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    BUK436-50A

    Abstract: BUK436-50B SOT93 package
    Text: N AMER P H I L I P S / D I S C R E T E HSE D Hi bfci53ci31 0 0 2 0 2 0 5 T Hi PowerMOS transistor BUK436-50A BUK436-50B T -3 « M GENERAL DESCRIPTION N-channel enhancem ent mode field-effect power transistor in a plastic envelope. The device is intended to r use in


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    PDF Q0202BS BUK436-50A BUK436-50B BUK436 OT-93; T-39-T3 SOT93 package

    common emitter amplifier

    Abstract: LKE27010R amplifier marking code D
    Text: 1 I N AMER PHILIPS/DISCRETE OhE D • bfci53ci31 DD3,4T47 Ü ■ MAINTENANCE TYPE LKE27010R T-33-O ST M ICRO W AVE LINEAR PO W ER TRANSISTOR NPN transistor for use in a common-emitter class-A linear power amplifier up to 3,3 GHz. Diffused emitter ballasting resistors, interdigitated structure, multiceli geometry and gold metallization


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    PDF bfci53cà DD14TM7 LKE27010R T-33-OiT FO-53. LKE2701 T-33-05. to200 common emitter amplifier amplifier marking code D

    OM931

    Abstract: OM961 KL-139 philips om961
    Text: N AMER PHI LIPS/DISCRETE 2SE D B ^53=531 □ 0 2 0 1 3 ci T I OM931 OM961 T-W-oS'bl HYBRID INTEGRATED CIRCUIT HI-FI AUDIO POWER AMPLIFIERS The OM931 and OM961 are th in -film h y b rid integrated c irc u it h i-fi audio a m p lifie rs fo r sinusoidal o u tp u t pow er up to 60 W. The modules o ffe r m axim u m design possibilities regarding a m p lific a tio n ,


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    PDF OM931 OM961 OM961 hbS3T31 G0ED144 KL-139 philips om961