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Texas Instruments SN6501DBVR Power Management Specialized - PMIC Transformer Driver for Iso Power Supply
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	SN6501DBVR		28,713			1 $2.02 10 $1.72 100 $1.46 1000 $0.993 10000 $0.889	Buy Now
Texas Instruments SN6501QDBVRQ1 Power Management Specialized - PMIC Auto Transformer Dvr
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	SN6501QDBVRQ1		16,866			1 $2.1 10 $1.89 100 $1.52 1000 $1.13 10000 $0.924	Buy Now
Texas Instruments SN6501DBVT Power Management Specialized - PMIC Transformer Driver for Iso Power Supply
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	SN6501DBVT		9,818			1 $2.6 10 $2.2 100 $1.88 1000 $1.27 10000 $1.14	Buy Now
Texas Instruments TLV3501AIDBVR Analog Comparators 4.5ns Rail-to-Rail High Speed
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	TLV3501AIDBVR		6,095			1 $3.26 10 $2.76 100 $2.32 1000 $1.73 10000 $1.63	Buy Now
Texas Instruments TLV3501AIDBVT Analog Comparators 4.5ns Rail-to-Rail High Speed
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	TLV3501AIDBVT		5,290			1 $3.89 10 $3.5 100 $2.86 1000 $2.05 10000 $1.95	Buy Now

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BV 1 501 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
WSD501H Abstract: BV45 Text: WSD501H * “G” Lead Pb -Free 1 2 SOD-323 WEITRON http://www.weitron.com.tw WSD501H MAXIMUM RATING Characteristics Symbol WSD 501H Unit Breakdown Voltage BV 45 Volts Continuous Reverse Voltage VR 40 Volts Average Rectified Forward Current IO 100 mAmps Peak Forward Surge Current	Original	PDF	WSD501H OD-323 100mA WSD501H BV45
BV 1 501 Abstract: SNK500-2x12-3 kaschke 096.906 BV 501 kaschke SP-E 16 75KV K2006 Kaschke sp-e 13 4 Text: Technical Data Sheet Part designation: Customer part no.: Kaschke Göttingen SP-E 13/6 SNK500-2x12-3 d:/bv/zn1864.dwg Customer: EI 3,81 a. 4 5 Uout 12V 7 6 Uout 12V 8 Uin 1 Remarks : AII 8 1 0,6 11,43±0,3 AI AIII EII EIII 10,16±0,3 max.15,1 max.17,5 max.14,3	Original	PDF	SNK500-2x12-3 /bv/zn1864 E13/6 K2006 44kHz 50Hz/2s) BV 1 501 SNK500-2x12-3 kaschke 096.906 BV 501 kaschke SP-E 16 75KV Kaschke sp-e 13 4
IRF 504 Abstract: EB 203 D DALE PT 30-2 VISHAY MARKING 2U eb 102 vishay EB eb 203 EB 202 D EB marking code marking code EB 38 Text: IHA Vishay Dale Filter Inductors High Current FEATURES • • • • STANDARD ELECTRICAL SPECIFICATIONS MODEL IHA-101 IHA-102 IHA-103 IHA-104 IHA-105 IHA-201 IHA-202 IHA-203 IHA-204 IHA-205 IHA-301 IHA-302 IHA-303 IHA-304 IHA-305 IHA-501 IHA-502 IHA-503	Original	PDF	MIL-I-23053/5, IHA-101 IHA-102 IHA-103 IHA-104 IHA-105 IHA-201 IHA-202 IHA-203 IHA-204 IRF 504 EB 203 D DALE PT 30-2 VISHAY MARKING 2U eb 102 vishay EB eb 203 EB 202 D EB marking code marking code EB 38
nec 2401 Abstract: DE150-501N04A 200W MOSFET POWER AMP DE-150-501N04 rf power mosfet 50MEG kp60 Text: DE150-501N04A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V VGS Continuous ±20 V VGSM Transient	Original	PDF	DE150-501N04A nec 2401 DE150-501N04A 200W MOSFET POWER AMP DE-150-501N04 rf power mosfet 50MEG kp60
400P Abstract: DE475-501N44A Directed Energy Text: Directed Energy, Inc. An ♦ ♦ ♦ ♦ ♦ DE475-501N44A IXYS Company RF Power MOSFET Preliminary Data Sheet N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching 30MHz Maximum Frequency Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C	Original	PDF	DE475-501N44A 30MHz 400P DE475-501N44A Directed Energy
nec 2401 Abstract: 501N04 QGS 80W 30 ohm mosfet High-Speed Switching 100mhz bd9883 DE150-501N04A Directed Energy Directed RF POWER MOSFET DE-150-501N04 Text: Directed Energy, Inc. An DE150-501N04A IXYS Company RF Power MOSFET Preliminary Data Sheet N-Channel Enhancement Mode Avalanche Rated Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR	Original	PDF	DE150-501N04A nec 2401 501N04 QGS 80W 30 ohm mosfet High-Speed Switching 100mhz bd9883 DE150-501N04A Directed Energy Directed RF POWER MOSFET DE-150-501N04
DE375-501N21A Abstract: "RF MOSFETs" 400P Text: DE375-501N21A RF Power MOSFET ♦ ♦ ♦ ♦ ♦ N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching 50MHz Maximum Frequency Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ	Original	PDF	DE375-501N21A 50MHz DE375-501N21A "RF MOSFETs" 400P
DE475-501N44A Abstract: 400P PIN diode SPICE model Text: DE475-501N44A RF Power MOSFET ♦ ♦ ♦ ♦ ♦ N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching 30MHz Maximum Frequency Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ	Original	PDF	DE475-501N44A 30MHz DE475-501N44A 400P PIN diode SPICE model
DE275-501N16A Abstract: 92-0002 DE275-501N16 Text: Directed Energy, Inc. An DE275-501N16A IXYS Company RF Power MOSFET Preliminary Data Sheet N-Channel Enhancement Mode Avalanche Rated Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ	Original	PDF	DE275-501N16A DE275-501N16A 92-0002 DE275-501N16
400P Abstract: DE375-501N21A mosfet SPICE MODEL Text: Directed Energy, Inc. An ♦ ♦ ♦ ♦ ♦ DE375-501N21A IXYS Company RF Power MOSFET Preliminary Data Sheet N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching 50MHz Maximum Frequency Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C	Original	PDF	DE375-501N21A 50MHz 400P DE375-501N21A mosfet SPICE MODEL
DE275-501N16A Abstract: KP58 Text: DE275-501N16A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V VGS Continuous ±20 V VGSM Transient	Original	PDF	DE275-501N16A DE275-501N16A KP58
DE275X2-501N16A Abstract: No abstract text available Text: Directed Energy, Inc. IXYS Company An ♦ ♦ ♦ ♦ ♦ DE275X2-501N16A RF Power MOSFET Preliminary Data Sheet Common Source Push-Pull Pair N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching The DE275X2-501N16A is a matched pair of RF power MOSFET devices in	Original	PDF	DE275X2-501N16A DE275X2-501N16A
200W MOSFET POWER AMP Abstract: DE150-501N04A rf power mosfet 900 v 9 amp mosfet PIN diode SPICE model Text: DE150-501N04A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V VGS Continuous ±20 V VGSM Transient	Original	PDF	DE150-501N04A 501N04A 200W MOSFET POWER AMP DE150-501N04A rf power mosfet 900 v 9 amp mosfet PIN diode SPICE model
Untitled Abstract: No abstract text available Text: DE275X2-501N16A RF Power MOSFET ♦ ♦ ♦ ♦ ♦ Common Source Push-Pull Pair N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching The DE275X2-501N16A is a matched pair of RF power MOSFET devices in a common source configuration. The device is optimized for push-pull or parallel operation in RF generators and amplifiers at frequencies to >65 MHz.	Original	PDF	DE275X2-501N16A DE275X2-501N16A

DE375-501N21A Abstract: 400P PIN diode SPICE model Text: DE375-501N21A RF Power MOSFET ♦ ♦ ♦ ♦ ♦ N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching 50MHz Maximum Frequency Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ	Original	PDF	DE375-501N21A 50MHz DE375-501N21A 400P PIN diode SPICE model
DE275-501N16A Abstract: 501N16A gsm Handset Circuit Diagram PIN diode SPICE model Text: DE275-501N16A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Ideal for Class C, D, & E Applications Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500	Original	PDF	DE275-501N16A DE275-501N16A 501N16A gsm Handset Circuit Diagram PIN diode SPICE model
DE475-501N44A Abstract: 10-15V 400P PIN diode SPICE model Text: DE475-501N44A RF Power MOSFET ♦ ♦ ♦ ♦ ♦ N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching 30MHz Maximum Frequency Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ	Original	PDF	DE475-501N44A 30MHz DE475-501N44A 10-15V 400P PIN diode SPICE model
Untitled Abstract: No abstract text available Text: ePurge X Solid State Purge Controller Applied Analytics Data Sheet No. DS-501A — Revised 19 June 2013 An ultra-slim, next generation purging & pressurization device. In order to prevent fire or explosion, instrument enclosures are often “purged” of flammable gas. Before cycling power to the	Original	PDF	DS-501A DS-501A:
Untitled Abstract: No abstract text available Text: WSD501H WEITRON http://www.weitron.com.tw WSD501H MAXIMUM RATING Characteristics Symbol WSD 501H Unit Breakdown Voltage BV 45 Volts Continuous Reverse Voltage VR 40 Volts Average Rectified Forward Current IO 100 mAmps Peak Forward Surge Current 8.3ms1/2 Sine Wave	Original	PDF	WSD501H 100mA
0E12 Abstract: MOSFET Termination Structure Text: Low Voltage Super Junction MOSFET Simulation and Experimentation Timothy Henson, Joe Cao International Rectifier 233 Kansas St, El Segundo, CA 90245 USA as presented at ISPSD Conference , April 2003 Abstract. The application of Super Junction concepts to a low voltage power MOSFET is	Original	PDF
Untitled Abstract: No abstract text available Text: MIL-C-5015 Connectors MS-E/F/R/ER Contact Arrangements Face View Pin Insert LEGEND Resilient only Resilient & Plastic ¢ High Volume Layouts - readily available from Cannon Distributors ¢ ¢ ¢ ¢ B A B A D C B Shell Size No. of Contacts Service Rating	Original	PDF	MIL-C-5015 14S-9 12SA10 12S-3 12S-4 10SLA4 10SL-3 10SL-4 10S-2 14S-1
in4606 Abstract: IN4150 1N4606 1N4150 1N4450 1N4607 1N460B D035 DT230C DT230H Text: SIGNAL DIODES 100 - 200 M A TYPES 200 - 400 M A TYPES @ Part Number Ir BV 1OOü A Min. V 1N4451 40 1N4607 85 Vf @ 25°C Max. <nA) 1 Max. @ V r (V) (V) @ Ir(mA) Co @ OV (pf) trr Package T»pe (nsec) 50 30 1.00 300 6 10 100 50 1.00 400 4 10 1 Package Outline No.	OCR Scan	PDF	100/iA 1N4150* 1N4450 1N4606 100/tA 1N445I 1N4607 1N460B DT230C DT230H in4606 IN4150 1N4150 D035
CB345 Abstract: MU Thomson-CSF diode CY501H 1N5181 CB-323 Thomson-CSF diodes de redressement Diodes de redressement Text: high voltage rectifier diodes diodes de redressem ent h au te tension Types 100 m A •o Vrrm ■f s m 10 ms mA (V) (A) vF max (VI / if THOMSON-CSF ■r /V r r m V(BR)R max (mA) (^à) min (V) 100 100 10 60000 100000 Case / Tgm i) = 25°C Tj = 125°C CY 501 H	OCR Scan	PDF	CY751 CB-329) CB-323- CB326\| CB-3311 CB343--CB345) CB345 MU Thomson-CSF diode CY501H 1N5181 CB-323 Thomson-CSF diodes de redressement Diodes de redressement
CSR 8811 Abstract: HM511001AP6 HM511001 HM511001ajp Text: H M 5 1 1 0 0 1 A S e r ie s 1,048,576-Word x 1-Bit CMOS Dynamic RAMI • DESCRIPTION H M 511001A P Series The Hitachi HM511001A series is a CMOS dynamic RAM organized 1,048,576word x 1-bit. HM511001A has realized higher density, higher performance and vari	OCR Scan	PDF	HM511001A 576-Word 18-pin 20-pin CSR 8811 HM511001AP6 HM511001 HM511001ajp

BV 1 501 Search Results

BV 1 501 Price and Stock

Texas Instruments SN6501DBVR

Texas Instruments SN6501QDBVRQ1

Texas Instruments SN6501DBVT

Texas Instruments TLV3501AIDBVR

Texas Instruments TLV3501AIDBVT

BV 1 501 Datasheets Context Search

WSD501H

BV 1 501

IRF 504

nec 2401

400P

nec 2401

DE375-501N21A

DE475-501N44A

DE275-501N16A

400P

DE275-501N16A

DE275X2-501N16A

200W MOSFET POWER AMP

Untitled

DE375-501N21A

DE275-501N16A

DE475-501N44A

Untitled

Untitled

0E12

Untitled

in4606

CB345

CSR 8811