XC-01
Abstract: D70236 smd 3F9 uPD72291 JUPD70236 interfacing of 8251 devices with 8085 high level language programming of 8085 microprocessor 8085 mnemonic opcode ls-112 TFK U 111 B
Text: NEC Electronics Inc. Description The V53 is a high-speed, high-integration 16-bit CM O S m icroprocessor with a CPU that is object and source code com patible with the V20 /V30®. Integrated on the same die is a 4-channel D M A controller, a DART, three
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UPD70236
16-Bit
V53TM
mPD71087/8237
/iPD71071.
fiPD71051
jjPD70236
XC-01
D70236
smd 3F9
uPD72291
JUPD70236
interfacing of 8251 devices with 8085
high level language programming of 8085 microprocessor
8085 mnemonic opcode
ls-112
TFK U 111 B
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BU508A
Abstract: BU508D transistor d 1991 ar T1185 philips bu508a transistor Bu508A
Text: N AMER PHILIPS/DISCRETE blE D • bb£3^31 D02A2b4 DEI BU508A BU508D SILICON DIFFUSED POWER TRANSISTOR High-voltage, high-speed sw itching npn tran sisto r in S O T 93A envelope intended fo r use in h o rizontal d e flectio n c irc u its o f co lo u r television receivers. T he BU 508D has an integrated e fficien cy diode.
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D02A2b4
BU508A
BU508D
OT93A
BU508D
BU508D)
transistor d 1991 ar
T1185
philips bu508a
transistor Bu508A
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BUK441
Abstract: BUK441-100A BUK441-100B
Text: N AMER PHILIPS /D I SCRE TE b'JE I m ^53^31 003DS05 TOb • APX Philips Semiconductors Product Specification PowerMOS transistor G E N E R A L DESCRiPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in
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003DS05
BUK441-100A/B
PINNING-SOT186
BUK441
-100B
bb53R31
BUK441-100A
BUK441-100B
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transistor 5BM
Abstract: BUK443 BUK443-60A BUK443-60B
Text: N AMER PHIL IPS /DISCRETE bTE D m ^^ 53^31 0 D 3 D5 1 S ÔS 5 H A P X Philips Sem iconductors Product Specification PowerMCS transistor G E N E R A L DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic fuil-pack envelope. The device is Intended for use In
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0D3D51S
BUK443-60A/B
PINNING-SOT186
BUK443
transistor 5BM
BUK443-60A
BUK443-60B
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Untitled
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE bbS3T31 0 0 2 6 3 ^ 221 b'lE J> BUT11 BUT11A _ y v _ SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistors in a TO-220 envelope, intended for use in converters, inverters, switching regulators, m otor control systems etc.
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bbS3T31
BUT11
BUT11A
O-220
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TRANSISTOR b72
Abstract: BUK454-200A BUK454-200B T0220AB
Text: N AUER PHILIPS/DISCRETE b^E D m ^ 5 3 ^ 3 1 GDBDblS 73b • APX Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in
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BUK454-200A/B
T0220AB
BUK454
-200A
-200B
TRANSISTOR b72
BUK454-200A
BUK454-200B
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Untitled
Abstract: No abstract text available
Text: N AUER PHILIPS/D ISCR ETE b'tE D bbS3^31 QQ30bRQ 417 * A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a lastic envelope. he device is intended for use in
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QQ30bRQ
O220AB
BUK456-800A/B
BUK456
-800A
-800B
K456-800A
bbS3T31
0030b84
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bu2508df
Abstract: BU250BDF 2T3 transistor sot199
Text: N AUER PHI LIP S/DISCRETE bTE D • 1^53^31 D02Ö3S7 672 * A P X Product Specification Philips Semiconductors_ Silicon Diffused Power Transistor BU2508DF GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated
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BU2508DF
OT199;
bu2508df
BU250BDF
2T3 transistor
sot199
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BUW13F
Abstract: BUW13AF
Text: N AMER PHILIPS/DISCRETE bTE D • bbS3R31 0DEÖS55 öbl ■ APX BUW13F BUW13AF SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn pow er tran sisto r in a S O T 199 envelope intended fo r use in converters, inverters, sw itching regulators, m o to r co n tro l systems, etc.
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BUW13F
BUW13AF
OT199
BUW13F
BUW13AF
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BUK100-50GS
Abstract: T0220AB
Text: N AMER PHILIPS/DISCRETE bTE D • bbSa^l 0CI3D34b bb7 ■ APX Philips Sem iconductors Product Specification PowerMOS transistor TOPFET DESCRIPTION Monolithic temperature and overload protected power MOSFET in a 3 pin plastic envelope, intended as a general purpose switch for
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3D34b
BUK100-50GS
Iisl/Iisl25
BUK100-50GS
T0220AB
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transistor K 1413
Abstract: buw13a BUW13 discrete time control systems
Text: N AUER PHILIPS/DISCRETE II bbS3*î31 □□EÖS47 715 I IAPX BUW13 BUW13A b^E SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn pow er transistors in a SOT93 envelope, intended fo r use in converters, inverters, sw itching regulators, m o to r c o n tro l systems etc.
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BUW13
BUW13A
transistor K 1413
buw13a
discrete time control systems
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Untitled
Abstract: No abstract text available
Text: m b b S B ' m Q02M375 12=1 « A P X N AUER PHILIPS/DISCRETE BAV100 to 103 b?E ]> V J GENERAL PURPOSE DIODES FOR SURFACE MOUNTING Silicon planar epitaxial diodes; intended fo r switching and general purposes in industrial equipment e.g. oscilloscopes, digital voltmeters and video ou tp u t stages in colour television.
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Q02M375
BAV100
BAV101
B/W10
0DE43fl5
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Untitled
Abstract: No abstract text available
Text: bRE J> N AJ1ER PHILIPS/DISCRETE bbS3T31 DD3DS^S Dlfi * A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in
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bbS3T31
O220AB
BUK452-1OOA/B
BUK452
-100A
-100B
BUK452-100A/B
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BUV28A
Abstract: BUV28
Text: N AMER PHILIPS/DISCRETE b^E D • bbS3R31 DD2Û47D 117 I IAPX '' BUV28 BUV28A SILICON DIFFUSED POWER TRANSISTORS High-speed, glass-passivated npn transistors in a T 0 -2 2 0 envelope intended for fast switching applications such as high frequency and efficiency converters, switching regulators and motor controls.
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bbS3R31
BUV28
BUV28A
T0-220
O-220AB.
BUV28
QD26473
BUV28A
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k452
Abstract: BUK452-60A BUK452-60B T0220AB lo25 transistor k452
Text: N AMER PHILIPS/DISCRETE blE D • ^53^31 □□3GSTÜ Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies
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K452-60A/B
T0220AB
BUK452
-ID/100
k452
BUK452-60A
BUK452-60B
T0220AB
lo25
transistor k452
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BUK442-100A
Abstract: BUK442-100B
Text: N AMER PHILIPS/DISCRETE □TE D • bbS3T31 0D3G510 273 * A P X Product Specification P hilip s S e m icon ducto rs BU K442-1OOA/B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode f ield-effect power transistor in a plastic full-pack envelope.
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K442-1OOA/B
EUK442
-100A
OT186
BUK442-100A
BUK442-100B
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k4368
Abstract: BUK436-800A BUK436-800B K43680
Text: N AMFR PHILIPS/DISCRETE b TE J> • bbsa^ai 0Q3Ü47Ü BU K436-800A/B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended lor use in Switched Mode Power Supplies SMPS , motor control, welding,
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K436-800A/B
BUK436
-800A
-800B
k4368
BUK436-800A
BUK436-800B
K43680
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BU826A
Abstract: BU826 BD227 FL01 5A/M39029/BU826A
Text: N AMER PHILIPS/DISCRETE b TE D • bb53T31 0020314 4fl7 H A P X BU826 BU826A , SILICON DARLINGTON POWER TRANSISTOR M o n o lith ic high voltage npn D arlin g to n c irc u it w ith integrated speed-up diode in a plastic SOT93 envelope, intended fo r fast sw itching ap p lica tio n.
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bb53T31
BU826
BU826A
BU826
7Z88187
BU826A
BD227
FL01
5A/M39029/BU826A
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1ehj3
Abstract: BUK581-60A Transistor 8d4
Text: N AUER PHILIPS/DISCRETE bRE D • bb53S31 DDaDflaQ 604 * A P X Philips Semiconductors Product Specification PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level fieid-effect power transistor in a plastic envelope
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bbS3S31
BUK581-60A
OT223
3Gfl35
BUK581-60A
OT223.
1ehj3
Transistor 8d4
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2051B
Abstract: BUW11 SII-020 BUW11A IEC134
Text: N AMER PHILI P S / D I S C R E T E b'iE D • Jl bb53= 31 0020515 165 H A P X BUW11 BUW11A SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn po w er transistors in a S O T 9 3 envelope, intended fo r use in converters, inverters, switching regulators, m o to r co ntrol systems etc.
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BUW11
BUW11A
7Z82933
2051B
SII-020
BUW11A
IEC134
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BUK416-100AE
Abstract: YT150 30444 BUK416-100BE BUK416-1OOAE mkp-x
Text: N AMER P H I L I P S / D I S C R E T E L^E D • G03D440 DET HIAPX Product Specification Philips Semiconductors BU K416-1OOAE/BE PowerM OS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in ISOTOP envelope. The device Is intended for use in
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G03D440
BUK416-1OOAE/BE
OT227B
BUK416
bb53R31
BUK416-1OO0E
BUK416-100AE
YT150
30444
BUK416-100BE
BUK416-1OOAE
mkp-x
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ECG transistor replacement guide book free
Abstract: Burr-Brown Application Note AN-165 philips ecg replacement guide DC-DC Converter Burr-Brown 700 tl2272 BB IS0107 Tubes Catalog SDM857KG transistor manual substitution ecg book FREE DOWN design a 60hz notch filter
Text: BURR-BROWN APPLICATIONS HANDBOOK B U R R - BROW N l B B < B u rr-B ro w n 1C A p p l i c a t i o n s H andbook LI-459 1994 Burr-Brown Corporation Printed in USA Burr-Brown Corporation International Airport Industrial Park Mailing Address: PO Box 11400
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LI-459
ECG transistor replacement guide book free
Burr-Brown Application Note AN-165
philips ecg replacement guide
DC-DC Converter Burr-Brown 700
tl2272
BB IS0107
Tubes Catalog
SDM857KG
transistor manual substitution ecg book FREE DOWN
design a 60hz notch filter
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capacitor 1c8
Abstract: c17 dual mos transistor ai 757 BLF547 175B
Text: bbS3^31 0 0 3 0 1 bU BID M AP X Philips Semiconductors Product specification UHF push-pull power MOS transistor N BLF547 AMER P H IL IP S /D IS C R E T E b * iE ]> PIN CONFIGURATION FEATURES • High power gain • Easy power control • Good thermal stability
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00301b1*
OT262A2
OT262A2
MBA379
MRB022
capacitor 1c8
c17 dual mos
transistor ai 757
BLF547
175B
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8085 memory organization
Abstract: intel 8086 bus buffering and latching 8284 intel microprocessor architecture pin diagram of ic 8088 8288 bus controller Hardware and Software Interrupts of 8086 and 8088 microprocessors interface 8086 to 8155 intel mcs-85 user manual how to interface 8085 with 8155 intel iapx 88
Text: in t e i IF ^ iy M G M lV iAPX 88/10 8088 8-BIT HMOS MICROPROCESSOR 8-Bit Data Bus Interface • 24 Operand Addressing Modes 16-Bit Internal Architecture ■ Byte, Word, and Block Operations Direct Addressing Capability to 1 Mbyte of Memory ■ 8-Bit and 16-Bit Signed and Unsigned
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16-Bit
14-Word
755A-2
40-pin
AFN-CKI826B
8085 memory organization
intel 8086 bus buffering and latching
8284 intel microprocessor architecture
pin diagram of ic 8088
8288 bus controller
Hardware and Software Interrupts of 8086 and 8088
microprocessors interface 8086 to 8155
intel mcs-85 user manual
how to interface 8085 with 8155
intel iapx 88
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