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    BUP40 Price and Stock

    Siemens BUP401

    29 A, 600 V, N-CHANNEL IGBT, TO-220
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components BUP401 489
    • 1 $6
    • 10 $6
    • 100 $2.6
    • 1000 $2.4
    • 10000 $2.4
    		Buy Now

    Siemens BUP402

    36 A, 600 V, N-CHANNEL IGBT, TO-220
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components BUP402 145
    • 1 $6
    • 10 $3
    • 100 $2.6
    • 1000 $2.6
    • 10000 $2.6
    		Buy Now

    Siemens BUP403

    42 A, 600 V, N-CHANNEL IGBT, TO-220
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components BUP403 28
    • 1 $6
    • 10 $3
    • 100 $3
    • 1000 $3
    • 10000 $3
    		Buy Now

    Siemens BUP400

    IGBT TO-220 Insulated Gate Bipolar Transistor, 22A I(C), 600V V(BR)CES, N-Channel, TO-220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA BUP400 5,000
    • 1 -
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    BUP40 Datasheets (11)

    Part ECAD Model Manufacturer Description Curated Type PDF
    BUP40 Semelab Silicon PNP Epitaxial Planar Transistors Scan PDF
    BUP400 Infineon Technologies IGBT Original PDF
    BUP400D Infineon Technologies IGBT With Antiparallel Diode Original PDF
    BUP400-D Infineon Technologies IGBT Duopack (IGBT with Antiparallel ... Original PDF
    BUP400D Siemens Original PDF
    BUP400D Siemens TRANSISTOR - IGBT Original PDF
    BUP401 Infineon Technologies IGBT Original PDF
    BUP402 Infineon Technologies IGBT Original PDF
    BUP403 Infineon Technologies IGBT Original PDF
    BUP406 Unitra Cemi Transistor Scan PDF
    BUP407 Unitra Cemi Transistor Scan PDF

    BUP40 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BUP314

    Abstract: BUP307 igbt types siemens bup314 BUP401 BUZ334 BUZ MOSFET MOSFET welding INVERTER 334 mosfet flyback inverter welding
    Text: APPLICATIONS POWER SEMICONDUCTORS Andreas Bachofner ● Michael Herfurth ● Michael Schmitt High-speed IGBTs: Fast switching at an attractive price Developed from secondgeneration IGBTs, highspeed IGBTs insulated gate bipolar transistors are particularly economical for


    Original     		PDF O-220 O-218 BUP314 BUP307 igbt types siemens bup314 BUP401 BUZ334 BUZ MOSFET MOSFET welding INVERTER 334 mosfet flyback inverter welding

    BUP400D

    Abstract: SGP10N60 bup400
    Text: SGP10N60 Preliminary data IGBT • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated Pin 1 Pin 2 G Pin 3 C E Type VCE IC Package Ordering Code SGP10N60 600V 10A TO-220 AB Q67040-A . . . . Maximum Ratings


    Original     		PDF SGP10N60 O-220 Q67040-A BUP400D Apr-08-1998 BUP400D SGP10N60 bup400

    SKiip 83 EC 125 T1

    Abstract: SKiiP 82 AC 12 T1 SKiiP 81 AN 15 T1 semikron SKHI 22 SPICE MODEL semikron skiip 32 nab 12 T7 SKiip 83 EC 12 1 T1 SKiiP 24 NAB 063 T12 skiip 83 ac 128 BUZ78 equivalent SKIIP 81 AC 12 I T1
    Text: 0 Betriebsweise von Leistungshalbleitern Betriebsweise von Leistungshalbleitern 0.1 Elementare Schaltvorgänge Leistungshalbleiter arbeiten bis auf wenige Sonderanwendungen im Schalterbetrieb. Daraus resultieren grundlegende Prinzipien und Funktionsweisen, die in allen leistungselektronischen


    Original     		PDF

    irfb4115

    Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
    Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		PDF element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor

    SSP35n03

    Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
    Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A


    Original     		PDF 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent

    2kW flyback PFC

    Abstract: transistor SMD DK -RN SMPS flyback 2kW UPS SIEMENS UMAX 450W SMPS smps 450W 2kw mosfet PFC 5kw P-CHANNEL 25A TO-247 POWER MOSFET siemens soft starter
    Text: Semiconductor Group – find us at an office near you AUS Siemens Ltd., Head Office 544 Church Street Richmond Melbourne , Vic. 3121 ట (+61) 3-9420 7111 Fax (+61) 3-9420 72 75 Email: mark.walsh@siemens.com.au D Siemens AG Von-der-Tann-Straße 30 D-90439 Nürnberg


    Original     		PDF D-90439 D-70499 D-81679 B-1060 N60S5 O-220 OT-223 2kW flyback PFC transistor SMD DK -RN SMPS flyback 2kW UPS SIEMENS UMAX 450W SMPS smps 450W 2kw mosfet PFC 5kw P-CHANNEL 25A TO-247 POWER MOSFET siemens soft starter

    ISPSD coolmos

    Abstract: bup400d mosfet nepi
    Text: Properties of the New Compensation Devices CoolMOS between 420K and 80K— the Ideal Device for Cryogenic Applications* A.E. Schlögl a), G. Deboy b), H.W. Lorenzen c), U. Linnert a), H.-J. Schulze a) and J.P. Stengl b) a) SIEMENS AG, Corporate Technology, Research Center Power Electronics, Otto-Hahn-Ring 6, 81730 Munich, Germany


    Original     		PDF 80K-- C3-219-24, ISPSD coolmos bup400d mosfet nepi

    SGH80N60RUFD

    Abstract: bup314 equivalent bup314d SGH30N60UFD SGU06N60 BUP314 motorola diode cross reference mgy20n120d IXDH30N120AU1 SGP15N120
    Text: Infineon Technologies Cross Reference List Fast IGBT & DuoPack Company Product Name Fairchild * Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*)


    Original     		PDF SGR2N60UFD SGP10N60RUF SGP10N60RUFD SGH10N60RUFD SGW10N60RUFD SGP06N60 SKB10N60 BUP400D SGB15N60 SGH80N60RUFD bup314 equivalent bup314d SGH30N60UFD SGU06N60 BUP314 motorola diode cross reference mgy20n120d IXDH30N120AU1 SGP15N120

    bup400d

    Abstract: Q67041-A4710-A2 bup400 IC Packages SGP10N60 siemens igbt SGB10N60 SGW10N60 Q67040S4234 BUP400D SMD
    Text: Preliminary data SGP10N60, SGB10N60, SGW10N60 Fast S-IGBT in NPT-Technology • 75 % lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time 10 µs • Designed for moderate and high frequency applications:


    Original     		PDF SGP10N60, SGB10N60, SGW10N60 SGP10N60 O-220AB Q67041-A4710-A2 SGB10N60 O-263AB Q67041-A4710-A4 bup400d Q67041-A4710-A2 bup400 IC Packages SGP10N60 siemens igbt SGB10N60 SGW10N60 Q67040S4234 BUP400D SMD

    BUP40

    Abstract: BUP41 LE17
    Text: SEMELAB 3?E LTD D 6133107 D0G014Ô SEMELAB JUN 2 6 1987 BUP40 EW PRODUCT 'U S I L I C O N PNP MECHANICAL DATA EPITAXIAL PLANAR 2.8 .7 .8 . m ax. 3-2l 3.0 j 3.75 -¿ J t 11.1 m ax. FEATURES • Very low V ce sat TUU T ÜÜÜ , 1.2 • High gain at high current


    OCR Scan     		PDF i33ia? BUP40 BUP41 O-126 LE17

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BUP400D IGBT W ith Antiparallel Diode Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Including fast free-wheel diode Pin 1 Pin 2 G Type BUP 400D VCE 600V 22A Pin 3 C E Package Ordering Code


    OCR Scan     		PDF BUP400D O-220 Q67040-A4423-A2

    BUP40

    Abstract: bup401 LE17 BUP41
    Text: 5EMELAB NEW PRODUCT BUP40 SILICON PIMP EPITAXIAL PLANAR MECHANICAL DATA D im e n s io n s in m m FEATURES 2.8 max • VERY LOW VcE sat 3.75 • HIGH GAIN AT HIGH CURRENT • VERY FAST SWITCHING • NPN COMPLEMENT BUP 41 c ;b 'L 58k- 0.5 0.88 2.29 max TO 126


    OCR Scan     		PDF BUP40 BUP40 bup401 LE17 BUP41

    Magnatec

    Abstract: BUP41 fast switching pnp transistor 3A 60V "NPN Transistor" BUP40 LE17 npn transistor
    Text: SILICON EPITAXIAL PLANAR NPN TRANSISTOR Tfelectronics MAGNATEC ¡^ ] BUP41 • PNP C om plim ent BUP40 • High Gain at High Current • Very fast Switching ABSOLUTE M A X IM U M RATINGS T a = 2 5 °C unless otherwise stated v CBO Collector - Base Voltage


    OCR Scan     		PDF BUP41 BUP40 O-126 Magnatec BUP41 fast switching pnp transistor 3A 60V "NPN Transistor" BUP40 LE17 npn transistor

    BUP402

    Abstract: No abstract text available
    Text: SIEMENS BUP 402 IGBT Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated Pin 1 Pin 2 G Type BUP 402 VCE 600V h 36A C Pin 3 E Package Ordering Code TO-220 AB C67078-A4405-A2 Maximum Ratings


    OCR Scan     		PDF O-220 C67078-A4405-A2 BUP402

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BUP 401 IGBT Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated Pin 1 Pin 2 G Type BUP 401 VCE 600V >c 29A C Pin 3 E Package Ordering Code TO-220 AB C67078-A4404-A2 Maximum Ratings


    OCR Scan     		PDF O-220 C67078-A4404-A2 6235bQ5 006511b GPT05 fi235b05

    BU409D

    Abstract: BU930P BU606 SOT93 BU526 BU500 BU932 bu626a BU912 BU426
    Text: Type No. Reliability Option Polarity Package v C EO •c cont hF E @ Vce /'C «T PD 10M 10M 10M 6M 6M 60 60 60 70 70 6M 70 75 125 125 120 BU408D BU409 BU409D BU426 BU426A NPN NPN NPN NPN NPN T0220 T0220 T0220 SOT 93 SOT93 200 150 150 375 400 7 7 7 6 6 5min


    OCR Scan     		PDF BU408D T0220 BU409 BU409D BU426 BU426A BU433 BU500 BU409D BU930P BU606 SOT93 BU526 BU500 BU932 bu626a BU912 BU426

    BU930

    Abstract: SOT93 BU409 BU500 BU606 BU930P T0220 BU4090 BU800 BU912
    Text: Type No. Ó“ ' «•*» Package v CEO ■c PD hFE« V ce /'C 7 7 7 5/1 5/1 5/1 5/0.6 5/0.6 10M 10M 10M 6M 6M 60 60 60 70 70 6M 70 75 125 125 cont BU408D BU409 BU409D BU426 BU426A NPN NPN NPN NPN NPN T0220 T0220 T0220 SOT 9 3 SOT93 200 375 400 6 6 5min 5min


    OCR Scan     		PDF

    ba606

    Abstract: BU500
    Text: S E N E LA B LTD 37E D fll331fl7 D D Ü 0 0 S 4 3 • S f l L B «'¡I { t ¿S ÍÉ £ á U & 3 ft fc a n ¿^ ¡£ U 3 t t H fií¿á Type No. Option"*^ Polarlty Paoka9e V CEO ¡ £ nt cont hF E @ VCE/>C Pd BU408D BU409 BU409D BU426 BU426A NPN NPN NPN NPN


    OCR Scan     		PDF fll331fl7 BU408D BU409 BU409D BU426 BU426A T0220 BU433 ba606 BU500

    BUP41

    Abstract: BUP40 LE17
    Text: SEMELAB LTD 37E 0133107 D 000D1SD SEM ELAB JUN 2 6 195/ BUP41 NEW PRODUCT S ILIC O N NPN MECHANICAL DATA EPITAXIAL PLANAR 2.8 It.I max. o 7 .8 . max. 3.2, 31 3.75 FEATURES nnn • Very low V ce sat 1.2 • High gain at high current T 2 .5 4 max. 15.3 min.


    OCR Scan     		PDF D00D1SD BUP41 BUP40 O-126 LE17

    10A600V

    Abstract: 1XGH20N60AU1 IGBT cross reference HGTP20N6QB3 IXSH20N60AU1 20a600v 12A600V CT60AM-20 5N60RUFD 5A1200V
    Text: SAMSUNG IGBT TOSHIBA MOTOLORA HARRIS SIEM ENS IXYS HUfU3NÖ0B3S hü'mSNtäoöä U ltiJ 102 H U IU /N Ö Ü B 3 HGIP12NB0B3 IXGP10N60A U 115J101 IXGH10N60A HGTP20N6QB3 GT25JT01 HGlu2UfJt>063 IXGH20N6QA IXGH24N6QA HU Î J4UNöUt33 IXGH40N60A IXGH50N6ÛA, HU I P^NbUBaU


    OCR Scan     		PDF HGIP12NB0B3 115J101 IXGP10N60A IXGH10N60A HGTP20N6QB3 GT25JT01 IXGH20N6QA IXGH24N6QA IXGH40N60A IXGH50N6 10A600V 1XGH20N60AU1 IGBT cross reference IXSH20N60AU1 20a600v 12A600V CT60AM-20 5N60RUFD 5A1200V

    LE17

    Abstract: bup41
    Text: SEMELAB B U P40 O4 1 S O A -I -7 C o U « lo r T o E rrv.li«« V o lt » « « . V « - V 1,-le -3 -5 - 7 -1 0 -J -J -5 - 7 -1 0 0 C o lu t ili# lo B a u Vo*N>u« V c - V t 1— I-1 \ N v\ \ % % \ IV« / in -«0 -««I Coliocso» C v n a n t . le - A S E M E L A B L T D . , C O V c N T R Y RO AO . LU T 7 E n v Y 0 R TM . IE IC S LE1 7 <U8


    OCR Scan     		PDF