btw38
Abstract: BTW38 Series
Text: PHILIPS INTERNATIONAL 7110öEb DGb2417 T2D « P H I N bSE D BTW38 SERIES THYRISTORS Glass-passivated silicon thyristors in metal envelopes, intended fo r use in power control circuits e.g. light and m otor control and power switching systems. The series consists o f reverse po larity types (anode to stud) identified by a suffix R: BTW38— 600R to
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DGb2417
BTW38
BTW38--
1000R.
38-600R
1000R
711002b
00b2424
BTW38 Series
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Untitled
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE _ b 'lE - » • bbSS'Gl 0027352 3T3 H A P X BTW38 SERIES THYRISTORS Glass-passivated silicon thyristors in metal envelopes, intended fo r use in power control circuits e.g. light and m otor control and power switching systems. The series consists o f reverse polarity types (anode to stud) identified by a suffix R: BTW38—600R to
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BTW38
BTW38â
1000R.
38-600R
1000R
002735b
M1391
00E73Sfl
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BTW38-600R
Abstract: BTW38 M1388 600R M1389 btw38 600r M1393
Text: PHILIPS INTERNATIONAL b5E D • 7110 ö S b QQbSHl? TSD M P H I N BTW 38 SERIES THYRISTORS Glass-passivated silicon thyristors in metal envelopes, intended fo r use in power control circuits e.g. light and m otor control and power switching systems. The series consists o f reverse polarity types (anode to stud) identified by a suffix R: BTW38— 600R to
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Q0b2417
BTW38
BTW38â
1000R.
1000r
BTW38-600R.
M1394
BTW38-600R
M1388
600R
M1389
btw38 600r
M1393
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BTW38
Abstract: BTW38-600R AM-1388 M1386 600R 800R M1389
Text: N AMER PHILIPS/DISCRETE b'ìE D • bbS3T31 QÜ27352 3T3 H A P X BTW38 SERIES THYRISTORS Glass-passivated silico n th y risto rs in m etal envelopes, intended fo r use in pow er co n tro l circ u its e.g. light and m o to r co n tro l and pow er sw itching systems.
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BTW38
BTW38â
1000R.
btw38-600r
1000r
BTW38-600R.
AM-1388
M1386
600R
800R
M1389
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BTW38-600R
Abstract: BTW38 600R 800R 1000R M1386
Text: N AMER PHILIPS/DISCRETE t.'ìE J> m ^53=131 G027355 3T3 H A P X BTW38 SERIES THYRISTORS Glass-passivated silicon th y ris to rs in m etal envelopes, intended fo r use in pow er c o n tro l c ircu its e.g. lig h t and m o to r c o n tro l and pow er sw itching systems.
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G027355
BTW38
BTW38â
1000R.
1000r
BTW38-600R.
BTW38-600R
600R
800R
1000R
M1386
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BTW42-600R
Abstract: TSM 1250 1000R mml 600 600R BTW38 BTW42 BTW42-600RC
Text: PHILIPS bSE D INTERNA TI ON AL Jl B 711Dfl2b DDb5431 3TD • P H I N BTW42 SERIES THYRISTORS Glass-passivated silicon thyristors in metal envelopes w ith high d V p /d t capabilities. They are intended fo r use in power control circuits and switching systems where high transients can occur e.g. phase
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DDbS43i
BTW42
BTW42â
1000R.
1000r
BTW38
BTW42-600R
TSM 1250
1000R
mml 600
600R
BTW42-600RC
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BTW42
Abstract: BTW42-600R
Text: L.5E D P H I L IP S I N T E R N A T I O N A L B 7 1 1 D ä 2 b DGt.5431 3TD • P H I N Jl BTW42 SERIES THYRISTORS Glass-passivated silicon thyristors in metal envelopes w ith high d V p /d t capabilities. They are intended fo r use in power control circuits and switching systems where high transients can occur e.g. phase
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BTW42
BTW42--600R
1000R.
711002b
BTW38
BTW42-600R
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Untitled
Abstract: No abstract text available
Text: _M_ N AMER PHILIPS/DISCRETE btiSBTBl 0011=143 T • QbE D I BTW42 SERIES THYRISTORS Glass-passivated silicon thyristors in metal envelopes with high d V ^ /d t capabilities. They are intended for use in power control circuits and switching systems where high transients can occur (e.g. phase
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BTW42
BTW42â
1000R.
BTW42--600
1000R
BTW38
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Untitled
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE bb53^31 0D273bb 'Hfl • APX b'lE J> I B T W 4 2 SERIES _ THYRISTORS Glass-passivated silicon thyristors in metal envelopes w ith high d V [j/d t capabilities. They are intended for use in power control circuits and switching systems where high transients can occur e.g. phase
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0D273bb
BTW42â
1000R.
42-600R
1000R
0D273bT
BTW42
BTW38
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PDF
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TSM 1250
Abstract: BTW42 BTW38 800R BTW42-600R BTW42-600RC IEC134
Text: fcjbS3c131 QDll':i43 T ObE D N AMER PHI LIPS/ DI SC RE TE BTW42 SERIES ^T~-ar-/£~ THYRISTORS Glass-passivated silicon thyristors in metal envelopes with high dVp/dt capabilities. They are intended for use in power control circuits and switching systems where high transients can occur e.g. phase
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BTW42
BTW42-600R
1000R.
BTW42-
1000R
0011m
BTW38
TSM 1250
800R
BTW42-600RC
IEC134
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FET BFW10
Abstract: KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11
Text: INDEX _ INDEX OF TYPE NUM BERS The inclusion of a type number in this publication does not necessarily imply its availability. Type no. book section Type no. book section Type no. book section BA220 BA221 BA223 BA281 BA314 SCOI SCOI SCOI SCOI
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BA220
BA221
BA223
BA281
BA314
BA315
BA316
BA317
BA318
BA423
FET BFW10
KP101A
FET BFW11
BDX38
KPZ20G
CQY58A
BFW10 FET
RPW100
B0943
OF FET BFW11
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OT239
Abstract: BT100a 02 CQX82A TRIO TA 80W CV7351 ZP1481 CV2154 ZP1430 triac mw 151 500r PL5727
Text: Milliard quick reference guide 1978/79 — discrete semiconductors — passive components — valves and tubes This guide gives quick reference data on Mullard electronic components. The information is deliberately abbreviated to give a rapid appreciation of salient characteristics, and to
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BPW22A
Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8
Text: Contents Page Page New product index Combined index and status codes viii x Mullard approved components BS9000, CECC, and D3007 lists CV list Integrated circuits Section index xliii 1 5 Standard functions LOGIC FAMILIES CMOS HE4000B family specifications CMOS HE4000B family survey
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BS9000,
D3007
HE4000B
80RIBUTION
BS9000
BPW22A
cm .02m z5u 1kv
pin configuration of BFW10
la4347
B2X84
TDA3653 equivalent
TRIAC TAG 9322
HEF40106BP equivalent
fx4054 core
dsq8
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BGY41
Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
Text: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.
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LCD01
BGY41
BFW10 FET transistor
CQY58
germanium
RX101
equivalent components FET BFW10
bd643
bf199
283 to92 600a transistor
zener phc
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