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    BSS138 N MOS Search Results

    BSS138 N MOS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    BSS138 N MOS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BSS138

    Abstract: transistor bss138
    Text: May 1995 BSS138 N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products


    Original     		PDF BSS138 OT-23 BSS138 transistor bss138

    BSS138 TO236

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD BSS138 Preliminary Power MOSFET N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE „ 3 DESCRIPTION This device employs advanced MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the


    Original     		PDF BSS138 OT-23-3 O-236) OT-23-3 QW-R502-271 BSS138 TO236

    Untitled

    Abstract: No abstract text available
    Text: BSS138 N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance


    Original     		PDF BSS138

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD BSS138 Power MOSFET N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE  DESCRIPTION This device employs advanced MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the


    Original     		PDF BSS138 BSS138G-AE2-R BSS138G-AL3-R QW-R502-271

    BSS138G

    Abstract: BSS138 TO236 BSS138
    Text: UNISONIC TECHNOLOGIES CO., LTD BSS138 Preliminary Power MOSFET N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE „ DESCRIPTION 3 This device employs advanced MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves


    Original     		PDF BSS138 OT-23-3 O-236) BSS138G-AE2-R QW-R502-271 BSS138G BSS138 TO236 BSS138

    BSS138G

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD BSS138 Preliminary Power MOSFET N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE „ DESCRIPTION This device employs advanced MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the


    Original     		PDF BSS138 OT-23-3 OT-323 QW-R502-271 BSS138G

    BSS138/J1

    Abstract: BSS138 onr 20
    Text: BSS138 Small Signal MOSFET N-Channel 3 DRAIN SOT-23 Features: 3 1 *Low On-Resistance : 3.5 Ω *Low Input Capacitance: 40PF *Low Out put Capacitance : 12PF *Low Threshole :1 .5V *Fast Switching Speed : 20ns GATE 1 2 2 SOURCE Application: * DC to DC Converter


    Original     		PDF BSS138 OT-23 BSS138/J1 BSS138 onr 20

    bss138 MARKING

    Abstract: No abstract text available
    Text: BSS138 N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead, Halogen and Antimony Free, RoHS Compliant Note 1


    Original     		PDF BSS138 AEC-Q101 J-STD-020 MIL-STD-202, DS30144 bss138 MARKING

    BSS138G-AE3-R

    Abstract: BSS138_G BSS138G BSS138L BSS138 BSS13
    Text: UNISONIC TECHNOLOGIES CO., LTD BSS138 Preliminary Power MOSFET N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE „ DESCRIPTION This device employs advanced MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the


    Original     		PDF BSS138 BSS138L BSS138G BSS138-AE3-R BSS138L-AE3-R QW-R502-271 BSS138G-AE3-R BSS138_G BSS138G BSS138L BSS138 BSS13

    BSS138

    Abstract: No abstract text available
    Text: BSS138 N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • Low On-Resistance   Low Gate Threshold Voltage   Low Input Capacitance  Fast Switching Speed  Moisture Sensitivity: Level 1 per J-STD-020  Low Input/Output Leakage 


    Original     		PDF BSS138 J-STD-020 MIL-STD-202, AEC-Q101 DS30144 BSS138

    BSS138-7

    Abstract: BSS138 transistor bss138 bss138 MARKING
    Text: BSS138 N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance


    Original     		PDF BSS138 OT-23 BSS138-7 BSS138 transistor bss138 bss138 MARKING

    "MARKING CODE SS"

    Abstract: marking code SS BSS138
    Text: BSS138 N-Channel Enhancement-Mode MOSFET Low V t c u d o r TO-236AB SOT-23 P H C w e N N RE FET T Top View N E G GS(th) VDS 50V RDS(ON) 3.5Ω ID 220mA .122 (3.1) .110 (2.8) 0.031 (0.8) .016 (0.4) 0.035 (0.9) .056 (1.43) .052 (1.33) 3 .016 (0.4) .016 (0.4)


    Original     		PDF BSS138 O-236AB OT-23) 220mA OT-23 290mA, 440mA, "MARKING CODE SS" marking code SS BSS138

    K38 mosfet

    Abstract: BSS138 equivalent equivalent of bss138 bss138 k38 BSS138-7-F
    Text: BSS138 N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead, Halogen and Antimony Free, RoHS Compliant Note 1


    Original     		PDF BSS138 AEC-Q101 J-STD-020 MIL-STD-202, DS30144 K38 mosfet BSS138 equivalent equivalent of bss138 bss138 k38 BSS138-7-F

    transistor bss138

    Abstract: bss138 bss138 MARKING BSS138 SS
    Text: BSS138 N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance


    Original     		PDF BSS138 OT-23 transistor bss138 bss138 bss138 MARKING BSS138 SS

    bss138 MARKING c38

    Abstract: No abstract text available
    Text: BSS138 N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead, Halogen and Antimony Free, RoHS Compliant Note 1


    Original     		PDF BSS138 AEC-Q101 J-STD-020 MIL-STD-202, DS30144 bss138 MARKING c38

    Untitled

    Abstract: No abstract text available
    Text: BSS138 N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Case: SOT23 Case Material: Molded Plastic. UL Flammability Classification


    Original     		PDF BSS138 J-STD-020 MIL-STD-202, AEC-Q101 DS30144

    BSS138

    Abstract: No abstract text available
    Text: BSS138 N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • Low On-Resistance   Low Gate Threshold Voltage   Low Input Capacitance  Fast Switching Speed  Moisture Sensitivity: Level 1 per J-STD-020  Low Input/Output Leakage 


    Original     		PDF BSS138 J-STD-020 MIL-STD-202, AEC-Q101 DS30144 BSS138

    mosfet low vgs

    Abstract: Marking code SS
    Text: BSS138 Vishay Semiconductors New Product formerly General Semiconductor N-Channel Enhancement-Mode MOSFET Low VGS th VDS 50V RDS(ON) 3.5Ω ID 220mA TO-236AB (SOT-23) .122 (3.1) .110 (2.8) .016 (0.4) Top View .056 (1.43) .052 (1.33) 3 .016 (0.4) .016 (0.4)


    Original     		PDF BSS138 220mA O-236AB OT-23) OT-23 220mA 290mA, 440mA, mosfet low vgs Marking code SS

    B5G1

    Abstract: BSS138
    Text: National May 1995 Semiconductor~ BSS138 N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode field effect transistors are produced using Nationals proprietary, high cell density, DMOS technology. These products


    OCR Scan     		PDF BSS138 OT-23 B5G1 BSS138

    sot23 BS170

    Abstract: 2SK2671 P3NB60 IXFN27N80 IRFL014N STP22NE10L irf6348 IRF7305 rfp40n IXTN21N100
    Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su electronics Ten: 495 739-09-95, 644-41-29 TpaH3MCTopbi N-MOSFET (copTMpoBKa no TOKy lD) Kofl: BS107 BSS123 BS170 BSS138 BS108 BSN304 BSS89 IRFD310 IRFD420 IRFD210 IRFD320 2N7002 IRFD220 IRFL210 IRFD110 IRLD110 IRFD120


    OCR Scan     		PDF BS107 BSS123 BS170 BSS138 BS108 BSN304 BSS89 IRFD310 IRFD420 IRFD210 sot23 BS170 2SK2671 P3NB60 IXFN27N80 IRFL014N STP22NE10L irf6348 IRF7305 rfp40n IXTN21N100

    bss138

    Abstract: bss138 50
    Text: P A IR C H II- D MICDNDUCTQ R May 1995 tm BSS138 N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products


    OCR Scan     		PDF BSS138 SS138 bss138 50

    Silicon N-Channel Junction FET sot23

    Abstract: bss138 MARKING transistor bss138 BSS138
    Text: Philips Components Data sheet status Preliminary specification date of issue September 1990 FEATURES BSS138 N-channel enhancement mode vertical D-MOS FET PINNING - SOT223 PIN CONFIGURATION • Low threshold voltage • CMOS compatible • Low on-resistance.


    OCR Scan     		PDF BSS138 OT223 MB8160 Silicon N-Channel Junction FET sot23 bss138 MARKING transistor bss138 BSS138

    fet n-channel pin configuration

    Abstract: transistor 537 b 360 DMOSFET Silicon N-Channel Junction FET sot23 vertical mosfet BSS138 MBB180
    Text: 71 lDfl2b 0 0 b 7 ô li5 LTD « P H I N Philips Semiconductors BSS138 Data sheet status Prelim inary specification date of issue September 1990 FEATURES N-channel enhancement mode vertical D-MOS FET PIN CO NFIGURATION PINNING - SOT223 PIN • Low threshold voltage


    OCR Scan     		PDF BSS138 OT223 MBB180 fet n-channel pin configuration transistor 537 b 360 DMOSFET Silicon N-Channel Junction FET sot23 vertical mosfet BSS138 MBB180

    Untitled

    Abstract: No abstract text available
    Text: May 1995 F A IR C H IL D SEM IC ONDUCTO R tm BSS138 N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products


    OCR Scan     		PDF BSS138 BSS138