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    BSN20 Search Results

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    BSN20 Price and Stock

    Diodes Incorporated BSN20-7

    MOSFET N-CH 50V 500MA SOT23
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BSN20-7 Reel 483,000 3,000
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    Avnet Americas BSN20-7 Reel 3,000 8 Weeks 3,000
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    • 10000 $0.03545
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    BSN20-7 Reel 3,000
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    BSN20-7 Ammo Pack 16 Weeks, 3 Days 5
    • 1 $0.353
    • 10 $0.249
    • 100 $0.131
    • 1000 $0.131
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    Mouser Electronics BSN20-7 132,473
    • 1 $0.33
    • 10 $0.23
    • 100 $0.095
    • 1000 $0.07
    • 10000 $0.048
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    Bristol Electronics BSN20-7 4,091
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    TME BSN20-7 1,975 5
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    • 10 $0.1883
    • 100 $0.0696
    • 1000 $0.0626
    • 10000 $0.0584
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    Avnet Asia BSN20-7 12 Weeks 9,000
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    • 10000 $0.04165
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    New Advantage Corporation BSN20-7 48,000 1
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    • 10000 $0.0343
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    Nexperia BSN20BKR

    MOSFET N-CH 60V 265MA TO236AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BSN20BKR Reel 153,000 3,000
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    • 10000 $0.04852
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    BSN20BKR Cut Tape 7,526 1
    • 1 $0.37
    • 10 $0.257
    • 100 $0.1256
    • 1000 $0.07278
    • 10000 $0.07278
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    Avnet Americas BSN20BKR Reel 6 Weeks 3,000
    • 1 -
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    • 10000 $0.03168
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    Mouser Electronics BSN20BKR 22,281
    • 1 $0.36
    • 10 $0.257
    • 100 $0.105
    • 1000 $0.071
    • 10000 $0.044
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    Rochester Electronics BSN20BKR 282,000 1
    • 1 $0.0318
    • 10 $0.0318
    • 100 $0.0299
    • 1000 $0.027
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    TTI BSN20BKR Reel 39,000 3,000
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    • 10000 $0.0322
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    TME BSN20BKR 2,460 5
    • 1 -
    • 10 $0.1433
    • 100 $0.0607
    • 1000 $0.0536
    • 10000 $0.0481
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    Avnet Asia BSN20BKR 6 Weeks 27,000
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    New Advantage Corporation BSN20BKR 192,000 1
    • 1 -
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    • 10000 $0.0426
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    Saraha Case LLC SB-S-N20U-CL/BK

    BLACK SAMSUNG GALAXY NOTE20 ULTR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SB-S-N20U-CL/BK 1,997 1
    • 1 $19.99
    • 10 $19.99
    • 100 $19.99
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    Saraha Case LLC SB-S-N20-ESR-BK

    BLACK SAMSUNG GALAXY NOTE20 ESR
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    DigiKey SB-S-N20-ESR-BK 1,997 1
    • 1 $29.99
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    Saraha Case LLC SB-S-N20U-WA-BK

    BLACK FAUX LEATHER SAMSUNG GALAX
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SB-S-N20U-WA-BK 1,995 1
    • 1 $39.99
    • 10 $39.99
    • 100 $39.99
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    Find more BSN20 price and stock on Findchips.com

    BSN20 Datasheets (24)

    Part ECAD Model Manufacturer Description Curated Type PDF
    BSN20 Diodes N-CHANNEL ENHANCEMENT MODE FIELD MOSFET Original PDF
    BSN20 General Semiconductor MOSFET, Enhancement, N Channel, 50V, SOT-23, 3-Pin Original PDF
    BSN20 Philips Semiconductors N-channel enhancement mode vertical D-MOS transistor Original PDF
    BSN20 Philips Semiconductors N-channel enhancement mode field-effect transistor Original PDF
    BSN20 Philips Semiconductors N-Channel Enhancement Mode Vertical D-MOS Transistor Original PDF
    BSN20-03 Philips Semiconductors N-channel enhancement mode field-effect transistor Original PDF
    BSN20,215 NXP Semiconductors N-channel enhancement mode field-effect transistor - Configuration: Single N-channel ; ID DC: 0.173 A; RDS(on): 15000@10V20000@5V mOhm; VDSmax: 50 V; Package: SOT23 (TO-236AB); Container: Tape reel smd Original PDF
    BSN20,235 NXP Semiconductors N-channel enhancement mode field-effect transistor - Configuration: Single N-channel ; ID DC: 0.173 A; RDS(on): 15000@10V20000@5V mOhm; VDSmax: 50 V; Package: SOT23 (TO-236AB); Container: Tape reel smd Original PDF
    BSN204 Philips Semiconductors N-Channel Enhancement Mode Vertical D-MOS Transistor Original PDF
    BSN204 Philips Semiconductors N-Channel Enhancement Mode Vertical D-MOS Transistor Scan PDF
    BSN204A Philips Semiconductors N-Channel Enhancement Mode Vertical D-MOS Transistor Original PDF
    BSN204A Philips Semiconductors N-Channel Enhancement Mode Vertical D-MOS Transistor Scan PDF
    BSN205 Philips Semiconductors N-channel enhancement mode vertical D-MOS transistor Original PDF
    BSN205 Philips Semiconductors N-Channel Enhancement Mode Vertical D-MOS Transistor Original PDF
    BSN205A Philips Semiconductors N-channel enhancement mode vertical D-MOS transistor Original PDF
    BSN205A Philips Semiconductors N-Channel Enhancement Mode Vertical D-MOS Transistor Original PDF
    BSN20-7 Diodes FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 50V 500MA SOT23 Original PDF
    BSN20BK215 Nexperia SMALL SIGNAL N-CHANNEL MOSFET Original PDF
    BSN20BKR Nexperia USA Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 60V 0.265A SOT-23 Original PDF
    BSN20Q-7 Diodes Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET NCH 50V 500MA SOT23 Original PDF

    BSN20 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    XC6206MR

    Abstract: No abstract text available
    Text: 1 2 3 4 5 6 A A XC6206MR VOUT 2 1uF 3.3V GND C2 C1 1uF 1 VIN C3 100nF VSS U3 3 5V 稳压电路 B SCL SDA 5V GND 10K 10K R4 R3 5V SDA Q1 BSN20 3.3V Grove SCL Q2 BSN20 3.3V GND 10K T_SDA R2 R1 10K 3.3V B 1J1 2 3 4 1U1 VDD TSL2561 SDA 6 T_SDA 2 ADDR INT 5 3 GND SCL 4 T_SCL


    Original     		PDF XC6206MR 100nF BSN20 TSL2561T XC6206MR

    TRANSISTOR SMD MARKING CODE dk

    Abstract: BSN20 marking M8p TRANSISTOR BSN20 BSN20 MARKING SMD TRANSISTOR MARKING code DD m8p smd TRANSISTOR SMD MARKING CODE SP TRANSISTOR SMD CODE PACKAGE SOT23 501 sot23 marking code m8p
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BSN20 N-channel enhancement mode vertical D-MOS transistor Product specification Supersedes data of April 1995 File under Discrete Semiconductors, SC13b 1997 Jun 18 Philips Semiconductors Product specification N-channel enhancement mode


    Original     		PDF BSN20 SC13b SCA54 137107/00/02/pp8 TRANSISTOR SMD MARKING CODE dk BSN20 marking M8p TRANSISTOR BSN20 BSN20 MARKING SMD TRANSISTOR MARKING code DD m8p smd TRANSISTOR SMD MARKING CODE SP TRANSISTOR SMD CODE PACKAGE SOT23 501 sot23 marking code m8p

    BSN20 MARKING

    Abstract: BSN20 SOT-23 016
    Text: BSN20 N-Channel Enhancement-Mode MOSFET TO-236AB SOT-23 .016 (0.4) .056 (1.43) .052 (1.33) 3 .016 (0.4) Pin Configuration .007 (0.175) .005 (0.125) max. .004 (0.1) .037(0.95) .037(0.95) .016 (0.4) 0.035 (0.9) 0.079 (2.0) 1. Gate 2. Source 3. Drain 2 0.031 (0.8)


    Original     		PDF BSN20 O-236AB OT-23) 180mA OT-23 BSN20 MARKING BSN20 SOT-23 016

    Untitled

    Abstract: No abstract text available
    Text: BSN205 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)200 V(BR)GSS (V)20 I(D) Max. (A)300m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)1.0 Minimum Operating Temp (øC)


    Original     		PDF BSN205

    Untitled

    Abstract: No abstract text available
    Text: Small-Signal DMOS Transistors Package Leaded VDSS Volt TO-92 TO-92 N-Channel P-Channel 50 60 240 BS250 2N7000 Surface Mount SOT-23 SOT-23 ID mA RDS(ON) (Ω) @ VGS /ID BSN20 + 100 15 10V / 100mA 2N7002 250 3 10V / 500mA 250 5 10V / 200mA 300 5 10V / 500mA


    Original     		PDF OT-23 2N7000 BSN20 BS250 100mA 2N7002 500mA 200mA

    BSN20

    Abstract: HZG303
    Text: BSN20 N-channel enhancement mode field-effect transistor Rev. 03 — 26 June 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: BSN20 in SOT23.


    Original     		PDF BSN20 BSN20 03ab44 HZG303

    BSN20 MARKING

    Abstract: BSN20 equivalent bsn20
    Text: BSN20 N-CHANNEL ENHANCEMENT MODE FIELD MOSFET Product Summary Features and Benefits RDS ON ID TA = 25°C 1.8Ω @ VGS = 10V 500mA 2.0Ω @ VGS = 4.5V 450mA V(BR)DSS • • • • • • • Mechanical Data Description and Applications • • This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching


    Original     		PDF BSN20 450mA 500mA AEC-Q101 DS31898 BSN20 MARKING BSN20 equivalent bsn20

    Untitled

    Abstract: No abstract text available
    Text: BSN204 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)200 V(BR)GSS (V)20 I(D) Max. (A)250m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)1.0 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)1.0 Minimum Operating Temp (øC)


    Original     		PDF BSN204

    Untitled

    Abstract: No abstract text available
    Text: BSN204A Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)200 V(BR)GSS (V)20 I(D) Max. (A)250m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)1.0 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)1.0 Minimum Operating Temp (øC)


    Original     		PDF BSN204A

    Untitled

    Abstract: No abstract text available
    Text: BSN20 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)50 V(BR)GSS (V) I(D) Max. (A)100m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)300m Minimum Operating Temp (øC)


    Original     		PDF BSN20

    Untitled

    Abstract: No abstract text available
    Text: SO T2 3 BSN20BK 60 V, N-channel Trench MOSFET 18 December 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.


    Original     		PDF BSN20BK O-236AB)

    BSN20 equivalent

    Abstract: No abstract text available
    Text: BSN20 N-CHANNEL ENHANCEMENT MODE FIELD MOSFET Product Summary Features and Benefits RDS ON ID TA = 25°C 1.8Ω @ VGS = 10V 500mA 2.0Ω @ VGS = 4.5V 450mA V(BR)DSS • • • • • • • Mechanical Data Description and Applications • • This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching


    Original     		PDF BSN20 500mA 450mA J-STD-020 DS31898 BSN20 equivalent

    Untitled

    Abstract: No abstract text available
    Text: BSN20 Green N-CHANNEL ENHANCEMENT MODE FIELD MOSFET Product Summary Features and Benefits RDS ON ID TA = +25°C 1.8Ω @ VGS = 10V 500mA 2.0Ω @ VGS = 4.5V 450mA V(BR)DSS • • • • • • • • Description Mechanical Data This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching


    Original     		PDF BSN20 500mA 450mA J-STD-020 DS31898

    Untitled

    Abstract: No abstract text available
    Text: BSN205A Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)200 V(BR)GSS (V)20 I(D) Max. (A)300m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)1.0 Minimum Operating Temp (øC)


    Original     		PDF BSN205A

    bsn20

    Abstract: BSN20 MARKING
    Text: BSN20 Vishay Semiconductors New Product formerly General Semiconductor N-Channel Enhancement-Mode MOSFET VDS 50V RDS ON 6Ω ID 180mA H C EN ET R T ENF TO-236AB (SOT-23) .122 (3.1) .110 (2.8) .016 (0.4) Top View G .056 (1.43) .052 (1.33) 3 .016 (0.4) 0.079 (2.0)


    Original     		PDF BSN20 180mA O-236AB OT-23) OT-23 15-May-02 bsn20 BSN20 MARKING

    BbN20

    Abstract: MSB003 BSN20
    Text: • Philips Semiconductors — bbS3T31 a0237t,S Tib ■ N AUER P H I L I P S / D I S C R E T E APX _ „ Product specification b7E D N-channel enhancement mode vertical D-MOS transistor FEATURES BSN20 QUICK REFERENCE DATA • Direct interface to C-MOS, TTL,


    OCR Scan     		PDF a0237t BSN20 btiS3T31 237hfl BbN20 MM794 MRA78S VaSimat25 BbN20 MSB003 BSN20

    transistor w 431

    Abstract: tL 431 transistor BSN204 transistor tl 431 BSN204A
    Text: Philips Components BSN204/BSN204A Data «heat status Product specification date of issus December 1990 FEATURES N-channel enhancement mode vertical D-MOS transistor QUICK REFERENCE DATA • Direct interface to C-MOS, TTL, etc. • High-speed switching • No secondary breakdown.


    OCR Scan     		PDF BSN204/BSN204A BSN204) BSN204A) transistor w 431 tL 431 transistor BSN204 transistor tl 431 BSN204A

    BSN205

    Abstract: BSN205A
    Text: BSN205 BSN205A N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in a TO-92 variant envelope. Designed prim arily as a line current interrupter in telephone sets, it can also be applied in other applications


    OCR Scan     		PDF BSN205 BSN205A 0D3b021 7ZB3773 0G3b022 BSN205 BSN205A

    BSN20 MARKING

    Abstract: BSN20
    Text: G en era l \J S e m i c o n d u c t o r _ BSN20 N-Channel Enhancement-Mode MOSFET % Vds 5 0 V RdS ON 6 f i Id 1 8 0 m A TO-236AB (SOT-23) •122(3.1) .110(2.8) 0.031 (0.8) .016 (0.4) T o p V ie w R+ 1— co m 0 035 (0.9) CO in m o o Pin Configuration


    OCR Scan     		PDF BSN20 O-236AB OT-23) OT-23 OT-23, S0T-23-6L BSN20 MARKING BSN20

    smd transistor ds 65

    Abstract: BSN20 transistor SMD QQ smd transistor 142
    Text: Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor BSN20 FEATURES PINNING - SOT23 • Direct interface to C-MOS, TTL, etc. PIN SYMBOL DESCRIPTION a gate 2 s source 3 d drain • High-speed switching 1 • No secondary breakdown.


    OCR Scan     		PDF BSN20 1997Jun BA782 smd transistor ds 65 BSN20 transistor SMD QQ smd transistor 142

    Untitled

    Abstract: No abstract text available
    Text: btS3T31 00237t,S Tib • APX N AUER PHILIPS/DISCRETE b7E D« N-channel enhancement mode vertical D>MOS transistor Philips Semiconductors FEATURES Product specification BSN20 QUICK REFERENCE DATA • Direct interface to C-MOS, TTL, etc. • High-speed switching


    OCR Scan     		PDF btS3T31 00237t BSN20 MRA783 MRA782 D237bfl

    Untitled

    Abstract: No abstract text available
    Text: _ BSN205 BSN205A JV N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in a TO-92 variant envelope. Designed primarily as a line current interrupter in telephone sets, it can also be applied in other applications


    OCR Scan     		PDF BSN205 BSN205A D3b021 003fc

    smd transistor marking 2y

    Abstract: m8p smd smd transistor 2y ti m8p smd transistor marking m8p TRANSISTOR SMD 2y smd transistor m8 sot23 marking code m8p transistor marking 2y marking M8p
    Text: Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor BSN20 FEATURES PINNING - SOT23 • Direct interface to C-MOS, TTL, etc. PIN SYMBOL DESCRIPTION • High-speed switching 1 g gate • No secondary breakdown. 2


    OCR Scan     		PDF BSN20 1997Jun smd transistor marking 2y m8p smd smd transistor 2y ti m8p smd transistor marking m8p TRANSISTOR SMD 2y smd transistor m8 sot23 marking code m8p transistor marking 2y marking M8p

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor BSN20 FOR MORE DETAILED INFORMATION SEE THE LATEST ISSUE OF HANDBOOK SC07 OR DATA SHEET FEATURES QUICK REFERENCE DATA • Direct interface to C-MOS, TTL, etc.


    OCR Scan     		PDF BSN20