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    BUT22B Search Results

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    BUT22B Price and Stock

    Philips Semiconductors BUT22B

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics BUT22B 695 2
    • 1 -
    • 10 $2.184
    • 100 $1.5681
    • 1000 $1.3776
    • 10000 $1.3776
    		Buy Now
    Quest Components BUT22B 556
    • 1 $4.5
    • 10 $4.5
    • 100 $2.1
    • 1000 $1.95
    • 10000 $1.95
    		Buy Now

    BUT22B Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Type PDF
    BUT22B Unknown Semiconductor Master Cross Reference Guide Scan PDF
    BUT22B Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BUT22B Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    BUT22B Philips Semiconductors Silicon Diffused Power Transistors Scan PDF
    BUT22B Philips Semiconductors High Speed, High Voltage Transistors Scan PDF
    BUT22BF Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BUT22BF Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    BUT22BF Philips Semiconductors Silicon Diffused Power Transistors Scan PDF

    BUT22B Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BUT22C

    Abstract: BUT22B BUT22
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors BUT22B/C DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 400V(Min)- BUT22B 450V(Min)- BUT22C ·High Switching Speed APPLICATIONS ·Designed for use in converters, inverters, switching


    Original     		PDF BUT22B/C BUT22B BUT22C BUT22C BUT22B BUT22

    BUT22

    Abstract: NPN Transistor 1.0A 400V BUT22BF BUT22CF
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors BUT22BF/CF DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 400V(Min)- BUT22BF 450V(Min)- BUT22CF ·High Switching Speed APPLICATIONS ·Designed for use in converters, inverters, switching


    Original     		PDF BUT22BF/CF BUT22BF BUT22CF BUT22 NPN Transistor 1.0A 400V BUT22BF BUT22CF

    Untitled

    Abstract: No abstract text available
    Text: bb53T31 0013551 7 • E5E I> N AMER P H I L I P S / D I S C R E T E BUT22B BUT22C _ :_ _ J v _ T - 3 3 - 1 3 SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistors in a TO-220 envelope intended fo r use


    OCR Scan     		PDF bb53T31 BUT22B BUT22C O-220 T-33-13

    Untitled

    Abstract: No abstract text available
    Text: t 353*131 □ a ifla s i 1 • DEVELOPMENT DATA BUT22BF BUT22CF This data sheet contains advance information and specifications are subject to change without notice* N AMER PHILIPS/DISCRETE 35E D SILICON DIFFUSED POWER TRANSISTORS T - 33-0? High-voltage, high-speed, glass-passivated npn power transistor in a SOT186 envelope intended for use


    OCR Scan     		PDF BUT22BF BUT22CF OT186 bb53T31 T-33-09

    philips 22c

    Abstract: but22 BUT22B BUT22C IEC134
    Text: ESE I> N AMER PHILIPS/DISCRETE • ^ 5 3 ^ 3 1 0018051 7 ■ ” BUT22B BUT22C T - 3 3 - 1 3 SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistors in a TO-220 envelope intended for use in converters, inverters, switching regulators, motor controHystems, etc.


    OCR Scan     		PDF BUT22B BUT22C T-33-13 O-220 BUT22B O-220AB. base35 7Z8T01S philips 22c but22 BUT22C IEC134

    BUT22BF

    Abstract: BUT22CF but22c BUT22
    Text: i r b 353*131 □Glfl05'i DEVELOPMENT DATA . This data sheet contains advance Info rm a tio n and BUT22BF BUT22CF 11 specifications are subject to change w ith o u t notice* N AMER P HILIPS/DISCRETE 2SE D SILICON DIFFUSED POWER TRANSISTORS T - 3 3 -£ > ?


    OCR Scan     		PDF BUT22BF BUT22CF OT186 BUT22BF 7Z81754 bbS-3131 T-33-09 BUT22CF but22c BUT22

    philips 22c

    Abstract: BUT22B BUT22C IEC134 BUT22
    Text: ESE D N AMER PH ILI P S / D I S CR E T E • bb53T31 QQlññ51 7 ■ BUT22B BUT22C T - 3 3 - I S SILICON DIFFUSED POW ER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistors in a T0-220 envelope intended for use in converters, inverters, switching regulators, motor controHystems, etc.


    OCR Scan     		PDF BUT22B BUT22C T-33-13 T0-220 O-220AB. bbSn31 7Z81Q16 philips 22c BUT22C IEC134 BUT22

    transistor f6 13003

    Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
    Text: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.


    OCR Scan     		PDF SC08b transistor f6 13003 equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350

    buw13a philips semiconductor

    Abstract: 180NS mje13008 BUS12 BUS12A BUT12 BUT12A BUT18 BUS13 BUT18AF
    Text: N AUER PHILIPS/DISCRETEL ESE D • bbS HÌBl 001b521 Ö ■ Power Devices HIGH SPEED, HIGH VOLTAGE TRANSISTORS cont. V CE(*at) MAX. at lc/lB tftyp at lc (Inductive load) 400V 450V 1.5V at 4A/0.8A 180ns at 4A 850V 1000V 400V 450V 1.5V at 4A/0.8A 180ns at 4A


    OCR Scan     		PDF S3T31 BUT18 O-220AB 180ns BUT18A BUT18F OT-186 BUT18AF BUT12 buw13a philips semiconductor mje13008 BUS12 BUS12A BUT12A BUS13 BUT18AF

    Untitled

    Abstract: No abstract text available
    Text: N AUER PHILIPS/DISCRETE, BSE D • QOlbEEl fl ■ T~3 I Power Devices HIGH SPEED, HIGH VOLTAGE TRANSISTORS cont. V CE(*at) MAX. at lc/lB tftyp at lc (Inductive load) 400V 450V 1,5V at 4A /0.8A 180ns at 4A 850V 1000V 400V 450V 1.5V at 4 A /0.8A 180ns at 4A


    OCR Scan     		PDF 180ns OT-93 400ns BUV298AV BUV298V OT-227B1 -220AB BUT18F

    BGY41

    Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
    Text: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.


    OCR Scan     		PDF LCD01 BGY41 BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc

    buw13a philips semiconductor

    Abstract: BUT22A BUT228 BUP23A SOT93 BUT18 PHILIPS SEMICONDUCTOR mje13008 SOT-93 bus13 philips transistor VCE 1000V
    Text: BSE J> N AUER PHILIPS/DISCRETE • bbS3T31 001bE21 Ö ■ Power Devices HIGH SPEED, HIGH VOLTAGE TRANSISTORS cont. TYPE NO. PACKAGE OUTLINE •cfDOt1) 6A v CE(*at) MAX. at lc/lB t ft y p a tlc (Inductive load) 400V 450V 1.5V at 4A/0.8A 180ns at 4A 850V 1000V


    OCR Scan     		PDF bki53T31 BUT18 BUT18A O-220AB 180ns BUT18F BUT18AF OT-186 BUT12 buw13a philips semiconductor BUT22A BUT228 BUP23A SOT93 BUT18 PHILIPS SEMICONDUCTOR mje13008 SOT-93 bus13 philips transistor VCE 1000V

    FET BFW10

    Abstract: KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11
    Text: INDEX _ INDEX OF TYPE NUM BERS The inclusion of a type number in this publication does not necessarily imply its availability. Type no. book section Type no. book section Type no. book section BA220 BA221 BA223 BA281 BA314 SCOI SCOI SCOI SCOI


    OCR Scan     		PDF BA220 BA221 BA223 BA281 BA314 BA315 BA316 BA317 BA318 BA423 FET BFW10 KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11

    ksd 302 250v, 10a

    Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
    Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle


    OCR Scan     		PDF CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643