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    C 2944 TRANSISTOR Search Results

    C 2944 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    CA3082 Rochester Electronics LLC Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    CA3081F Rochester Electronics LLC Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    C 2944 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N2007

    Abstract: 2N3401 2n2002 transistors 2n 945 2sc 1919 2N2337 2N2003 2N945 2N1917 2N2944
    Text: small signal transistors 69 SILICON CHOPPER TRANSISTORS TO-18 TO-5 NUMBERS NUMBERS RATED BREAKDOWN VOLTAGES Vca I VCE I VES VEC OFS r ec(on) I Max. I. (Ohms) (rnA) Max. (mV) Is i(,uA) -1.5 -2.5 -1.0 -3.0 -10 -1.0 -2.S -1.5 -3.5 -2.0 -3.0 -1.0 -3.5 -2.0 -3.5


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    S 9018 H 331 transistor

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTOR CD 9018 TO-92 Plastic Package ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise DESCRIPTION SYMBOL VCEO Collector Emitter Voltage


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    PDF C-120 CD9018Rev060901 S 9018 H 331 transistor

    S 9018 H 331 transistor

    Abstract: S 9018 H 331 S 9018 to-92 transistor c 9018 S 9018 g 331 transistor 9018 NPN 9018 60MHZ CD9018E CD9018F
    Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR TRANSISTOR CD 9018 TO-92 Plastic Package ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise DESCRIPTION SYMBOL


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    PDF C-120 CD9018Rev060901 S 9018 H 331 transistor S 9018 H 331 S 9018 to-92 transistor c 9018 S 9018 g 331 transistor 9018 NPN 9018 60MHZ CD9018E CD9018F

    S 9018 H 331 transistor

    Abstract: transistor c 9018 S 9018 H 331 9018 equivalent of 9018 transistor 60MHZ CD9018D CD9018E CD9018F transistor 9018 NPN
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTOR CD 9018 TO-92 Plastic Package ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise DESCRIPTION SYMBOL VCEO Collector Emitter Voltage


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    PDF C-120 CD9018Rev060901 S 9018 H 331 transistor transistor c 9018 S 9018 H 331 9018 equivalent of 9018 transistor 60MHZ CD9018D CD9018E CD9018F transistor 9018 NPN

    CD9011

    Abstract: No abstract text available
    Text: IS / IECQC 700000 IS / IECQC 750100 IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR TRANSISTOR ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector -Emitter Voltage Collector -Base Voltage


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    PDF CD9011 100uA, C-120 CD9011

    CD9011

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTOR ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector -Emitter Voltage Collector -Base Voltage Emitter Base Voltage Collector Current Power Dissipation


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    PDF CD9011 100uA, C-120 CD9011

    CD9011

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company NPN SILICON PLANAR TRANSISTOR ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector -Emitter Voltage Collector -Base Voltage Emitter Base Voltage Collector Current Power Dissipation Operating And Storage Junction


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    PDF ISO/TS16949 CD9011 100uA, C-120 CD9011

    TRANSISTOR J 5804

    Abstract: j 5804 transistor j 5804 8205 A mosfet transistor 5910 6811 brushless pwm ac chopper 8205 dual mosfet BIT 3195 TMIS-3185/480/3P
    Text: TABLE OF CONTENTS General Information . page 2 Product Selection Guides • ■ ■ ■ ■ ■ ■ ■ Power Sink Drivers . 3


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    BIT 3195 G

    Abstract: TRANSISTOR 5804 transistor 5910 2878 transistor ma 8920 regulator darlington array 2804 BIT 3195 8205 A mosfet 8205 mosfet 5810-FQ
    Text: Allegro MicroSystems Fax-on-Demand: 1-888-286-9288 Outside North America: 1-202-216-1827 ICs and PMCMs PRODUCT INDEX in NUMERICAL ORDER Part Number* Description 8932-A 8958 Motor Drivers Quad, 1.8 A, 50 V Darlington Power Driver Quad, 1.8 A, 50 V Darlington Power Driver


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    PDF 932-A BIT 3195 G TRANSISTOR 5804 transistor 5910 2878 transistor ma 8920 regulator darlington array 2804 BIT 3195 8205 A mosfet 8205 mosfet 5810-FQ

    TRANSISTOR J 5804

    Abstract: 3240C SLA40 motor driver full bridge 5A motor driver full bridge 6A pwm ac chopper j 5804 transistor Shortform Transistor Guide
    Text: TABLE OF CONTENTS General Information . page 2 Product Selection Guides • ■ ■ ■ ■ ■ ■ ■ Power Sink Drivers . 3


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    2n2946

    Abstract: 2945A 2N2944
    Text: TYPES 2N2944, 2N2945, 2N2946. 2N2944A, 2N2945A, 2N2946A P-N-P SILICON TRANSISTORS B U L L E T I N NO. OL- S 6 7 9 5 6 1 . MARCH 19 67 FOR LOW-LEVEL, HIGH-SPEED CHOPPER APPLICATIONS IN INVERTED CONNECTION • Low Guaranteed Offset Voltage • High Emitter-Base Breakdown Voltage


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    PDF 2N2944, 2N2945, 2N2946. 2N2944A, 2N2945A, 2N2946A 2N2944A) 2N2432A 2N2945 2n2946 2945A 2N2944

    C 2944 transistor

    Abstract: No abstract text available
    Text: ALLEGRO MICROSYSTEMS INC ^3 D • 05014330 000373=1 1 ■ ALGR T-91-01 PROCESS VRB Process VRB NPN Small-Signal Transistor Process VRB is an NPN double-diffused silicon epitaxial planar transistor designed for generalpurpose amplifier and switching circuits.


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    PDF 05D433S T-91-01 T-9U01 -H08J C 2944 transistor

    2n3910

    Abstract: 2N3914 2n3219 2N4260 2N2708 2N3218 2N4209 2N915 2N2004 2N2333
    Text: Discrete Devices Transistors Cont. Choppers M axim um Ratings Polarity PD Ambient h f e @ >c VCE V e B Volts Volts Min/Max m A II Type Electrical Characteristics @ 25° C V c E (S a t) @ Ic/lß m A/m A mV — 2.0 rd@l B mA Ohms Cob mA Package pF M ax 2N 943


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    PDF 2N943 T0-18 2N2004 2N2333 2N2944 2N2945 2N2945A 2N2946 2N2946A 2N2865 2n3910 2N3914 2n3219 2N4260 2N2708 2N3218 2N4209 2N915

    BT2222A

    Abstract: BT2222 2N2222 BT3501 BT51 2N2708 2N2944 2N2483 2N24B4 2N929
    Text: Discrete Devices Beam Lead Chips Transistor Chips 1 0 0 % Probed Parameters @ 2 5 ° C Partial List Function Polarity Similar Typ e BVCBO Volts E IA ly p e M in @ 10 n A BVCEO Volts M in @ 10 m A BVe b O V olts M in @ 1 0 u A Hf e @ Ic mA M in/M ax Mech.


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    PDF BT929 2N929 BT930 2N930 BT2483 2N2483 BT2484 2N24B4 BT2604 2N2604 BT2222A BT2222 2N2222 BT3501 BT51 2N2708 2N2944

    2N4007

    Abstract: BC140 equivalent 2N4007 equivalent TRANSISTOR pnp BC140 TRANSISTOR BC140 BC141 equivalent 2N3060 BC179C TRANSISTOR BC109b bc108b equivalent
    Text: SPRAGUE Metal-Encased Silicon S E P T R Transistors HIGH-VOLTAGE VIDEO OUTPUT TRANSISTOR >- Type No. os < Pd T* = 25 C s V BR Ic B O CEO V o lts EBO V o lts iiA lc Watts CBO V olts Max. (m A) 1.0 300 250 7 ' Lim ts Con dition s V <BR) NPN 2N3440 D-C C U R R E N T G A I N ( h FE)


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    PDF 2N3440 O-450 BC108A BC108B BC108C BC109B BC109C BC110 BC177A BC177B 2N4007 BC140 equivalent 2N4007 equivalent TRANSISTOR pnp BC140 TRANSISTOR BC140 BC141 equivalent 2N3060 BC179C TRANSISTOR BC109b bc108b equivalent

    SY 360 05

    Abstract: BT2222A 2n22 2N706 2N706A 2N706B 2N706C 2N708 2N743 2N743A
    Text: Discrete Devices Transistors Cont. Ultra High-Speed Logic Switches Electrical Characteristics @ 25° C Maxim um Ratings M Vcb Volts . NPN PD Ambient £1 Type VEB Volts h fe V c E (S a t) @ I q /I b @ ic Min/Max mA Volts m A/m A ft MHz Cob PF M ax tON ns


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    PDF 2N706 2N706A 2N706B 2N706C 2N708 2N743 2N743A 2N744 BT2946 2N2946 SY 360 05 BT2222A 2n22

    2N3134

    Abstract: 2N3135 2N3136 2N3250 2N3250A 2N3251A 2N3299 2N3300 2N3302 BT2907A
    Text: Transistors Cont. Discrete Devices Medium Current, High-Speed Amplifiers (Cont.) Maxim um Ratings Type Polarity PD Ambient mW Electrical Characteristics @ 25° C V c b VCE V e b Volts Volts Volts V C E (Sat) lc /l„ H f e @ >C Min/Max mA Volts m A/m A


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    PDF 2N3134 2N3135 2N3136 2N3250 2N3250A 2M3251 2N3251A BT2946 2N2946 BT3999 2N3299 2N3300 2N3302 BT2907A

    2N1026

    Abstract: 2N1025 2N328A 2N760A 2N2708 2N327A 2N327B 2N328B 2N329A 2N329B
    Text: Discrete Devices Transistors Cont. Low Level Amplifiers Maxim um Ratings Type Polarity Pd Ambient mW Electrical Characteristics @ 25° C VCB VCE V e b Volts Volts Volts V c E (S a t) @ Ic / lß H p E *C Min/Max mA Volts m A/m A ft MHz Min NF@f Cob pF


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    PDF 2N327A 2N327B 2N328A 2N328B 2N329A 2N329B 2N760 2N760A BT2946 2N2946 2N1026 2N1025 2N2708

    2sd 4242

    Abstract: c 3866 2SC4977 C3866 c 4242 c3505 C2656 2sd2431 I50F C4383
    Text: BIPOLAR TRANSISTORS Quick Selection Guide Comprehensive chart C o lle c to r c u rre n t le co n t. A P N P t r a n s is t o r VcEO (sus) V o lts m in . C o lle c to r-to e m itt e r v o lta g e 40 50 80 100 120 180 200 2 50 300 320 350 400 2S C 2929 3 2 S D 1 1 57


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    PDF B1532 7S0916 2SD2431 1300M I200E I200ZP 2sd 4242 c 3866 2SC4977 C3866 c 4242 c3505 C2656 I50F C4383

    2n3219

    Abstract: 2N4260 RAYTHEON 2N3635 2N2004 2N2708 2N3910 2N3960 2N4261 2N915 2N2333
    Text: Discrete Devices Transistors Cont. Choppers M axim um Ratings Polarity PD Ambient h f e @ >c VCE V e B Volts Volts Min/Max m A II Type Electrical Characteristics @ 25° C V c E (S a t) @ Volts m A/m A mV — 2.0 rd@lB mA Ohms Cob mA Package pF M ax 2N 943


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    PDF 2N943 T0-18 2N2004 2N2333 2N2944 2N2945 2N2945A 2N2946 2N2946A BT2946 2n3219 2N4260 RAYTHEON 2N3635 2N2708 2N3910 2N3960 2N4261 2N915

    2N3053 NPN transistor

    Abstract: BT2222A 2N22 BT2222 2N2897 2N2898 2N2899 2N2900 2N3019 2N3020
    Text: Discrete Devices Transistors Cont. General Purpose Amplifiers (Cont.) Electrical Characteristics @ 25° C Maximum Ratings Type Polarity PD Ambient mW 2N2897 NPN 2N2898 NPN NPN 2N2899 2N2900 2N3019 2N3020 2 N 3036 2N3053 NPN NPN NPN NPN NPN VCB Volts VCE


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    PDF 2N2897 2N2898 2N2899 2N2900 2N3019 2N3020 2N3036 2N3053 BT2946 2N2946 2N3053 NPN transistor BT2222A 2N22 BT2222

    NPN transistor 2n2222A plastic package to116

    Abstract: SP3725QDB BT2907A 2N5146 2N3244 2N3245 2N3252 2N3253 2N3444 2N3467
    Text: Transistors Cont. Discrete Devices Space Saving Devices Maximum Ratings Electrical Characteristics @ 25° C Am bient P q Type Polarity One Both Side Sides mW mW VCB Volts Vce Volts V eb Volts Min/Max Frequency V c e (Sat) @ i c /i B H f e @ ic mA Volts Package


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    PDF SP3763Q0 sp3763qf O-116 SP3725QDB SP34G7ADB O-116 BT2946 2N2946 BT3999 NPN transistor 2n2222A plastic package to116 BT2907A 2N5146 2N3244 2N3245 2N3252 2N3253 2N3444 2N3467

    NPN transistor 2n2222A

    Abstract: 2N2708 2N1132A 2N1132B 2N2217 2N2218 2N2218A 2N2219 2N2219A 2N2220
    Text: Discrete Devices Transistors Cont. Medium Current, High-Speed Amplifiers Electrical Characteristics @ 25° C Maximum Ratings Type Polarity PD Ambient mW VCB VCE VEB Volts Volts Volts hfe VcE(Sat) @ Ic/lß @ ic Min/Max mA Volts mA/mA ft MHz Min Cob pF Max


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    PDF 2N721A 2N722A 2N1132A 2N1132B 2N2217 2N2218 2N2218A BT2946 2N2946 BT3999 NPN transistor 2n2222A 2N2708 2N2219 2N2219A 2N2220

    MMBR911L

    Abstract: MPS911
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line M PS911 M M B R 911L NPN Silicon High Frequency Transistors . . d e sig ned for lo w noise, w id e d y n a m ic ran g e front-end am p lifiers and low -noise V C O ’s. A v a ila b le in a surface-m oun table plastic package, as w ell as the popular


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    PDF PS911 O-226AA A/500 MMBR911L MPS911