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    BV08 Search Results

    BV08 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    9DBV0841AKILFT Renesas Electronics Corporation 8-Output 1.8V PCIe Gen1-3 Zero-Delay/Fanout Clock Buffer Visit Renesas Electronics Corporation
    9DBV0831AKILF Renesas Electronics Corporation 8-Output 1.8V PCIe Zero-Delay/Fanout Clock Buffer Visit Renesas Electronics Corporation
    9SBV0802AKILF Renesas Electronics Corporation Dual 1:4 Fanout Buffer with 1.0V Single-Ended Inputs and Outputs Visit Renesas Electronics Corporation
    9DBV0831AKILFT Renesas Electronics Corporation 8-Output 1.8V PCIe Zero-Delay/Fanout Clock Buffer Visit Renesas Electronics Corporation
    9SBV0802AKILFT Renesas Electronics Corporation Dual 1:4 Fanout Buffer with 1.0V Single-Ended Inputs and Outputs Visit Renesas Electronics Corporation
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    BV08 Price and Stock

    Renesas Electronics Corporation 9SBV0802AKILFT

    9SBV0802A DUAL 1:4 1V SINGLE END
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    DigiKey 9SBV0802AKILFT Cut Tape 2,348 1
    • 1 $9.52
    • 10 $8.816
    • 100 $7.5443
    • 1000 $6.86217
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    9SBV0802AKILFT Digi-Reel 1
    • 1 $9.52
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    • 100 $7.5443
    • 1000 $6.86217
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    9SBV0802AKILFT Reel 2,500
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    Avnet Americas 9SBV0802AKILFT Reel 26 Weeks, 1 Days 2,500
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    Mouser Electronics 9SBV0802AKILFT
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    Newark 9SBV0802AKILFT Reel 2,500
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    Avnet Silica 9SBV0802AKILFT 13 Weeks 2,500
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    Renesas Electronics America 9SBV0802AKILFT Tape & Reel (TR) 2,348 1
    • 1 $9.52
    • 10 $8.816
    • 100 $7.5443
    • 1000 $6.86217
    • 10000 $6.57497
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    Renesas Electronics Corporation 9DBV0841AKILF

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    DigiKey 9DBV0841AKILF Tray 1,707 1
    • 1 $3.63
    • 10 $3.261
    • 100 $2.67213
    • 1000 $2.41249
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    Avnet Americas 9DBV0841AKILF Tray 26 Weeks, 1 Days 490
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    Mouser Electronics 9DBV0841AKILF 295
    • 1 $3.63
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    Newark 9DBV0841AKILF Bulk 477 1
    • 1 $3.78
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    • 100 $2.64
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    Avnet Silica 9DBV0841AKILF 13 Weeks 490
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    Renesas Electronics America 9DBV0841AKILF Tray 1,707 1
    • 1 $3.63
    • 10 $3.261
    • 100 $2.67213
    • 1000 $2.41249
    • 10000 $2.41249
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    Renesas Electronics Corporation 9DBV0841AKLF

    IC CLOCK BUFFER 48MLF
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    DigiKey 9DBV0841AKLF Tray 525 1
    • 1 $3.41
    • 10 $3.059
    • 100 $2.506
    • 1000 $2.26249
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    Mouser Electronics 9DBV0841AKLF 650
    • 1 $3.41
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    • 100 $2.38
    • 1000 $2.26
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    Newark 9DBV0841AKLF Bulk 1
    • 1 $6.02
    • 10 $5.42
    • 100 $4.28
    • 1000 $3.6
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    Renesas Electronics America 9DBV0841AKLF Tray 525 1
    • 1 $3.41
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    • 100 $2.506
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    Renesas Electronics Corporation 9DBV0831AKILF

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    DigiKey 9DBV0831AKILF Tray 460 1
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    • 100 $3.80113
    • 1000 $2.72902
    • 10000 $2.59257
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    Avnet Americas 9DBV0831AKILF Tray 26 Weeks, 1 Days 490
    • 1 $2.14444
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    Mouser Electronics 9DBV0831AKILF
    • 1 $5.17
    • 10 $3.81
    • 100 $3.61
    • 1000 $2.52
    • 10000 $2.52
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    Avnet Silica 9DBV0831AKILF 13 Weeks 490
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    Renesas Electronics America 9DBV0831AKILF Tray 460 1
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    • 100 $3.80113
    • 1000 $2.72902
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    Renesas Electronics Corporation 9DBV0831AKLF

    IC CLOCK BUFFER 48MLF
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    DigiKey 9DBV0831AKLF Tray 400 1
    • 1 $4.84
    • 10 $4.351
    • 100 $3.56475
    • 1000 $2.55934
    • 10000 $2.43137
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    Avnet Americas 9DBV0831AKLF Tray 26 Weeks, 1 Days 490
    • 1 $2.01111
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    Mouser Electronics 9DBV0831AKLF 430
    • 1 $4.84
    • 10 $3.57
    • 100 $3.39
    • 1000 $2.41
    • 10000 $2.4
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    Renesas Electronics America 9DBV0831AKLF Tray 400 1
    • 1 $4.84
    • 10 $4.351
    • 100 $3.56475
    • 1000 $2.55934
    • 10000 $2.43137
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    BV08 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor f422

    Abstract: transistor f423 f422 transistor transistor f421 BV09 F423 fet 13187 RJ4B L442 bvoe
    Text: CMOS-8LCX 3-VOLT, 0.50-MICRON CMOS GATE ARRAYS CROSSCHECK TEST SUPPORT NEC Electronics Inc. Preliminary Description October 1993 Figure 1. Various CMOS-8LCX Packages NEC’s 3-volt CMOS-8LCX family consists of ultra-high performance, sub-micron gate arrays, targeted for


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    PDF 50-MICRON PD658xx transistor f422 transistor f423 f422 transistor transistor f421 BV09 F423 fet 13187 RJ4B L442 bvoe

    Untitled

    Abstract: No abstract text available
    Text: DATASHEET BV0831 8-OUTPUT VERY LOW POWER PCIE GEN1-2-3 BUFFER Description Features/Benefits The BV0831 is an 8-output very low power buffer for 100MHz PCIe Gen1, Gen2 and Gen3 applications. It can also be used for 50M or 125M Ethernet Applications via


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    PDF 9DBV0831 9DBV0831 100MHz

    A12212

    Abstract: 702 sot 23 74284 MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR 364-pin A12-212 circuit diagram for simple IR robots marking h02 sot 363 RBHB RSB 7900
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


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    PDF d588-6130 A12212 702 sot 23 74284 MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR 364-pin A12-212 circuit diagram for simple IR robots marking h02 sot 363 RBHB RSB 7900

    BV0831AIL

    Abstract: DBV0831AL 9DBV0831
    Text: DATASHEET BV0831 8-OUTPUT VERY LOW POWER PCIE GEN1-2-3 BUFFER Description Features/Benefits The BV0831 is an 8-output very low power buffer for 100MHz PCIe Gen1, Gen2 and Gen3 applications. It can also be used for 50M or 125M Ethernet Applications via


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    PDF 9DBV0831 9DBV0831 100MHz BV0831AIL DBV0831AL

    bv0T

    Abstract: F423 FV06 RJ4B 83YL-9164B "Single-Port RAM" B00J transistor f423 bewf diode ru4d
    Text: CMOS-8L 3-VOLT, 0.50-MICRON CMOS GATE ARRAYS NEC Electronics Inc. Preliminary Description October 1993 Figure 1. Various CMOS-8L Packages NEC’s 3-volt CMOS-8L family consists of ultra-high performance, sub-micron gate arrays, targeted for applications requiring extensive integration and high


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    PDF 50-MICRON PD658xx bv0T F423 FV06 RJ4B 83YL-9164B "Single-Port RAM" B00J transistor f423 bewf diode ru4d

    bdv 83 do

    Abstract: CMOS-9HD A15647EE1V0DS00 ea-9hd
    Text: Preliminary User’s Manual System-on-Chip Lite Gate Array with ARM7TDMI Subsystem, 32-Bit RISC CPU Core Hardware µPD65977S1-xxx-B6 Document No. A15402EE1V0UM00 Date Published August 2001  NEC Corporation 2001 Printed in Germany NOTES FOR CMOS DEVICES


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    PDF 32-Bit PD65977S1-xxx-B6 A15402EE1V0UM00 sta8-6130 bdv 83 do CMOS-9HD A15647EE1V0DS00 ea-9hd

    bv0T

    Abstract: bv0e NEC L213 FO09B2 f57a EB S913 l914 F204A L462 D1H01
    Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社


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    PDF PD6782X PD6783X A11957XJ2V0UM00 bv0T bv0e NEC L213 FO09B2 f57a EB S913 l914 F204A L462 D1H01

    se617

    Abstract: SE641 transistor f423 sd667 transistor hh 004 transistor f422 bv0T F423 n010x L442
    Text: Block Library CMOS-9HD Family, EA-9HD Family CMOS Gate Array, CMOS Embedded Array Ver.6.0 Document No. Date Published A13052EJ6V0BL00 6th edition December 2000 NS CP(K) NEC Corporation 1997 Printed in Japan [MEMO] Block Library A13052EJ6V0BL Summary of Contents


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    PDF A13052EJ6V0BL00 A13052EJ6V0BL se617 SE641 transistor f423 sd667 transistor hh 004 transistor f422 bv0T F423 n010x L442

    Untitled

    Abstract: No abstract text available
    Text: DATASHEET 8-OUTPUT VERY LOW POWER PCIE GEN1-2-3 BUFFER 9 DBV 0 8 4 1 Description Features/Benefits The BV0841 is an 8-output very low power buffer for 100MHz PCIe Gen1, Gen2 and Gen3 applications with integrated output terminations providing Zo=100Ω. It can


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    PDF 9DBV0841 100MHz

    Untitled

    Abstract: No abstract text available
    Text: DATASHEET BV0841 8-OUTPUT VERY LOW POWER PCIE GEN1-2-3 BUFFER Description Features/Benefits The BV0841 is an 8-output very low power buffer for 100MHz PCIe Gen1, Gen2 and Gen3 applications with integrated output terminations providing Zo=100. It can


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    PDF 9DBV0841 9DBV0841 100MHz

    A15647EE2V0DS00

    Abstract: A15402EE1V0UM00 CMOS-9HD ea-9hd number of pins of ARM7 bv08
    Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD65977S1-xxx-B6 SYSTEM-ON-CHIP LITE GATE ARRAY WITH ARM7TDMI SUBSYSTEM HARDWARE DESCRIPTION The System-on-Chip Lite "SoCLite" is based on standard ASIC technology and consists of two blocks: an ARM7TDMI based subsystem and a sea-of-gates area. The ARM subsystem is fully designed and verified as a


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    PDF PD65977S1-xxx-B6 A15647EE2V0DS00 A15402EE1V0UM00 CMOS-9HD ea-9hd number of pins of ARM7 bv08

    MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR

    Abstract: uPD65837 uPD65869 X17512 upd65839 RF Transistors Ceramic MARKING F25 marking code F302 535 D65841 uPD65851 X46358
    Text: Design Manual CMOS-8L Family CMOS Gate Array Ver. 5.0 Document No. A12158EJ5V0DM00 5th edition Date Published June 1999 N CP(K) 1997, 1998 Printed in Japan 1 [MEMO] 2 Design Manual A12158EJ5V0DM00 NOTES FOR CMOS DEVICES 1 PRECAUTION AGAINST ESD FOR SEMICONDUCTORS


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    PDF A12158EJ5V0DM00 Semiconductor2/9044 MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR uPD65837 uPD65869 X17512 upd65839 RF Transistors Ceramic MARKING F25 marking code F302 535 D65841 uPD65851 X46358

    9DBV0841AKILF

    Abstract: RW resistor BV0841AIL 9FG432AKLF GEN-12
    Text: DATASHEET BV0841 8-OUTPUT VERY LOW POWER PCIE GEN1-2-3 BUFFER Description Features/Benefits The BV0841 is an 8-output very low power buffer for 100MHz PCIe Gen1, Gen2 and Gen3 applications with integrated output terminations providing Zo=100Ω. It can


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    PDF 9DBV0841 9DBV0841 100MHz 9DBV0841AKILF RW resistor BV0841AIL 9FG432AKLF GEN-12

    bv0T

    Abstract: L442 S964 yn 1018 f57a S774 5 input nand gate TB 1226 EN NEC 2705 L-6034
    Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社


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    PDF PD6782X PD6783X A11957XJ2V1UM00 bv0T L442 S964 yn 1018 f57a S774 5 input nand gate TB 1226 EN NEC 2705 L-6034

    Tektronix schematic

    Abstract: schottky transistor spice tektronix custom
    Text: TEKTRONIX INC/ INTEGRATE» EIE D a m iS M G 0D011E t> CIRCUITS OPERATION v V :£>“ • SPECIFICATIONS '^1 BIPOLAR PRODUCTS AND FOUNDRY S E R V I C E S ^ S ^ ^ v ^ V - ORDERING INFORMATIONj TEK INTEGRATED QUICKCHIP 2K FAMILY OF INTEGRATED CIRCUIT ARRAYS WITH SCHOTTKY


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    PDF 0D011E Tektronix schematic schottky transistor spice tektronix custom

    transistor f422

    Abstract: transistor f423 F422 transistor transistor f421 nec product naming rule BK-DK
    Text: i O 1993 iir n r, . . NEC E le ctro n ics Inc. Prelim inary Description CMOS-8LCX 3-VOLT, 0.50-M ICRON CMOS GATE ARRAYS c ro s s c h e c k te s t s u p p o rt February 1993 Figure 1. Various CMOS-8LCX Packages NEC’s 3-volt CMOS-8LCX family are ultra-high perform­


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    PDF iPD658xx transistor f422 transistor f423 F422 transistor transistor f421 nec product naming rule BK-DK

    EATON CM20A

    Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
    Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main


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    PDF

    bv0T

    Abstract: 658X
    Text: N E C ELECTRONICS INC b7E D • b4E75S5 QQ3T701 4bD HINECE CMOS-8L 3 -V O LT, 0.50-M IC R O N cm os g a te a r r a y s ä I M t L NEC Electronics Inc. P re lim in a r y Description October 1993 Figure 1. Various CMOS-8L Packages NEC’s 3-volt CMOS-8L family consists of ultra-high per­


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    PDF b4E75S5 QQ3T701 nPD658xx bv0T 658X

    Untitled

    Abstract: No abstract text available
    Text: SFR/U9220 Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ BVdss = -200 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 fiA Max. @ VDS = -200V


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    PDF SFR/U9220 -200V

    transistor f422

    Abstract: transistor f423 BKDF f422 transistor B00J f422 F423 fet 13187 RJ4B ru4f
    Text: N E C ELECTRONICS INC b7E D NEC NEC Electronics Inc. I b *427525 Q D 3 ci 7 n bTD « N E C E CMOS-8LCX 3-VOLT, O.5O-MICRON CMOS GATE ARRAYS CROSSCHECK TEST SUPPORT Prelim inary Description O c to b e r 1 9 9 3 Figure 1. Various CMOS-8LCX Packages N EC 's 3-volt C M O S -8L C X family consists of ultra-high


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    PDF xPD658xx transistor f422 transistor f423 BKDF f422 transistor B00J f422 F423 fet 13187 RJ4B ru4f

    diode ru4d

    Abstract: ru4f bvde RJ4B 364-pin ITT 2222 A rj8b diode ru4d compatible "RJ-49" FWB1
    Text: C M O S -8 L 3 -V O L T , 0 .5 0 -M IC R O N C M O S G A TE A R R A YS NEC Electronics Inc. P r e lim in a r y Description February 1993 Figure 1. Various CMOS-8L Packages NEC’s 3-volt CMOS- 8 L family consists of ultra-high per­ fo rm a n c e , s u b -m ic ro n g a te a rra y s , ta rg e te d fo r


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    PDF aPD658xx diode ru4d ru4f bvde RJ4B 364-pin ITT 2222 A rj8b diode ru4d compatible "RJ-49" FWB1

    D65842

    Abstract: diode ru4d 136-Pin CMOS7 BV09 180 nm CMOS standard cell library Synopsys
    Text: SEC CMOS-8L 3-VOLT, 0.50-M ICRON CMOS GATE ARRAYS NEC Electronics Inc. Prelim inary Description O cto b er 1992 Figure 1. Various CMOS-8L Packages NEC’s 3-volt CMOS-8L family are ultra-high perform­ ance, sub-micron gate arrays, targeted for applications


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    PDF jPD65800 D65842 diode ru4d 136-Pin CMOS7 BV09 180 nm CMOS standard cell library Synopsys

    transistor f422 equivalent

    Abstract: transistor f422 F913 F422 transistor H49-M97 y205 TBB 469 F521-F523 0256C g0641
    Text: NEC CB-C9 Family Design Manual June 1996 Document No. A10927EU1V0UM00 Copyright 1996 NEC Electronics Inc. All Rights Reserved b 4 Ë 75 E 5 0063Û Û1 7 b l NEC CB-C9 Family Design Manual Document Number A10927EU1V0UM00 Revision History Preliminary Release On-Line - June 1996


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    PDF A10927EU1V0UM00 A11040XEU1V0UM00 b427525 G064122 transistor f422 equivalent transistor f422 F913 F422 transistor H49-M97 y205 TBB 469 F521-F523 0256C g0641

    Untitled

    Abstract: No abstract text available
    Text: IRLS540A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ ■ bvdss = 100 V Logic Level Gate Drive Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 HA Max. @ V DS=100V


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    PDF IRLS540A 046i2 O-220F 200nF> 71b4142 D312S4