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    BQ4011Y Price and Stock

    Rochester Electronics LLC BQ4011YMA-150

    IC NVSRAM 256KBIT PARALLEL 28DIP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BQ4011YMA-150 Tube 3,003 16
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    Rochester Electronics LLC BQ4011YMA-70

    IC NVSRAM 256KBIT PARALLEL 28DIP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BQ4011YMA-70 Tube 1,262 16
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    Rochester Electronics LLC BQ4011YMA-150N

    IC NVSRAM 256KBIT PARALLEL 28DIP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BQ4011YMA-150N Tube 323 35
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    • 100 $8.73
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    Texas Instruments BQ4011YMA-70

    IC NVSRAM 256KBIT PARALLEL 28DIP
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    DigiKey BQ4011YMA-70 Tube
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    Rochester Electronics BQ4011YMA-70 1,262 1
    • 1 $19.96
    • 10 $19.96
    • 100 $18.77
    • 1000 $16.97
    • 10000 $16.97
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    Texas Instruments BQ4011YMA-70N

    IC NVSRAM 256KBIT PARALLEL 28DIP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BQ4011YMA-70N Tube
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    BQ4011Y Datasheets (51)

    Part ECAD Model Manufacturer Description Curated Type PDF
    bq4011Y Texas Instruments 32Kx8 Nonvolatile SRAM Original PDF
    BQ4011Y-100 Benchmarq nvSRAM Original PDF
    BQ4011Y-150 Benchmarq nvSRAM Original PDF
    BQ4011Y-200 Benchmarq nvSRAM Original PDF
    BQ4011Y-70 Benchmarq nvSRAM Original PDF
    BQ4011YMA-100 Texas Instruments BQ4011 - IC 32K X 8 NON-VOLATILE SRAM MODULE, 100 ns, PDMA28, ROHS COMPLIANT, PLASTIC, DIP-28, Static RAM Original PDF
    BQ4011YMA-100 Texas Instruments 32Kx8 Nonvolatile SRAM, 10% Voltage Tolerance 28-DIP MODULE 0 to 70 Original PDF
    bq4011YMA-100 Texas Instruments 32k x 8 Nonvolatile SRAM Original PDF
    BQ4011YMA-100 Texas Instruments 32Kx8 Nonvolatile SRAM Original PDF
    BQ4011YMA-100 Benchmarq 32Kx8 Nonvolatile SRAM Scan PDF
    BQ4011YMA-100N Texas Instruments BQ4011 - IC 32K X 8 NON-VOLATILE SRAM, 100 ns, DMA28, Static RAM Original PDF
    bq4011YMA-100N Texas Instruments NVRAM, NVSRAM, Parallel, 5V Supply Voltage, 28-DIP Module Original PDF
    bq4011YMA-100N Texas Instruments 32k x 8 Nonvolatile SRAM Original PDF
    BQ4011YMA-100N Texas Instruments 32Kx8 Nonvolatile SRAM Original PDF
    BQ4011YMA-100N Benchmarq 32Kx8 Nonvolatile SRAM Scan PDF
    BQ4011YMA-120 Texas Instruments 128K x 8 Nonvolatile SRAM Original PDF
    BQ4011YMA-120N Texas Instruments 128K x 8 Nonvolatile SRAM Original PDF
    BQ4011YMA-150 Texas Instruments BQ4011 - IC 32K X 8 NON-VOLATILE SRAM MODULE, 150 ns, PDMA28, ROHS COMPLIANT, PLASTIC, DIP-28, Static RAM Original PDF
    bq4011YMA-150 Texas Instruments 32k x 8 Nonvolatile SRAM Original PDF
    BQ4011YMA-150 Texas Instruments 32Kx8 Nonvolatile SRAM Original PDF

    BQ4011Y Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: bq4011/bq4011Y 32Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4011 is a nonvolatile 262,144-bit static RAM organized as 32,768 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility


    Original     		PDF bq4011/bq4011Y 32Kx8 28-pin 10-year bq4011 144-bit

    Untitled

    Abstract: No abstract text available
    Text: bq4011/bq4011Y 32Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4011 is a nonvolatile 262,144-bit static RAM organized as 32,768 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility


    Original     		PDF bq4011/bq4011Y 32Kx8 28-pin 10-year bq4011 144-bit

    bq4011

    Abstract: BQ4011MA-100 bq4011Y bq4011YMA-150N bq4011YMA-70N benchmarq BQ4011YMA-70
    Text: bq4011/bq4011Y 32Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4011 is a nonvolatile 262,144-bit static RAM organized as 32,768 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility


    Original     		PDF bq4011/bq4011Y 32Kx8 bq4011 144-bit 28-pin BQ4011MA-100 bq4011Y bq4011YMA-150N bq4011YMA-70N benchmarq BQ4011YMA-70

    benchmarq BQ4011YMA-70

    Abstract: bq4011 BQ4011MA-100 bq4011Y bq4011YMA-150N bq4011YMA-70N
    Text: bq4011/bq4011Y 32Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4011 is a nonvolatile 262,144-bit static RAM organized as 32,768 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility


    Original     		PDF bq4011/bq4011Y 32Kx8 bq4011 144-bit 28-pin benchmarq BQ4011YMA-70 BQ4011MA-100 bq4011Y bq4011YMA-150N bq4011YMA-70N

    benchmarq BQ4011YMA-70

    Abstract: Benchmarq BQ4011MA-150
    Text: bq4011/bq4011Y 32Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4011 is a nonvolatile 262,144-bit static RAM organized as 32,768 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility


    Original     		PDF bq4011/bq4011Y 32Kx8 28-pin 10-year bq4011 144-bit benchmarq BQ4011YMA-70 Benchmarq BQ4011MA-150

    32kx8 bit low power cmos sram

    Abstract: bq4011 bq4011Y
    Text: bq4011/bq4011Y 32Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4011 is a nonvolatile 262,144-bit static RAM organized as 32,768 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility


    Original     		PDF bq4011/bq4011Y 32Kx8 bq4011 144-bit 28-pin 10-year bq4011Y-70 bq4011Y 32kx8 bit low power cmos sram

    bq4011

    Abstract: bq4011Y bq4011YMA-150N bq4011YMA-70N BENCHMARQ MICROELECTRONICS
    Text: bq4011/bq4011Y 32Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4011 is a nonvolatile 262,144-bit static RAM organized as 32,768 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility


    Original     		PDF bq4011/bq4011Y 32Kx8 bq4011 144-bit 28-pin bq4011Y bq4011YMA-150N bq4011YMA-70N BENCHMARQ MICROELECTRONICS

    bq4011

    Abstract: bq4011Y bq4011YMA-150N bq4011YMA-70N
    Text: bq4011/bq4011Y 32Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4011 is a nonvolatile 262,144-bit static RAM organized as 32,768 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility


    Original     		PDF bq4011/bq4011Y 32Kx8 bq4011 144-bit 28-pin bq4011Y bq4011YMA-150N bq4011YMA-70N

    Untitled

    Abstract: No abstract text available
    Text: BQ4011YMA-100 IL08D 24K 32768 x 8 -BIT NONVOLATILE SRAM —TOP VIEW— 10 A14 1 28 VDD A12 2 27 WE 9 8 7 6 A7 3 26 A13 5 4 A6 4 25 A8 3 25 A5 5 24 A9 24 21 A4 6 23 A11 23 2 A3 7 22 OE 26 1 A2 8 21 A10 A1 9 20 CE A0 I/O 0 A1 I/O 1 A2 I/O 2 A3 I/O 3 A4 I/O 4


    Original     		PDF BQ4011YMA-100 IL08D

    benchmarq BQ4011YMA-70

    Abstract: BQ4011MA-150 bq4011 BQ4011MA-100 bq4011Y bq4011YMA-150N bq4011YMA-70N
    Text: bq4011/bq4011Y 32Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4011 is a nonvolatile 262,144-bit static RAM organized as 32,768 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility


    Original     		PDF bq4011/bq4011Y 32Kx8 bq4011 144-bit 28-pin benchmarq BQ4011YMA-70 BQ4011MA-150 BQ4011MA-100 bq4011Y bq4011YMA-150N bq4011YMA-70N

    bq4011

    Abstract: bq4011MA bq4011Y bq4011YMA MA-150
    Text: bq4011/bq4011Y 32Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4011 is a nonvolatile 262,144-bit static RAM organized as 32,768 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility


    Original     		PDF bq4011/bq4011Y 32Kx8 bq4011 144-bit 28-pin bq4011 bq4011MA bq4011Y bq4011YMA MA-150

    TMS44C256

    Abstract: HY6116 CROSS REFERENCE sram mcm6264 ZMD cross reference SIMTEK cross reference HM50464 soj28 sop28 HM65664A HM6116 oki cross
    Text: ZMD Cross Reference List Density Organization Store Type 4Kbit 512 x 8 HardStore 16Kbit 2K x 8 CapStore PowerStore HardStore SoftStore PowerStore PowerStore 64Kbit 8K x 8 CapStore HardStore SoftStore PowerStore PowerStore 256Kbit 32K x 8 CapStore SoftStore


    Original     		PDF 16Kbit 64Kbit 256Kbit 600mil) 300mil) TMS44C256 HY6116 CROSS REFERENCE sram mcm6264 ZMD cross reference SIMTEK cross reference HM50464 soj28 sop28 HM65664A HM6116 oki cross

    ST L1117

    Abstract: ST MICROELECTRONICS L1117 33 LM7905 TO-92 ENE CP2211 CP2211 TL496 equivalent cp2206 MC34153 L7805 SOT 89 transistor L7905
    Text: Technology for Innovators TM Standard Linear Products Cross-Reference Including Amplifiers, Comparators, Timers, Peripheral Drivers, Power Management Controllers, References, Regulators, Supervisors, Shunts, Transmitters and Receivers INTERFACE COMPARATORS


    Original     		PDF A011905 ST L1117 ST MICROELECTRONICS L1117 33 LM7905 TO-92 ENE CP2211 CP2211 TL496 equivalent cp2206 MC34153 L7805 SOT 89 transistor L7905

    Untitled

    Abstract: No abstract text available
    Text: Not Recommended For New Designs bq4011/Y/LY www.ti.com SLUS118A – MAY 1999 – REVISED MAY 2007 32 k x 8 NONVOLATILE SRAM 5 V, 3.3 V FEATURES • • • • • • GENERAL DESCRIPTION Data Retention for at least 10 Years Without Power Automatic Write-Protection During


    Original     		PDF bq4011/Y/LY SLUS118A 28-Pin 144-bit

    winbond 25080

    Abstract: 29F200BB 16LF648A 89V51RD2 18f252 89S51 National SEMICONDUCTOR GAL16V8 29sf040 12f675 29F400BB
    Text: Dataman-S4 Version 3.00 <ALL> Devices List - 1. S4 8 bit EPROM lib. V3.00 - AMD 27010


    Original     		PDF 2732B 27C100 27HB010 27C256 27HC64 27C128 27C040 7128A winbond 25080 29F200BB 16LF648A 89V51RD2 18f252 89S51 National SEMICONDUCTOR GAL16V8 29sf040 12f675 29F400BB

    bq4011

    Abstract: bq4011MA-150 bq4011MA-200 bq4011MA-70 bq4011Y bq4011YMA-70 BQ4011YMA-100
    Text: bq4011/Y/LY www.ti.com SLUS118A – MAY 1999 – REVISED MAY 2007 32 k x 8 NONVOLATILE SRAM 5 V, 3.3 V FEATURES • • • • • • GENERAL DESCRIPTION Data Retention for at least 10 Years Without Power Automatic Write-Protection During Power-up/Power-down Cycles


    Original     		PDF bq4011/Y/LY SLUS118A 28-Pin 144-bit bq4011 bq4011MA-150 bq4011MA-200 bq4011MA-70 bq4011Y bq4011YMA-70 BQ4011YMA-100

    Untitled

    Abstract: No abstract text available
    Text: bq4011/bq4011Y BENCHMARQ 32Kx8 Nonvolatile SRAM Features General Description >• Data retention in the absence of power The CMOS bq4011 is a nonvolatile 262,144-bit static RAM organized as 32,768 words by 8 bits. The integral control circuitry and lithium energy


    OCR Scan     		PDF bq4011/bq4011Y 32Kx8 bq4011 144-bit 28-pin 10-year bq4011YMA-150N bq4011

    Z7777

    Abstract: No abstract text available
    Text: bq4011/bq4011Y UNITRODE- 32Kx8 Nonvolatile SRAM Features General Description >• Data retention in the absence of power The CMOS bq4011 is a nonvolatile 262,144-bit static RAM organized as 32,768 words by 8 bits. The integral control circuitry and lithium energy


    OCR Scan     		PDF 28-pin 10-year bq4011/bq4011Y 32Kx8 bq4011 144-bit bq4011YMA-150N bq4011Y-70 bq4011YMA-70N Z7777

    Untitled

    Abstract: No abstract text available
    Text: bq4011/bq4011Y BENCHMARQ 32Kx8 Nonvolatile SRAM Features General Description >- Data retention in the absence of power The CMOS bq4011 is a nonvolatile 262,144-bit static RAM organized as 32,768 words by 8 bits. The integral control circuitry and lithium energy


    OCR Scan     		PDF bq4011/bq4011Y 32Kx8 bq4011 144-bit bq4011-70 bq4011Y-70 bq4011YMA-70N bq4011

    Untitled

    Abstract: No abstract text available
    Text: bq4011/bq4011Y BENCHMARQ 32Kx8 Nonvolatile SRAM Features General Description >• Data retention in the absence of power The CMOS bq4011 is a nonvolatile 262,144-bit static RAM organized as 32,768 wards by 8 bits. The integral control circuitry and lithium energy


    OCR Scan     		PDF bq4011/bq4011Y 32Kx8 bq4011 144-bit bq4011YMA-150N bq4011-70 andbq4011Y-70 bq4011YMA-70N

    Untitled

    Abstract: No abstract text available
    Text: |"v BENCHMARQ_ bq4011/bq4011Y 32Kx8 Nonvolatile SRAM Features General Description ► D ata retention in th e absence of power The CMOS bq4011 is a nonvolatile 262,144-bit static RAM organized as 32,768 w ords by 8 bits. The in teg ral control circuitry and lith iu m energy


    OCR Scan     		PDF bq4011/bq4011Y 32Kx8 28-pin 10-year bq4011 144-bit bq4011YMA-70N bq4011

    Untitled

    Abstract: No abstract text available
    Text: bq4011/bq4011Y BENCHMARQ 32Kx8 Nonvolatile SRAM Features General Description >• Data retention in the absence of power The CMOS bq4011 is a nonvolatile 262,144-bit static RAM organized as 32,768 words by 8 bits. The integral control circuitry and lithium energy


    OCR Scan     		PDF bq4011/bq4011Y 32Kx8 bq4011 144-bit 28-pin 10-year bq4011YMA-150N bq4011

    Untitled

    Abstract: No abstract text available
    Text: h bq4010/bq4010Y BENCHMARQ 8Kx8 Nonvolatile SRAM Features General Description ► Data retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy


    OCR Scan     		PDF bq4010/bq4010Y bq4010 536-bit 28-pin 10-year bq4010YMA-85N -150N. bq4010

    ELAP CM 72

    Abstract: ELAP cm 76 fm transmitter 2KM documentation DDU-66F-XXX ELAP CM 140 hp laptop battery pack pinout semi catalog EB 203 D maxim evaluation kit touch dimmer TC 306 S
    Text: Data B ook C o n t e n t s •S h o r t • F irst • S a l e s -Fo -Pa O rm g e C atalog Data S h e e t s ffic es CD •C ROM C o n ten ts: o m p l e t e Data S an d A pplication fo r A l l • U s e r 's G P h e e t s n o t e s r o d u c ts uides p. -••x;. < ~x3xxr r -> ~' ' fP 5 > g? 3


    OCR Scan     		PDF