tv Circuit Diagram schematics free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007

    hep 154 silicon diode

    Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
    Text: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes­ sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This


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    PDF MY110B Z0206 Z0208 Z0210 Z0211 Z0212 Z0214 Z0215 Z0217 Z0219 hep 154 silicon diode zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp

    RCA SK CROSS-REFERENCE

    Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
    Text: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered


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    Transistor 2SA 2SB 2SC 2SD

    Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
    Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle


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    PDF

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


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    PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711