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    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors tb53^31 0031b73 3=n APX Product specification NPN 4 GHz wideband transistor — — BFQ136 N AUER PHILIPS/DISCRETE b^E ]> PINNING DESCRIPTION NPN transistor in a four-lead dual-emitter SOT122A envelope with a ceramic cap. Ail leads are isolated


    OCR Scan     		PDF 0031b73 BFQ136 OT122A

    LM 358

    Abstract: CA158AE LM358L CA158T ca2904c Transistor lm 358 lm 358 ic
    Text: H A RR IS SEfllCOND S E C T O R MQE D ill H A R R I S T-19-IO •4302271 D 0 3 1 b b 4 1 ■ HAS CA158, CA158A,CA258, CA258A, CA35Q, CA358A, CA2904, LM358*, LM2904* Dual Operational Amplifiers For Commercial, Industrial, and Military Applications August 1991


    OCR Scan     		PDF T-19-IO CA158, CA158A CA258, CA258A, CA35Q, CA358A, CA2904, LM358* LM2904* LM 358 CA158AE LM358L CA158T ca2904c Transistor lm 358 lm 358 ic

    km29v040t

    Abstract: yd 4145 km29v040 V040T
    Text: KM29V040T Flash ELECTRONICS 512Kx8 Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Power Supply The KM29V040T is a 512Kx8bit NAND Flash memory. • Organization - Memory Cell Array Its NAND cell structure provides the most cost-effective


    OCR Scan     		PDF KM29V040T 512Kx8 500us 400mil/0 KM29V040T 512Kx8bit KM29V040 yd 4145 V040T