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Part	Manufacturer	Description
PS7122AL-1A-A	Renesas Electronics Corporation	6, 8-Pin Dip, 250 V Break Down Voltage, , /
PS7160L-2A-A	Renesas Electronics Corporation	8-Pin Dip, 600 V Break Down Voltage, , /
PS7122AL-2A-E3-A	Renesas Electronics Corporation	6, 8-Pin Dip, 250 V Break Down Voltage, , /
PS7160L-2A-E3-A	Renesas Electronics Corporation	8-Pin Dip, 600 V Break Down Voltage, , /
PS7241-2A-A	Renesas Electronics Corporation	8-Pin Sop, 400V Break Down Voltage, , /

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Honeywell Sensing and Control ABP2-BREAKOUT-BRD BARE BREAKOUT BOARD FOR ABP2
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DigiKey	ABP2-BREAKOUT-BRD	Box	104		1	1 $36.22 10 $33.338 100 $30 1000 $30 10000 $30	Buy Now
Newark	ABP2-BREAKOUT-BRD	Bulk			21	1 $49.25 10 $49.25 100 $44.25 1000 $42.75 10000 $42.75	Buy Now
Master Electronics	ABP2-BREAKOUT-BRD					1 - 10 $43.75 100 $33.76 1000 $33.76 10000 $33.76	Buy Now
Newhaven Display International NHD-1.27-BREAKOUT EVAL BRD NHD-1.27-12896G SSD1357
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DigiKey	NHD-1.27-BREAKOUT	Tray	84		1	1 $12.5 10 $11 100 $9.875 1000 $9.558 10000 $9.558	Buy Now
Mouser Electronics	NHD-1.27-BREAKOUT		91			1 $12.5 10 $11 100 $9.73 1000 $9.73 10000 $9.73	Buy Now
RS	NHD-1.27-BREAKOUT	Bulk			100	1 - 10 - 100 $13.8 1000 $12.42 10000 $11.73	Get Quote
Master Electronics	NHD-1.27-BREAKOUT					1 - 10 $15.86 100 $11.57 1000 $9.41 10000 $9.41	Buy Now
Newhaven Display International NHD-1.45-BREAKOUT EVAL BD NHD-1.45-160128G SSD1357
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DigiKey	NHD-1.45-BREAKOUT	Tray	71		1	1 $12.5 10 $11 100 $9.875 1000 $9.558 10000 $9.558	Buy Now
RS	NHD-1.45-BREAKOUT	Bulk			100	1 - 10 - 100 $13.8 1000 $13.8 10000 $13.8	Get Quote
Master Electronics	NHD-1.45-BREAKOUT					1 - 10 $15.86 100 $11.57 1000 $9.41 10000 $9.41	Buy Now
Newhaven Display International NHD-1.5-BREAKOUT EVAL BRD NHD-1.5-128128G SSD1357
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DigiKey	NHD-1.5-BREAKOUT	Tray	57		1	1 $12.5 10 $11 100 $9.875 1000 $9.558 10000 $9.558	Buy Now
RS	NHD-1.5-BREAKOUT	Bulk			100	1 - 10 - 100 $13.8 1000 $13.8 10000 $13.8	Get Quote
Master Electronics	NHD-1.5-BREAKOUT					1 - 10 $15.86 100 $11.57 1000 $9.41 10000 $9.41	Buy Now
Innovative Sensor Technology IST Ag BREAKOUT-BOARD-BOB-0.4 BREAKOUT BOARD BOB 0.4 FOR IR EM
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DigiKey	BREAKOUT-BOARD-BOB-0.4	Box	28		1	1 $4.63 10 $4.63 100 $4.63 1000 $4.63 10000 $4.63	Buy Now

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BREAK Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
BREAK-1		B&B Electronics	Miscellaneous, Undefined Category, RS-232 DB25 BREAK OUT BOX		Original	PDF
BREAKOUT BOARD BMF055		Bosch Sensortec	Development Boards, Kits, Programmers - Evaluation Boards - Expansion Boards, Daughter Cards - BREAKOUT BOARD FOR BMF055		Original	PDF

BREAK Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
SL 2128 dip 8 Abstract: No abstract text available Text: TISP7Ö72F3, TISP7082F3 TRIPLE SYMMETRICAL TRANSIENT VOLTAGE SUPPRESSORS SLPSEI5 - MARCH I9M - REVISED SEPTEMBER ¡994 TELECOMMUNICATION SYSTEM SECONDARY PROTECTION • lon-lmplanted Breakdown Region Precise and Stable Voltage Low Voltage Overshoot under Surge	OCR Scan	TISP7082F3 7Q72F3 7082F3 SL 2128 dip 8	PDF
2N5551 Abstract: No abstract text available Text: TOSHIBA TRANSISTOR 2N5551 SILICON NPN EPITAXIAL TYPE PCT PROCESS FOR GENERAL PURPOSE USE HIGH VOLTAGE AMPLIFIER APPLICATIONS. . High Collector Breakdown Voltage : VCBO=180V, VcEO=160V . Low Leakage Current : IcBO= 50nA(Max.) @ VcB=120V . Low Saturation Voltage	OCR Scan	2N5551 100MHz 2N5551	PDF
2SJ201 Abstract: 2SJ20 Text: TOSHIBA FIELD EFFECT TRANSISTOR 2SJ201 SILICON P CHANNEL MOS TYPE HIGH POWER AMPLIFIER APPLICATION Unit in mm 03.3 ±0.2 20.5MAX : Vd s s ^-ZOOV MIN. 16.01 . High Breakdown Voltage . High Forward Transfer Admittance : \| Yfs \| -5.OS (TYP.) : « o -H o O (D	OCR Scan	2SJ201 2SK1530 Ta-25 2-21F1B -10mA, 2SJ201 2SJ20	PDF
ic 748 Abstract: 2SC4688 Text: SILICON NPN TRIPLE DIFFUSED TYPE 2SC4688 Unit in ram Weight: ELECTRICAL CHARACTERISTICS CHARACTERISTIC Ta=25°C SYMBOL Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage	OCR Scan	2SC4688 ic 748 2SC4688	PDF
2SC5242 Abstract: No abstract text available Text: 2SC5242 SILICON NPN TRIPLE DIFFUSED TYPE U nit in mm POWER AM PLIFIER APPLICATIONS. 15.9MAX. • • • — High Collector Breakdown Voltage : V c g o = 230V Min. Complementary to 2SA1962 Recommend for 80W High Fidelity Audio Frequency Amplifier Output Stage.	OCR Scan	2SC5242 2SA1962 2-16C1A 2SC5242	PDF
Untitled Abstract: No abstract text available Text: TISP4082 SYMMETRICAL TRANSIENT VOLTAGE SUPPRESSORS SLPSE36 - APRE. 1987 - REVISED SEPTEMBER 19M TELECOMMUNICATION SYSTEM SECONDARY PROTECTION • Ion-Implanted Breakdown Region Precise and Stable Voltage Low Voltage Overshoot under Surge 0 0 -2 2 0 PAC KAG E	OCR Scan	SLPSE36 TISP4082 PE-60	PDF
UM9151 Abstract: 1N4001X4 Text: UMC UM 9151-3 "BÊHÊnim nÊÊÊKÊÊHnHKÊÊtKÊBÊÊÊÊIÊiÊBÊÊÊm p u/s e dia ler H i Features • Direct telephone line operation ■ Redial with either * or # key ■ 4 x 3 matrix keyboard interface ■ Dialer reset for line power break > 200 msec	OCR Scan	22-digit 800ms UM9151-3 1N4001 UM9151-3 UM9151 1N4001X4	PDF
Untitled Abstract: No abstract text available Text: SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON POWER 2SD2449 PO W ER AM PLIFIER APPLICATIONS Unit in mm 2 0.SM A X . • High Breakdown Voltage : V q e o = 160V (Min.) • Complementary to 2SB1594 ¿ 3 .3 ± 0 .2 pr y > M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC	OCR Scan	2SD2449 2SB1594	PDF
Untitled Abstract: No abstract text available Text: UCC3916 y UNITRODE SCSI Termpower Manager FEATURES DESCRIPTION • Integrated Circuit Breaker Function The UCC3916 SCSI termpower manager provides complete power man agement, hot swap capability, and circuit breaker functions with minimal ex ternal components. For most applications, the only external component	OCR Scan	UCC3916 UCC3916	PDF
S1377 Abstract: No abstract text available Text: SILICON NPN TRIPLE DIFFUSED TYPE S1377 Unit in ram MEDIUM POWER AMPLIFIER APPLICATIONS. 9.9MAX. 0Z.2±aZ TV HORIZONTAL DRIVER APPLICATIONS. FEATURES: . High Collector to Emitter Breakdown Voltage -• Vcfi0=250V MAXIMUM RATINGS Ta =25°C CHARACTERISTIC SYMBOL	OCR Scan	S1377 100mA 200mA, S1377	PDF
Untitled Abstract: No abstract text available Text: GaAs IRED a PHOTO-TRANSISTOR TLP628,-2,-4 TLP628 Unit in mm PROGRAMMABLE CONTROLLERS. DC-OUTPUT MODULE. TELECOMMUNICATION. 4 The TOSHIBA TLP628, -2, and -4 consists of a gallium arsenide infreared emitting diode optically coupled to a phototransistor which has a 350V high voltage of collector-emitter breakdown	OCR Scan	TLP628 TLP628) TLP628, TLP628-4 5000Vrms UL1577, E67349 TLP628-4	PDF
74hc74ap Abstract: No abstract text available Text: 8 P R E C A U T I O N S IN H A N D L I N G 8 -1 E le ctric Static D is c h a r g e CMOS IC has a very thin gate insulation oxide film . When high voltage is applied to this gate electrode input of CMOS IC , the oxide film directly under the gate can sometimes breaks down. In	OCR Scan	TC74HCxxxA TC74HCxxx 74hc74ap	PDF
L04A Abstract: 2SK529 Text: 2SK529 FIELD EFFECT TRANSISTOR_ SILICON N CHANNEL MOS TYPE 7T-MOS INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS. SWITCHING REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS. 0s.e±ae FEATURES: . High Breakdown Voltage : V(gR)0gg=45OV	OCR Scan	2SK529 100nA T0-220 L04A 2SK529	PDF
transistor d 4515 Abstract: Transistor 4515 2-21F1C GT20D101 Text: TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR GT20D101 SILICON N CHANNEL TYPE HIGH POWER AMPLIFIER APPLICATION Unit in mm . High Breakdown Voltage ¿3.3 ¿0.2 20.5MAX : Vc e s =250V MIN. . High Forward Transfer Admittance : \| Yfe \| =10S (TYP.) . Complementary to GT20D201	OCR Scan	GT20D101 GT20D201 2-21F1C transistor d 4515 Transistor 4515 2-21F1C GT20D101	PDF

2N5401 Abstract: No abstract text available Text: i TOSHIBA TRANSISTOR 2N5401 SILICON PNP EPITAXIAL TYPE PCT PROCESS FOR GENERAL PURPOSE USE HIGH VOLTAGE AMPLIFIER APPLICATIONS. . High Collector Breakdown Voltage : VC b o =-160V, VCe o = -150V . Low Leakage Current : ICB0=5-50nA(Max. ) @ V c b = - 120V	OCR Scan	2N5401 -160V, 5-50nA -50mA, -10mA 100MHz 10Hz-15 2N5401	PDF
2SD525 Abstract: No abstract text available Text: SILICON NPN TRIPLE DIFFUSED TYPE 2SD525 Unit in nsn POWER AMPLIFIER APPLICATIONS. 0 3 .6 * 0.2 wÛ FEATURES: • High Breakdown Voltage : V q £q =100V • Low Collector Saturation Voltage : VcE sat = 2 .0V(Max.) • Complementary to 2SB595. • Recommended for 30W High Fidelity Audio	OCR Scan	2SD525 2SB595. 2SD525	PDF
2-16C1A Abstract: No abstract text available Text: SILICON PNP EPITAXIAL TYPE DARLINGTON POWER 5 5 8 U nit in mm POWER AMPLIFIER APPLICATIONS 15 9 V i A X • • )S3.2 ♦ 0.2 High Breakdown Voltage : V cE O = —140V (Min.) Complementary to 2SD2387 M A X IM U M RATINGS (Ta = 25°C) SYMBOL VCBO VCEO v EBO	OCR Scan	--140V 2SD2387 100fl -140V --50mA, --12A 2-16C1A	PDF
2SC2535 Abstract: 400V to 6V DC Regulator Text: SILICON NPN TRIPLE DIFFUSED TYPE 2SC2535 INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED HIGH VOLTAGE SW IT C H IN G APPLICATIONS. SW ITCHIN G REGULATOR APPLICATIONS. JO 3 MAX HIGH SPEED D C-DC CONVERTER APPLICATIONS. • Excellent Switching Time • High Collector Breakdown Voltage V C E O = 400V	OCR Scan	2SC2535 2SC2535 400V to 6V DC Regulator	PDF
LT 5265 Abstract: TISP7290 Text: TISP7180, TISP7290 DUAL SYMMETRICAL TRANSIENT VOLTAGE SUPPRESSOR D3063. DECEMBER 1987 FOR APPLICATIONS IN TELECOMMUNICATIONS EQUIPMENT • Breakover Voltage to Common TISP7180 . . . 180 V Max TISP7290 . . . 290 V Max • Reference Voltage TISP7180 . . . 145 V Min	OCR Scan	TISP7180, TISP7290 D3063. TISP7180 TISP7290 TISP7000 LT 5265	PDF
UFN140 Abstract: UFN143 kd 617 Text: POWER MOSFET TRANSISTORS “ ui 100 Volt, 0.085 Ohm N-Channel UFN142 ufni43 FEATURES • Fast Switching • Low Drive Current • Ease of Paralleling • No Second Breakdown • Excellent Temperature Stability DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available.	OCR Scan	UFN142 ufni43 UFN140 UFN141 UFN142 UFN143 Q2173 UFN140 UFN143 kd 617	PDF
2SB1016 Abstract: 1C13MAX Text: SILICON PNP TRIPLE DIFFUSED TYPE 2SB1016 POWER AMPLIFIER APPLICATIONS. Unit in mm 1C13MAX. 0z.2±az FEATURES: . High Breakdown Voltage : V -.gQ=-100V :i2 . Low Collector-Emitter Saturation Voltage : ^CE(sat =-2 .OV(Max.) . Complementary to 2SD1407 . Recommended for 30W High-Fidelity Audio Frequency	OCR Scan	2SB1016 1C13MAX. -100V 2SD1407 Q76-CU5 -50mA, 2SB1016 1C13MAX	PDF
T20D201 Abstract: gt20d201 Text: TOSHIBA GT20D201 Insulated Gate Bipolar Transistor U nit in m m Silicon P Channel MOS Type High Power Amplifier Application Features • High Breakdown Voltage - VCES = -250V Min • High Forward Transfer Admittance - Yfs' = 10S (Typ.) • Complementary to GT20D101	OCR Scan	GT20D201 -250V GT20D101 T20D201 T20D201 gt20d201	PDF
41315 Abstract: 30424 45560 Text: CLY2 Datasheet High-Power Packaged GaAs FET Description: Applications: The CLY2 is a high-breakdown voltage GaAs FET designed for PA driver applications in the 400 MHz to 3 GHz frequency range. It is ideal for portable PA applications in mobile phones and portable WLAN transceivers due to its	Original		PDF
Untitled Abstract: No abstract text available Text: TPS2330, TPS2331 SINGLE HOT SWAP POWER CONTROLLER WITH CIRCUIT BREAKER AND POWER-GOOD REPORTING SLVS277 – MARCH 2000 features D D D D D D D D D D D OR PW PACKAGE TOP VIEW Single-Channel High-Side MOSFET Driver Input Voltage: 3 V to 13 V Inrush Current Limiting With dv/dt Control	Original	TPS2330, TPS2331 SLVS277 14-Pin	PDF

BREAK Search Results

BREAK Result Highlights (5)

BREAK Price and Stock

Honeywell Sensing and Control ABP2-BREAKOUT-BRD

Newhaven Display International NHD-1.27-BREAKOUT

Newhaven Display International NHD-1.45-BREAKOUT

Newhaven Display International NHD-1.5-BREAKOUT

Innovative Sensor Technology IST Ag BREAKOUT-BOARD-BOB-0.4

BREAK Datasheets (2)

BREAK Datasheets Context Search

SL 2128 dip 8

2N5551

2SJ201

ic 748

2SC5242

Untitled

UM9151

Untitled

Untitled

S1377

Untitled

74hc74ap

L04A

transistor d 4515

2N5401

2SD525

2-16C1A

2SC2535

LT 5265

UFN140

2SB1016

T20D201

41315

Untitled