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    BSS75 Search Results

    BSS75 Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Type PDF
    BSS75 Central Semiconductor PNP SILICON HIGH VOLTAGE TRANSISTOR Original PDF
    BSS75 Semelab Bipolar PNP Device in a Hermetically Sealed TO18 Metal Package - Pol=PNP / Pkg=TO18 / Vceo=250 / Ic=0.5 / Hfe=35-150 / fT(Hz)=50M / Pwr(W)=0.5 Original PDF
    BSS75 Motorola European Master Selection Guide 1986 Scan PDF
    BSS75 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BSS75 Unknown Diode, Transistor, Thyristor Datasheets and more Scan PDF
    BSS75 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BSS75 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    BSS75S Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BSS75S STMicroelectronics Shortform Data Book 1988 Short Form PDF
    BSS75S STMicroelectronics High Voltage Amplifier Scan PDF

    BSS75 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BSS74

    Abstract: jc-70 BSS75 BSS76
    Text: DATA SHEET BSS74 BSS75 BSS76 PNP SILICON HIGH VOLTAGE TRANSISTOR JEDEC TO-18 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR BSS74 series types are hermetically sealed PNP small signal transistors manufactured by the epitaxial planar process designed for high voltage amplifier applications.


    Original     		PDF BSS74 BSS75 BSS76 BSS74 jc-70 BSS75 BSS76

    BSS75

    Abstract: No abstract text available
    Text: BSS75 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar PNP Device. VCEO = 250V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.5A All Semelab hermetically sealed products


    Original     		PDF BSS75 O206AA) 10/30m 2-Aug-02 BSS75

    Untitled

    Abstract: No abstract text available
    Text: BSS72S HIGH VOLTAGE AMPLIFIER PRELIMINARY DATA DESCRIPTION The BSS72S is a silicon planar epitaxial NPN transistor in Jedec TO-18 metal case. It is designed for high voltage amplifier and switching applications at current levels from 100 µA to 100 mA. The complementary PNP type is the BSS75S.


    Original     		PDF BSS72S BSS72S BSS75S.

    Untitled

    Abstract: No abstract text available
    Text: BSS75 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar PNP Device. VCEO = 250V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.5A All Semelab hermetically sealed products


    Original     		PDF BSS75 O206AA) 10/30m 19-Jun-02

    Untitled

    Abstract: No abstract text available
    Text: BSS75 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar PNP Device. VCEO = 250V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.5A All Semelab hermetically sealed products


    Original     		PDF BSS75 O206AA) 10/30m 16-Jul-02

    MSC2404

    Abstract: MPF3821 BC237 MPS8093 BCY72 MMBF4856 MAD130P MPS3866 bcy71 ALTERNATIVE BSS72
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP RF Amplifier Transistor Surface Mount MSA1022-CT1 Motorola Preferred Device COLLECTOR 3 3 2 1 2 BASE 1 EMITTER MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector–Base Voltage VCBO – 30 Vdc Collector–Emitter Voltage


    Original     		PDF MSA1022-CT1 Emitte218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 MPF3821 BC237 MPS8093 BCY72 MMBF4856 MAD130P MPS3866 bcy71 ALTERNATIVE BSS72

    BF245

    Abstract: BC237 MSC2404 mps8093 bf244 MSA1022 MSC2295-BT1 msc2295 MAD1107P MPS6568
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN RF Amplifier Transistors Surface Mount COLLECTOR 3 MSC2295-BT1 MSC2295-CT1 Motorola Preferred Devices 3 2 BASE 1 EMITTER 2 1 MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector–Base Voltage V(BR)CBO 30


    Original     		PDF MSC2295-BT1 MSC2295-CT1 MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BF245 BC237 mps8093 bf244 MSA1022 msc2295 MAD1107P MPS6568

    stencil

    Abstract: BC237 automatic heat detector project report BC393 equivalent
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Schottky Barrier Diode BAT54T1 These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and


    Original     		PDF BAT54T1 Ju218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 stencil BC237 automatic heat detector project report BC393 equivalent

    BC237

    Abstract: level shifter 2N5401 2771 040 0002 MUN5214T1
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Bias Resistor Transistor MUN5211T1 SERIES NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network Motorola Preferred Devices This new series of digital transistors is designed to replace a single device


    Original     		PDF SC-70/SOT-323 Spa218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237 level shifter 2N5401 2771 040 0002 MUN5214T1

    bs170 replacement

    Abstract: BC237 BC30 transistor K 2056
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Switching BS170 N–Channel — Enhancement 1 DRAIN  2 GATE 3 SOURCE MAXIMUM RATINGS 1 Rating Drain – Source Voltage Gate–Source Voltage — Continuous — Non–repetitive tp ≤ 50 µs Drain Current(1)


    Original     		PDF BS170 226AA) DS218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 bs170 replacement BC237 BC30 transistor K 2056

    transistor bc237 bc337

    Abstract: replacement transistor BC337 bc337 TRANSISTOR equivalent bc338 equivalent BC337 TO-92 Generic BC337 circuit example BC160-16 BC337-25 "pin compatible" BC237 BC338 REPLACEMENT
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors NPN Silicon BC337,-16,-25,-40 BC338,-16,-25,-40 COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol BC337 BC338 Unit Collector – Emitter Voltage VCEO 45 25 Vdc Collector – Base Voltage


    Original     		PDF BC337 BC338 226AA) Junction218A MSC1621T1 MSC2404 MSD1819A MV1620 transistor bc237 bc337 replacement transistor BC337 bc337 TRANSISTOR equivalent bc338 equivalent BC337 TO-92 Generic BC337 circuit example BC160-16 BC337-25 "pin compatible" BC237 BC338 REPLACEMENT

    BC237

    Abstract: MPS-A70 equivalent
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistor MPSA70 PNP Silicon COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 CASE 29–04, STYLE 1 TO–92 TO–226AA MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO –40 Vdc Emitter – Base Voltage


    Original     		PDF MPSA70 226AA) CHARACTERI218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 BC237 MPS-A70 equivalent

    bc182 equivalent 2n2907

    Abstract: bc183 equivalent BC237 BC182 bc184 BF245 bc184 equivalent
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors BC182,A,B NPN Silicon BC183 BC184 COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol BC182 BC183 BC184 Unit Collector – Emitter Voltage VCEO 50 30 30 Vdc Collector – Base Voltage VCBO


    Original     		PDF BC182 BC183 BC184 BC184 226AA) Junction218A MSC1621T1 MSC2404 bc182 equivalent 2n2907 bc183 equivalent BC237 BF245 bc184 equivalent

    transistor MPS5771

    Abstract: BC237 bfw4
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High-Speed Switching Diode MMBD914LT1 Motorola Preferred Device 3 CATHODE 1 ANODE 3 1 2 MAXIMUM RATINGS Rating Symbol Value Unit Reverse Voltage VR 100 Vdc Forward Current IF 200 mAdc IFM surge 500 mAdc Symbol Max Unit


    Original     		PDF MMBD914LT1 236AB) DE218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 transistor MPS5771 BC237 bfw4

    WT transistor

    Abstract: BC237 S11S 2n441 BF244B 2N3799 JFET BF245 C4 SOT-323 2N3819 MOTOROLA
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Transistor N–Channel 2 SOURCE MMBF5484LT1 Motorola Preferred Device 3 GATE 1 DRAIN 3 MAXIMUM RATINGS Rating Drain–Gate Voltage Reverse Gate–Source Voltage Forward Gate Current 1 Symbol Value Unit VDG 25 Vdc


    Original     		PDF MMBF5484LT1 236AB) C218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 WT transistor BC237 S11S 2n441 BF244B 2N3799 JFET BF245 C4 SOT-323 2N3819 MOTOROLA

    2N5457 MOTOROLA

    Abstract: 2N5457 equivalent BC237 transistor 2N5457
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFETs Ċ General Purpose N–Channel — Depletion 2N5457 1 DRAIN *Motorola Preferred Device 3 GATE 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain – Source Voltage VDS 25 Vdc Drain – Gate Voltage VDG 25 Vdc


    Original     		PDF 2N5457 226AA) MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 2N5457 MOTOROLA 2N5457 equivalent BC237 transistor 2N5457

    BC237

    Abstract: jedec package TO-226AA
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Dual Series Switching Diode BAV99LT1 ANODE 1 Motorola Preferred Device CATHODE 2 3 CATHODE/ANODE 3 1 2 CASE 318 – 08, STYLE 11 SOT– 23 TO – 236AB MAXIMUM RATINGS (EACH DIODE) Rating Symbol Value Unit Reverse Voltage


    Original     		PDF BAV99LT1 236AB) J218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 BC237 jedec package TO-226AA

    BU104

    Abstract: BSX21 BU103 8SS44
    Text: SEMELAB pic - SELECTOR GUIDE DISCRETE BI-POLAR DEVICES TypeN o Description BS250CSM4 8SS44 BSS44 CECC BSS50 BSS51 BSS52 BSS60 BSS61 BSS62 BSS71 BSS72 BSS73 BSS74 BSS74R BSS75 BSS76 BSS77 BSS78 BSV15 BSV16 BSV17 BSV60 BSV64 BSV64 CECC BSV64-SM BSV91 BSW66 BSW66CECC


    OCR Scan     		PDF BS250CSM4 8SS44 BSS44 BSS50 BSS51 BSS52 BSS60 BSS61 BSS62 BSS71 BU104 BSX21 BU103

    BSS72S

    Abstract: BSS75S BH RT transistor
    Text: 30E D rZ 7 • QG3 1 Q31 fi T - 37-15 S G S -T H O M S O N «im iiCTtfM flO S_ BSS75S S G S-THOMSON HIGH VOLTAGE AMPLIFIER P R E LIM IN A R Y DATA DESCRIPTION T h e B S S 7 5S is a silicon planar epitaxial P N P tran­ sistor in Jedec T O -1 8 m etal case. It is designed for


    OCR Scan     		PDF QG31Q31 T-37-1S BSS75S BSS75S BSS72S. -50mA 15SIS BSS72S BH RT transistor

    2N2369At

    Abstract: 2N4237 High-Voltage Amplifiers 2N3546 2N3495 2N4033 MM4001 2N5679 MOTOROLA 2n5680 motorola 2N3114
    Text: Metal Small-Signal Transistors The fo llo w ing sele c to r guide ta b le s also indicate th o se M o to ro la sm all-sig nal m etal can transisto rs which are q u a lifie d under C E C C 50000, and M IL-19500 high-rel requirem ents. Devices are availab le to C E C C Levels L, F


    OCR Scan     		PDF MIL-19500 i2N5415* 2N3637# MM4001 2N3635 2N3634# 2N3495 2N5680 MM4000 MM5007 2N2369At 2N4237 High-Voltage Amplifiers 2N3546 2N4033 2N5679 MOTOROLA 2n5680 motorola 2N3114

    MMBF112L

    Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211
    Text: motorcla sc xstrs / r ia e i o I bH t,?as4 3 o o ö s t ii Small-Signal Bipolar Transistors Plastic-Encapsulated M o to ro la 's s m a ll-s ig n a l T O -2 26 p la s tic tra n s is to rs e n c o m p a s s h u n d re d s o f d e v ic e s w ith a w id e v a rie ty


    OCR Scan     		PDF 06050L MMBD914L BAS16L BAL99L MBAV70L MBAV99L MBAV74 BD2835XL MBD2836XL MMBD2837XL MMBF112L MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211

    MM4003

    Abstract: 2N4033 2N2905 BC177 2N3495 2N5680 transistor 2N4033 2N3227 2N3506 2N3725
    Text: Metal Small-Signal Transistors The fo llo w ing sele c to r guide ta b le s also indicate th o se M o to ro la sm all-sig nal m etal can transisto rs which are q u a lifie d under C E C C 50000, and M IL-19500 high-rel requirem ents. Devices are availab le to C E C C Levels L, F


    OCR Scan     		PDF MIL-19500 BSV16 BC161 2N2904A# 2N2905AI BC160 2N29O40 2N2905# 2N2605# 2N3486 MM4003 2N4033 2N2905 BC177 2N3495 2N5680 transistor 2N4033 2N3227 2N3506 2N3725

    triac zd 607

    Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
    Text: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.


    OCR Scan     		PDF SG73/D triac zd 607 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845

    TDA0161 equivalent

    Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
    Text: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:


    OCR Scan     		PDF